Patent application number | Description | Published |
20080234918 | KNOCKING STATE DETERMINATION DEVICE - An engine ECU executes a program including the steps of: calculating a correlation coefficient K based on the result of comparing a vibration waveform of an engine and a knock waveform model stored previously; calculating a magnitude value LOG(V) from the magnitude V detected based on a signal transmitted from a knock sensor; creating frequency distribution of magnitude values LOG(V) by using magnitude values LOG(V) in an ignition cycle in which the correlation coefficient K larger than a threshold K( | 09-25-2008 |
20080264150 | INTERNAL COMBUSTION ENGINE KNOCK DETERMINATION DEVICE - An engine ECU executes a program including the steps of: detecting a vibration corresponding to a first radial resonance mode by using a band-pass filter, from vibrations sensed by an in-cylinder pressure sensor provided at an upper central portion of the cylinder; calculating knock intensity N based on a result of comparison between the detected waveform and a knock waveform model prepared in advance as a vibration waveform when knocking occurs; determining that knocking occurred when the knock intensity N is larger than a predetermined reference value; and determining that knocking has not occurred when the knock intensity N is not larger than the predetermined reference value. | 10-30-2008 |
20080306677 | KNOCKING STATE DETERMINATION DEVICE - An engine ECU executes a program including a step of calculating intensity values LOG(V) based on signals transmitted from a knock sensor; a step of deciding a maximum value V(MAX) in frequency distribution of intensity values LOG(V) for N cycles (N is a natural number); a step of calculating a knock determination level V(KD) based on the frequency distribution; a step of, when the knock determination level V(KD) is smaller than the maximum value V(MAX), removing V(MAX) from the frequency distribution; and a step of counting the total frequency of removed maximum values V(MAX) as knock occupancy KC. Maximum values V(MAX) are removed until the knock determination level V(KD) and the maximum value V(MAX) coincide, and the knock determination level V(KD) is recalculated. | 12-11-2008 |
20090120410 | IGNITION TIMING CONTROLLING APPARATUS AND IGNITION TIMING CONTROLLING METHOD FOR INTERNAL COMBUSTION ENGINE - A 90° integrated value calculating unit of an engine ECU calculates a 90° integrated value obtained by integrating a magnitude. A calculating unit calculates a knock magnitude by dividing 90° integrated value by a BGL. A value obtained by subtracting a standard deviation σ from a median value of 90° integrated value is determined as the BGL. An ignition timing control unit controls the ignition timing depending on whether knock magnitude is equal to or larger than a determination value. A median value calculating unit calculates median value of 90° integrated value. A standard deviation calculating unit calculates standard deviation of 90° integrated value. A first stop unit stops updating of median value and standard deviation when 90° integrated value is smaller than a first threshold value or is equal to or larger than a second threshold value. | 05-14-2009 |
20090217908 | IGNITION TIMING CONTROLLING APPARATUS AND IGNITION TIMING CONTROLLING METHOD FOR INTERNAL COMBUSTION ENGINE - An engine ECU executes a program including the steps of: calculating a knock magnitude N by dividing an integrated value lpkknk obtained by integrating the magnitude of vibration in the knock detection gate by BGL; controlling ignition timing according to a result of comparison between knock magnitude N and a determination value VJ; stopping updating of a standard deviation σ when it is determined that determination value VJ to be compared with knock magnitude N is to be changed; updating a median value VM by increasing an update amount of median value VM; and updating BGL according to median value VM and standard deviation σ. | 09-03-2009 |
20110257872 | KNOCK DETERMINING DEVICE - An output signal of a knock sensor is filtered with a plurality of band-pass filters to extract vibration waveform components of a plurality of frequency bands (f | 10-20-2011 |
Patent application number | Description | Published |
20110257865 | IGNITION TIMING CONTROLLER OF INTERNAL COMBUSTION ENGINE - The apparatus of the present invention corrects a control target value of ignition timing using a multipoint learned value AGdp(n) for compensating for a change amount of the ignition timing caused by time-dependent change of the engine and a basic learned value AG(i) for compensating for a change amount of the ignition timing caused by a factor other than the aforementioned time-dependent change of the engine. In a multipoint learning range n in which the time-dependent change of the engine influences the ignition timing to a great extent, the control target is corrected using the multipoint learned value AGdp(n) and the basic learned value AG(i). In ranges other than the multipoint learning range n, the control target is corrected using only the basic learned value AG(i). Normally, only the learning of the multipoint learned value AGdp(n) is permitted in the multipoint learning range n, and only the learning of the basic learned value AG(i) is permitted in the ranges other than the multipoint learning range n. When it is determined that there is a possibility that fuel has been fed to a fuel tank, the learning of the multipoint learned value AGdp(n) is prohibited for a subsequent predetermined period (if NO in step S | 10-20-2011 |
20130174811 | FUEL SUPPLY DEVICE FOR INTERNAL COMBUSTION ENGINE - A temperature reduction control for reducing the temperature of an injector is performed through first to third fuel supply control routines executed by an electronic control device. When the temperature of the injector is reduced by the execution of the temperature reduction control, heat transfer to the vicinity of the nozzle of the injector is reduced. Since the vicinity of the nozzle of the injector is less likely to be placed in a high-temperature environment by in accordance with reduction in heat transfer to the vicinity of the nozzle of the injector, the formation of deposit around the nozzle of the injector is suppressed. | 07-11-2013 |
20150377172 | FUEL INJECTION SYSTEM FOR INTERNAL COMBUSTION ENGINE AND CONTROL METHOD FOR INTERNAL COMBUSTION ENGINE - A fuel injection system for an engine, the fuel injection system includes injectors and an electronic control unit. The injectors include needle valves; and the ECU is configured to: (i) execute partial lift injection and full lift injection with the injectors, the partial lift injection being injection during which the needle valve does not reach a fully-open state and the full lift injection being injection during which the needle valve reaches the fully-open state; (ii) operate the engine in a partial lift injection region where the injection of a required injection amount of a fuel is shared by the partial lift injection and the full lift injection; and (iii) perform the amount of correction of the required injection amount with respect to the injection amount shared by the full lift injection when the required injection amount is corrected while the engine is operated in the partial lift injection region. | 12-31-2015 |
20160108847 | CONTROL APPARATUS FOR FUEL INJECTION VALVE AND MEHOD THEREOF - An electronic control unit that calculates an injection standby period, which is a period from an energization start point of the solenoid to a point at which the fuel injection valve opens, and adjusts an energization period of the solenoid in accordance with the calculated injection standby period. The electronic control unit of the control apparatus for a fuel injection valve then measures a reference fall detection period, which is a period from the energization start point to a reference fall detection point, and sets the injection standby period to be longer as the reference fall detection period is longer. Here, the reference fall detection point is a point at which the excitation current detected by the current detection circuit falls below a reference current value, which is smaller than a peak current value, while the excitation current decreases after reaching the peak current value. | 04-21-2016 |
Patent application number | Description | Published |
20140097510 | PHOTODIODE AND METHOD FOR PRODUCING THE SAME, PHOTODIODE ARRAY, SPECTROPHOTOMETER AND SOLID-STATE IMAGING DEVICE - Provided is a photodiode having a high-concentration layer on its surface, in which the high-concentration layer is formed so that the thickness of a non-depleted region is larger than the roughness of an interface between silicon and an insulator layer, and is smaller than a penetration depth of ultraviolet light. | 04-10-2014 |
20140306344 | WIRING STRUCTURE, SEMICONDUCTOR DEVICE INCLUDING WIRING STRUCTURE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - There is provided with a wiring structure. The wiring stracture has a damascene wiring structure including a metal wiring. The metal wiring is provided in direct contact with an upper surface of a barrier film (SiC(O, N) film) containing silicon (Si), carbon (C), and at least one of oxygen (O) and nitrogen (N) as constituent components. | 10-16-2014 |
20150048239 | PHOTODIODE ARRAY FOR SPECTROMETRIC MEASUREMENTS AND SPECTROMETRIC MEASUREMENT SYSTEM - A plurality of photodiodes arrayed in a one-dimensional form are divided into a plurality of groups. The structure of an antireflection coating is changed for each group so that all the surfaces of the photodiodes belonging to each group are covered with an antireflection coating having a transmittance characteristic which shows a maximum transmittance within a range of wavelengths of light to be received by those photodiodes. In particular, a SiO | 02-19-2015 |
20150296160 | LINEAR IMAGE SENSOR AND DRIVING METHOD THEREFOR - A logical gate circuit ( | 10-15-2015 |
20160076939 | PHOTODIODE AND METHOD FOR PRODUCING THE SAME, PHOTODIODE ARRAY, SPECTROPHOTOMETER AND SOLID-STATE IMAGING DEVICE - Provided is a photodiode having a high-concentration layer on its surface, in which the high-concentration layer is formed so that the thickness of a non-depleted region is larger than the roughness of an interface between silicon and an insulation film layer, and is smaller than a penetration depth of ultraviolet light. | 03-17-2016 |
Patent application number | Description | Published |
20090309138 | Transistor and semiconductor device - An accumulation mode transistor has an impurity concentration of a semiconductor layer in a channel region at a value higher than 2×10 | 12-17-2009 |
20100059830 | Semiconductor device - In a semiconductor device, the degree of flatness of 0.3 nm or less in terms of a peak-to-valley (P-V) value is realized by rinsing a silicon surface with hydrogen-added ultrapure water in a light-screened state and in a nitrogen atmosphere and a contact resistance of 10 | 03-11-2010 |
20100213516 | SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE - On a surface of a semiconductor substrate, a plurality of terraces formed stepwise by an atomic step are formed in the substantially same direction. Using the semiconductor substrate, a MOS transistor is formed so that no step exists in a carrier traveling direction (source-drain direction). | 08-26-2010 |
20110042725 | SEMICONDUCTOR DEVICE - With inversion-mode transistors, intrinsic-mode transistors, or semiconductor-layer accumulation-layer current controlled accumulation-mode transistors, variation in threshold voltages becomes large in miniaturized generations due to statistical variation in impurity atom concentrations and thus it is difficult to maintain the reliability of an LSI. Provided is a bulk current controlled accumulation-mode transistor which is formed by controlling the thickness and the impurity atom concentration of a semiconductor layer so that the thickness of a depletion layer becomes greater than that of the semiconductor layer. For example, by setting the thickness of the semiconductor layer to 100 nm and setting the impurity concentration thereof to be higher than 2×10 | 02-24-2011 |
20120146102 | TRANSISTOR AND SEMICONDUCTOR DEVICE - An accumulation mode transistor has an impurity concentration of a semiconductor layer in a channel region at a value higher than 2×10 | 06-14-2012 |
20140312399 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A gate insulating film of a conventional semiconductor device is subjected to dielectric breakdown at a low electric field strength and thus its service life is short. This is because since the size of the asperity of at least one of a semiconductor layer-side interface and an electrode-side interface is large and, an electric field applied to the gate insulating film is locally concentrated and has a variation in its strength. This problem is solved by specifying the sizes of the asperities of both interfaces of the gate insulating film. | 10-23-2014 |
Patent application number | Description | Published |
20100072467 | SEMICONDUCTOR DEVICE - A display device includes a pixel portion in which a pixel is arranged in a matrix, the pixel including an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen and having a channel protective layer over a semiconductor layer to be a channel formation region overlapping a gate electrode layer and a pixel electrode layer electrically connected to the inverted staggered thin film transistor. In the periphery of the pixel portion in this display device, a pad portion including a conductive layer made of the same material as the pixel electrode layer is provided. In addition, the conductive layer is electrically connected to a common electrode layer formed on a counter substrate. | 03-25-2010 |
20100072468 | DISPLAY DEVICE - A display device includes a pixel portion in which a pixel electrode layer is arranged in a matrix, and an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen is provided corresponding to the pixel electrode layer. In the periphery of the pixel portion in this display device, a pad portion is provided to be electrically connected to a common electrode layer formed on a counter substrate through a conductive layer made of the same material as the pixel electrode layer. One objection of our invention to prevent a defect due to separation of a thin film in various kinds of display devices is realized, by providing a structure suitable for a pad portion provided in a display panel. | 03-25-2010 |
20100072469 | DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME - To provide a structure suitable for a common connection portion provided in a display panel. A common connection portion provided in an outer region of a pixel portion has a stacked structure of an insulating layer formed using the same layer as a gate insulating layer, an oxide semiconductor layer formed using the same layer as a second oxide semiconductor layer, and a conductive layer (also referred to as a common potential line) formed using the same layer as the conductive layer, in which the conductive layer (also referred to as the common potential line) is connected to a common electrode through an opening in an interlayer insulating layer provided over the first oxide semiconductor layer and an electrode opposite to a pixel electrode is electrically connected to the common electrode through conductive particles. | 03-25-2010 |
20110133183 | DISPLAY DEVICE - A display device includes a pixel portion in which a pixel electrode layer is arranged in a matrix, and an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen is provided corresponding to the pixel electrode layer. In the periphery of the pixel portion in this display device, a pad portion is provided to be electrically connected to a common electrode layer formed on a counter substrate through a conductive layer made of the same material as the pixel electrode layer. One objection of our invention to prevent a defect due to separation of a thin film in various kinds of display devices is realized, by providing a structure suitable for a pad portion provided in a display panel. | 06-09-2011 |