Patent application number | Description | Published |
20100148167 | MAGNETIC TUNNEL JUNCTION STACK - A magnetic tunnel junction ( | 06-17-2010 |
20110244599 | PROCESS INTEGRATION OF A SINGLE CHIP THREE AXIS MAGNETIC FIELD SENSOR - A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a āZā axis magnetic field onto sensors orientated in the XY plane. | 10-06-2011 |
20120313191 | SPIN-TORQUE MAGNETORESISTIVE MEMORY ELEMENT AND METHOD OF FABRICATING SAME - A spin-torque magnetoresistive memory element has a high magnetoresistance and low current density. A free magnetic, layer is positioned between first and second spin polarizers. A first tunnel barrier is positioned between the first spin polarizer and the free magnetic layer and a second tunnel barrier is positioned between the second spin polarizer and the free magnetic layer. The magnetoresistance ratio of the second tunnel barrier has a value greater than double the magnetoresistance ratio of the first tunnel barrier. | 12-13-2012 |
20130264666 | TWO-AXIS MAGNETIC FIELD SENSOR HAVING REDUCED COMPENSATION ANGLE FOR ZERO OFFSET - A sensor and fabrication process are provided for forming reference layers with substantially orthogonal magnetization directions having zero offset with a small compensation angle. An exemplary embodiment includes a sensor layer stack of a magnetoresistive thin-film based magnetic field sensor, the sensor layer stack comprising a pinning layer; a pinned layer including a layer of amorphous material over the pinning layer, and a first layer of crystalline material over the layer of amorphous material; a nonmagnetic coupling layer over the pinned layer; a fixed layer over the nonmagnetic coupling layer; a tunnel barrier over the fixed layer; and a sense layer over the nonmagnetic intermediate layer. Another embodiment includes a sensor layer stack where a pinned layer including two crystalline layers separated by a amorphous layer. | 10-10-2013 |
20140138346 | PROCESS INTEGRATION OF A SINGLE CHIP THREE AXIS MAGNETIC FIELD SENSOR - A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a āZā axis magnetic field onto sensors orientated in the XY plane. | 05-22-2014 |
20140159179 | TWO-AXIS MAGNETIC FIELD SENSOR HAVING REDUCED COMPENSATION ANGLE FOR ZERO OFFSET - A sensor and fabrication process are provided for forming reference layers with substantially orthogonal magnetization directions having zero offset with a small compensation angle. An exemplary embodiment includes a sensor layer stack of a magnetoresistive thin-film based magnetic field sensor, the sensor layer stack comprising a pinning layer; a pinned layer including a layer of amorphous material over the pinning layer, and a first layer of crystalline material over the layer of amorphous material; a nonmagnetic coupling layer over the pinned layer; a fixed layer over the nonmagnetic coupling layer; a tunnel barrier over the fixed layer; and a sense layer over the nonmagnetic intermediate layer. Another embodiment includes a sensor layer stack where a pinned layer including two crystalline layers separated by a amorphous layer. | 06-12-2014 |
20140217528 | SPIN-TORQUE MAGNETORESISTIVE MEMORY ELEMENT AND METHOD OF FABRICATING SAME - A spin-torque magnetoresistive memory element has a high magnetoresistance and low current density. A free magnetic layer is positioned between first and second spin polarizers. A first tunnel barrier is positioned between the first spin polarizer and the free magnetic layer and a second tunnel barrier is positioned between the second spin polarizer and the free magnetic layer. The magnetoresistance ratio of the second tunnel barrier has a value greater than double the magnetoresistance ratio of the first tunnel barrier. | 08-07-2014 |
20150021606 | MRAM SYNTHETIC ANITFEROMAGNET STRUCTURE - An MRAM bit ( | 01-22-2015 |