Patent application number | Description | Published |
20110195021 | CD20 ANTIBODIES AND USES THEREOF - CD20 is a transmembrane protein of the tetra-spanin family expressed on the surface of B-cells and has been found on B-cells from peripheral blood as well as lymphoid tissues. CD20 expression persists from the early pre-B cell stage until the plasma cell differentiation stage. Conversely, it is not found on hematopoietic stem cells, pro-B cells, differentiated plasma cells or non-lymphoid tissues. In addition to expression in normal B-cells, CD20 is expressed in B-cell derived malignancies such as non-Hodgkin's lymphoma (NHL) and B-cell chronic lymphocytic leukemia (CLL). CD20 expressing cells are known to play a role in other diseases and disorders, including inflammation. The present invention includes anti-CD20 antibodies, forms and fragments, having superior physical and functional properties; immunoconjugates, compositions, diagnostic reagents, methods for inhibiting growth, therapeutic methods, improved antibodies and cell lines; and polynucleotides, vectors and genetic constructs encoding same. | 08-11-2011 |
20110256153 | CD37-Binding Molecules and Immunoconjugates Thereof - Novel anti-cancer agents, including, but not limited to, antibodies and immunoconjugates, that bind to CD37 are provided. Methods of using the agents, antibodies, or immunoconjugates, such as methods of inhibiting tumor growth are further provided. | 10-20-2011 |
20120009181 | Folate Receptor 1 Antibodies and Immunoconjugates and Uses Thereof - Novel anti-cancer agents, including, but not limited to, antibodies and immunoconjugates, that bind to human folate receptor 1 are provided. Methods of using the agents, antibodies, or immunoconjugates, such as methods of inhibiting tumor growth are further provided. | 01-12-2012 |
20120156217 | Novel EGFR-Binding Molecules and Immunoconjugates Thereof - Novel anti-cancer agents, including, but not limited to, antibodies and immunoconjugates, that bind to EGFR are provided. Methods of using the agents, antibodies, or immunoconjugates, such as methods of inhibiting tumor growth are further provided. | 06-21-2012 |
20130295104 | CD37-Binding Molecules and Immunoconjugates Thereof - Novel anti-cancer agents, including, but not limited to, antibodies and immunoconjugates, that bind to CD37 are provided. Methods of using the agents, antibodies, or immunoconjugates, such as methods of inhibiting tumor growth are further provided. | 11-07-2013 |
20130295119 | Folate Receptor 1 Antibodies and Immunoconjugates and Uses Thereof - Novel anti-cancer agents, including, but not limited to, antibodies and immunoconjugates, that bind to human folate receptor 1 are provided. Methods of using the agents, antibodies, or immunoconjugates, such as methods of inhibiting tumor growth are further provided. | 11-07-2013 |
20140023662 | NON-ANTAGONISTIC EGFR-BINDING MOLECULES AND IMMUNOCONJUGATES THEREOF - Novel anti-cancer agents, including, but not limited to, antibodies and immunoconjugates, that bind to EGFR are provided. Methods of using the agents, antibodies, or immunoconjugates, such as methods of inhibiting tumor growth are further provided. | 01-23-2014 |
20140099308 | Novel EGFR-Binding Molecules and Immunoconjugates Thereof - Novel anti-cancer agents, including, but not limited to, antibodies and immunoconjugates, that bind to EGFR are provided. Methods of using the agents, antibodies, or immunoconjugates, such as methods of inhibiting tumor growth are further provided. | 04-10-2014 |
Patent application number | Description | Published |
20100330772 | METHODS FOR DEPOSITING HIGH-K DIELECTRICS - Methods for depositing high-K dielectrics are described, including depositing a first electrode on a substrate, wherein the first electrode is chosen from the group consisting of platinum and ruthenium, applying an oxygen plasma treatment to the exposed metal to reduce the contact angle of a surface of the metal, and depositing a titanium oxide layer on the exposed metal using at least one of a chemical vapor deposition process and an atomic layer deposition process, wherein the titanium oxide layer comprises at least a portion rutile titanium oxide. | 12-30-2010 |
20110027617 | Methods of Forming Strontium Titanate Films - Embodiments of the current invention include methods of forming a strontium titanate (SrTiO | 02-03-2011 |
20110027960 | Methods of Forming Strontium Titanate Films - Embodiments of the current invention include methods of forming a strontium titanate (SrTiO | 02-03-2011 |
20110151136 | METHODS FOR DEPOSITING HIGH-K DIELECTRICS - Methods for depositing high-K dielectrics are described, including depositing a first electrode on a substrate, wherein the first electrode is chosen from the group consisting of platinum and ruthenium, applying an oxygen plasma treatment to the exposed metal to reduce the contact angle of a surface of the metal, and depositing a titanium oxide layer on the exposed metal using at least one of a chemical vapor deposition process and an atomic layer deposition process, wherein the titanium oxide layer comprises at least a portion rutile titanium oxide. | 06-23-2011 |
20110204475 | ENHANCED WORK FUNCTION LAYER SUPPORTING GROWTH OF RUTILE PHASE TITANIUM OXIDE - This disclosure provides a method of fabricating a semiconductor stack and associated device, such as a capacitor and DRAM cell. In particular, a bottom electrode has a material selected for lattice matching characteristics. This material may be created from a relatively inexpensive metal oxide which is processed to adopt a conductive, but difficult-to-produce oxide state, with specific crystalline form; to provide one example, specific materials are disclosed that are compatible with the growth of rutile phase titanium dioxide (TiO | 08-25-2011 |
20120156854 | METHOD OF FORMING STACKED METAL OXIDE LAYERS - This disclosure provides a method of fabricating a semiconductor stack and associated device, such as a capacitor or DRAM cell. In such a device, a high-K zirconia-based layer may be used as the primary dielectric together with a relatively inexpensive metal electrode based on titanium nitride. To prevent corruption of the electrode during device formation, a thin barrier layer can be used seal the electrode prior to the use of a high temperature process and a (high-concentration or dosage) ozone reagent (i.e., to create a high-K zirconia-based layer). In some embodiments, the barrier layer can also be zirconia-based, for example, a thin layer of doped or un-doped amorphous zirconia. Fabrication of a device in this manner facilitates formation of a device with dielectric constant of greater than 40 based on zirconia and titanium nitride, and generally helps produce less costly, increasingly dense DRAM cells and other semiconductor structures. | 06-21-2012 |
20120235276 | ELECTRODE TREATMENTS FOR ENHANCED DRAM PERFORMANCE - A method for fabricating a dynamic random access memory capacitor is disclosed. The method may comprise depositing a first titanium nitride (TiN) electrode; creating a first layer of titanium dioxide (TiO | 09-20-2012 |
Patent application number | Description | Published |
20120156889 | METHODS FOR FORMING HIGH-K CRYSTALLINE FILMS AND RELATED DEVICES - This disclosure provides a method of fabricating a semiconductor stack and associated device, such as a capacitor or DRAM cell. In such a device, a high-K zirconia-based layer may be used as the primary dielectric together with a relatively inexpensive metal electrode based on titanium nitride. To prevent corruption of the electrode during device formation, a thin barrier layer can be used seal the electrode prior to the use of a high temperature process and a (high-concentration or dosage) ozone reagent (i.e., to create a high-K zirconia-based layer). In some embodiments, the barrier layer can also be zirconia-based, for example, a thin layer of doped or un-doped amorphous zirconia. Fabrication of a device in this manner facilitates formation of a device with dielectric constant of greater than 40 based on zirconia and titanium nitride, and generally helps produce less costly, increasingly dense DRAM cells and other semiconductor structures. | 06-21-2012 |
20120309162 | METHOD FOR ALD DEPOSITION RATE ENHANCEMENT - A method for fabricating a dynamic random access memory (DRAM) capacitor includes forming a first electrode layer, forming a catalytic layer on the first electrode layer, optionally annealing the catalytic layer, forming a dielectric layer on the catalytic layer, optionally annealing the dielectric layer, forming a second electrode layer on the dielectric layer, and optionally annealing the capacitor stack. Advantageously, the electrode layers are TiN, the catalytic layer is MoO | 12-06-2012 |
20120322220 | METHOD OF PROCESSING MIM CAPACITORS TO REDUCE LEAKAGE CURRENT - A method for processing dielectric materials and electrodes to decrease leakage current is disclosed. The method includes a post dielectric anneal treatment in an oxidizing atmosphere to reduce the concentration of oxygen vacancies in the dielectric material. The method further includes a post metallization anneal treatment in an oxidizing atmosphere to reduce the concentration of interface states at the electrode/dielectric interface and to further reduce the concentration of oxygen vacancies in the dielectric material. | 12-20-2012 |
20130037913 | Inexpensive electrode materials to facilitate rutile phase titanium oxide - This disclosure provides a method of fabricating a semiconductor stack and associated device, such as a capacitor and DRAM cell. In particular, a bottom electrode has a material selected for lattice matching characteristics. This material may be created from a relatively inexpensive metal oxide which is processed to adopt a conductive, but difficult-to-produce oxide state, with specific crystalline form; to provide one example, specific materials are disclosed that are compatible with the growth of rutile phase titanium dioxide (TiO | 02-14-2013 |
20130052791 | DOPED ELECTRODE FOR DRAM APPLICATIONS - A metal oxide first electrode layer for a MIM DRAM capacitor is formed wherein the first and/or second electrode layers contain one or more dopants up to a total doping concentration that will not prevent the electrode layers from crystallizing during a subsequent anneal step. One or more of the dopants has a work function greater than about 5.0 eV. One or more of the dopants has a resistivity less than about 1000 μΩ cm. Advantageously, the electrode layers are conductive molybdenum oxide. | 02-28-2013 |
20130052792 | HIGH PERFORMANCE DIELECTRIC STACK FOR DRAM CAPACITOR - A method for fabricating a DRAM capacitor stack is described wherein the dielectric material is a multi-layer stack formed from a highly-doped material combined with a lightly or non-doped material. The highly-doped material remains amorphous with a crystalline content of less than 30% after an annealing step. The lightly or non-doped material becomes crystalline with a crystalline content of equal to or greater than 30% after an annealing step. The dielectric multi-layer stack maintains a high k-value while minimizing the leakage current and the EOT value. | 02-28-2013 |
20130056852 | Methods For Depositing High-K Dielectrics - Methods for depositing high-K dielectrics are described, including depositing a first electrode on a substrate, wherein the first electrode is chosen from the group consisting of platinum and ruthenium, applying an oxygen plasma treatment to the exposed metal to reduce the contact angle of a surface of the metal, and depositing a titanium oxide layer on the exposed metal using at least one of a chemical vapor deposition process and an atomic layer deposition process, wherein the titanium oxide layer comprises at least a portion rutile titanium oxide. | 03-07-2013 |
20130059066 | Method of forming strontium titanate films - Embodiments of the current invention include methods of forming a strontium titanate (SrTiO | 03-07-2013 |
20130069202 | Electrode Treatments for Enhanced DRAM Performance - A method for fabricating a dynamic random access memory capacitor is disclosed. The method may comprise depositing a first titanium nitride (TiN) electrode; creating a first layer of titanium dioxide (TiO | 03-21-2013 |
20130071989 | SINGLE-SIDED NON-NOBLE METAL ELECTRODE HYBRID MIM STACK FOR DRAM DEVICES - A method for forming a DRAM MIM capacitor stack having low leakage current and low EOT involves the use of a first electrode that serves as a template for promoting the high k phase of a subsequently deposited first dielectric layer. The first high k dielectric layer comprises a doped material that can be crystallized after a subsequent annealing treatment. An amorphous, doped high k second dielectric material is form on the first dielectric layer. The dopant concentration and the thickness of the second dielectric layer are chosen such that the second dielectric layer remains amorphous after a subsequent annealing treatment. A second electrode layer compatible with the second dielectric layer is formed on the second dielectric layer. | 03-21-2013 |
20130071991 | Electrode Treatments for Enhanced DRAM Performance - A method for fabricating a dynamic random access memory capacitor is disclosed. The method may comprise depositing a first titanium nitride (TiN) electrode; creating a first layer of titanium dioxide (TiO | 03-21-2013 |
20130072015 | Inexpensive Electrode Materials to Facilitate Rutile Phase Titanium Oxide - This disclosure provides a method of fabricating a semiconductor stack and associated device, such as a capacitor and DRAM cell. In particular, a bottom electrode has a material selected for lattice matching characteristics. This material may be created from a relatively inexpensive metal oxide which is processed to adopt a conductive, but difficult-to-produce oxide state, with specific crystalline form; to provide one example, specific materials are disclosed that are compatible with the growth of rutile phase titanium dioxide (TiO | 03-21-2013 |
20130095632 | Enhanced Work Function Layer Supporting Growth of Rutile Phase Titanium Oxide - This disclosure provides a method of fabricating a semiconductor stack and associated device, such as a capacitor and DRAM cell. In particular, a bottom electrode has a material selected for lattice matching characteristics. This material may be created from a relatively inexpensive metal oxide which is processed to adopt a conductive, but difficult-to-produce oxide state, with specific crystalline form; to provide one example, specific materials are disclosed that are compatible with the growth of rutile phase titanium dioxide (TiO | 04-18-2013 |
20130140619 | High Performance Dielectric Stack for DRAM Capacitor - A method for fabricating a DRAM capacitor stack is described wherein the dielectric material is a multi-layer stack formed from a highly-doped material combined with a lightly or non-doped material. The highly-doped material remains amorphous with a crystalline content of less than 30% after an annealing step. The lightly or non-doped material becomes crystalline with a crystalline content of equal to or greater than 30% after an annealing step. The dielectric multi-layer stack maintains a high k-value while minimizing the leakage current and the EOT value. | 06-06-2013 |
20130140675 | Method for ALD Deposition Rate Enhancement - A method for fabricating a dynamic random access memory (DRAM) capacitor includes forming a first electrode layer, forming a catalytic layer on the first electrode layer, optionally annealing the catalytic layer, forming a dielectric layer on the catalytic layer, optionally annealing the dielectric layer, forming a second electrode layer on the dielectric layer, and optionally annealing the capacitor stack. Advantageously, the electrode layers are TiN, the catalytic layer is MoO | 06-06-2013 |
20130143379 | LEAKAGE REDUCTION IN DRAM MIM CAPACITORS - A method for reducing the leakage current in DRAM MIM capacitors comprises forming a multi-layer dielectric stack from an amorphous highly doped material, an amorphous high band gap material, and a lightly or non-doped material. The highly doped material will remain amorphous (<30% crystalline) after an anneal step. The high band gap material will remain amorphous (<30% crystalline) after an anneal step. The lightly or non-doped material will become crystalline (≧30% crystalline) after an anneal step. The high band gap material is formed between the amorphous highly doped material and the lightly or non-doped material and provides an intermediate barrier to conduction through the multi-layer dielectric stack. | 06-06-2013 |
20130143384 | HIGH PERFORMANCE DIELECTRIC STACK FOR DRAM CAPACITOR - A method for fabricating a DRAM capacitor stack is described wherein the dielectric material is a multi-layer stack formed from a highly-doped material combined with a lightly or non-doped material. The highly-doped material remains amorphous with a crystalline content of less than 30% after an annealing step. The lightly or non-doped material becomes crystalline with a crystalline content of equal to or greater than 30% after an annealing step. The dielectric multi-layer stack maintains a high k-value while minimizing the leakage current and the EOT value. | 06-06-2013 |
20130217202 | HIGH PERFORMANCE DIELECTRIC STACK FOR DRAM CAPACITOR - A method for fabricating a DRAM capacitor stack is described wherein the dielectric material is a multi-layer stack formed from a highly-doped material combined with a lightly or non-doped material. The highly-doped material remains amorphous with a crystalline content of less than 30% after an annealing step. The lightly or non-doped material becomes crystalline with a crystalline content of equal to or greater than 30% after an annealing step. The dielectric multi-layer stack maintains a high k-value while minimizing the leakage current and the EOT value. | 08-22-2013 |
20130270673 | DOPED ELECTRODES FOR DRAM APPLICATIONS - A metal oxide first electrode layer for a MIM DRAM capacitor is formed wherein the first and/or second electrode layers contain one or more dopants up to a total doping concentration that will not prevent the electrode layers from crystallizing during a subsequent anneal step. One or more of the dopants has a work function greater than about 5.0 eV. One or more of the dopants has a resistivity less than about 1000 μΩ cm. Advantageously, the electrode layers are conductive molybdenum oxide. | 10-17-2013 |
20140167221 | METHODS TO IMPROVE LEAKAGE OF HIGH K MATERIALS - A method for reducing the leakage current in DRAM Metal-Insulator-Metal capacitors includes forming a capacitor stack including an oxygen donor layer inserted between the dielectric layer and at least one of the two electrode layers. In some embodiments, the dielectric layer may be doped with an oxygen donor dopant. The oxygen donor materials provide oxygen to the dielectric layer and reduce the concentration of oxygen vacancies, thus reducing the leakage current. | 06-19-2014 |
20140170833 | Methods to Improve Leakage of High K Materials - A method for reducing the leakage current in DRAM Metal-Insulator-Metal capacitors includes forming a capacitor stack including an oxygen donor dopant incorporated within the dielectric layer. The oxygen donor dopants may be incorporated within the dielectric layer during the formation of the dielectric layer. The oxygen donor materials provide oxygen to the dielectric layer and reduce the concentration of oxygen vacancies, thus reducing the leakage current. | 06-19-2014 |
20140183695 | Methods for Reproducible Flash Layer Deposition - A method for reducing the leakage current in DRAM Metal-Insulator-Metal capacitors includes forming a flash layer between the dielectric layer and the first electrode layer. A method for reducing the leakage current in DRAM Metal-Insulator-Metal capacitors includes forming a capping layer between the dielectric layer and the second electrode layer. The flash layer and the capping layer can be formed using an atomic layer deposition (ALD) technique. The precursor materials used for forming the flash layer and the capping layer are selected such they include at least one metal-oxygen bond. Additionally, the precursor materials are selected to also include “bulky” ligands. | 07-03-2014 |
20140183696 | Methods to Improve Leakage for ZrO2 Based High K MIM Capacitor - A first electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the first electrode layer contains a conductive base layer and conductive metal oxide layer. A second electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the second electrode layer contains a conductive base layer and conductive metal oxide layer. In some embodiments, both the first electrode layer and the second electrode layer contain a conductive base layer and conductive metal oxide layer. | 07-03-2014 |
20140187015 | Methods to Improve Leakage for ZrO2 Based High K MIM Capacitor - A first electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the first electrode layer contains a conductive base layer and conductive metal oxide layer. A second electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the second electrode layer contains a conductive base layer and conductive metal oxide layer. In some embodiments, both the first electrode layer and the second electrode layer contain a conductive base layer and conductive metal oxide layer. | 07-03-2014 |
20140187018 | Methods for Reproducible Flash Layer Deposition - A method for reducing the leakage current in DRAM Metal-Insulator-Metal capacitors includes forming a flash layer between the dielectric layer and the first electrode layer. A method for reducing the leakage current in DRAM Metal-Insulator-Metal capacitors includes forming a capping layer between the dielectric layer and the second electrode layer. The flash layer and the capping layer can be formed using an atomic layer deposition (ALD) technique. The precursor materials used for forming the flash layer and the capping layer are selected such they include at least one metal-oxygen bond. Additionally, the precursor materials are selected to also include “bulky” ligands. | 07-03-2014 |
Patent application number | Description | Published |
20090046139 | SYSTEM AND METHOD FOR DISTRIBUTED MEETINGS - A system and method for teleconferencing and recording of meetings. The system uses a variety of capture devices (a novel 360° camera, a whiteboard camera, a presenter view camera, a remote view camera, and a microphone array) to provide a rich experience for people who want to participate in a meeting from a distance. The system is also combined with speaker clustering, spatial indexing, and time compression to provide a rich experience for people who miss a meeting and want to watch it afterward. | 02-19-2009 |
20090083010 | Correlative Multi-Label Image Annotation - Correlative multi-label image annotation may entail annotating an image by indicating respective labels for respective concepts. In an example embodiment, a classifier is to annotate an image by implementing a labeling function that maps an input feature space and a label space to a combination feature vector. The combination feature vector models both features of individual ones of the concepts and correlations among the concepts. | 03-26-2009 |
20090125461 | Multi-Label Active Learning - Multi-label active learning may entail training a classifier with a set of training samples having multiple labels per sample. In an example embodiment, a method includes accepting a set of training samples, with the set of training samples having multiple respective samples that are each respectively associated with multiple labels. The set of training samples is analyzed to select a sample-label pair responsive to at least one error parameter. The selected sample-label pair is then submitted to an oracle for labeling. | 05-14-2009 |
20090290802 | CONCURRENT MULTIPLE-INSTANCE LEARNING FOR IMAGE CATEGORIZATION - The concurrent multiple instance learning technique described encodes the inter-dependency between instances (e.g. regions in an image) in order to predict a label for a future instance, and, if desired the label for an image determined from the label of these instances. The technique, in one embodiment, uses a concurrent tensor to model the semantic linkage between instances in a set of images. Based on the concurrent tensor, rank-1 supersymmetric non-negative tensor factorization (SNTF) can be applied to estimate the probability of each instance being relevant to a target category. In one embodiment, the technique formulates the label prediction processes in a regularization framework, which avoids overfitting, and significantly improves a learning machine's generalization capability, similar to that in SVMs. The technique, in one embodiment, uses Reproducing Kernel Hilbert Space (RKHS) to extend predicted labels to the whole feature space based on the generalized representer theorem. | 11-26-2009 |
20100074537 | KERNELIZED SPATIAL-CONTEXTUAL IMAGE CLASSIFICATION - Kernelized spatial-contextual image classification is disclosed. One embodiment comprises generating a first spatial-contextual model to represent a first image, the first spatial-contextual model having a plurality of interconnected nodes arranged in a first pattern of connections with each node connected to at least one other node, generating a second spatial-contextual model to represent a second image using the first pattern of connections, and estimating the distance between corresponding nodes in the first spatial-contextual model and the second spatial-contextual model based on a relationship with adjacent connected nodes to determine a distance between the first image and the second image. | 03-25-2010 |
20120063347 | Methods and Systems for Estimating Network Available Bandwidth Using Packet Pairs and Spatial Filtering - Estimation of available bandwidth on a network uses packet pairs and spatially filtering. Packet pairs are transmitted over the network. The dispersion of the packet pairs is used to generate samples of the available bandwidth, which are then classified into bins to generate a histogram. The bins can have uniform bin widths, and the histogram data can be aged so that older samples are given less weight in the estimation. The histogram data is then spatially filtered. Kernel density algorithms can be used to spatially filter the histogram data. The network available bandwidth is estimated using the spatially filtered histogram data. Alternatively, the spatially filtered histogram data can be temporally filtered before the available bandwidth is estimated. | 03-15-2012 |
20120141968 | Evaluation Assistant for Online Discussion - Discussion evaluation may be provided. First, an assignment page including an evaluation link may be displayed and a user initiated input corresponding to the evaluation link may be received. Next, an evaluation view may be displayed in response to the received user initiated input. The displayed evaluation view may comprise an evaluation assistant data section and a raw discussion data section. Evaluation data may then be received in response to the displayed evaluation view. | 06-07-2012 |
20130006957 | GESTURE-BASED SEARCH - Computer-readable media, computer systems, and computing devices for initiating a search function, such as presentation of a search box or initiation of a search, is provided. In one embodiment, the method includes detecting movement of a selector from within a display area to an edge of the display area. Such a selector can be controlled by an input device coupled to a user device. In response to detecting movement of the selector from within the display area to the edge of the display area, a search-query input area associated with a search engine is presented within a display screen view. | 01-03-2013 |
20140368620 | USER INTERFACE FOR THREE-DIMENSIONAL MODELING - A method of acquiring a set of images useable to 3D model a physical object includes imaging the physical object with a camera, and displaying with the camera a current view of the physical object as imaged by the camera from a current perspective. The method further includes displaying with the camera a visual cue overlaying the current view and indicating perspectives from which the physical object is to be imaged to acquire the set of images. | 12-18-2014 |
Patent application number | Description | Published |
20090061704 | Weed Cutter for a Craft Propelled by a Water Jet - A device for cutting weeds carried by water inducted into a housing includes an intake, an outlet, an impeller for pumping water from the intake to the outlet as the impeller rotates about an axis, the impeller including a blade formed with a leading edge facing the intake, and a baffle secured against movement and including a cutting edge located adjacent the leading edge when the leading edge rotates to the location of the cutting edge. | 03-05-2009 |
20090093174 | Watercraft Propelled By a Water Jet - A watercraft propelled by a water jet includes an sealed hull portion including an upper deck and a bottom surface, an engine compartment located behind the sealed hull portion and containing a propulsion and steering system including an engine, a bladed impeller driven by the engine for inducting water and forcing the inducted water away from the craft through a directionally displaceable nozzle, and a control lever located on the upper deck including an engine throttle control and a steering control for adjusting the directionally displacement of the nozzle. | 04-09-2009 |
20090117789 | Engine for Driving a Watercraft Propelled by a Water Jet - A system for driving a water induction and discharge system of a watercraft propelled by a water jet includes a water impeller, an engine including a driven shaft and a first chamber for containing engine oil, a second chamber for containing engine oil, a pinion secured to the driven shaft and located in the second chamber, a gear located in the second chamber, engaged with the pinion and driveably connected to the water impeller, and a dam located in the second chamber for limiting oil flow across the dam into the oil contained in the second chamber. | 05-07-2009 |
20090124144 | System for Steering and Maneuvering a Watercraft Propelled by a Water Jet - A system for steering a watercraft propelled by a water jet includes a control lever supported to pivot rightward and leftward about a first axis, a nozzle supported on the watercraft to pivot rightward and leftward and through which water is discharged from the watercraft, first and second cables, and a steering module interconnected by the cables to the control lever and connected to the nozzle, supported to pivot laterally about a second axis and to pivot the nozzle laterally in response to pivoting of the control lever about the first axis. | 05-14-2009 |