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| 20090075141 | HYBRID MEMBRANES, METHOD FOR PRODUCTION OF HYBRID MEMBRANES AND FUEL CELLS USING SUCH HYBRID MEMBRANES - The invention relates to hybrid membranes that are composed of an organic polymer and an inorganic polymer, a method for producing hybrid membranes, and the use of said hybrid membranes in polymer electrolyte membrane fuel cells. The inventive hybrid membranes comprise at least one alkaline organic polymer and at least one inorganic polymer. Said polymers are blended together at a molecular level. The inorganic polymer is formed from at least one precursor monomer when the membrane is produced. The disclosed membranes are characterized in that the same are provided with high absorptivity for doping agents, have a high degree of mechanical and thermal stability in both an undoped and doped state, and feature permanently high proton conductivity. | 03-19-2009 |
| 20100068593 | POLYMER ELECTROLYTE MEMBRANE WITH FUNCTIONALIZED NANOPARTICLES - The present invention relates to a polymer electrolyte membrane for fuel cells, comprising a polymer matrix of at least one basic polymer and one or more doping agents, wherein particles containing ionogenic groups and having a mean particle diameter in the nanometer range are embedded in the polymer matrix and the particles containing ionogenic groups are distributed homogeneously in the polymer matrix in a concentration of less than 50% relative to the weight of the polymer matrix, as well as to the production and use of same, especially in high-temperature fuel cells. | 03-18-2010 |
| 20110082222 | USE OF A MATERIAL IMPARTING PROTON CONDUCTIVITY IN THE PRODUCTION OF FUEL CELLS - The invention relates to the use of a material imparting proton conductivity in the production of fuel cells, said material consisting of monomer units and having an irregular shape. | 04-07-2011 |
| 20110091788 | GAS DIFFUSION ELECTRODES COMPRISING FUNCTIONALISED NANOPARTICLES - The invention relates to a gas diffusion electrode for polymer electrolyte fuel cells having a working temperature of up to 250° C., comprising a plurality of gas-permeable electroconductive layers having at least one gas diffusion layer and one catalyst layer. The catalyst layer contains particles of an average particle diameter in the nanometer range, said particles containing ionogenic groups. The invention also relates to the production of said gas diffusion electrode and to the use of same in high-temperature polymer electrolyte membrane fuel cells. | 04-21-2011 |
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| 20080248348 | Fuel-Cell Installation, Method For Activating and Deactivating Said Installation - The invention relates to a fuel-cell installation comprising: a reformer stage, which can be heated by a gas burner in order to carry out the water-vapour reformation of hydrocarbon and water-vapour into hydrogen and additional reformer products; at least one conversion stage, which is connected downstream of the reformer stage for the chemical preparation of the reformer products; and at least one fuel-cell stack, which is connected downstream of the conversion stage and comprises a plurality of anodes and cathodes with corresponding supply and discharge connections for converting the hydrogen into water to generate an electric current and heat. The fuel-cell stack is configured as a high-temperature fuel-cell stack with an operating temperature between about 100° C. and about 200° C., the conversion stage is connected on the output side, without heat exchange, to the supply connection of the anode of the fuel-cell stack and the discharge connection of the anode of the fuel-cell stack is connected to an air supply connection on the gas burner. During the activation and/or deactivation of the fuel-cell installation, the air that has flowed through the reformer stage and the conversion stage can be selectively supplied to the anode of the fuel cell stack. | 10-09-2008 |
| 20080305370 | FUEL CELL SYSTEM AND METHOD OF OPERATING A FUEL CELL - The invention provides an improved fuel cell system and a method of operating a fuel cell, which ensure that the fuel cell can be operated at high efficiency without irreversible damage. The fuel cell system according to the invention has at least one fuel cell with a fuel cell stack and with separator plates, which are equipped with inlets and outlets for a heat transfer medium, a thermostat, a heat transfer medium circuit, which has a transport device for the heat transfer medium and includes at least the fuel cell and the thermostat, at least one temperature sensor for the fuel cell and a monitoring and control unit for the temperature of the fuel cell. With the invention it is possible to operate the fuel cell in a range close to the preset optimum operating temperature. | 12-11-2008 |
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| 20090108336 | METHOD FOR ADJUSTING THE HEIGHT OF A GATE ELECTRODE IN A SEMICONDUCTOR DEVICE - By providing an implantation blocking material on the gate electrode structures of advanced semiconductor devices during high energy implantation processes, the required shielding effect with respect to the channel regions of the transistors may be accomplished. In a later manufacturing stage, the implantation blocking portion may be removed to reduce the gate electrode height to a desired level in order to enhance the process conditions during the deposition of an interlayer dielectric material, thereby significantly reducing the risk of creating irregularities, such as voids, in the interlayer dielectric material, even in densely packed device regions. | 04-30-2009 |
| 20090243049 | DOUBLE DEPOSITION OF A STRESS-INDUCING LAYER IN AN INTERLAYER DIELECTRIC WITH INTERMEDIATE STRESS RELAXATION IN A SEMICONDUCTOR DEVICE - Enhanced efficiency of a stress relaxation implantation process may be achieved by depositing a first layer of reduced thickness and relaxing the same at certain device regions, thereby obtaining an enhanced amount of substantially relaxed dielectric material in close proximity to the transistor under consideration, wherein a desired high amount of stressed dielectric material may be obtained above other transistors by performing a further deposition process. Hence, the negative effect of the highly stressed dielectric material for specific transistors, for instance in densely packed device regions, may be significantly reduced by depositing the highly stressed dielectric material in two steps with an intermediate relaxation implantation process. | 10-01-2009 |
| 20090294868 | DRIVE CURRENT ADJUSTMENT FOR TRANSISTORS FORMED IN THE SAME ACTIVE REGION BY LOCALLY INDUCING DIFFERENT LATERAL STRAIN LEVELS IN THE ACTIVE REGION - The drive current capability of a pull-down transistor and a pass transistor formed in a common active region may be adjusted on the basis of a strain-inducing mechanism, such as a stressed dielectric material and a stress memorization technique, thereby providing a simplified overall geometric configuration of the active region. Hence, static RAM cells may be formed on the basis of a minimum channel length with a simplified configuration of the active region, thereby avoiding significant yield losses as may be observed in sophisticated devices in which a pronounced variation of the transistor width may be used to adjust the ratio of the drive current capabilities for the pull-down transistor and the pass transistor. | 12-03-2009 |
| 20090321850 | Threshold adjustment for MOS devices by adapting a spacer width prior to implantation - Different threshold voltages of transistors of the same conductivity type in a complex integrated circuit may be adjusted on the basis of different Miller capacitances, which may be accomplished by appropriately adapting a spacer width and/or performing a tilted extension implantation. Thus, efficient process strategies may be available to controllably adjust the Miller capacitance, thereby providing enhanced transistor performance of low threshold transistors while not unduly contributing to process complexity compared to conventional approaches in which threshold voltage values may be adjusted on the basis of complex halo and well doping regimes. | 12-31-2009 |
| 20100078823 | CONTACTS AND VIAS OF A SEMICONDUCTOR DEVICE FORMED BY A HARD MASK AND DOUBLE EXPOSURE - A contact element may be formed on the basis of a hard mask, which may be patterned on the basis of a first resist mask and on the basis of a second resist mask, to define an appropriate intersection area which may represent the final design dimensions of the contact element. Consequently, each of the resist masks may be formed on the basis of a photolithography process with less restrictive constraints, since at least one of the lateral dimensions may be selected as a non-critical dimension in each of the two resist masks. | 04-01-2010 |
| 20100133628 | HIGH-K GATE ELECTRODE STRUCTURE FORMED AFTER TRANSISTOR FABRICATION BY USING A SPACER - During a replacement gate approach, the inverse tapering of the opening obtained after removal of the polysilicon material may be reduced by depositing a spacer layer and forming corresponding spacer elements on inner sidewalls of the opening. Consequently, the metal-containing gate electrode material and the high-k dielectric material may be deposited with enhanced reliability. | 06-03-2010 |
| 20100190309 | METHOD FOR ADJUSTING THE HEIGHT OF A GATE ELECTRODE IN A SEMICONDUCTOR DEVICE - By providing an implantation blocking material on the gate electrode structures of advanced semiconductor devices during high energy implantation processes, the required shielding effect with respect to the channel regions of the transistors may be accomplished. In a later manufacturing stage, the implantation blocking portion may be removed to reduce the gate electrode height to a desired level in order to enhance the process conditions during the deposition of an interlayer dielectric material, thereby significantly reducing the risk of creating irregularities, such as voids, in the interlayer dielectric material, even in densely packed device regions. | 07-29-2010 |
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| 20090180352 | Method for operating an ultrasonic sensor, and corresponding ultrasonic sensor - Operation of an ultrasonic sensor in duplex mode, and a method for operating an ultrasonic sensor in duplex mode, a corresponding ultrasonic sensor, and a corresponding device for controlling the ultrasonic sensor. A transmission trigger for triggering an acoustic transmitted signal is transmitted from the device for controlling the ultrasonic sensor to the ultrasonic sensor via a first duplex channel at a multiple of a resonance frequency of an ultrasonic converter in the ultrasonic sensor. The transmission trigger is divided down to the resonance frequency of the converter, using a divider in the ultrasonic sensor. At least one acoustic received signal which corresponds to the acoustic transmitted signal and which is delayed with respect to the reflection at an object due to the acoustic propagation time is converted by the ultrasonic sensor, using the converter, to an electrical received signal, and this electrical received signal is transmitted from the ultrasonic sensor to the device for controlling the ultrasonic sensor via a second duplex channel at the resonance frequency of the ultrasonic converter in the ultrasonic sensor. | 07-16-2009 |
| 20090219190 | Method and Device for Measuring the Distance and Relative Speed of Multiple Objects - A method and device are provided for measuring distance and relative speed of a plurality of objects with the aid of an FMCW radar, transmitted signals being reflected by objects, and the reflected signals being received and mixed with the transmitted signals. A combination of distance and relative speed values is assigned to the mixer output frequencies of each frequency ramp for each object, and the distance and relative speed of a possible object are determined from points of intersection of a plurality of distance and relative speed combinations. The apparent (unreal) objects are eliminated by modifying the frequency slope of at least one frequency ramp according to the random principle in a subsequent measurement cycle. | 09-03-2009 |
| 20090301205 | ULTRASONIC SENSOR - An ultrasonic sensor, in particular for a vehicle, including a housing, includes the following: a transducer element which is attached to the bottom of the housing for generating ultrasonic oscillations; a first damping element situated in the housing for damping oscillations of the bottom; and a cover for sealing the housing, the cover being provided with a second damping element and having continuous tapering of the cover thickness in the region of the second damping element. | 12-10-2009 |
| 20090314575 | HOLDING DEVICE FOR AN ULTRASONIC TRANSDUCER - A holding device for an ultrasonic transformer having a diaphragm cup, in particular for a motor vehicle, includes the following: a housing to accommodate the diaphragm cup; a decoupling component to position the diaphragm cup on the housing and on a holding section in vibration-damped manner; and a filler material to connect the diaphragm cup and the decoupling component to the housing in a vibration-damped and sealing, form-fitting manner, the decoupling component sealingly filling a gap between an edge of an opening of the housing and the diaphragm cup, as well as a corresponding method. | 12-24-2009 |
| 20100296692 | Ultrasonic transducer - An ultrasonic transducer includes: a diaphragm pot that has a surrounding wall; a transducer element mounted in a diaphragm pot on a transducer section on an inner side of the diaphragm for generating the ultrasonic vibrations; a first damping element situated in the diaphragm pot on transducer element for damping the diaphragm; and a second damping element situated within the diaphragm pot in an edge section of the diaphragm around the transducer element for damping vibrations of the wall; the second damping element being connected with force locking, at least section by section, both to the edge section and to the inner side of the wall. | 11-25-2010 |
| 20110102114 | Device And Method For Attenuating An Anti-Resonant Circuit - A device for the attenuation of an anti-resonant circuit which has a first capacitor and a secondary inductance. A signal is able to be coupled into the anti-resonant circuit via a primary inductance. An attenuator is connected in parallel to a switching device and to the secondary inductance and/or the primary inductanace. | 05-05-2011 |
