Patent application number | Description | Published |
20100271229 | SYSTEMS AND METHODS FOR CALIBRATING END EFFECTOR ALIGNMENT IN A PLASMA PROCESSING SYSTEM - A method for calibrating alignment of an end effector with respect to a chuck in a plasma processing system is provided. The method including positioning the end effector over the chuck and taking a still image of the chuck and the end effector. The method including processing the still image to ascertain the center of the chuck and the end effector-defined center defined by the end effector. The method including determining a positional difference between the end effector-defined center and the center of the chuck. The method also including providing the positional difference to a robot controller to control a robot mechanism to adjust the positional difference when the end effector transports a wafer | 10-28-2010 |
20100272347 | SYSTEMS AND METHODS FOR DYNAMIC ALIGNMENT BEAM CALIBRATION - A method for performing DA (Dynamic Alignment) beam calibration in a plasma processing system is provided. The method including acquiring a positional difference, the positional difference is acquired using an optical imaging approach. The optical imaging approach comprising of positioning the wafer on the end effector, taking a still image of the wafer on the end effector, processing the still image to ascertain the center of the wafer and an end effector-defined center defined by the end effector, and determining the positional difference between the center of the wafer and the end effector-defined center defined by the end effector. The method also includes centering a wafer with respect to an end effector by compensating for a positional difference between the wafer and the end effector with robot movement compensation. The method including moving the wafer and the end effector through DA beams associated with a plasma processing module. The method also includes obtaining a reference DA beam pattern by recording a break-and-make pattern of the DA beams. The break-and-make pattern occurring as the wafer and the end effector move through the DA beams. | 10-28-2010 |
20100277749 | ARRANGEMENTS AND METHODS FOR DETERMINING POSITIONS AND OFFSETS - A method for determining positions and offsets in a plasma processing system, the plasma processing system including at least a chuck and an upper electrode is provided. The method including moving a traversing assembly along a first plurality of paths to generate a first plurality of data sets, the traversing assembly including at least a light source, the light source providing a light beam, moving the traversing assembly along each path of the first plurality of paths causing the light beam to traverse the chuck and resulting in one or more data sets of the first plurality of data sets. The method also including receiving the first plurality of data sets and analyzing the first plurality of data sets to identify a first set of at least three discontinuities, wherein the first set of at least three discontinuities are related to three or more reflected light signals generated when the light beam encounters an edge of the chuck. The method also including determining a center of the chuck using coordinate data associated with the first set of at least three discontinuities. | 11-04-2010 |
20100280790 | SYSTEMS AND METHODS FOR CALIBRATING END EFFECTOR ALIGNMENT USING AT LEAST A LIGHT SOURCE - A method for calibrating alignment of an end effector with respect to a chuck in a plasma processing system is provided. The method including providing a first light beam from the end effector to said chuck. The method including moving the end effector along a predefined calibration path such that the first light beam traverses a surface of the chuck. The method also includes receiving a set of reflected light signals, the set of reflected light signals being generated at least when the surface reflects the first light beam during the moving. The method including analyzing the set of reflected light signals to identify three or more discontinuities. The three or more discontinuities are related to three or more reflected light signals generated when the first light beam encounters an edge of the chuck. The method also including determining three or more coordinate data points based on the three or more discontinuities, the three or more coordinate data points representing three or more points on the edge of the chuck. The method includes determining a center of the chuck based on the three or more coordinate data points. | 11-04-2010 |
Patent application number | Description | Published |
20120101633 | Dual Sensing End Effector with Single Sensor - Systems, methods, and computer programs are presented for an end effector with a dual optical sensor. One end effector includes an arm, a mapping sensor, and a load sensor. The arm has one end connected to a pivoting joint, and a light signal is routed around the arm through a single light path. The mapping sensor is used for identifying the presence of the wafer when the wafer is not loaded on the end effector. The load sensor is used for identifying presence of the wafer on the end effector when the wafer is loaded on the end effector. The load sensor is defined by a second segment in the single light path such that the wafer intersects the second segment and interferes with the single light path when the wafer is loaded. A control module determines if an interruption in the single light path corresponds to an interruption of the single light path in the mapping sensor or the load sensor. As a result, one single light sensor is used to sense for two different conditions in the end effector. | 04-26-2012 |
20140017042 | END EFFECTOR HAVING MULTIPLE-POSITION CONTACT POINTS - An apparatus is provided for lifting a substrate. The apparatus comprises a first piece and a second piece. The apparatus further comprises a set of first contact points in a plane and a set of second contact points, where at least one contact point from each set is present on the first piece and the second piece. The apparatus also comprises an actuator that translates the first piece, substantially parallel to the plane, between a first position and a second position relative to the second piece. Additionally, the first position arranges the set of first contact points so that all of the contact points of the set of first contact points are able to engage the substrate, and the second position arranges the set of second contact points so that all of the contact points of the second set of contact points are able to engage the substrate. | 01-16-2014 |
20150174768 | MICROSTRUCTURES FOR IMPROVED WAFER HANDLING - Provided herein are high coefficient of friction contact surfaces for transfer of substrates including semiconductor wafers. In certain implementations, the contact surfaces include microstructures that exploit intermolecular surface forces for increased adhesion and friction in the x-y direction during substrate transfer, while allowing easy release in the z-direction without tilting the substrate. Also provided are robot end effectors including the contact surfaces and related high-throughput transfer systems and methods. | 06-25-2015 |
20150214091 | WAFER HANDLING TRACTION CONTROL SYSTEM - A wafer handling traction control system is provided that is able to detect slippage of a semiconductor wafer with respect to an end effector and is able to adjust the end effector's movement in order to minimize further slippage. Upon the detection of relative motion of the semiconductor wafer with respect to the end effector past a threshold amount, the end effector's movements are adjusted to minimize slippage of the semiconductor wafer. The wafer handling traction control system may include a sensor that detects relative motion between the semiconductor wafer and the end effector. | 07-30-2015 |
20160023353 | WAFER HANDLING TRACTION CONTROL SYSTEM - A wafer handling traction control system is provided that is able to detect slippage of a semiconductor wafer with respect to an end effector and is able to adjust the end effector's movement in order to minimize further slippage. Upon the detection of relative motion of the semiconductor wafer with respect to the end effector past a threshold amount, the end effector's movements are adjusted to minimize slippage of the semiconductor wafer. The wafer handling traction control system may include a sensor that detects relative motion between the semiconductor wafer and the end effector. | 01-28-2016 |