Patent application number | Description | Published |
20140116491 | BULK-SIZE NANOSTRUCTURED MATERIALS AND METHODS FOR MAKING THE SAME BY SINTERING NANOWIRES - Thermoelectric solid material and method thereof. The thermoelectric solid material includes a plurality of nanowires. Each nanowire of the plurality of nanowires corresponds to an aspect ratio (e.g., a ratio of a length of a nanowire to a diameter of the nanowire) equal to or larger than 10, and each nanowire of the plurality of nanowires is chemically bonded to one or more other nanowires at at least two locations of the each nanowire. | 05-01-2014 |
20140360546 | SILICON-BASED THERMOELECTRIC MATERIALS INCLUDING ISOELECTRONIC IMPURITIES, THERMOELECTRIC DEVICES BASED ON SUCH MATERIALS, AND METHODS OF MAKING AND USING SAME - Silicon-based thermoelectric materials including isoelectronic impurities, thermoelectric devices based on such materials, and methods of making and using same are provided. According to one embodiment, a thermoelectric material includes silicon and one or more isoelectronic impurity atoms selected from the group consisting of carbon, tin, and lead disposed within the silicon in an amount sufficient to scatter thermal phonons propagating through the silicon and below a saturation limit of the one or more isoelectronic impurity atoms in the silicon. In one example, the thermoelectric material also includes germanium atoms disposed within the silicon in an amount sufficient to scatter thermal phonons propagating through the silicon and below a saturation limit of germanium in the silicon. Each of the one or more isoelectronic impurity atoms and the germanium atoms can independently substitute for a silicon atom or can be disposed within an interstice of the silicon. | 12-11-2014 |
20150064830 | THERMOELECTRIC DEVICES HAVING REDUCED THERMAL STRESS AND CONTACT RESISTANCE, AND METHODS OF FORMING AND USING THE SAME - A method includes preparing a thermoelectric material including p-type or n-type material and first and second caps including transition metal(s). A powder precursor of the first cap can be loaded into a sintering die, punches assembled thereto, and a pre-load applied to form a first pre-pressed structure including a first flat surface. A punch can be removed, a powder precursor of the p-type or n-type material loaded onto that surface, the punch assembled to the die, and a second pre-load applied to form a second pre-pressed structure including a second substantially flat surface. The punch can be removed, a powder precursor of the second cap loaded onto that surface, the first punch assembled to the die, and a third pre-load applied to form a third pre-pressed structure. The third pre-pressed structure can be sintered to form the thermoelectric material; the first or second cap can be coupled to an electrical connector. | 03-05-2015 |
20150243868 | THERMOELECTRIC DEVICES HAVING REDUCED THERMAL STRESS AND CONTACT RESISTANCE, AND METHODS OF FORMING AND USING THE SAME - A method includes preparing a thermoelectric material including p-type or n-type material and first and second caps including transition metal(s). A powder precursor of the first cap can be loaded into a sintering die, punches assembled thereto, and a pre-load applied to form a first pre-pressed structure including a first flat surface. A punch can be removed, a powder precursor of the p-type or n-type material loaded onto that surface, the punch assembled to the die, and a second pre-load applied to form a second pre-pressed structure including a second substantially flat surface. The punch can be removed, a powder precursor of the second cap loaded onto that surface, the first punch assembled to the die, and a third pre-load applied to form a third pre-pressed structure. The third pre-pressed structure can be sintered to form the thermoelectric material; the first or second cap can be coupled to an electrical connector. | 08-27-2015 |