Patent application number | Description | Published |
20110018087 | PHOTODETECTOR ELEMENT - An element of photodetection of a radiation having a wavelength in vacuum close to a value λ | 01-27-2011 |
20110194804 | INTEGRATED OPTICAL COUPLER - An integrated optical coupler including in the medium separating a first integrated waveguide from a second substantially parallel integrated waveguide, a succession of strips parallel to one another and orthogonal to the general direction of the waveguides, said strips being made of a material having an absorption preventing the propagation of an electromagnetic wave across its volume, and having:
| 08-11-2011 |
20110204323 | SOURCE OF PHOTONS RESULTING FROM A RECOMBINATION OF LOCALIZED EXCITONS - A source of photons resulting from a recombination of localized excitons, including a semiconductor layer having a central portion surrounded with heavily-doped regions; above said central portion, a layer portion containing elements capable of being activated by excitons, coated with a first metallization; and under the semiconductor layer, a second metallization of greater extension than the first metallization. The distance between the first and second metallizations is on the order of from 10 to 60 nm; and the lateral extension of the first metallization is on the order of from λ0/10*n | 08-25-2011 |
20120181645 | PHOTODETECTOR OPTIMIZED BY METAL TEXTURING PROVIDED ON THE REAR SURFACE - Backlit detector for the detection of electromagnetic radiation around a predetermined wavelength, including a semiconductor absorption layer, formed above a transparent medium, capable of transmitting at least some of said radiation, and a minor above the semiconductor layer, and placed between the minor and the semiconductor layer, a periodic grating of metallic patterns, the minor and the grating being included in a layer of material transparent to said radiation and formed on the semiconductor layer. The minor and the grating verify: | 07-19-2012 |
20130264543 | PHOTODETECTION DEVICE - The present invention relates to a photodetector for detecting an infrared-light emission having a given wavelength (λ) comprising a multilayer with: a layer ( | 10-10-2013 |
20140061832 | SURFACE PLASMON DEVICE - The electro-optical device includes a semiconductor layer, a first metal layer and an electrical insulator layer disposed between the semiconductor layer and the first metal layer. The electrical insulator layer includes a silicon nitride layer so as to provide an interface between the first metal layer and the silicon nitride layer. The electro-optical device is configured to carry a plasmonic wave. | 03-06-2014 |
20140175282 | OPTICAL FREQUENCY FILTER AND A DETECTOR INCLUDING SUCH A FILTER - An optical frequency filter comprises a support layer having reflective elements formed thereon, the reflective elements defining at least one periodic grid of substantially parallel slits, the period P, the height, and the width of the slits being selected in such a manner that the reflective elements form a wavelength-selective structure for a wavelength lying in a determined range of wavelengths. The support layer material has a refractive index n | 06-26-2014 |
20140319465 | PHOTODETECTION DEVICE - The invention relates to a photodetector for infrared light radiation having a given wavelength (λ), including a stack of layers consisting of: a continuous layer ( | 10-30-2014 |