Patent application number | Description | Published |
20090096363 | ELECTROLUMINESCENT DEVICES - An electroluminescent device comprising: a first charge carrier injecting layer for injecting positive charge carriers; a second charge carrier injecting layer for injecting negative charge carriers; and a light-emissive layer located between the charge carrier injecting layers and comprising a mixture of: a first component for accepting positive charge carriers from the first charge carrier injecting layer; a second component for accepting negative charge carriers from the second charge carrier injecting layer; and a third, organic light-emissive component for generating light as a result of combination of charge carriers from the first and second components; at least one of the first, second and third components forming a type II semiconductor interface with another of the first, second and third components. | 04-16-2009 |
20100051916 | METHOD FOR FORMING AN ELECTRONIC DEVICE IN MULTI-LAYER STRUCTURE - A method for forming an organic or partly organic switching device, comprising: depositing layers of conducting, semiconducting and/or insulating layers by solution processing and direct printing; defining microgrooves in the multilayer structure by solid state embossing; and forming a switching device inside the microgroove. | 03-04-2010 |
20110008929 | ALIGNED POLYMERS FOR AN ORGANIC TFT - A method for forming an electronic device having a semiconducting active layer comprising a polymer, the method comprising aligning the chains of the polymer parallel to each other by bringing the polymer into a liquid-crystalline phase. | 01-13-2011 |
20110089406 | MULTILAYER HETEROSTRUCTURES FOR APPLICATION IN OLEDS AND PHOTOVOLTAIC DEVICES - This invention relates to a supported polymer heterostructure and methods of manufacture. The heterostructure is suitable for use in a range of applications which require semiconductor devices, including photovoltaic devices and light-emitting diodes. | 04-21-2011 |
20120064652 | OPTOELECTRONIC DEVICES AND A METHOD FOR PRODUCING THE SAME - A light-emissive device comprising a light-emissive material provided between first and second electrodes such that charge carriers can move between the first and second electrodes and the light-emissive material, wherein the device includes a layer of a polymer blend provided between the first and second electrodes, phase separation of the polymers in the polymer blend having been induced in at least a portion of the polymer blend so as to control the propagation of light emitted by the light-emissive material in a predetermined direction. | 03-15-2012 |
20120154025 | DUAL-GATE TRANSISTORS - A field effect transistor device comprising: a source electrode; a drain electrode; a semiconductive region comprising an organic semiconductor material and defining a channel of the device between the source electrode and the drain electrode; a first gate structure comprising a first gate electrode and a first dielectric region located between the first gate electrode and the semiconductive region; and a second gate structure comprising a second gate electrode and a second dielectric region located between the second gate electrode and the semiconductive region; whereby the conductance of the semiconductor region in the channel can be influenced by potentials applied separately or to both the first gate electrode and the second gate electrode. | 06-21-2012 |
20150162556 | PHOTOVOLTAIC DEVICE AND METHOD OF FABRICATING THEREOF - A photovoltaic device comprising: a first electrode, a second electrode, and disposed between the first electrode and the second electrode an organic semiconductor layer capable of multiple exciton generation and an inorganic semiconductor layer, wherein an interlayer comprising an inorganic semiconductor such as a semiconductor nanocrystal is disposed between the organic and inorganic semiconductor layers. | 06-11-2015 |
20150221896 | AMBIPOLAR, LIGHT-EMITTING FIELD-EFFECT TRANSISTORS - An ambipolar, light-emitting transistor comprising an organic semiconductive layer in contact with an electron injecting electrode and a hole injecting electrode separated by a distance L defining the channel length of the transistor, in which the zone of: the organic semiconductive layer from which the light is emitted is located more than L/10 away from both the electron as well as the hole injecting electrode. | 08-06-2015 |