| Patent application number | Description | Published |
|---|
| 20080205130 | MRAM FREE LAYER SYNTHETIC ANTIFERROMAGNET STRUCTURE AND METHODS - A magnetic tunnel junction (MTJ) structure for use with toggle MRAM devices and the like includes a tunnel barrier layer and a synthetic antiferromagnet (SAF) structure formed on the tunnel barrier layer, wherein the SAF includes a plurality (e.g., three or more) ferromagnetic layers antiferromagnetically or ferromagnetically coupled by a plurality of respective coupling layers. The bottom ferromagnetic layer adjacent the tunnel barrier layer has a high spin polarization and a high intrinsic anisotropy field (H | 08-28-2008 |
| 20080258247 | SPIN-TRANSFER MRAM STRUCTURE AND METHODS - A spin-transfer MRAM bit includes a free magnet layer positioned between a pair of spin polarizers, wherein at least one of the spin polarizers comprises an unpinned synthetic antiferromagnet (SAF). The SAF may include two antiparallel fixed magnet layers separated by a coupling layer. To improve manufacturability, the layers of the SAF may be non-symmetrical (e.g., having different thicknesses or different inherent anisotropies) to assist in achieving proper alignment during anneal. The total magnetic moment of the SAF may be greater than that of the free magnet layer. | 10-23-2008 |
| 20090085058 | ELECTRONIC DEVICE INCLUDING A MAGNETO-RESISTIVE MEMORY DEVICE AND A PROCESS FOR FORMING THE ELECTRONIC DEVICE - A process of forming an electronic device can include forming a stack including a tunnel barrier layer. The tunnel barrier layer can have a ratio of the metal atoms to oxygen atoms of greater than a stoichiometric ratio, wherein the ratio has a particular value. The process can also include forming a gettering layer having a composition capable of gettering oxygen, and depositing an insulating layer over the gettering layer. The process can further include exposing the insulating layer to a temperature of at least approximately 60° C. In one embodiment, after such exposure, a portion of the gettering layer is converted to an insulating material. In another embodiment, an electronic device can include a magnetic tunnel junction and an adjacent insulating layer lying within an opening in another insulating layer. | 04-02-2009 |
| 20090096042 | MAGNETIC ELEMENT HAVING REDUCED CURRENT DENSITY - A memory device includes a fixed magnetic layer, a tunnel barrier layer over the fixed magnetic layer, and a free magnetic structure formed over the tunnel barrier layer, wherein the free magnetic structure has layers or sub-layers that are weakly magnetically coupled. Thus, a low programming voltage can be used to avoid tunnel barrier breakdown, and a small pass transistor can be used to save die real estate. | 04-16-2009 |
| 20100148167 | MAGNETIC TUNNEL JUNCTION STACK - A magnetic tunnel junction ( | 06-17-2010 |
| 20100197043 | STRUCTURE AND METHOD FOR FABRICATING CLADDED CONDUCTIVE LINES IN MAGNETIC MEMORIES - A method of forming a magnetoelectronic device includes forming a dielectric material ( | 08-05-2010 |
| 20100277971 | METHOD FOR REDUCING CURRENT DENSITY IN A MAGNETOELECTRONIC DEVICE - A method for reducing spin-torque current density needed to switch a magnetoelectronic device ( | 11-04-2010 |
| 20110062538 | MAGNETIC ELEMENT HAVING REDUCED CURRENT DENSITY - A memory device includes a fixed magnetic layer, a tunnel barrier layer over the fixed magnetic layer, and a free magnetic structure formed over the tunnel barrier layer, wherein the free magnetic structure has layers or sub-layers that are weakly magnetically coupled. Thus, a low programming voltage can be used to avoid tunnel barrier breakdown, and a small pass transistor can be used to save die real estate. | 03-17-2011 |
