Patent application number | Description | Published |
20080266524 | Autostereoscopic projection system - The invention relates to an autostereoscopic projection arrangement, comprising at least one projector ( | 10-30-2008 |
20080266525 | Autostereoscopic projection system - The invention relates to an autostereoscopic projection arrangement, comprising at least one projector ( | 10-30-2008 |
20120140182 | Autostereoscopic Projection System - An autostereoscopic projection arrangement, comprising at least one projector and at least one filter array, in which arrangement bits of partial information from views of a scene or object are projected by the projector/projectors onto a projection screen, where these bits of partial information are rendered on image rendering elements and, having passed one or several of the filter arrays are made visible to at least one observer, and in which, as regards the propagation direction of the bits of partial information, the image rendering elements correspond with correlated filter elements in such a way that an observer will see predominantly bits of partial information from a first selection of views with one eye and predominantly bits of partial information from a second selection of views with the other eye, and thus will have a spatial impression. | 06-07-2012 |
Patent application number | Description | Published |
20100186590 | ABSORPTION MEDIUM FOR REMOVING ACID GASES WHICH COMPRISES AMINO ACID AND ACID PROMOTER - An absorption medium for removing acid gases from a fluid stream comprises an aqueous solution of a) of at least one metal salt of an aminocarboxylic acid, and b) of at least one acid promoter, wherein the molar ratio of b) to a) is in the range from 0.0005 to 1.0. The acid promoter is selected from mineral acids, carboxylic acids, sulfonic acids, organic phosphonic acids and partial esters thereof. The absorption medium, compared with absorption media based on amino acid salts, has a reduced regeneration energy requirement without significantly reducing the absorption capacity of the solution for acid gases. In a process for removing acid gases from the fluid stream, the fluid stream is brought into contact with the absorption medium. | 07-29-2010 |
20100288125 | ABSORPTION MEDIUM FOR THE SELECTIVE REMOVAL OF HYDROGEN SULFIDE FROM FLUID STREAMS - An absorption medium for the removal of acid gases from a fluid stream comprises an aqueous solution a) of at least one amine and b) at least one phosphonic acid, wherein the molar ratio of b) to a) is in the range from 0.0005 to 1.0. The phosphonic acid is, e.g., 1-hydroxyethane-1,1-diphosphonic acid. The absorption medium exhibits a reduced regeneration energy requirement compared with absorption media based on amines or amine/promoter combinations, without significantly decreasing the absorption capacity of the solution for acid gases. | 11-18-2010 |
20110033354 | ABSORPTION MEDIUM FOR REMOVING ACID GASES FROM A FLUID STREAM - An absorption medium for removing acid gases from a fluid stream comprises an aqueous solution (A) of an alkali metal salt of an N,N-di-C | 02-10-2011 |
20130211171 | METHOD FOR REMOVING ACID GASES FROM HYDROCARBON-COMPRISING FLUIDS - In a method for removing acid gases from hydrocarbon-comprising fluids, (a) a carbon dioxide-rich acid gas stream is separated off from the fluid by scrubbing with a liquid absorbent, (b) the fluid is contacted with a solid adsorbent for removing sulfur-comprising acid gases, and (c) the loaded solid adsorbent is regenerated by contacting with at least one purge gas under regeneration conditions. A carbon dioxide-rich acid gas stream separated off in step (a) is used as purge gas. | 08-15-2013 |
20130230440 | REMOVING ACID GASES FROM WATER VAPOUR-CONTAINING FLUID STREAMS - A process for removing acid gases from a water vapour-containing fluid stream comprises a) providing an absorption liquid which is incompletely miscible with water; b) treating the fluid stream in an absorption zone with the absorption liquid to obtain an acid gas-depleted treated fluid stream and an acid gas-loaded absorption liquid; c) directing the treated fluid stream to a rehydration zone and treating the fluid stream with an aqueous liquid to volatilize at least part of the aqueous liquid; d) regenerating the loaded absorption liquid to expel the acid gases at least in part and obtain a regenerated absorption liquid, and directing the regenerated absorption liquid to step b); and e) separating, from the absorption liquid, an aqueous liquid that has condensed in the absorption zone, and directing the aqueous liquid to step c). The process allows for an efficient removal of water accumulated in the absorption liquid system. | 09-05-2013 |
20130259789 | REMOVING SULPHUR OXIDES FROM A FLUID STREAM - A process for removing sulphur oxides from a fluid stream, such as flue gas, that comprises a) providing a non-aqueous absorption liquid containing at least one hydrophobic amine, the non-aqueous absorption liquid being incompletely miscible with water: b) treating the fluid stream in an absorption zone with the non-aqueous absorption liquid to transfer at least part of the sulphur oxides into the non-aqueous absorption liquid and to form a sulphur oxide-hydrophobic amine-complex: c) causing the non-aqueous absorption liquid to be in liquid-liquid contact with an aqueous liquid whereby at least part of the sulphur oxide-hydrophobic amine-complex is hydrolyzed to release the hydrophobic amine and sulphurous hydrolysis products, and at least part of the sulphurous hydrolysis products is transferred into the aqueous liquid; d) separating the aqueous liquid from the non-aqueous absorption liquid. The process mitigates absorbent degradation problems caused by sulphur dioxide and oxygen in flue gas. | 10-03-2013 |
Patent application number | Description | Published |
20090068407 | METHOD FOR PRODUCING A MONOCRYSTALLINE SI WAFER HAVING AN APPROXIMATELY POLYGONAL CROSS-SECTION AND CORRESPONDING MONOCRYSTALLINE SI WAFER - A method of making a single-crystalline Si wafer with an approximately polygonal cross section and having a material property that is the same as a zone-pulled Si crystal, and the single-crystalline Si wafer. The method includes pulling at least one bottle neck of a crystal vertically downwards from a rotating hanging melt drop. The rotational speed of the crystal is reduced to between 0 and less than 1 rpm. In a crystal-growth phase, a Si single crystal ingot is pulled vertically downwards with an approximately polygonal cross section. An inductor is used to generate a temperature profile at a growth phase boundary of the crystal that corresponds to the shape of a cross section of the pulled Si single crystal ingot. The growth is ended at a desired pulling length and the Si single crystal ingot is cut into wafers having an approximately polygonal cross section. | 03-12-2009 |
20100037815 | Method For Producing A Single Crystal Of Semiconductor Material - A single crystal of semiconductor material is produced by a method of melting semiconductor material granules by means of a first induction heating coil on a dish with a run-off tube consisting of the semiconductor material, forming a melt of molten granules which extends from the run-off tube in the form of a melt neck and a melt waist to a phase boundary, delivering heat to the melt by means of a second induction heating coil which has an opening through which the melt neck passes, crystallizing the melt at the phase boundary, and delivering a cooling gas to the run-off tube and to the melt neck in order to control the axial position of an interface between the run-off tube and the melt neck. | 02-18-2010 |
20110314869 | METHOD AND DEVICE FOR PRODUCING THIN SILICON RODS - A method for producing thin silicon rods using a floating zone crystallization process includes supplying high frequency (HF) current to a flat induction coil having a central opening, a plurality of draw openings and a plate with a slot as a current supply of the HF current so as to provide a circumfluent current to the central opening. An upper end of a raw silicon rod is heated by induction using the flat induction coil so as to form a melt pool. A thin silicon rod is drawn upwards through each of the plurality of draw openings in the flat induction coil from the melt pool without drawing a thin silicon rod through the central opening having the circumfluent current. | 12-29-2011 |
20120285369 | METHOD AND APPARATUS FOR PRODUCING SINGLE CRYSTALS COMPOSED OF SEMICONDUCTOR MATERIAL - A method for producing a single crystal of semiconductor material having material properties of a zone-pulled single crystal includes providing a vessel transmissive to high frequency magnetic fields and having a granulate of a granular semiconductor material disposed therein and a first conductor disposed externally thereto. A high frequency current is supplied to a planar inductor disposed above the vessel, the planar inductor having a turn and a slit as a current supply so as to produce an open melt lake on the granulate by a temperature field at a surface of the granulate produced by thermal power of the planar inductor and a heating action of the first inductor, the melt lake being embedded in unmelted material of the granular semiconductor material and not being in contact with a wall of the vessel. A single crystal is pulled form the melt lake of the semiconductor material upwards. | 11-15-2012 |
20130192518 | METHOD FOR PRODUCING A SINGLE CRYSTAL OF SEMICONDUCTOR MATERIAL - A single crystal of semiconductor material is produced by a method of melting semiconductor material granules by means of a first induction heating coil on a dish with a run-off tube consisting of the semiconductor material, forming a melt of molten granules which extends from the run-off tube in the form of a melt neck and a melt waist to a phase boundary, delivering heat to the melt by means of a second induction heating coil which has an opening through which the melt neck passes, crystallizing the melt at the phase boundary, and delivering a cooling gas to the run-off tube and to the melt neck in order to control the axial position of an interface between the run-off tube and the melt neck. | 08-01-2013 |
Patent application number | Description | Published |
20100129797 | USE OF GENETIC MODIFICATIONS IN HUMAN GENE CHK1 WHICH CODES FOR CHECKPOINT KINASE 1 - The invention relates to an in vitro method for predicting disease risks, progression of diseases, drug risks, success of treatment and for finding drug targets by looking for one or more genetic modifications in the promoter region of the CHK1 (CHEK1) gene on human chromosome 11q23, the genetic modifications being a substitution thymine for guanine in position -1143 in the promoter of CHK1, of thymine for cytosine in position -1400, a substitution of cytosine for thymine in position -1453 or an insertion of one cytosine in position -1454 and the genetic modifications being detected individually or in any combinations by way of known methods. | 05-27-2010 |
20120171671 | CHK2 POLYMORPHISM AS A CANCER MARKER - The invention relates to the use of gene modifications in the human gene CHK2 (CHEK2), which encodes the checkpoint kinase 2, for predicting the risk and progression of cancer diseases, for predicting the response to pharmacological or non-pharmacological therapeutic measures for treating cancer diseases, and for predicting undesired effects of drugs. The invention further relates to the provision of individual gene variants with the help of which further gene modifications that can be used for the aforementioned purposes can be detected and validated. Such gene modifications can comprise a substitution of adenine for guanine in position -7161 in the promoter of CHK2, a substitution of guanine for cytosine in position -7235, a substitution of adenine for guanine in position -10532, or a deletion of 29 base pairs in positions -10621 to -10649. | 07-05-2012 |
20130189676 | USE OF GENETIC MODIFICATIONS IN HUMAN GENE CHK1 WHICH CODES FOR CHECKPOINT KINASE 1 - The invention relates to an in vitro method for predicting disease risks, progression of diseases, drug risks, success of treatment and for finding drug targets by looking for one or more genetic modifications in the promoter region of the CHK1 (CHEK1) gene on human chromosome 11q23, the genetic modifications being a substitution thymine for guanine in position −1143 in the promoter of CHK1, of thymine for cytosine in position −1400, a substitution of cytosine for thymine in position −1453 or an insertion of one cytosine in position −1454 and the genetic modifications being detected individually or in any combinations by way of known methods. | 07-25-2013 |
Patent application number | Description | Published |
20130036252 | PRACTICAL CODE LIST CACHE FOR VALUE HELP - Methods and apparatus, including computer program products, are provided for providing value help. In one aspect, there is provided a computer-implemented method. The method may include receiving, at a code list provider, a request from a user interface for code list value help; determining, based on the request, whether to access at least one of a cache and a secondary storage; accessing, by the code list provider, a cache including at least a first code list, the cache implemented in memory, when the determination results in access to the cache; accessing a secondary storage including at least a second code list, when the determination results in access to the secondary storage; and sending, by the code list provider, at least one of the first code list and the second code list to a user interface to enable the user interface to provide code list value help. Related apparatus, systems, methods, and articles are also described. | 02-07-2013 |