Ryo Nakamura
Ryo Nakamura, Kawasaki-Shi JP
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20100322650 | IMAGE FORMING APPARATUS - An image forming apparatus includes an image bearing member; a charging device, including a rotatable magnetic particle carrying member and electroconductive magnetic particles carried on the rotatable magnetic particle carrying member, for charging the image bearing member by contacting the magnetic particles to the image bearing member; the measuring device for measuring magnitudes of a first force in a first direction and a second force in a second direction which are produced in a contact region between the image bearing member and the magnetic particle, wherein the first direction and second direction are independent from each other; and a control device for controlling an image forming operation on the basis of the forces measured by the measuring device. | 12-23-2010 |
Ryo Nakamura, Aichi-Ken JP
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20100206218 | Method of making group III nitride-based compound semiconductor - A method of making a group III nitride-based compound semiconductor includes providing a semiconductor substrate comprising group III nitride-based compound semiconductor, polishing a surface of said semiconductor substrate such that said polished surface includes an inclined surface that has an off-angle θ of 0.15 degrees or more and 0.6 degrees or less to one of an a-face, a c-face and an m-face of the semiconductor substrate, providing a stripe-shaped specific region on the polished surface, the specific region comprising a material that prevents the growth of the group III nitride-based compound semiconductor on its surface, and growing a semiconductor epitaxial growth layer of group III nitride-based compound semiconductor on the polished surface of the semiconductor substrate. The specific region is provided on the polished surface such that the longitudinal direction of the specific region intersects with the longitudinal direction of a step portion that is formed with an atom-layer height on the polished surface by introducing the off-angle θ. | 08-19-2010 |
Ryo Nakamura, Minami-Ashigara-Shi JP
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20090244454 | LIQUID-CRYSTAL DISPLAY DEVICE - Disclosed is a liquid-crystal display device comprising a liquid-crystal cell that comprises a pair of substrates each having an electrode layer on the facing surface thereof, and a liquid-crystal layer of a liquid-crystal material disposed between the pair of substrates, a driving circuit to impart a driving voltage to the electrode layer, a pair of polarizing elements disposed to sandwich the liquid-crystal cell therebetween, and an optically-anisotropic layer disposed between at least one (first polarizing element) of the pair of polarizing elements and the liquid-crystal cell; wherein retardation in plane at a wavelength of 450 nm, Re(450), of the optically-anisotropic layer, and retardation in plane at a wavelength of 650 nm, Re(650), thereof satisfy the condition, Re(450)/Re(650)<1.25; and a voltage is applied to the electrode layers by the driving circuit, so that the ratio of retardation Re | 10-01-2009 |
20100014029 | POLARIZING PLATE AND LIQUID CRYSTAL DISPLAY DEVICE USING THE SAME - The invention relates to a polarizing plate comprising at least a polarizing layer having a K value as defined by the following expression of from 0.25 to 0.75; | 01-21-2010 |
20120329974 | POLYMER FILM, PHASE DIFFERENCE FILM, POLARIZING PLATE, LIQUID CRYSTAL DISPLAY DEVICE, RETARDATION INDUCING AGENT, AND MEROCYANINE-BASED COMPOUND - Disclosed is a polymer film excellent in performance of inducing Rth. The polymer film comprises at least one species of a compound represented by the formula (I) and a compound represented by the formula (I′): | 12-27-2012 |
Ryo Nakamura, Aichi JP
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20090249800 | LOW-TEMPERATURE-SLUSH-FLUID PRODUCING APPARATUS - A low-temperature-slush-fluid producing apparatus capable of achieving an increased weight solidification rate of slush fluid is provided. A low-temperature-slush-fluid producing apparatus includes a slush-fluid producing unit that includes a heat exchanger having a heat-transfer surface and disposed in a liquid-phase low-temperature fluid L stored in a container and scraping means for scraping a solid-phase low-temperature fluid formed on a surface of the heat-transfer surface; and a cryogenic-fluid generating unit for supplying into the interior of the heat-transfer surface a cryogenic fluid having a lower temperature than the liquid-phase low-temperature fluid L stored in the container. The low-temperature-slush-fluid producing apparatus is configured so that the flow rate and temperature of the cryogenic fluid flowing into the interior of the heat-transfer surface and the rotational speed or reciprocating speed of the scraping means can be adjusted based on the particle size of the solid-phase low-temperature fluid scraped by the scraping means. | 10-08-2009 |
Ryo Nakamura, Anjo-Shi JP
Ryo Nakamura, Yokohama JP
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20090175276 | Packet forwarding apparatus with function of limiting the number of user terminals to be connected to ISP - A packet forwarding apparatus for connecting a plurality of user terminals to an ISP management server has a management table indicating the relationship between a connection port identifier and specific header information in association with the MAC address of each of the user terminals so that, in a communication protocol procedure executed between each of the user terminals and the ISP management server prior to communication with a wide-area network, the packet forwarding apparatus discards a packet for the user terminal when it is determined that the specific header information cannot be assigned to the user terminal based on the management table. | 07-09-2009 |
Ryo Nakamura, Mishima-Shi JP
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20090162100 | IMAGE FORMING APPARATUS - An image forming apparatus includes an image bearing member and a charging device configured to charge the image bearing member. The charging device includes a magnetic particle carrier and a magnetic particle regulating member configured to regulate magnetic particles carried by the magnetic particle carrier. The charging device causes the magnetic particles carried by the magnetic particle carrier to contact the image bearing member, and applies a voltage to the magnetic particle carrier to charge the image bearing member. An electrode has a contact area via which the electrode can contact magnetic particles stored in a particle pool defined by the magnetic particle carrier and the magnetic particle regulating member. The contact area is variable according to an amount of the magnetic particles stored in the particle pool. A current detection device detects a value of current flowing from the magnetic particle carrier to the electrode via the magnetic particles. | 06-25-2009 |
Ryo Nakamura, Kanagawa JP
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20090079910 | OPTICAL COMPENSATION FILM, POLARIZING PLATE AND LIQUID CRYSTAL DISPLAY - An optical compensation film is provided and has a cellulose acylate film coated with an optically anisotropic layer containing a liquid crystalline compound, cellulose having a glucose unit, a hydroxyl group of the glucose unit being substituted with an acyl group having at least two carbon atoms. The cellulose acylate film satisfies relationships specified in the specification. | 03-26-2009 |
20110311738 | Process of producing cellulose acylate film, cellulose acylate film, polarizing plate liquid crystal display device and optical compensation film - A process of producing a cellulose acylate film is disclosed. The process comprises a forming step of forming a web of a fluid, comprising a cellulose acylate, aromatic group-containing oligomer and solvent, by casting the fluid onto a support, a stretching step of stretching the web, thereby to align molecules of the aromatic group-containing oligomer along the stretching direction, and a heat-treatment step of subjecting the stretched web to a heat treatment, thereby to at least increase the alignment degree of molecules of the aromatic group-containing oligomer. | 12-22-2011 |
20120140161 | POLYMER FILM, RETARDATION FILM, POLARIZING PLATE, LIQUID CRYSTAL DISPLAY DEVICE AND ULTRAVIOLET ABSORBER - A polymer film, containing a merocyanine compound having λ | 06-07-2012 |
20120251781 | LAMINATE FILM, OPTICALLY COMPENSATORY FILM, POLARIZING PLATE, AND LIQUID CRYSTAL DISPLAY DEVICE - Disclosed is a laminate film comprising an inner layer formed of a composition comprising a polymer material as a main component and an outer layer formed of a composition comprising a polymer material as a main component and laminated on at least one surface of the inner layer, wherein a film thickness of the outer layer differs depending upon a position in the width direction of the laminate film. | 10-04-2012 |
20140092349 | TN-MODE LIQUID CRYSTAL DISPLAY DEVICE - A TN-mode liquid crystal display device, which exhibits reduced grayscale inversion and improved white luminance, including: in sequence, a first polarizer, a first retardation film, a first liquid crystal cell substrate, a TN-mode liquid crystal layer, a second liquid crystal cell substrate, a second retardation film, and a second polarizer, wherein the absorption axis of the first polarizer is orthogonal to the absorption axis of the second polarizer, the slow axis of the first retardation film tilts by about 45° from the absorption axis of the first polarizer, the slow axis of the second retardation film tilts by about 135° from the absorption axis of the second polarizer, the slow axis of the first retardation film is orthogonal to the slow axis of the second retardation film, the first retardation film and the second retardation film have the same Re(550), and the first retardation film has a Re(550) of 5≦Re(550)≦55. | 04-03-2014 |
Ryo Nakamura, Kiyosu-Shi JP
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20120205618 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREFOR - The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved emission performance and high electrostatic breakdown voltage. The Group III nitride semiconductor light-emitting device has a layered structure in which an n-type contact layer, an ESD layer, an n-type cladding layer, a light-emitting layer, a p-type cladding layer, and a p-type contact layer are deposited on a sapphire substrate. The ESD layer has a pit. The n-type cladding layer and the light-emitting layer are formed without burying the pit. The pit has a diameter of 110 nm to 150 nm at an interface between the n-type cladding layer and the light-emitting layer. The barrier layer of the light-emitting layer is formed of AlGaN having an Al composition ratio of 3% to 7%. | 08-16-2012 |
20120326205 | METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - An MQW-structure light-emitting layer is formed by alternately stacking InGaN well layers and AlGaN barrier layers. Each well layer and each barrier layer are formed so as to satisfy the following relations: 12.9≦−2.8x+100y≦37 and 0.65≦y≦0.86, or to satisfy the following relations: 162.9≦7.1x+10z≦216.1 and 3.1≦z≦9.2, here x represents the Al compositional ratio (mol %) of the barrier layer, and y represents the difference in bandgap energy (eV) between the barrier layer and the well layer, and z represents the In compositional ratio (mol %) of the well layer. | 12-27-2012 |
20140154828 | METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - The present invention provides a method for producing a Group III nitride semiconductor light-emitting device wherein in the formation of a light-emitting layer by forming a well layer, a capping layer and a barrier layer, the well layer having superior flatness and crystallinity is formed while suppressing the occurrence of damage to the well layer. In formation of the light-emitting layer, pits are provided in the light-emitting layer so that a pit diameter D falls within a range of 120 nm to 250 nm. The light-emitting layer formation step comprises the steps of forming the barrier layer, forming the well layer, and forming the capping layer. The growth temperature of the barrier layer is higher by any temperature in a range of 65° C. to 135° C. than that of the well layer. | 06-05-2014 |
20150083993 | Group III Nitride Semiconductor Light-Emitting Device - The present invention provides a Group III nitride semiconductor light-emitting device having a flat semiconductor layer, in which the stress applied to the light-emitting layer is relaxed. The light-emitting layer of the light-emitting device includes a well layer and a barrier layer comprising an AlGaN layer containing In. The light-emitting device has a pit extending from an n-type semiconductor layer to layers above the light-emitting layer. A pit diameter at an interface between the light-emitting layer and the n-type semiconductor layer is 120 nm to 200 nm. The barrier layer has an In concentration of 6.0×10 | 03-26-2015 |
Ryo Nakamura, Chiyoda-Ku JP
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20120235610 | ELECTRIC MOTOR CONTROL APPARATUS - An electric motor control apparatus capable of controlling a motor normally regardless of failures is obtained without increased cost. The apparatus includes a position sensor failure determination unit which outputs a failure determination signal, and generates a first phase; a motor rotation speed calculator which operates based on the failure determination signal and position sensor signals; a phase command generator producing a phase command based on the first phase, the failure determination signal and rotation speed; an amplitude command generator that generates an amplitude command indicating magnitude of a driving signal for the motor, and an electrical energization unit that applies the driving signal to the motor based on the phase command and the amplitude command. Upon failure of a position sensor, the phase command generator generates the phase command using the first phase, and a second phase obtained based on the first phase and the rotation speed. | 09-20-2012 |
20140306629 | MOTOR DRIVE CONTROL SYSTEM - Included are: a voltage command generation unit which generates a voltage command amplitude and a voltage command phase based on a current command value; a phase generation unit during rectangular wave energization, which generates a voltage command phase during rectangular wave energization; and a control switching determination unit which switches by determining as to which control of PWM energization or rectangular wave energization will be performed depending on the amount of the condition of a motor. A switching device unit is driven by the output from a PWM energization unit when switched to the PWM energization; and the switching device unit is driven by the output from a rectangular wave energization unit when switched to the rectangular wave energization. The voltage command generation unit calculates the voltage command amplitude and the voltage command phase by using parameters of the motor. | 10-16-2014 |
Ryo Nakamura, Tokyo JP
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20120299291 | FLUID JOINT - Provided is a fluid joint having a first coupler that includes a cylindrical first main body and an outer cylinder located at the outer circumferential side of the first main body, which protrudes to a distal end of the first main body, and is provided with a first engagement portion and a second engagement portion at the distal end, wherein the second coupler includes a second main body provided with a third engagement portion that can engage with the first engagement portion and a fourth engagement portion that can engage with the second engagement portion; and wherein the phases of the first engagement portion and the third engagement portion match in the process of engagement thereof, so that the second engagement portion and the fourth engagement portion engage with each other to join the outer cylinder and the second main body together. | 11-29-2012 |
Ryo Nakamura, Kiosu-Shi JP
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20130146839 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A Group III nitride semiconductor light-emitting device includes a sapphire substrate; and an n contact layer, an n cladding layer, a light-emitting layer, a p cladding layer, and a p contact layer, each of the layers being formed of Group III nitride semiconductor, are sequentially deposited on the sapphire substrate. The n cladding layer includes two layers of a high impurity concentration layer and a low impurity concentration layer in this order on the n contact layer, and the low impurity concentration layer is in contact with the light-emitting layer. The low impurity concentration layer is a layer having a lower n-type impurity concentration than that of the high impurity concentration layer, which has an n-type impurity concentration of 1/1000 to 1/100 of the p-type impurity concentration of the p cladding layer and a thickness of 10 Å to 400 Å. | 06-13-2013 |