Patent application number | Description | Published |
20090303306 | TECHNIQUES FOR CHANGING TEMPERATURE OF A PLATEN - Techniques for changing temperature of a platen are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for changing temperature of a platen comprising a platen and one or more movable thermal pads comprising one or more thermal fluid channels to carry a thermal fluid configured to affect a temperature of the platen. | 12-10-2009 |
20090305489 | MULTILAYER ELECTROSTATIC CHUCK WAFER PLATEN - This layered assembly utilizes two-piece construction, with an electrically nonconductive layer and a thermally conductive layer. Rather than using metal, the thermally conductive layer is made from a composite material, having both metal and a CTE modifying agent. This composite material may a coefficient of thermal expansion close to or identical to that of the nonconductive layer, thereby eliminating many of the drawbacks of the prior art. In one embodiment, the composite material is a mixture of aluminum and carbon (or graphite) fiber. In a further embodiment, one or more fluid conduits are placed in the mold before the layer is cast. These conduits serve as the fluid passageways in the electrostatic chuck. In another embodiment, the composite material is a mixture of a semiconductor material, such as silicon, and aluminum where the conduits are formed by machining and bonding. | 12-10-2009 |
20100084117 | PLATEN COOLING MECHANISM FOR CRYOGENIC ION IMPLANTING - A system and method for altering and maintaining the temperature of a workpiece, especially at cryogenic temperatures, is disclosed. The platen on which the workpiece is located contains at least one inner conduit through which fluid can flow. An apparatus, in communication with a fluid source, is brought into contact with the platen. For example, an inlet and outlet on the platen and the ports of the apparatus may mate. Once the platen and the apparatus are successfully mated, fluid is passed through the apparatus and into the platen. Once the platen (and therefore the attached workpiece) has reached the desired temperature, the apparatus stops the flow of fluid through the platen. The apparatus and the platen then disengage. The platen is then free to move and rotated as required by the ion implantation process. When the platen temperature deviates from the desired temperature, the above process is repeated. | 04-08-2010 |
20100084579 | FLUID DELIVERY MECHANISM FOR VACUUM WAFER PROCESSING SYSTEM - The fluid delivery mechanism of the present disclosure provides a solution for use in a single axis of motion that allows the connection of one or more fluid flow paths over a wide range of temperatures into a vacuum environment. The mechanism does not employ flexible tubing that is prone to fatigue, especially at very low temperatures. In one embodiment, a tube is axially moved within a sealed piston to allow for fluid delivery. In a second embodiment, bellows are used to provide the required functionality. In another embodiment, it is possible to achieve movement in two or more axis of motion by utilizing two or more appropriately configured mechanisms. | 04-08-2010 |
20100296208 | Technique for Limiting Transmission of Fault Current - A new type of superconducting fault current limiter is disclosed, which can advantageously be used with high voltage transmission networks. The circuit is electrically connected to two terminals, which connect to the transmission network. The superconducting circuit is located within an enclosure or tank, which is electrically isolated from ground. Therefore, the voltage difference between the enclosure and the superconducting circuit, and between the enclosure and the terminals are significantly less than exist in current deployments. In some embodiments, the enclosure is electrically connected to one of the terminals, while in other embodiments, the enclosure is electrically isolated from the terminals. The circuit can be combined with other like circuits to address a wide range of current transmission network configurations. | 11-25-2010 |
20110073780 | OPTICAL HEATER FOR CRYOGENIC ION IMPLANTER SURFACE REGENERATION - In an ion implanter, one or more optical heaters are disposed above a pair of support arms. The support arms have an engaged positioned which is disposed beneath a platen and a retractable position displaced vertically away from the platen and rotated away from the platen in a direction parallel to a planar surface thereof. When the support arms are in the retracted position, the one or more optical heaters is configured to provide optical energy incident on surfaces of the cooling pads disposed on the support arms for removal of unwanted materials thereon. In this manner, the optical heaters are used during a regeneration cycle of cryogenic surfaces in an ion implanter. | 03-31-2011 |
20110143461 | IN VACUUM OPTICAL WAFER HEATER FOR CRYOGENIC PROCESSING - A vacuum assembly used for warming processed substrates above the dew point to prevent unwanted moisture on the processed substrate surfaces as well as reducing negative impact on manufacturing throughput. The vacuum assembly includes a processing chamber, a substrate handling robot, and a heater which may be an optical heater. The processing chamber is configured to cryogenically process one or more substrates. The transfer chamber is connected to the processing chamber and houses the substrate handling robot. The substrate handling robot is configured to displace one or more substrates from the processing chamber to the transfer chamber. The heater is connected to the transfer chamber above the substrate handling robot such that the heater emits energy incident on the substrate when the substrate handling robot displaces the substrate in the transfer chamber. | 06-16-2011 |
20130201588 | TECHNIQUE FOR LIMITING TRANSMISSION OF FAULT CURRENT - New techniques for limiting transmission of fault current are disclosed. In one particular exemplary embodiment, the technique may be realized with a new type of apparatus for limiting transmission of fault current. The apparatus may comprise: a first enclosure electrically decoupled from ground, such that the first enclosure is electrically isolated from ground potential; first and second terminals, at least one of which is electrically connected to first one or more current carrying lines; and a first superconducting circuit contained in the first enclosure, the first superconducting circuit electrically connected to the first and second terminals, wherein the first enclosure is maintained at same electrical potential as the first one or more current carrying lines. | 08-08-2013 |
20140001746 | Vacuum Insulated Fitting Enclosure | 01-02-2014 |
20140001747 | Vacuum Insulated Cryogenic Fluid Transfer Hose | 01-02-2014 |
20140323313 | Technique For Limiting Transmission Of Fault Current - A new type of superconducting fault current limiter is disclosed, which can advantageously be used with high voltage transmission networks. The circuit is electrically connected to two terminals, which connect to the transmission network. The superconducting circuit is located within an enclosure or tank, which is electrically isolated from ground. Therefore, the voltage difference between the enclosure and the superconducting circuit, and between the enclosure and the terminals are significantly less than exist in current deployments. In some embodiments, the enclosure is electrically connected to one of the terminals, while in other embodiments, the enclosure is electrically isolated from the terminals. The circuit can be combined with other like circuits to address a wide range of current transmission network configurations. | 10-30-2014 |
20140324221 | FORCE SENSING SYSTEM FOR SUBSTRATE LIFTING APPARATUS - A system and method for monitoring forces on a substrate lifting apparatus. The system includes a platen cartridge with a platen and a movable lifting portion. The movable lifting portion includes a plurality of lifting arms coupled to a plurality of lift pins. A plurality of force sensing elements are associated with respective ones of the plurality of lifting arms and the plurality of lift pins. A controller receives signals from the plurality of force sensing elements, correlates the signals to respective forces applied to said plurality of lift pins. The correlated forces may indicate to the controller that an error condition exists, such as a stuck wafer, a broken wafer, a mis-positioned wafer, or a mechanical malfunction. | 10-30-2014 |
20150071327 | GAS COUPLED PROBE FOR SUBSTRATE TEMPERATURE MEASUREMENT - A low pressure temperature sensor for measuring the temperature of a substrate during semiconductor device manufacturing is generally described. Various embodiments describe a gas chamber having an opening disposed within a dielectric plate of a platen with a seal disposed around the opening in the gas chamber such that the opening in the gas chamber may be sealed against the substrate. Furthermore, a temperature sensor and a spring are disposed in the gas chamber, the spring biased to place the temperature sensor in contact with the substrate. Additionally, a gas source configured to pressurize the gas chamber with a low pressure gas in order to increase thermal conductivity between the substrate and the temperature sensor is provided. | 03-12-2015 |