Patent application number | Description | Published |
20090016088 | SEMICONDUCTOR ASSEMBLY - A semiconductor assembly is disclosed. One embodiment provides a first semiconductor and a second semiconductor, each having a first main connection and a second main connection arranged on opposite sides, and a carrier having a patterned metallization with a first section spaced apart from a second section. The first semiconductor is electrically connected to the first section by its second main connection, and the second semiconductor electrically connected to the second section by its second main connection. The first semiconductor chip first main connection and the second semiconductor chip first main connection are electrically connected to one another and for the connection of an external load or of an external supply voltage. | 01-15-2009 |
20090039498 | POWER SEMICONDUCTOR MODULE - A power semiconductor module is disclosed. One embodiment includes a multilayer substrate having a plurality of metal layers and a plurality of ceramic layers, where the ceramic layers are located between the metal layers. | 02-12-2009 |
20090085219 | POWER SEMICONDUCTOR ARRANGEMENT - A power semiconductor arrangement is provided that includes a power semiconductor chip being electrically connected to a set of plug-like elements with at least two plug-like elements and further including a sheet metal strip line including a set of openings receiving the first set of plug-like elements, where the set of openings in the sheet metal strip line and the set of plug-like elements establish a press fit connection. | 04-02-2009 |
20090153223 | IGBT-DRIVER CIRCUIT FOR DESATURATED TURN-OFF WITH HIGH DESATURATION LEVEL - A driver circuit comprising an insulated gate bipolar transistor having a collector coupled to a voltage supply, an emitter coupled to a source of reference potential, and a gate configured to receive a control signal from a driver circuit, and a desaturation circuit conductively coupled between an insulated gate and a collector of the insulated gate bipolar transistor to desaturate the insulated gate. The desaturation circuit includes a series coupled bias voltage source, uni-directionally conducting element and switch. | 06-18-2009 |
20090243089 | MODULE INCLUDING A ROUGH SOLDER JOINT - A module includes a metallized substrate including a metal layer, a base plate, and a joint joining the metal layer to the base plate. The joint includes solder contacting the base plate and an inter-metallic zone contacting the metal layer and the solder. The inter-metallic zone has spikes up to 100 μm and a roughness (R | 10-01-2009 |
20090261472 | Power Semiconductor Module with Pressure Element and Method for Fabricating a Power Semiconductor Module with a Pressure Element - The invention relates to a power semiconductor module comprising at least one power semiconductor chip, and comprising a pressure apparatus which exerts a pressure on the top side of the power semiconductor chip when the power semiconductor module is fixed to a heat sink. In addition, a bonding wire which is arranged distant from the pressure element, is bonded to the top side. The invention also relates to methods for fabricating a power semiconductor module, and for fabricating a power semiconductor arrangement comprising a power semiconductor module and a heat sink. | 10-22-2009 |
20100001785 | SEMICONDUCTOR COMPONENT AND METHOD OF DETERMINING TEMPERATURE - One embodiment provides a circuit arrangement integrated in a semiconductor body. At least one power semiconductor component integrated in the semiconductor body and having a control connection and a load connection is provided. A resistance component is thermally coupled to the power semiconductor component and likewise integrated into the semiconductor body and arranged between the control connection and the load connection of the power semiconductor component. The resistance component has a temperature-dependent resistance characteristic curve. A driving and evaluation unit is designed to evaluate the current through the resistance component or the voltage drop across the resistance component and provides a temperature signal dependent thereon. | 01-07-2010 |
20100065962 | POWER SEMICONDUCTOR MODULE - A semiconductor module includes a multilayer substrate. The multilayer substrate includes a first metal layer and a first ceramic layer over the first metal layer. An edge of the first ceramic layer extends beyond an edge of the first metal layer. The multilayer substrate includes a second metal layer over the first ceramic layer and a second ceramic layer over the second metal layer. An edge of the second ceramic layer extends beyond an edge of the second metal layer. The multilayer substrate includes a third metal layer over the second ceramic layer. | 03-18-2010 |
20100066175 | CIRCUIT ASSEMBLY FOR GATING A POWER SEMICONDUCTOR SWITCH - An embodiment of the invention relates to a circuit assembly having the following components: a power transistor with a control terminal, a first load terminal and a second load terminal, the second load terminal having a floating potential; a driver circuit configured to generate control signals for the control terminal of the power transistor, the relevant reference potential for the driver circuit being the floating potential of the second load terminal; a planar metallization layer sited on or in a substrate and comprising a constant reference potential, a shielding plane isolated from the metallization layer, sited planar on or in the substrate such that it is capacitively coupled to the metallization layer; a power supply circuit for providing a supply voltage referenced to the floating potential of the second load terminal for the driver circuit, the power supply circuit comprising, circuited between the second load terminal and the shielding plane, a first series circuit including a first capacitor and a first diode. | 03-18-2010 |
20100084926 | CIRCUIT ASSEMBLY INCLUDING A POWER SEMICONDUCTOR MODULE AND A CONTROLLER - A circuit assembly includes a power semiconductor module and, arranged externally thereto, a controller wherein the power semiconductor module comprises at least one controllable power semiconductor as well as at least one driver gating the latter, and controller and power semiconductor module each comprising a transceiver configured to communicate control signals between the controller and the power semiconductor module via an electromagnetic communication link unidirectionally or bidirectionally. | 04-08-2010 |
20100085105 | CIRCUIT ARRANGEMENT INCLUDING A VOLTAGE SUPPLY CIRCUIT AND SEMICONDUCTOR SWITCHING ELEMENT - A circuit arrangement comprising a first semiconductor switching element, which has a load path and a drive terminal. A voltage supply circuit, is provided including an inductance connected in series with the load path of the first semiconductor switching element, and a capacitive charge storage arrangement, which is connected in parallel with the inductance and which has a first and a second output terminal for providing a supply voltage. | 04-08-2010 |
20100134179 | CIRCUIT ARRANGEMENT INCLUDING VOLTAGE SUPPLY CIRCUIT - One embodiment of a circuit arrangement includes first and second input voltage terminals for applying an input voltage, and at least one first semiconductor switching element having a drive terminal and a load path, the load path being connected between the input voltage terminals. A drive circuit is configured to receive a supply voltage, and has a drive output connected to the drive terminal of the at least one semiconductor switching element. A free-running oscillator is configured to generate an oscillating output voltage. A voltage supply circuit is provided for receiving the oscillating output voltage or a voltage dependent on the oscillating output voltage, and for providing the supply voltage of the drive circuit. | 06-03-2010 |
20100252922 | Power Semiconductor Module, Power Semiconductor Module Assembly and Method for Fabricating a Power Semiconductor Module Assembly - The invention relates to a power semiconductor module including a power semiconductor chip arranged on a substrate and comprising a bottom side facing the substrate, a top side facing away from the substrate, and an electrical contact face arranged on the top side. A bond wire is bonded to the contact face. At least when the power semiconductor module is fastened to a heatsink, a contact pressure element creates a contact pressure force (F) acting on a sub-portion | 10-07-2010 |
20110053319 | Method for Fabricating a Circuit Substrate Assembly and a Power Electronics Module Comprising an Anchoring Structure for Producing a Changing Temperature-Stable Solder Bond - A power semiconductor module is fabricated by providing a circuit substrate with a metal surface and an insulating substrate comprising an insulation carrier featuring a bottom side provided with a bottom metallization layer. An anchoring structure is provided comprising a plurality of oblong pillars each featuring a first end facing away from the insulation carrier, at least a subset of the pillars being distributed over the anchoring structure in its entirety, it applying for each of the pillars of the subset that from a sidewall thereof no or a maximum of three elongated bonding webs each extend to a sidewall of another pillar where they are bonded thereto. The anchoring structure is positioned between the insulation carrier and metal surface, after which the metal surface is soldered to the bottom metallization layer and anchoring structure by means of a solder packing all interstices between the metal surface and bottom metallization layer with the solder. | 03-03-2011 |
20110070695 | METHOD OF FABRICATING A HIGH-TEMPERATURE COMPATIBLE POWER SEMICONDUCTOR MODULE - The invention relates to a method for fabricating a high-temperature compatible power semiconductor module in which a power semiconductor chip is bonded by means of a diffusion solder layer to a substrate and said substrate is bonded by means of silver sintered layer to a base plate, after which a bonding element is bonded to the top chip metallization. To prevent oxidation of the predefined bond area when producing the diffusion solder layer and the sintered silver layer | 03-24-2011 |
20110075451 | Power Semiconductor Module and Method for Operating a Power Semiconductor Module - A power semiconductor module is provided in which power semiconductor chips with an aluminum-based chip metallization and power semiconductor chips with a copper-based chip metallization are included in the same module, and operated at different barrier-layer temperatures during use. | 03-31-2011 |
20110216561 | Low-Inductance Power Semiconductor Assembly - A power semiconductor assembly includes at least two bridge branches each including at least two circuit breakers connected to a phase output. Each of the circuit breakers has at least two parallel-connected switching elements integrated into a semiconductor chip. Each of the circuit breakers is arranged in a power semiconductor module and the individual power semiconductor modules are arranged adjacent to one another in a first direction. The semiconductor chips of a particular circuit breaker are arranged adjacent to one another in the corresponding power semiconductor module in a second direction extending perpendicular to the first direction. | 09-08-2011 |
20110256749 | Press-Fit Connections for Electronic Modules - A press-fit connecting element for being pressed into a first contact opening in a first connection element and into a second contact opening in a second connection element is provided. The press-fit connecting element includes an elongated base body configured to be guided through the second contact opening in the second connection element to the first contact opening in the first connection element. The press-fit connecting element further includes a first press-fit zone configured to contact-connect the first contact opening in a force-fitting manner and a second press-fit zone which is at a distance from the first press-fit zone in a longitudinal direction and configured to contact-connect the second contact opening in a force-fitting manner. | 10-20-2011 |
20110316160 | Semiconductor Arrangement, Semiconductor Module, and Method for Connecting a Semiconductor Chip to a Ceramic Substrate - A semiconductor arrangement includes a silicon body having a top surface and a bottom surface, and a thick metal layer arranged on the top surface of the silicon body. The thick metal layer has a bonding surface facing away from the top surface of the silicon body. A bonding wire or a ribbon is bonded to the thick metal layer at the bonding surface of the thick metal layer. The thickness of the thick metal layer is at least | 12-29-2011 |
20120080799 | Semiconductor Module Comprising an Insert and Method for Producing a Semiconductor Module Comprising an Insert - A power semiconductor module is fabricated by providing a base with a metal surface and an insulating substrate comprising an insulation carrier having a bottom side provided with a bottom metallization layer. An insert exhibiting a wavy structure is provided. The insert is positioned between the insulation carrier and metal surface, after which the metal surface is soldered to the bottom side metallization layer and insert by means of a solder packing all interstices between the metal surface and bottom side metallization layer with the solder. | 04-05-2012 |
20120119721 | CIRCUIT ARRANGEMENT INCLUDING VOLTAGE SUPPLY CIRCUIT - A circuit arrangement comprising a first semiconductor switching element, which has a load path and a drive terminal. A voltage supply circuit, is provided including an inductance connected in series with the load path of the first semiconductor switching element, and a capacitive charge storage arrangement, which is connected in parallel with the inductance and which has a first and a second output terminal for providing a supply voltage. | 05-17-2012 |
20120164865 | CONNECTING SYSTEM FOR ELECTRICALLY CONNECTING ELECTRONIC DEVICES AND METHOD FOR CONNECTING AN ELECTRICALLY CONDUCTIVE FIRST CONNECTOR AND AN ELECTRICALLY CONDUCTIVE SECOND CONNECTOR - A connecting system for electrically connecting electronic devices includes an electrically conductive first connector, an electrically conductive second connector and a clip element. The first connector is insertable in the second connector. The first connector or the second connector has a first opening into which the clip element can be inserted. In the inserted state, the clip element generates a contact pressure due to which the first connector and the second connector are pressed against one another so that an electrical contact between the first connector and the second connector is safeguarded. | 06-28-2012 |
20120175755 | SEMICONDUCTOR DEVICE INCLUDING A HEAT SPREADER - A semiconductor device includes a semiconductor chip including back side metal, a substrate, and an electrically conductive heat spreader directly contacting the back side metal. The semiconductor chip includes a sintered joint directly contacting the heat spreader and electrically coupling the heat spreader to the substrate. | 07-12-2012 |
20120175780 | SEMICONDUCTOR COMPONENT AND METHOD OF MAKING THE SAME - One embodiment provides a semiconductor chip including a semiconductor body and a power semiconductor component integrated therein. The power semiconductor component includes a load electrode zone arranged on a first surface of the semiconductor body, a control electrode zone arranged on the first surface, the control electrode zone being electrically insulated from the load electrode zone, and a resistance track arranged on the load electrode zone and the control electrode zone. The resistance track ensures an electrical connection between the load electrode zone and the control electrode zone. | 07-12-2012 |
20120235663 | SEMICONDUCTOR DEVICE INCLUDING A CIRCUIT TO COMPENSATE FOR PARASITIC INDUCTANCE - A semiconductor device includes a first transistor, a second transistor coupled in parallel with the first transistor, and a first parasitic inductance between an emitter of the first transistor and an emitter of the second transistor. The semiconductor device includes a first circuit configured to provide a first gate driver signal to the first transistor based on a common driver signal and a second circuit configured to provide a second gate driver signal to the second transistor based on the common driver signal. The first circuit and the second circuit are configured to compensate for a voltage drop across the first parasitic inductance such that the first gate driver signal and the second gate driver signal are in phase with and at the same magnitude as the common driver signal. | 09-20-2012 |
20120306087 | SEMICONDUCTOR DEVICE INCLUDING EXCESS SOLDER - A semiconductor device includes a substrate including a first metal layer, a first semiconductor chip having sidewalls, and a first solder layer contacting the first semiconductor chip and the first metal layer. The first metal layer includes a groove extending around sidewalls of the first semiconductor chip. The groove is at least partly filled with excess solder from the first solder layer. | 12-06-2012 |
20130040424 | Fixing Semiconductor Die in Dry and Pressure Supported Assembly Processes - Semiconductor die are assembled on a substrate by providing the semiconductor die, substrate, and an elastically deformable foil fixture preformed with one or more sunken regions having sidewalls and a bottom, and placing the semiconductor die in the one or more sunken regions so that the foil fixture is populated with a first side of the semiconductor die facing the bottom of the one or more sunken regions and a second opposing side of the semiconductor die facing away from the bottom of the one or more sunken regions. The substrate is placed adjacent the second side of the semiconductor die with a joining material interposed between the substrate and the semiconductor die. The substrate and the populated foil fixture are pressed together at an elevated temperature and pressure via first and second pressing tool members so that the substrate is attached to the second side of the semiconductor die via the joining material. | 02-14-2013 |
20130056185 | Elastic Mounting of Power Modules - A semiconductor module includes a base plate having an inner region adjacent an edge region, a substrate attached to the inner region of the base plate and a heat sink on which the base plate is mounted so that the base plate is interposed between the substrate and the heat sink and at least part of the inner region of the base plate contacts the heat sink. The module further includes a stress relief mechanism configured to permit the base plate to bend away from the heat sink in the edge region responsive to a thermal load so that at least part of the inner region of the base plate remains in contact with the heat sink. | 03-07-2013 |
20130093046 | LOW IMPEDANCE GATE CONTROL METHOD AND APPARATUS - According to one embodiment of a module, the module includes a plurality of gate driver chips coupled in parallel and having a common gate input, a common supply voltage and a common output. The chips are spaced apart from one another and have a combined width extending between an edge of a first outer one of the chips and an opposing edge of a second outer one of the chips. The module further includes a plurality of capacitors coupled in parallel between ground and the common supply voltage, and a transverse electromagnetic (TEM) transmission line medium coupled to the common output of the chips and having a current flow direction perpendicular to the combined width of the chips. | 04-18-2013 |
20130094122 | Low Inductance Capacitor Module and Power System with Low Inductance Capacitor Module - According to one embodiment of a capacitor module, the capacitor module includes a substrate having a metallization on a first side of the substrate, a plurality of connectors electrically coupled to the metallization and a plurality of capacitors disposed on the metallization. The plurality of capacitors includes a first set of capacitors electrically connected in parallel between a first set of the connectors and a second set of the connectors. The capacitor module further includes a housing enclosing the plurality of capacitors within the capacitor module. | 04-18-2013 |
20130203218 | Method for Producing a Composite and a Power Semiconductor Module - A composite is produced by providing a first and a second joining partner, a connecting means, a sealing means, a reactor having a pressure chamber, and a heating element. The two joining partners and the connecting means are arranged in the pressure chamber such that the connecting means is situated between the first joining partner and the second joining partner. A gas-tight region is then produced, in which the connecting means is arranged. Afterward, a gas pressure of at least 20 bar is produced in the pressure chamber outside the gas-tight region. The gas pressure acts on the gas-tight region and presses the first joining partner, the second joining partner and the connecting means together. The joining partners and the connecting means are then heated by means of the heating element to a predefined maximum temperature of at least 210° C. and then cooled. | 08-08-2013 |
20130307156 | Reliable Area Joints for Power Semiconductors - A power semiconductor module includes an electrically insulating substrate, copper metallization disposed on a first side of the substrate and patterned into a die attach region and a plurality of contact regions, and a semiconductor die attached to the die attach region. The die includes an active device region and one or more copper die metallization layers disposed above the active device region. The active device region is disposed closer to the copper metallization than the one or more copper die metallization layers. The copper die metallization layer spaced furthest from the active device region has a contact area extending over a majority of a side of the die facing away from the substrate. The module further includes a copper interconnect metallization connected to the contact area of the die via an aluminum-free area joint and to a first one of the contact regions of the copper metallization. | 11-21-2013 |
20140035118 | Semiconductor Module Arrangement and Method for Producing and Operating a Semiconductor Module Arrangement - A semiconductor module arrangement includes a semiconductor module having a top side, an underside opposite the top side, and a plurality of electrical connection contacts formed at the top side. The semiconductor module arrangement additionally includes a printed circuit board, a heat sink having a mounting side, and one or a plurality of fixing elements for fixing the printed circuit board to the heat sink. Either a multiplicity of projections are formed at the underside of the semiconductor module and a multiplicity of receiving regions for receiving the projections are formed at the mounting side of the heat sink, or a multiplicity of projections are formed at the mounting side of the heat sink and a multiplicity of receiving regions for receiving the projections are formed at the underside of the semiconductor module. In any case, each of the projections extends into one of the receiving regions. | 02-06-2014 |
20140139268 | DRIVER CIRCUIT WITH TIGHT CONTROL OF GATE VOLTAGE - A driver circuit includes a driver output stage and an operational amplifier. The driver output stage has a high-level voltage input and a low-level voltage input, and is operable to generate an output voltage responsive to a gate voltage applied to the driver output stage. The operational amplifier is operable to regulate the gate voltage applied to the driver output stage so that the output voltage corresponds to a control signal input to the operational amplifier. A first supply voltage connected to the high-level voltage input of the driver output stage is higher than a maximum value of the control signal, and a second supply voltage connected to the low-level voltage input of the driver output stage is lower than a minimum value of the control signal. | 05-22-2014 |
20140151868 | Moisture-tight semiconductor module and method for producing a moisture-tight semiconductor module - A semiconductor module is provided which is well protected against corrosion and/or other damage which can be caused by moisture and/or other harmful substances surrounding the semiconductor module. A method for producing such a semiconductor module is also provided. | 06-05-2014 |
20140197539 | Bonded System with Coated Copper Conductor - A semiconductor component includes a semiconductor die and a copper-containing electrical conductor. The semiconductor die has a semiconductor device region, an aluminum-containing metal layer on the semiconductor device region, and at least one additional metal layer on the aluminum-containing metal layer which is harder than the aluminum-containing metal layer. The copper-containing electrical conductor is bonded to the at least one additional metal layer of the semiconductor die via an electrically conductive coating of the copper-containing electrical conductor which is softer than the copper of the copper-containing electrical conductor. | 07-17-2014 |
20140370663 | Method for Producing a Semiconductor Module - A semiconductor module is produced by providing a circuit carrier having a metallization, an electrically conductive wire and a bonding device. With the aid of the bonding device, a bonding connection is produced between the metallization and a first section of the wire. A separating location and a second section of the wire, the second section being spaced apart from the separating location, are defined on the wire. The wire is reshaped in the second section. Before or after reshaping, the wire is severed at the separating location, such that a terminal conductor of the semiconductor module is formed from a part of the wire. The terminal conductor is bonded to the metallization and having a free end at the separating location. | 12-18-2014 |