Roberts, ID
Alan Brent Roberts, Moscow, ID US
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20090173476 | SPRAY COOLING THERMAL MANAGEMENT SYSTEM AND METHOD FOR SEMICONDUCTOR PROBING, DIAGNOSTICS, AND FAILURE ANALYSIS - A micro-spray cooling system beneficial for use in testers of electrically stimulated integrated circuit chips is disclosed. The system includes micro-spray heads disposed about a probe head. The spray heads and probe head are disposed in a sealed manner inside a spray chamber that, during operation, is urged in a sealing manner onto a sealing plate holding the integrated circuit under test. The atomized mist cools the integrated circuit and then condenses on the spray chamber wall. The condensed fluid is pumped out of the chamber and is circulated in a chiller, so as to be recirculated and injected again into the micro-spray heads. The pressure inside the spray chamber may be controlled to provide a desired boiling point. | 07-09-2009 |
20120007623 | SPRAY COOLING THERMAL MANAGEMENT SYSTEM AND METHOD FOR SEMICONDUCTOR PROBING, DIAGNOSTICS, AND FAILURE ANALYSIS - A micro-spray cooling system beneficial for use in testers of electrically stimulated integrated circuit chips is disclosed. The system includes micro-spray heads disposed about a probe head. The spray heads and probe head are disposed in a sealed manner inside a spray chamber that, during operation, is urged in a sealing manner onto a sealing plate holding the integrated circuit under test. The atomized mist cools the integrated circuit and then condenses on the spray chamber wall. The condensed fluid is pumped out of the chamber and is circulated in a chiller, so as to be re-circulated and injected again into the micro-spray heads. The pressure inside the spray chamber may be controlled to provide a desired boiling point. | 01-12-2012 |
Allen Roberts, Idaho Falls, ID US
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20080246237 | SWAY BAR FOR SNOWMOBILES - This invention relates to an improved snowmobile ski having a vertical fin on the topside of the ski with a surface area large enough to minimize or prevent sideways slippage of the ski during a turn. The fin, if a single fin is used, is located adjacent the outboard edge of the ski. A snowmobile ski with dual topside fins having outwardly projecting lips along the upper edges of said fins has improved performance in deep snow. | 10-09-2008 |
20080271303 | SNOWMOBILE SKI - A snowmobile ski with a pair of outboard keels and laterally projecting, upwardly slanting, lateral wings attached proximate the outboard keels is disclosed. A ski of this structure has improved flotation and resistance to side slippage in turns. | 11-06-2008 |
20110042909 | SNOWMOBILE SKIS HAVING ELONGATED WING MEMBERS - Snowmobile skis include at least one elongated wing member projecting laterally outward and upward from a lateral side of a base portion of the ski. The at least one elongated wing member has a lower surface that extends vertically over and laterally outward from the lower running surface of the ski. At least a longitudinal section of the lower surface of the at least one elongated wing member may include a portion having a curved, concave shape. The lower surface of the at least one elongated wing member may extend a greater distance vertically over the lower running surface of the ski near a longitudinal midportion of the ski relative to a distance by which the lower surface of the at least one elongated wing member extends vertically over the lower running surface of the ski near a longitudinal front portion of the ski and near a longitudinal rear portion of the ski. | 02-24-2011 |
Ceredig Roberts, Boise, ID US
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20100148249 | Method Of Manufacturing A Memory Device - A memory device comprises an active area comprising a source and at least two drains defining a first axis. At least two substantially parallel word lines are defined by a first pitch, with one word line located between each drain and the source. Digit lines are defined by a second pitch, one of the digit lines being coupled to the source and forming a second axis. The active areas of the memory array are tilted at 45° to the grid defined by the word lines and digit lines. The word line pitch is about 1.5F, while the digit line pitch is about 3F. | 06-17-2010 |
20110220994 | Method of Forming a DRAM Array of Devices with Vertically Integrated Recessed Access Device and Digitline - A method is disclosed for forming a memory device having buried access lines (e.g., wordlines) and buried data/sense lines (e.g., digitlines) disposed below vertical cell contacts. The buried wordlines may be formed trenches in a substrate extending in a first direction, and the buried digitlines may be formed from trenches in a substrate extending in a second direction perpendicular to the first direction. The buried digitlines may be coupled to a silicon sidewall by a digitline contact disposed between the digitlines and the silicon substrate. | 09-15-2011 |
20140231894 | METHOD OF FORMING A DRAM ARRAY OF DEVICES WITH VERTICALLY INTEGRATED RECESSED ACCESS DEVICE AND DIGITLINE - A method is disclosed for forming a memory device having buried access lines (e.g., wordlines) and buried data/sense lines (e.g., digitlines) disposed below vertical cell contacts. The buried wordlines may be formed trenches in a substrate extending in a first direction, and the buried digitlines may be formed from trenches in a substrate extending in a second direction perpendicular to the first direction. The buried digitlines may be coupled to a silicon sidewall by a digitline contact disposed between the digitlines and the silicon substrate. | 08-21-2014 |
David Alan Roberts, Meridian, ID US
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20100182020 | Intrusion detection using a conductive material - Tampering with an assembly that includes an integrated circuit is detected by measuring a change in at least one property of a conductive molding formed over at least a portion of the integrated circuit. For example, the conductive molding can be a mixture of resin with conductive powder and/or fibers. The molding can be formed as a continuous region or as strips of conductive material. Conductive contacts are positioned to provide and receive current through portions of the conductive material. For example, the property of the molding can be an impedance of a portion of the conductive molding. A significant change in the impedance measured through one or more conductive contacts indicates tampering with the assembly. | 07-22-2010 |
Gary D. Roberts, Montpelier, ID US
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20110206526 | VERTICAL-AXIS WIND TURBINE HAVING LOGARITHMIC CURVED AIRFOILS - A vertical-axis, stator-less wind turbine includes a rotor rotatable about a vertical axis. The rotor has a plurality of vertically oriented rotor airfoils disposed circumferentially and with equiangular symmetry about the vertical axis. Each rotor airfoil has a substantially logarithmic curvature. | 08-25-2011 |
Jeffrey B. Roberts, Ammon, ID US
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20080232005 | METHOD FOR PROTECTING AN ELECTRIC GENERATOR - A method for protecting an electrical generator which includes providing an electrical generator which is normally synchronously operated with an electrical power grid; providing a synchronizing signal from the electrical generator; establishing a reference signal; and electrically isolating the electrical generator from the electrical power grid if the synchronizing signal is not in phase with the reference signal. | 09-25-2008 |
20100014198 | Method, Apparatus and Computer Program Product for Fault Protection - An apparatus is provided for fault protection. The apparatus may include one or more electronic components configured to receive a single phase-to-ground fault signal and a double phase-to-ground fault signal subsequent to receiving the single phase-to-ground fault signal. The one or more of electronic components may be further configured to provide for a delay while the single phase-to-ground fault signal indicates that a single phase-to-ground fault is present on the ungrounded power system and the double phase-to-ground fault signal indicates that the double phase-to-ground fault is present on the ungrounded power system. The delay may allow for an opportunity to isolate a phase-to-ground fault on a first phase from a phase-to-ground fault on a second phase. Associated methods and computer program products are also provided. | 01-21-2010 |
John Charles Roberts, Middleton, ID US
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20140097293 | Airplane Shock Absorbing Suspension - A landing gear strut incorporating an oleo-pneumatic shock absorber with a bungee return spring. An oleo-pneumatic shock absorber is a device engineered for slowing down a moving mass. The shock absorber converts the kinetic energy of the impact into heat due to the friction of oil being driven through narrow orifices. The shock then recovers using air and or spring pressure. The recovery is governed by the flow rate of the fluid to the original reservoir. In the case of an aircraft this results in less bounce, shorter stop time, smoother overall ride, and safer landings. | 04-10-2014 |
Martin C. Roberts, Boise, ID US
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20130026471 | Circuit Structures, Memory Circuitry, And Methods - A circuit structure includes a substrate having an array region and a peripheral region. The substrate in the array and peripheral regions includes insulator material over first semiconductor material, conductive material over the insulator material, and second semiconductor material over the conductive material. The array region includes vertical circuit devices which include the second semiconductor material. The peripheral region includes horizontal circuit devices which include the second semiconductor material. The horizontal circuit devices in the peripheral region individually have a floating body which includes the second semiconductor material. The conductive material in the peripheral region is under and electrically coupled to the second semiconductor material of the floating bodies. Conductive straps in the array region are under the vertical circuit devices. The conductive straps include the conductive material and individually are electrically coupled to a plurality of the vertical circuit devices in the array region. Other implementations are disclosed. | 01-31-2013 |
20140273358 | Circuit Structures, Memory Circuitry, And Methods - A circuit structure includes a substrate having an array region and a peripheral region. The substrate in the array and peripheral regions includes insulator material over first semiconductor material, conductive material over the insulator material, and second semiconductor material over the conductive material. The array region includes vertical circuit devices which include the second semiconductor material. The peripheral region includes horizontal circuit devices which include the second semiconductor material. The horizontal circuit devices in the peripheral region individually have a floating body which includes the second semiconductor material. The conductive material in the peripheral region is under and electrically coupled to the second semiconductor material of the floating bodies. Conductive straps in the array region are under the vertical circuit devices. The conductive straps include the conductive material and individually are electrically coupled to a plurality of the vertical circuit devices in the array region. Other implementations are disclosed. | 09-18-2014 |
M. Ceredig Roberts, Boise, ID US
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20110300689 | Methods of Forming Trench Isolation in the Fabrication of Integrated Circuitry and Methods of Fabricating Integrated Circuitry - First and second isolation trenches are formed into semiconductive material of a semiconductor substrate. The first isolation trench has a narrowest outermost cross sectional dimension which is less than that of the second isolation trench. An insulative layer is deposited to within the first and second isolation trenches effective to fill remaining volume of the first isolation trench within the semiconductive material but not that of the second isolation trench within the semiconductive material. The insulative layer comprises silicon dioxide deposited from flowing TEOS to the first and second isolation trenches. A spin-on-dielectric is deposited over the silicon dioxide deposited from flowing the TEOS within the second isolation trench within the semiconductive material, but not within the first isolation trench within the semiconductive material. The spin-on-dielectric is deposited effective to fill remaining volume of the second isolation trench within the semiconductive material. The spin-on-dielectric is densified within the second isolation trench. | 12-08-2011 |
Stuart L. Roberts, Boise, ID US
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20110104857 | PACKAGED MICRODEVICES AND METHODS FOR MANUFACTURING PACKAGED MICRODEVICES - Microdevices and methods for packaging microdevices. One embodiment of a packaged microdevice includes a substrate having a mounting area, contacts in the mounting area, and external connectors electrically coupled to corresponding contacts. The microdevice also includes a die located across from the mounting area and spaced apart from the substrate by a gap. The die has an integrated circuit and pads electrically coupled to the integrated circuit. The microdevice further includes first and second conductive elements in the gap that form interconnects between the contacts of the substrate and corresponding pads of the die. The first conductive elements are electrically connected to contacts on the substrate, and the second conductive elements are electrically coupled to corresponding pads of the die. The first conductive elements are attached to the second conductive elements at corresponding interfaces such that the interconnects connect the contacts of the substrate directly to corresponding pads on the die within the gap. | 05-05-2011 |
20130193581 | PACKAGED MICRODEVICES AND METHODS FOR MANUFACTURING PACKAGED MICRODEVICES - Microdevices and methods for packaging microdevices. One embodiment of a packaged microdevice includes a substrate having a mounting area, contacts in the mounting area, and external connectors electrically coupled to corresponding contacts. The microdevice also includes a die located across from the mounting area and spaced apart from the substrate by a gap. The die has an integrated circuit and pads electrically coupled to the integrated circuit. The microdevice further includes first and second conductive elements in the gap that form interconnects between the contacts of the substrate and corresponding pads of the die. The first conductive elements are electrically connected to contacts on the substrate, and the second conductive elements are electrically coupled to corresponding pads of the die. The first conductive elements are attached to the second conductive elements at corresponding interfaces such that the interconnects connect the contacts of the substrate directly to corresponding pads on the die within the gap. | 08-01-2013 |