Patent application number | Description | Published |
20100087027 | Large Scale Chemical Bath System and Method for Cadmium Sulfide Processing of Thin Film Photovoltaic Materials - A method for forming a thin film photovoltaic material. The method includes providing a plurality of substrates. Each of the substrates has a surface region, an overlying first electrode material, an absorber material including at least a copper species, an indium species, and a selenium species. The method immerses the plurality of substrates in an aqueous solution including an ammonia species, a cadmium species, and a organosulfur (for example, thiourea) species in a bath to form a cadmium sulfide window material having a thickness of less than about 200 Angstroms overlying the absorber material. The aqueous solution is maintained at a temperature ranging from about 50 to about 60 Degrees Celsius. The plurality of substrates having at least the absorber material and the window layer are removed from the aqueous solution. The aqueous solution is further subjected to a filter process to substantially remove one or more particles greater than about 5 microns. | 04-08-2010 |
20100258179 | THIN FILM SODIUM SPECIES BARRIER METHOD AND STRUCTURE FOR CIGS BASED THIN FILM PHOTOVOLTAIC CELL - A method for fabricating a thin film solar cell includes providing a soda lime glass substrate comprising a surface region and a concentration of sodium oxide of greater than about 10 wt % and treating the surface region with one or more cleaning process, using a deionized water rinse, to remove surface contaminants having a particles size of greater than three microns. The method also includes forming a barrier layer overlying the surface region, forming a first molybdenum layer in tensile configuration overlying the barrier layer, and forming a second molybdenum layer in compressive configuration using a second process overlying the first molybdenum layer. Additionally, the method includes patterning the first molybdenum layer and the second molybdenum layer to form a lower electrode layer and forming a layer of photovoltaic material overlying the lower electrode layer. Moreover, the method includes forming a first zinc oxide layer overlying the layer of photovoltaic materials. | 10-14-2010 |
20100261307 | PATTERNING ELECTRODE MATERIALS FREE FROM BERM STRUCTURES FOR THIN FILM PHOTOVOLTAIC CELLS - A method for forming a thin film photovoltaic device having patterned electrode films includes providing a soda lime glass substrate with an overlying lower electrode layer comprising a molybdenum material. The method further includes subjecting the lower electrode layer with one or more pulses of electromagnetic radiation from a laser source to ablate one or more patterns associated with one or more berm structures from the lower electrode layer. Furthermore, the method includes processing the lower electrode layer comprising the one or more patterns using a mechanical brush device to remove the one or more berm structures followed by treating the lower electrode layer comprising the one or more patterns free from the one or more berm structures. The method further includes forming a layer of photovoltaic material overlying the lower electrode layer and forming a first zinc oxide layer overlying the layer of photovoltaic material. | 10-14-2010 |
20110018103 | SYSTEM AND METHOD FOR TRANSFERRING SUBSTRATES IN LARGE SCALE PROCESSING OF CIGS AND/OR CIS DEVICES - According to an embodiment, the present invention provide method for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure, each of the substrate including a peripheral region, the peripheral region including a plurality of openings, the plurality of openings including at least a first opening and a second opening. The also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5, the furnace including a holding apparatus, the holding apparatus including a first elongated member being configured to hang each of the substrates using at least the first opening. The method further includes introducing a gaseous species including a hydrogen species and a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350° C. to about 450° C. to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates. | 01-27-2011 |
20110020959 | HUMIDITY CONTROL AND METHOD FOR THIN FILM PHOTOVOLTAIC MATERIALS - A method for processing a thin film photovoltaic module. The method includes providing a plurality of substrates, each of the substrates having a first electrode layer and an overlying absorber layer composed of copper indium gallium selenide (CIGS) or copper indium selenide (CIS) material. The absorber material comprises a plurality of sodium bearing species. The method maintains the plurality of substrates in a controlled environment after formation of at least the absorber layer through one or more processes up to a lamination process. The controlled environment has a relative humidity of less than 10% and a temperature ranging from about 10 Degrees Celsius to about 40 Degrees Celsius. The method subjects the plurality of substrates to a liquid comprising water at a temperature from about 10 Degrees Celsius to about 80 Degrees Celsius to process the plurality of substrates after formation of the absorber layer. The plurality of substrates having the absorber layer is subjected to an environment having a relative humidity of greater than about 10% to a time period of less then four hours. | 01-27-2011 |
20110020977 | Mechanical patterning of thin film photovoltaic materials and structure - A method for forming one or more patterns for a thin film photovoltaic material. The method includes providing a substrate including a molybdenum layer and an overlying absorber comprising a copper bearing species and a window layer comprising a cadmium bearing species. The substrate is supported to expose a surface of the window layer. In a specific embodiment, the method includes using a scribe device. The scribe device includes a scribe having a tip. The scribe device is configured to pivot about one or more regions and configured to apply pressure to the tip, such that the tip is placed on a selected region of the window layer or the absorber layer. The method moves the scribe device relative to the substrate in a direction to form a pattern on at least the window layer or the absorber layer at a determined speed maintaining the molybdenum layer free from the pattern. | 01-27-2011 |
20110020978 | SODIUM DOPING METHOD AND SYSTEM OF CIGS BASED MATERIALS USING LARGE SCALE BATCH PROCESSING - A method of processing a plurality of photovoltaic materials in a batch process includes providing at least one transparent substrate having an overlying first electrode layer and an overlying copper species based absorber precursor layer within an internal region of a furnace. The overlying copper species based absorber precursor layer has an exposed face. The method further includes disposing at least one soda lime glass comprising a soda lime glass face within the internal region of the furnace such that the soda lime glass face is adjacent by a spacing to the exposed face of the at least one transparent substrate. Furthermore, the method includes subjecting the at least one transparent substrate and the one soda lime glass to thermal energy to transfer one or more sodium bearing species from the soda lime glass face across the spacing into the copper species based absorber precursor layer via the exposed face. | 01-27-2011 |
20110020980 | THERMAL PRE-TREATMENT PROCESS FOR SODA LIME GLASS SUBSTRATE FOR THIN FILM PHOTOVOLTAIC MATERIALS - A method for fabricating a thin film solar cell includes providing a soda lime glass substrate comprising a surface region, treating the surface region with one or more cleaning process including an aqueous solution to remove one or more contaminants and/or particulates, and forming a lower electrode layer overlying the surface region. The method also includes performing a thermal treatment process to remove any residual water species to substantially less than a monolayer of water species from the lower electrode layer and soda lime glass substrate. The thermal treatment process changes a temperature of the soda lime glass substrate from a first temperature to a second temperature to pre-heat the soda lime glass substrate. Additionally, the method includes transferring the soda lime glass substrate, which has been preheated, to a deposition chamber and forming a layer of photovoltaic material overlying the lower electrode layer within the deposition chamber. | 01-27-2011 |
20110070682 | THERMAL MANAGEMENT AND METHOD FOR LARGE SCALE PROCESSING OF CIS AND/OR CIGS BASED THIN FILMS OVERLYING GLASS SUBSTRATES - The thermal management and method for large scale processing of CIS and/or CIGS based thin film overlaying glass substrates. According to an embodiment, the present invention provides a method for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure. The method also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5. The method further includes introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350° C. to about 450° C. to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates. | 03-24-2011 |
20110070683 | THERMAL MANAGEMENT AND METHOD FOR LARGE SCALE PROCESSING OF CIS AND/OR CIGS BASED THIN FILMS OVERLYING GLASS SUBSTRATES - The thermal management and method for large scale processing of CIS and/or CIGS based thin film overlaying glass substrates. According to an embodiment, the present invention provides a method for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure. The method also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5. The method further includes introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350° C. to about 450° C. to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates. | 03-24-2011 |
20110070684 | THERMAL MANAGEMENT AND METHOD FOR LARGE SCALE PROCESSING OF CIS AND/OR CIGS BASED THIN FILMS OVERLYING GLASS SUBSTRATES - The thermal management and method for large scale processing of CIS and/or CIGS based thin film overlaying glass substrates. According to an embodiment, the present invention provides a method for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure. The method also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5. The method further includes introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350° C. to about 450° C. to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates. | 03-24-2011 |
20110070685 | THERMAL MANAGEMENT AND METHOD FOR LARGE SCALE PROCESSING OF CIS AND/OR CIGS BASED THIN FILMS OVERLYING GLASS SUBSTRATES - The thermal management and method for large scale processing of CIS and/or CIGS based thin film overlaying glass substrates. According to an embodiment, the present invention provides a method for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure. The method also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5. The method further includes introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350° C. to about 450° C. to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates. | 03-24-2011 |
20110070686 | THERMAL MANAGEMENT AND METHOD FOR LARGE SCALE PROCESSING OF CIS AND/OR CIGS BASED THIN FILMS OVERLYING GLASS SUBSTRATES - The thermal management and method for large scale processing of CIS and/or CIGS based thin film overlaying glass substrates. According to an embodiment, the present invention provides a method for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure. The method also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5. The method further includes introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350° C. to about 450° C. to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates. | 03-24-2011 |
20110070687 | THERMAL MANAGEMENT AND METHOD FOR LARGE SCALE PROCESSING OF CIS AND/OR CIGS BASED THIN FILMS OVERLYING GLASS SUBSTRATES - The thermal management and method for large scale processing of CIS and/or CIGS based thin film overlaying glass substrates. According to an embodiment, the present invention provides a method for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure. The method also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5. The method further includes introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350° C. to about 450° C. to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates. | 03-24-2011 |
20110070688 | THERMAL MANAGEMENT AND METHOD FOR LARGE SCALE PROCESSING OF CIS AND/OR CIGS BASED THIN FILMS OVERLYING GLASS SUBSTRATES - The thermal management and method for large scale processing of CIS and/or CIGS based thin film overlaying glass substrates. According to an embodiment, the present invention provides a method for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure. The method also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5. The method further includes introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350° C. to about 450° C. to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates. | 03-24-2011 |
20110070689 | THERMAL MANAGEMENT AND METHOD FOR LARGE SCALE PROCESSING OF CIS AND/OR CIGS BASED THIN FILMS OVERLYING GLASS SUBSTRATES - The thermal management and method for large scale processing of CIS and/or CIGS based thin film overlaying glass substrates. According to an embodiment, the present invention provides a method for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure. The method also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5. The method further includes introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350° C. to about 450° C. to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates. | 03-24-2011 |
20110070690 | THERMAL MANAGEMENT AND METHOD FOR LARGE SCALE PROCESSING OF CIS AND/OR CIGS BASED THIN FILMS OVERLYING GLASS SUBSTRATES - The thermal management and method for large scale processing of CIS and/or CIGS based thin film overlaying glass substrates. According to an embodiment, the present invention provides a method for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure. The method also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5. The method further includes introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350° C. to about 450° C. to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates. | 03-24-2011 |
20110073181 | PATTERNING ELECTRODE MATERIALS FREE FROM BERM STRUCTURES FOR THIN FILM PHOTOVOLTAIC CELLS - A method for forming a thin film photovoltaic device having patterned electrode films includes providing a soda lime glass substrate with an overlying lower electrode layer comprising a molybdenum material. The method further includes subjecting the lower electrode layer with one or more pulses of electromagnetic radiation from a laser source to ablate one or more patterns associated with one or more berm structures from the lower electrode layer. Furthermore, the method includes processing the lower electrode layer comprising the one or more patterns using a mechanical brush device to remove the one or more berm structures followed by treating the lower electrode layer comprising the one or more patterns free from the one or more berm structures. The method further includes forming a layer of photovoltaic material overlying the lower electrode layer and forming a first zinc oxide layer overlying the layer of photovoltaic material. | 03-31-2011 |
20110212565 | Humidity Control and Method for Thin Film Photovoltaic Materials - A method for processing a thin film photovoltaic module. The method includes providing a plurality of substrates, each of the substrates having a first electrode layer and an overlying absorber layer composed of copper indium gallium selenide (CIGS)or copper indium selenide (CIS) material. The absorber material comprises a plurality of sodium bearing species. The method maintains the plurality of substrates in a controlled environment after formation of at least the absorber layer through one or more processes up to a lamination process. The controlled environment has a relative humidity of less than 10% and a temperature ranging from about 10 degrees Celsius to about 40 degrees Celsius. The method subjects the plurality of substrates to a liquid comprising water at a temperature from about 10 degrees Celsius to about 80 degrees Celsius to process the plurality of substrates after formation of the absorber layer. The plurality of substrates having the absorber layer is subjected to an environment having a relative humidity of greater than about 10% to a time period of less then four hours. | 09-01-2011 |
20110223745 | SELF CLEANING LARGE SCALE METHOD AND FURNACE SYSTEM FOR SELENIZATION OF THIN FILM PHOTOVOLTAIC MATERIALS - According to an embodiment, the present invention provide a method for fabricating a copper indium diselenide semiconductor film using a self cleaning furnace. The method includes transferring a plurality of substrates into a furnace, the furnace comprising a processing region and at least one end cap region disengageably coupled to the processing region, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5, each of the substrates having a copper and indium composite structure. The method also includes introducing a gaseous species including a hydrogen species and a selenium species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350 Degrees Celsius to about 450 Degrees Celsius to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates. The method further includes decomposing residual selenide species from an inner region of the process region of the furnace. The method further includes depositing elemental selenium species within a vicinity of the end cap region operable at a third temperature. Also, the method includes maintaining the inner region substantially free from elemental selenium species by at least the decomposition of residual selenide species from the inner region of the process region. | 09-15-2011 |
20110229989 | LARGE SCALE METHOD AND FURNACE SYSTEM FOR SELENIZATION OF THIN FILM PHOTOVOLTAIC MATERIALS - A method for fabricating a copper indium diselenide semiconductor film is provided using substrates having a copper and indium composite structure. The substrates are placed vertically in a furnace and a gas including a selenide species and a carrier gas are introduced. The temperature is increased from about 350° C. to about 450° C. to initiate formation of a copper indium diselenide film from the copper and indium composite on the substrates. | 09-22-2011 |
20110263064 | ZINC OXIDE FILM METHOD AND STRUCTURE FOR CIGS CELL - A method for fabricating a thin film photovoltaic device. The method includes providing a substrate comprising an absorber layer and an overlying window layer. The substrate is loaded into a chamber and subjected to a vacuum environment. The vacuum environment is at a pressure ranging from 0.1 Torr to about 0.02 Torr. In a specific embodiment, a mixture of reactant species derived from diethylzinc species, water species and a carrier gas is introduced into the chamber. The method further introduces a diborane species using a selected flow rate into the mixture of reactant species. A zinc oxide film is formed overlying the window layer to define a transparent conductive oxide using the selected flow rate to provide a resistivity of about 2.5 milliohm-cm and less and an average grain size of about 3000 to 5000 Angstroms | 10-27-2011 |
20120094432 | SELF CLEANING LARGE SCALE METHOD AND FURNACE SYSTEM FOR SELENIZATION OF THIN FILM PHOTOVOLTAIC MATERIALS - A method for fabricating a copper indium diselenide semiconductor film using a self cleaning furnace is provided. The method includes transferring a plurality of substrates having a copper and indium composite structure into a furnace comprising a processing region and at least one end cap region disengageably coupled to the processing region. The method also includes introducing a gaseous species including a hydrogen species and a selenium species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature to initiate formation of a copper indium diselenide film on each of the substrates. The method further includes decomposing residual selenide species from an inner region of the process region of the furnace. The method further includes depositing elemental selenium species within a vicinity of the end cap region operable at a third temperature. | 04-19-2012 |
20120122304 | System and Method for Transferring Substrates in Large Scale Processing of CIGS and/or CIS Devices - The present invention provides methods for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates having a copper and indium composite structure, and including a peripheral region, the peripheral region including a plurality of openings, the plurality of openings including at least a first opening and a second opening. The method includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the furnace including a holding apparatus. The method further includes introducing a gaseous species into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature to at least initiate formation of a copper indium diselenide film on each of the substrates. | 05-17-2012 |
20120122321 | THERMAL MANAGEMENT AND METHOD FOR LARGE SCALE PROCESSING OF CIS AND/OR CIGS BASED THIN FILMS OVERLYING GLASS SUBSTRATES - thermal management for large scale processing of CIS and/or CIGS based thin film is described. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure. The method also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5. The method further includes introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, to at least initiate formation of a copper indium diselenide film. | 05-17-2012 |
20140170808 | ZINC OXIDE FILM METHOD AND STRUCTURE FOR CIGS CELL - A method for fabricating a thin film photovoltaic device. The method includes providing a substrate comprising an absorber layer and an overlying window layer. The substrate is loaded into a chamber and subjected to a vacuum environment. The vacuum environment is at a pressure ranging from 0.1 Torr to about 0.02 Torr. In a specific embodiment, a mixture of reactant species derived from diethylzinc species, water species and a carrier gas is introduced into the chamber. The method further introduces a diborane species using a selected flow rate into the mixture of reactant species. A zinc oxide film is formed overlying the window layer to define a transparent conductive oxide using the selected flow rate to provide a resistivity of about 2.5 milliohm-cm and less and an average grain size of about 3000 to 5000 Angstroms | 06-19-2014 |
20140287551 | THERMAL PRE-TREATMENT PROCESS FOR SODA LIME GLASS SUBSTRATE FOR THIN FILM PHOTOVOLTAIC MATERIALS - A method for fabricating a thin film solar cell includes providing a soda lime glass substrate comprising a surface region, treating the surface region with one or more cleaning process including an aqueous solution to remove one or more contaminants and/or particulates, and forming a lower electrode layer overlying the surface region. The method also includes performing a thermal treatment process to remove any residual water species to substantially less than a monolayer of water species from the lower electrode layer and soda lime glass substrate. The thermal treatment process changes a temperature of the soda lime glass substrate from a first temperature to a second temperature to pre-heat the soda lime glass substrate. Additionally, the method includes transferring the soda lime glass substrate, which has been preheated, to a deposition chamber and forming a layer of photovoltaic material overlying the lower electrode layer within the deposition chamber. | 09-25-2014 |