Patent application number | Description | Published |
20090233398 | METHODS FOR FORMING PARTICLES FROM SINGLE SOURCE PRECURSORS, METHODS OF FORMING SEMICONDUCTOR DEVICES, AND DEVICES FORMED USING SUCH METHODS - Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode. | 09-17-2009 |
20100206326 | METHODS FOR REMOVING CONTAMINANT MATTER FROM A POROUS MATERIAL - Methods of removing contaminant matter from porous materials include applying a polymer material to a contaminated surface, irradiating the contaminated surface to cause redistribution of contaminant matter, and removing at least a portion of the polymer material from the surface. Systems for decontaminating a contaminated structure comprising porous material include a radiation device configured to emit electromagnetic radiation toward a surface of a structure, and at least one spray device configured to apply a capture material onto the surface of the structure. Polymer materials that can be used in such methods and systems include polyphosphazine-based polymer materials having polyphosphazine backbone segments and side chain groups that include selected functional groups. The selected functional groups may include iminos, oximes, carboxylates, sulfonates, β-diketones, phosphine sulfides, phosphates, phosphites, phosphonates, phosphinates, phosphine oxides, monothio phosphinic acids, and dithio phosphinic acids. | 08-19-2010 |
20100206345 | SYSTEMS AND STRIPPABLE COATINGS FOR DECONTAMINATING STRUCTURES THAT INCLUDE POROUS MATERIAL - Methods of removing contaminant matter from porous materials include applying a polymer material to a contaminated surface, irradiating the contaminated surface to cause redistribution of contaminant matter, and removing at least a portion of the polymer material from the surface. Systems for decontaminating a contaminated structure comprising porous material include a radiation device configured to emit electromagnetic radiation toward a surface of a structure, and at least one spray device configured to apply a capture material onto the surface of the structure. Polymer materials that can be used in such methods and systems include polyphosphazine-based polymer materials having polyphosphazine backbone segments and side chain groups that include selected functional groups. The selected functional groups may include iminos, oximes, carboxylates, sulfonates, β-diketones, phosphine sulfides, phosphates, phosphites, phosphonates, phosphinates, phosphine oxides, monothio phosphinic acids, and dithio phosphinic acids. | 08-19-2010 |
20110152554 | METHODS OF FORMING SINGLE SOURCE PRECURSORS, METHODS OF FORMING POLYMERIC SINGLE SOURCE PRECURSORS, AND SINGLE SOURCE PRECURSORS AND INTERMEDIATE PRODUCTS FORMED BY SUCH METHODS - Methods of forming single source precursors (SSPs) include forming intermediate products having the empirical formula ½{L | 06-23-2011 |
20110204320 | METHODS OF FORMING SEMICONDUCTOR DEVICES AND DEVICES FORMED USING SUCH METHODS - Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode. | 08-25-2011 |
20120192930 | METHODS FOR FORMING PARTICLES, METHODS OF FORMING SEMICONDUCTOR MATERIALS, METHODS OF FORMING SEMICONDUCTOR DEVICES, AND DEVICES FORMED USING SUCH METHODS - Single source precursors or pre-copolymers of single source precursors are subjected to microwave radiation to form particles of a I-III-VI | 08-02-2012 |
20130026535 | FORMATION OF INTEGRAL COMPOSITE PHOTON ABSORBER LAYER USEFUL FOR PHOTOACTIVE DEVICES AND SENSORS - Methods of forming photoactive devices include infiltrating pores of a solid porous ceramic material with a fluid, which may be a supercritical fluid, carrying at least one single source precursor therein. The single source precursor may be decomposed to form a plurality of particles within the pores of the solid porous ceramic material. Photoactive devices include a solid porous ceramic material exhibiting electrical conductivity, and a plurality of photoactive semiconductor particles within pores of the solid porous ceramic material. | 01-31-2013 |
20130060054 | METHODS OF FORMING SINGLE SOURCE PRECURSORS, METHODS OF FORMING POLYMERIC SINGLE SOURCE PRECURSORS, AND SINGLE SOURCE PRECURSORS FORMED BY SUCH METHODS - Methods of forming single source precursors (SSPs) include forming intermediate products having the empirical formula ½{L | 03-07-2013 |
20130200313 | HYBRID PARTICLES AND ASSOCIATED METHODS - Hybrid particles that comprise a coating surrounding a chalcopyrite material, the coating comprising a metal, a semiconductive material, or a polymer; a core comprising a chalcopyrite material and a shell comprising a functionalized chalcopyrite material, the shell enveloping the core; or a reaction product of a chalcopyrite material and at least one of a reagent, heat, and radiation. Methods of forming the hybrid particles are also disclosed. | 08-08-2013 |