Patent application number | Description | Published |
20080309501 | Electronic System for Defence Against Fires in Forest Areas and More Generally for Monitoring the Territory - The invention refers to an electronic system for defence against fires in forest areas and more generally for monitoring the territory. The system comprises a network of alarm stations (SA) distributed over the territory being controlled, where each alarm station (SA) is enclosed in an air-scaled mechanically-sealed protective casing and comprises at least one sensor (S | 12-18-2008 |
20100137980 | Annular Prosthesis for a Mitral Valve - An annular prosthesis for a mitral valve that may include a posterior half-ring and an anterior half-ring coupled to each other on a first transverse plane which defines a maximum width section of the prosthesis. The ratio between the distance between the anterior half-ring and the posterior half-ring, as measured along a second plane, perpendicular to the first plane and equidistant to the couplings, and the maximum width of the prosthesis is lower than ¾. | 06-03-2010 |
20110301704 | Annuloplasty Rings for Repair of Abnormal Mitral Valves - A remodeling mitral annuloplasty ring with a reduced anterior-to-posterior dimension to restore coaptation between the mitral leaflets in mitral valve insufficiency (IMVI). The ring has a generally oval shaped body with a major axis perpendicular to a minor axis, both perpendicular to a blood flow axis. An anterior section lies between anteriolateral and posteriomedial trigones, while a posterior section defines the remaining ring body and is divided into P | 12-08-2011 |
20120046594 | BLOOD PROCESSING UNIT WITH MODIFIED FLOW PATH - A blood processing apparatus may include a heat exchanger and a gas exchanger. At least one of the heat exchanger and the gas exchanger may be configured to impart a radial component to blow flow through the heat exchanger and/or gas exchanger. The heat exchanger may be configured to cause blood flow to follow a spiral flow path. | 02-23-2012 |
20120172983 | METHODS OF REPAIRING AN ABNORMAL MITRAL VALVE - The present invention refers to an annular prosthesis for mitral valve. In one of its embodiments the annular prosthesis for mitral valve is made up of a posterior half-ring and an anterior half-ring coupled to each other on a first transverse plane which defines a maximum width section of the prosthesis, characterised in that the ratio between the distance between said anterior half-ring and said posterior half-ring, as measured along a second plane, perpendicular to said first plane and equidistant to said couplings, and said maximum width of the prosthesis is lower than 3/4. | 07-05-2012 |
Patent application number | Description | Published |
20110268609 | OXYGENATOR WITH INTEGRATED ARTERIAL FILTER INCLUDING FILTER FRAME - An oxygenator combines, in a single structure, a heat exchanger, a gas exchanger, an arterial filter, and a filter frame. Such an oxygenator permits fewer fluid connections and thus may simplify an extracorporeal blood circuit, including a heart-lung machine and a blood reservoir, in which it is used. In some embodiments, the oxygenator may be configured to include multiple purge ports for purging bubbles both before and after filtering the blood. | 11-03-2011 |
20120121463 | BLOOD PROCESSING UNIT WITH CIRCUMFERENTIAL BLOOD FLOW - A blood processing apparatus may include a heat exchanger and a gas exchanger. At least one of the heat exchanger and the gas exchanger may be configured to provide a circumferential blood flow through the heat exchanger and/or gas exchanger. | 05-17-2012 |
20130142695 | OXYGENATOR WITH INTEGRATED ARTERIAL FILTER INCLUDING FILTER FRAME - An oxygenator combines, in a single structure, a heat exchanger, a gas exchanger, an arterial filter, and a filter frame. Such an oxygenator permits fewer fluid connections and thus may simplify an extracorporeal blood circuit, including a heart-lung machine and a blood reservoir, in which it is used. In some embodiments, the oxygenator may be configured to include multiple purge ports for purging bubbles both before and after filtering the blood. | 06-06-2013 |
20130142696 | BLOOD PROCESSING UNIT WITH MODIFIED FLOW PATH - A blood processing apparatus may include a heat exchanger and a gas exchanger. At least one of the heat exchanger and the gas exchanger may be configured to impart a radial component to blow flow through the heat exchanger and/or gas exchanger. The heat exchanger may be configured to cause blood flow to follow a spiral flow path. | 06-06-2013 |
Patent application number | Description | Published |
20130126812 | Memory Cells, Integrated Devices, and Methods of Forming Memory Cells - Some embodiments include integrated devices, such as memory cells. The devices may include chalcogenide material, an electrically conductive material over the chalcogenide material, and a thermal sink between the electrically conductive material and the chalcogenide material. The thermal sink may be of a composition that includes an element in common with the electrically conductive material and includes an element in common with the chalcogenide material. Some embodiments include a method of forming a memory cell. Chalcogenide material may be formed over heater material. Electrically conductive material may be formed over the chalcogenide material. A thermal sink may be formed between the electrically conductive material and the chalcogenide material. The thermal sink may be of a composition that includes an element in common with the electrically conductive material and includes an element in common with the chalcogenide material. | 05-23-2013 |
20130146833 | MEMORY CELLS HAVING A PLURALITY OF HEATERS - Resistive memory cells having a plurality of heaters and methods of operating and forming the same are described herein. As an example, a resistive memory cell may include a resistance variable material located between a first electrode and a second electrode, a first heater coupled to a first portion of the resistance variable material, a second heater coupled to a second portion of the resistance variable material, a third heater coupled to a third portion of resistance variable material, and a conductive material coupled to the first, second, and third heaters. | 06-13-2013 |
20130187120 | MEMORY CELLS HAVING HEATERS WITH ANGLED SIDEWALLS - Memory cells having heaters with angled sidewalls and methods of forming the same are described herein. As an example, a method of forming an array of resistive memory cells can include forming a first resistive memory cell having a first heater element angled with respect to a vertical plane, forming a second resistive memory cell adjacent to the first resistive memory cell and having a second heater element angled with respect to the vertical plane and toward the first heater, and forming a third resistive memory cell adjacent to the first resistive memory cell and having a third heater element angled with respect to the vertical plane and away from the first heater element. | 07-25-2013 |
20130320288 | Semiconductor Constructions and Memory Arrays - Some embodiments include semiconductor constructions having an electrically conductive interconnect with an upper surface, and having an electrically conductive structure over the interconnect. The structure includes a horizontal first portion along the upper surface and a non-horizontal second portion joined to the first portion at a corner. The second portion has an upper edge. The upper edge is offset relative to the upper surface of the interconnect so that the upper edge is not directly over said upper surface. Some embodiments include memory arrays. | 12-05-2013 |
20130343119 | MEMORY PROGRAMMING TO REDUCE THERMAL DISTURB - A resistive memory array is programmed such that particular adjacent pairs of memory cells along a bit line having a back-to-back relationship are programmed together. The memory cells having the back-to-back relationship share a continuous chalcogenide material and a SiN material. | 12-26-2013 |
20140010005 | APPARATUSES AND/OR METHODS FOR OPERATING A MEMORY CELL AS AN ANTI-FUSE - Embodiments disclosed herein relate to operating a memory cell as an anti-fuse, such as for use in phase change memory, for example. | 01-09-2014 |
20140043894 | MEMORY CELLS HAVING A PLURALITY OF RESISTANCE VARIABLE MATERIALS - Resistance variable memory cells having a plurality of resistance variable materials and methods of operating and forming the same are described herein. As an example, a resistance variable memory cell can include a plurality of resistance variable materials located between a plug material and an electrode material. The resistance variable memory cell also includes a first conductive material that contacts the plug material and each of the plurality of resistance variable materials and a second conductive material that contacts the electrode material and each of the plurality of resistance variable materials. | 02-13-2014 |
20140110657 | MEMORY CONSTRUCTIONS - Some embodiments include memory constructions having a plurality of bands between top and bottom electrically conductive materials. The bands include chalcogenide bands alternating with non-chalcogenide bands. In some embodiments, there may be least two of the chalcogenide bands and at least one of the non-chalcogenide bands. In some embodiments, the memory cells may be between a pair of electrodes; with one of the electrodes being configured as a lance, angled plate, container or beam. In some embodiments, the memory cells may be electrically coupled with select devices, such as, for example, diodes, field effect transistors or bipolar junction transistors. | 04-24-2014 |
20140110658 | MEMORY CONSTRUCTIONS COMPRISING THIN FILMS OF PHASE CHANGE MATERIAL - Some embodiments include memory constructions having a film of phase change material between first and second materials; with the entirety of film having a thickness of less than or equal to about 10 nanometers. The memory constructions are configured to transit from one memory state having a first phase of the phase change material to a second memory state having a second phase of the phase change material, and are configured so that an entirety of the phase change material film changes from the first phase to the second phase in transitioning from the first memory state to the second memory state. In some embodiments, at least one of the first and second materials may be carbon, W, TiN, TaN or TiAlN. In some embodiments, at least one of the first and second materials may be part of a structure having bands of two or more different compositions. | 04-24-2014 |
20140206171 | Memory Cells, Integrated Devices, and Methods of Forming Memory Cells - Some embodiments include integrated devices, such as memory cells. The devices may include chalcogenide material, an electrically conductive material over the chalcogenide material, and a thermal sink between the electrically conductive material and the chalcogenide material. The thermal sink may be of a composition that includes an element in common with the electrically conductive material and includes an element in common with the chalcogenide material. Some embodiments include a method of forming a memory cell. Chalcogenide material may be formed over heater material. Electrically conductive material may be formed over the chalcogenide material. A thermal sink may be formed between the electrically conductive material and the chalcogenide material. The thermal sink may be of a composition that includes an element in common with the electrically conductive material and includes an element in common with the chalcogenide material. | 07-24-2014 |
20140209848 | Memory Constructions - Some embodiments include memory constructions having a plurality of bands between top and bottom electrically conductive materials. The bands include chalcogenide bands alternating with non-chalcogenide bands. In some embodiments, there may be least two of the chalcogenide bands and at least one of the non-chalcogenide bands. In some embodiments, the memory cells may be between a pair of electrodes; with one of the electrodes being configured as a lance, angled plate, container or beam. In some embodiments, the memory cells may be electrically coupled with select devices, such as, for example, diodes, field effect transistors or bipolar junction transistors. | 07-31-2014 |
20140319447 | Semiconductor Constructions and Memory Arrays - Some embodiments include semiconductor constructions having an electrically conductive interconnect with an upper surface, and having an electrically conductive structure over the interconnect. The structure includes a horizontal first portion along the upper surface and a non-horizontal second portion joined to the first portion at a corner. The second portion has an upper edge. The upper edge is offset relative to the upper surface of the interconnect so that the upper edge is not directly over said upper surface. Some embodiments include memory arrays. | 10-30-2014 |
20140346429 | Semiconductor Constructions and Methods of Forming Memory Cells - Some embodiments include semiconductor constructions having stacks containing electrically conductive material over dielectric material. Programmable material structures are directly against both the electrically conductive material and the dielectric material along sidewall surfaces of the stacks. Electrode material electrically coupled with the electrically conductive material of the stacks. Some embodiments include methods of forming memory cells in which a programmable material plate is formed along a sidewall surface of a stack containing electrically conductive material and dielectric material. | 11-27-2014 |
20150014623 | Memory Constructions - Some embodiments include memory constructions having a plurality of bands between top and bottom electrically conductive materials. The bands include chalcogenide bands alternating with non-chalcogenide bands. In some embodiments, there may be least two of the chalcogenide bands and at least one of the non-chalcogenide bands. In some embodiments, the memory cells may be between a pair of electrodes; with one of the electrodes being configured as a lance, angled plate, container or beam. In some embodiments, the memory cells may be electrically coupled with select devices, such as, for example, diodes, field effect transistors or bipolar junction transistors. | 01-15-2015 |
20150028283 | Methods of Forming Memory Cells and Arrays - Some embodiments include methods of forming memory cells. Heater structures are formed over an array of electrical nodes, and phase change material is formed across the heater structures. The phase change material is patterned into a plurality of confined structures, with the confined structures being in one-to-one correspondence with the heater structures and being spaced from one another by one or more insulative materials that entirely laterally surround each of the confined structures. Some embodiments include memory arrays having heater structures over an array of electrical nodes. Confined phase change material structures are over the heater structures and in one-to-one correspondence with the heater structures. The confined phase change material structures are spaced from one another by one or more insulative materials that entirely laterally surround each of the confined phase change material structures. | 01-29-2015 |