Patent application number | Description | Published |
20090160097 | FERROELECTRIC MEDIA WITH ROBUST SERVO MARKS AND STORAGE AREAS WITH LOW LEAKAGE CURRENT - A single annealing process simultaneously creates local areas of ferroelectric imprint that can be used as markers, and areas with low leakage current that exhibit ideal symmetric switching on ferroelectric recording media. | 06-25-2009 |
20090316462 | MAGNETIC TRACKS WITH DOMAIN WALL STORAGE ANCHORS - Magnetic shift registers in which data writing and reading is accomplished by moving the magnetic domain walls by electric current. Various embodiments of domain wall nodes or anchors that stabilize a domain wall are provided. In some embodiments, the wall anchors are elements separate from the magnetic track. In other embodiments, the wall anchors are disturbances in the physical configuration of the magnetic track. In still other embodiments, the wall anchors are disturbances in the material of the magnetic track. | 12-24-2009 |
20100034008 | MAGNETIC FIELD ASSISTED STRAM CELLS - Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations. | 02-11-2010 |
20100054111 | ASYMMETRIC WRITE FOR FERROELECTRIC STORAGE - A method of writing to ferroelectric storage medium includes the steps of applying a first write voltage to a ferroelectric layer for writing a first bit in a first polarization direction and applying a second write voltage to the ferroelectric layer for writing a second bit in a second polarization direction opposing the first polarization direction. The first write voltage having a first magnitude, and the second write voltage having a second magnitude being greater than the first magnitude. The ferroelectric layer having a ferroelectric imprint polarization direction, and the first polarization direction being substantially the same as the ferroelectric imprint polarization direction. The ferroelectric medium contains first bits with a first surface area that is substantially equal to second bits surface area. A probe storage apparatus can use this method and ferroelectric medium. | 03-04-2010 |
20100073984 | MAGNETIC SHIFT REGISTER AS COUNTER AND DATA STORAGE DEVICE - A register having a track with a first electrode is at the first end to supply a current to the track in a first direction and a second electrode at the second end to supply a current to the track in a second direction, the second direction being opposite to the first direction. A first domain wall anchor and a second domain wall anchor are positioned proximate the track between the first electrode and the second electrode. Each of the domain wall anchors has a ferromagnetic pinned layer and a barrier layer proximate the track, with the barrier layer between the track and the ferromagnetic pinned layer. The ferromagnetic layer has a magnetization orientation pinned perpendicular to the magnetization orientation of the track. | 03-25-2010 |
20110006275 | NON-VOLATILE RESISTIVE SENSE MEMORY - A resistive sense memory cell includes a layer of crystalline praseodymium calcium manganese oxide and a layer of amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack. A first and second electrode are separated by the resistive sense memory stack. The resistive sense memory cell can further include an oxygen diffusion barrier layer separating the layer of crystalline praseodymium calcium manganese oxide from the layer of amorphous praseodymium calcium manganese oxide a layer. Methods include depositing an amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack. | 01-13-2011 |
20120250405 | MAGNETIC FIELD ASSISTED STRAM CELLS - Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations. | 10-04-2012 |
20120273744 | NON-VOLATILE RESISTIVE SENSE MEMORY WITH IMPROVED SWITCHING - A resistive sense memory cell includes a layer of crystalline praseodymium calcium manganese oxide and a layer of amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack. A first and second electrode are separated by the resistive sense memory stack. The resistive sense memory cell can further include an oxygen diffusion barrier layer separating the layer of crystalline praseodymium calcium manganese oxide from the layer of amorphous praseodymium calcium manganese oxide a layer. Methods include depositing an amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack. | 11-01-2012 |
Patent application number | Description | Published |
20090086613 | Non-Destructive Readback For Ferroelectric Material - An apparatus that provides for non-destructive readback of a ferroelectric material. The apparatus can include a ferroelectric layer with a scannable surface wherein the ferroelectric layer has a compensation charge adjacent the scannable surface. The apparatus also can include an electrode adjacent the scannable surface to sense the compensation charge. A related method is also disclosed. | 04-02-2009 |
20090092805 | Ferroelectric Material With Polarization Pattern - An apparatus includes a ferroelectric layer and a polarization pattern configured in the ferroelectric layer to represent position data. The polarization pattern has a switchable polarization state domain and an unswitchable polarization state domain. A method includes providing a ferroelectric layer and establishing a polarization pattern in the ferroelectric layer to represent position data. | 04-09-2009 |
20110038246 | VOLTAGE PATTERN FOR FERROELECTRIC RECORDING HEAD - The presently disclosed technology teaches an improved voltage pattern for conductive tips utilized as moveable top electrodes for writing data bits into ferroelectric media. A conductive tip is dragged in contact or near contact with a ferroelectric surface forming a moveable top electrode on a ferroelectric media disk. A metallic film is deposited onto a bottom-side of the ferroelectric media forming a conductive bottom electrode. Applying electrical voltage pulses between the conductive tip and the bottom electrode induces polarization switching of the ferroelectric media under the head. The improved voltage pattern incorporates positive and negative overshoot voltages to induce a polarization switch in the ferroelectric media and positive and negative drag voltages to expand a polarized region on the ferroelectric media. Potential benefits of the improved voltage pattern include reduced cross-track blooming and reduced along-track blooming resulting in a more uniform track width and bit series length. | 02-17-2011 |
20120127785 | Using a Nearby Cell to Provide Field Assisted Switching in a Magnetic Memory Array - Method and apparatus for writing data to a magnetic memory cell, such as a spin-torque transfer random access memory (STRAM) memory cell. In accordance with various embodiments, a write current is applied through a selected magnetic memory cell to initiate magnetic precession of the selected cell to a desired magnetic state. A field assist current is concurrently flowed through an adjacent memory cell to generate a magnetic field that assists in the precession of the selected cell to the desired magnetic state. | 05-24-2012 |