Patent application number | Description | Published |
20100032303 | Method and apparatus for electroplating including remotely positioned second cathode - An apparatus for electroplating a layer of metal on the surface of a wafer includes a second cathode located remotely with respect to the wafer. The remotely positioned second cathode allows modulation of current density at the wafer surface during an entire electroplating process. The second cathode diverts a portion of current flow from the near-edge region of the wafer and improves the uniformity of plated layers. The remote position of second cathode allows the insulating shields disposed in the plating bath to shape the current profile experienced by the wafer, and therefore act as a “virtual second cathode”. The second cathode may be positioned outside of the plating vessel and separated from it by a membrane. | 02-11-2010 |
20100032310 | Method and apparatus for electroplating - An apparatus for electroplating a layer of metal on the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer (preferably within 5 mm of the wafer surface) which serves to modulate ionic current at the wafer surface, and a second cathode configured to divert a portion of current from the wafer surface. The ionically resistive ionically permeable element in a preferred embodiment is a disk made of a resistive material having a plurality of perforations formed therein, such that perforations do not form communicating channels within the body of the disk. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect. | 02-11-2010 |
20100044236 | METHOD AND APPARATUS FOR ELECTROPLATING - An apparatus for electroplating a layer of metal onto the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer and an auxiliary cathode located between the anode and the ionically resistive ionically permeable element. The ionically resistive ionically permeable element serves to modulate ionic current at the wafer surface. The auxiliary cathode is configured to shape the current distribution from the anode. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect. | 02-25-2010 |
20100116672 | METHOD AND APPARATUS FOR ELECTROPLATING - An apparatus for electroplating a layer of metal onto the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer and an auxiliary cathode located between the anode and the ionically resistive ionically permeable element. The ionically resistive ionically permeable element serves to modulate ionic current at the wafer surface. The auxiliary cathode is configured to shape the current distribution from the anode. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect. | 05-13-2010 |
20110076390 | METHODS FOR MULTI-STEP COPPER PLATING ON A CONTINUOUS RUTHENIUM FILM IN RECESSED FEATURES - Methods are provided for multi-step Cu metal plating on a continuous Ru metal film in recessed features found in advanced integrated circuits. The use of a continuous Ru metal film prevents formation of undesirable micro-voids during Cu metal filling of high-aspect-ratio recessed features, such as trenches and vias, and enables formation of large Cu metal grains that include a continuous Cu metal layer plated onto the continuous Ru metal film. The large Cu grains lower the electrical resistivity of the Cu filled recessed features and increase the reliability of the integrated circuit. | 03-31-2011 |
20110221044 | TUNGSTEN BARRIER AND SEED FOR COPPER FILLED TSV - Apparatus and methods for filling through silicon vias (TSV's) with copper having an intervening tungsten layer between the copper plug and the silicon are disclosed. Methods are useful for Damascene processing, with or without a TSV feature. The tungsten layer serves as a diffusion barrier, a seed layer for copper electrofill and a means of reducing CTE-induced stresses between copper and silicon. Adhesion of the tungsten layer to the silicon and of the copper layer to the tungsten is described. | 09-15-2011 |
20120279864 | PROCESS FOR ELECTROPLATING METALS INTO MICROSCOPIC RECESSED FEATURES - Several techniques are described for reducing or mitigating the formation of seams and/or voids in electroplating the interior regions of microscopic recessed features. Cathodic polarization is used to mitigate the deleterious effects of introducing a substrate plated with a seed layer into an electroplating solution. Also described are diffusion-controlled electroplating techniques to provide for bottom-up filling of trenches and vias, avoiding thereby sidewalls growing together to create seams/voids. A preliminary plating step is also described that plates a thin film of conductor on the interior surfaces of features leading to adequate electrical conductivity to the feature bottom, facilitating bottom-up filling. | 11-08-2012 |
20130327650 | METHOD AND APPARATUS FOR ELECTROPLATING - An apparatus for electroplating a layer of metal onto the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer and an auxiliary cathode located between the anode and the ionically resistive ionically permeable element. The ionically resistive ionically permeable element serves to modulate ionic current at the wafer surface. The auxiliary cathode is configured to shape the current distribution from the anode. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect. | 12-12-2013 |
Patent application number | Description | Published |
20100032304 | High Resistance Ionic Current Source - A substantially uniform layer of a metal is electroplated onto a work piece having a seed layer thereon. This is accomplished by employing a “high resistance ionic current source,” which solves the terminal problem by placing a highly resistive membrane (e.g., a microporous ceramic or fretted glass element) in close proximity to the wafer, thereby swamping the system's resistance. The membrane thereby approximates a constant current source. By keeping the wafer close to the membrane surface, the ionic resistance from the top of the membrane to the surface is much less than the ionic path resistance to the wafer edge, substantially compensating for the sheet resistance in the thin metal film and directing additional current over the center and middle of the wafer. | 02-11-2010 |
20100041226 | Process For Through Silicon Via Filing - A semiconductor electroplating process deposits copper into the through silicon via hole to completely fill the through silicon via in a substantially void free is disclosed. The through silicon via may be more than about 3 micrometers in diameter and more that about 20 micrometers deep. Low copper concentration and high acidity electroplating solution is used for deposition copper into the through silicon vias. | 02-18-2010 |
20100155254 | WAFER ELECTROPLATING APPARATUS FOR REDUCING EDGE DEFECTS - Methods, apparatuses, and various apparatus components, such as base plates, lipseals, and contact ring assemblies are provided for reducing contamination of the contact area in the apparatuses. Contamination may happen during removal of semiconductor wafers from apparatuses after the electroplating process. In certain embodiments, a base plate with a hydrophobic coating, such as polyamide-imide (PAI) and sometimes polytetrafluoroethylene (PTFE), are used. Further, contact tips of the contact ring assembly may be positioned further away from the sealing lip of the lipseal. In certain embodiments, a portion of the contact ring assembly and/or the lipseal also include hydrophobic coatings. | 06-24-2010 |
20100200412 | Process For Through Silicon Via Filling - A semiconductor electroplating process deposits copper into the through silicon via hole to completely fill the through silicon via in a substantially void free is disclosed. The through silicon via may be more than about 3 micrometers in diameter and more that about 20 micrometers deep. High copper concentration and low acidity electroplating solution is used for deposition copper into the through silicon vias. | 08-12-2010 |
20110083965 | Electrolyte Concentration Control System for High Rate Electroplating - An electroplating apparatus for filling recessed features on a semiconductor substrate includes an electrolyte concentrator configured for concentrating an electrolyte having Cu | 04-14-2011 |
20120031768 | PROCESS FOR THROUGH SILICON VIA FILLING - A semiconductor electroplating process deposits copper into the through silicon via hole to completely fill the through silicon via in a substantially void free is disclosed. The through silicon via may be more than about 3 micrometers in diameter and more that about 20 micrometers deep. High copper concentration and low acidity electroplating solution is used for deposition copper into the through silicon vias. | 02-09-2012 |
20120175263 | CONFIGURATION AND METHOD OF OPERATION OF AN ELECTRODEPOSITION SYSTEM FOR IMPROVED PROCESS STABILITY AND PERFORMANCE - Methods, systems, and apparatus for plating a metal onto a work piece with a plating solution having a low oxygen concentration are described. In one aspect, a method includes reducing an oxygen concentration of a plating solution. The plating solution includes about | 07-12-2012 |
20120181170 | WAFER ELECTROPLATING APPARATUS FOR REDUCING EDGE DEFECTS - Methods, apparatuses, and various apparatus components, such as base plates, lipseals, and contact ring assemblies are provided for reducing contamination of the contact area in the apparatuses. Contamination may happen during removal of semiconductor wafers from apparatuses after the electroplating process. In certain embodiments, a base plate with a hydrophobic coating, such as polyamide-imide (PAI) and sometimes polytetrafluoroethylene (PTFE), are used. Further, contact tips of the contact ring assembly may be positioned further away from the sealing lip of the lipseal. In certain embodiments, a portion of the contact ring assembly and/or the lipseal also include hydrophobic coatings. | 07-19-2012 |
20120261254 | METHOD AND APPARATUS FOR FILLING INTERCONNECT STRUCTURES - Methods, apparatus, and systems for depositing copper and other metals are provided. In some implementations, a wafer substrate is provided to an apparatus. The wafer substrate has a surface with field regions and a feature. A copper layer is plated onto the surface of the wafer substrate. The copper layer is annealed to redistribute copper from regions of the wafer substrate to the feature. Implementations of the disclosed methods, apparatus, and systems allow for void-free bottom-up fill of features in a wafer substrate. | 10-18-2012 |
20120264290 | METHOD AND APPARATUS FOR FILLING INTERCONNECT STRUCTURES - Methods, apparatus, and systems for depositing copper and other metals are provided. In some implementations, a wafer substrate is provided to an apparatus. The wafer substrate has a surface with field regions and a feature. A copper layer is plated onto the surface of the wafer substrate. The copper layer is annealed to redistribute copper from regions of the wafer substrate to the feature. Implementations of the disclosed methods, apparatus, and systems allow for void-free bottom-up fill of features in a wafer substrate. | 10-18-2012 |
20130134045 | DYNAMIC CURRENT DISTRIBUTION CONTROL APPARATUS AND METHOD FOR WAFER ELECTROPLATING - Methods, systems, and apparatus for plating a metal onto a work piece are described. In one aspect, an apparatus includes a plating chamber, a substrate holder, an anode chamber housing an anode, and an ionically resistive ionically permeable element positioned between a substrate and the anode chamber during electroplating. The anode chamber may be movable with respect to the ionically resistive ionically permeable element to vary a distance between the anode chamber and the ionically resistive ionically permeable element during electroplating. The anode chamber may include an insulating shield oriented between the anode and the ionically resistive ionically permeable element, with opening in a central region of the insulating shield. | 05-30-2013 |
20130137242 | DYNAMIC CURRENT DISTRIBUTION CONTROL APPARATUS AND METHOD FOR WAFER ELECTROPLATING - Methods, systems, and apparatus for plating a metal onto a work piece are described. In one aspect, an apparatus includes a plating chamber, a substrate holder, an anode chamber housing an anode, an ionically resistive ionically permeable element positioned between a substrate and the anode chamber during electroplating, an auxiliary cathode located between the anode and the ionically resistive ionically permeable element, and an insulating shield with an opening in its central region. The insulating shield may be movable with respect to the ionically resistive ionically permeable element to vary a distance between the shield and the ionically resistive ionically permeable element during electroplating. | 05-30-2013 |
20130284604 | METHOD AND APPARATUS FOR ELECTROPLATING SEMICONDUCTOR WAFER WHEN CONTROLLING CATIONS IN ELECTROLYTE - Apparatus and methods for electroplating metal onto substrates are disclosed. The electroplating apparatus comprise an electroplating cell and at least one oxidization device. The electroplating cell comprises a cathode chamber and an anode chamber separated by a porous barrier that allows metal cations to pass through but prevents organic particles from crossing. The oxidation device (ODD) is configured to oxidize cations of the metal to be electroplated onto the substrate, which cations are present in the anolyte during electroplating. In some embodiments, the ODD is implemented as a carbon anode that removes Cu(I) from the anolyte electrochemically. In other embodiments, the ODD is implemented as an oxygenation device (OGD) or an impressed current cathodic protection anode (ICCP anode), both of which increase oxygen concentration in anolyte solutions. Methods for efficient electroplating are also disclosed. | 10-31-2013 |
20140124361 | METHOD AND APPARATUS FOR FILLING INTERCONNECT STRUCTURES - Methods, apparatus, and systems for depositing copper and other metals are provided. In some implementations, a wafer substrate is provided to an apparatus. The wafer substrate has a surface with field regions and a feature. A copper layer is plated onto the surface of the wafer substrate. The copper layer is annealed to redistribute copper from regions of the wafer substrate to the feature. Implementations of the disclosed methods, apparatus, and systems allow for void-free bottom-up fill of features in a wafer substrate. | 05-08-2014 |
20140138239 | METHOD AND APPARATUS FOR FILLING INTERCONNECT STRUCTURES - Methods, apparatus, and systems for depositing copper and other metals are provided. In some implementations, a wafer substrate is provided to an apparatus. The wafer substrate has a surface with field regions and a feature. A copper layer is plated onto the surface of the wafer substrate. The copper layer is annealed to redistribute copper from regions of the wafer substrate to the feature. Implementations of the disclosed methods, apparatus, and systems allow for void-free bottom-up fill of features in a wafer substrate. | 05-22-2014 |
20140199497 | METHODS FOR REDUCING METAL OXIDE SURFACES TO MODIFIED METAL SURFACES - Method and apparatus for reducing metal oxide surfaces to modified metal surfaces are disclosed. Metal oxide surfaces are reduced to form a film integrated with a metal seed layer by contacting a solution with a reducing agent with the metal oxide surfaces. The solution with the reducing agent can contact the metal oxide surfaces under conditions that form an integrated film with the metal seed layer, and that reduces reoxidation from exposure the ambient environment. In some embodiments, an additive can be included with the reducing agent to form a surface protecting layer on the metal seed layer. In some embodiments, the metal is copper used in damascene copper structures. | 07-17-2014 |
20140256128 | METHOD AND APPARATUS FOR REMOTE PLASMA TREATMENT FOR REDUCING METAL OXIDES ON A METAL SEED LAYER - Method and apparatus for reducing metal oxide surfaces to modified metal surfaces are disclosed. By exposing a metal oxide surface to a remote plasma, the metal oxide surface on a substrate can be reduced to pure metal and the metal reflowed. A remote plasma apparatus can treat the metal oxide surface as well as cool, load/unload, and move the substrate within a single standalone apparatus. The remote plasma apparatus includes a processing chamber and a controller configured to provide a substrate having a metal seed layer in a processing chamber, form a remote plasma of a reducing gas species where the remote plasma includes radicals, ions, and/or ultraviolet (UV) radiation from the reducing gas species, and expose a metal seed layer of the substrate to the remote plasma to reduce oxide of the metal seed layer to metal and to reflow the metal. | 09-11-2014 |
20150053565 | BOTTOM-UP FILL IN DAMASCENE FEATURES - The embodiments herein relate to methods and apparatus for filling features with copper by a bottom-up fill mechanism without the use of organic plating additives. In some cases, filling occurs directly on a semi-noble metal layer, without the deposition of a copper seed layer. In other cases, the filling occurs on a copper seed layer. Factors such as the polarization of electrolyte, the use of a complexing agent, electrolyte pH, electrolyte temperature, and the waveform used to deposit material may contribute to promoting the bottom-up fill. | 02-26-2015 |
20150072538 | METHOD AND APPARATUS FOR REMOTE PLASMA TREATMENT FOR REDUCING METAL OXIDES ON A METAL SEED LAYER - Method and apparatus for reducing metal oxide surfaces to modified metal surfaces are disclosed. By exposing a metal oxide surface to a remote plasma, the metal oxide surface on a substrate is reduced. A remote plasma apparatus can treat the metal oxide surface as well as cool, load/unload, and move the substrate within a single standalone apparatus. The remote plasma apparatus includes a processing chamber and a controller configured to provide a substrate having a metal seed layer in a processing chamber, move the substrate towards a substrate support in the processing chamber, form a remote plasma of a reducing gas species, expose a metal seed layer of the substrate to the remote plasma, and expose the substrate to a cooling gas. In some embodiments, the remote plasma apparatus is part of an electroplating apparatus. | 03-12-2015 |
20150299886 | METHOD AND APPARATUS FOR PREPARING A SUBSTRATE WITH A SEMI-NOBLE METAL LAYER - Method and apparatus for preparing a substrate with a semi-noble metal layer are disclosed. The substrate can be pretreated so that a metal oxide surface on the semi-noble metal layer can be reduced to a modified metal surface integrated with the semi-noble metal layer. The substrate can be pretreated using a remote plasma treatment. A copper seed layer can be formed on the semi-noble metal layer using either an acidic or alkaline bath with a plating solution including either at least two copper complexing agents with varying dentacity or a single hexadentate copper complexing agent that is in excess of the copper source. The copper complexing agents can include a hexadentate ligand and a bidentate ligand. In some embodiments, a bulk layer of copper can be subsequently deposited on the copper seed layer using an acidic bath. | 10-22-2015 |