Patent application number | Description | Published |
20090294680 | ENERGY RESOLUTION IN SEMICONDUCTOR GAMMA RADIATION DETECTORS USING HETEROJUNCTIONS AND METHODS OF USE AND PREPARATION THEREOF - In one embodiment, a system comprises a semiconductor gamma detector material and a hole blocking layer adjacent the gamma detector material, the hole blocking layer resisting passage of holes therethrough. In another embodiment, a system comprises a semiconductor gamma detector material, and an electron blocking layer adjacent the gamma detector material, the electron blocking layer resisting passage of electrons therethrough, wherein the electron blocking layer comprises undoped HgCdTe. In another embodiment, a method comprises forming a hole blocking layer adjacent a semiconductor gamma detector material, the hole blocking layer resisting passage of holes therethrough. Additional systems and methods are also presented. | 12-03-2009 |
20120043632 | METHOD TO PLANARIZE THREE-DIMENSIONAL STRUCTURES TO ENABLE CONFORMAL ELECTRODES - Methods for fabricating three-dimentional PIN structures having conformal electrodes are provided, as well as the structures themselves. The structures include a first layer and an array of pillars with cavity regions between the pillars. A first end of each pillar is in contact with the first layer. A segment is formed on the second end of each pillar. The cavity regions are filled with a fill material, which may be a functional material such as a neutron sensitive material. The fill material covers each segment. A portion of the fill material is etched back to produce an exposed portion of the segment. A first electrode is deposited onto the fill material and each exposed segment, thereby forming a conductive layer that provides a common contact to each the exposed segment. A second electrode is deposited onto the first layer. | 02-23-2012 |
20120235260 | METHOD FOR MANUFACTURING SOLID-STATE THERMAL NEUTRON DETECTORS WITH SIMULTANEOUS HIGH THERMAL NEUTRON DETECTION EFFICIENCY (>50%) AND NEUTRON TO GAMMA DISCRIMINATION (>1.0E4) - Methods for manufacturing solid-state thermal neutron detectors with simultaneous high thermal neutron detection efficiency (>50%) and neutron to gamma discrimination (>10 | 09-20-2012 |
20130026364 | MIXED IONIC-ELECTRONIC CONDUCTOR-BASED RADIATION DETECTORS AND METHODS OF FABRICATION - A method of fabricating a mixed ionic-electronic conductor (e.g. TlBr)-based radiation detector having halide-treated surfaces and associated methods of fabrication, which controls polarization of the mixed ionic-electronic MIEC material to improve stability and operational lifetime. | 01-31-2013 |
20130075848 | THREE-DIMENSIONAL BORON PARTICLE LOADED THERMAL NEUTRON DETECTOR - Three-dimensional boron particle loaded thermal neutron detectors utilize neutron sensitive conversion materials in the form of nano-powders and micro-sized particles, as opposed to thin films, suspensions, paraffin, etc. More specifically, methods to infiltrate, intersperse and embed the neutron nano-powders to form two-dimensional and/or three-dimensional charge sensitive platforms are specified. The use of nano-powders enables conformal contact with the entire charge-collecting structure regardless of its shape or configuration. | 03-28-2013 |
20130187056 | STRESS REDUCTION FOR PILLAR FILLED STRUCTURES - According to one embodiment, an apparatus for detecting neutrons includes an array of pillars, wherein each of the pillars comprises a rounded cross sectional shape where the cross section is taken perpendicular to a longitudinal axis of the respective pillar, a cavity region between each of the pillars, and a neutron sensitive material located in each cavity region. | 07-25-2013 |
20130334541 | THREE DIMENSIONAL STRAINED SEMICONDUCTORS - In one embodiment, an apparatus includes a three dimensional structure comprising a semiconductor material, and at least one thin film in contact with at least one exterior surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the three dimensional structure. In another embodiment, a method includes forming a three dimensional structure comprising a semiconductor material, and depositing at least one thin film on at least one surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the structure. | 12-19-2013 |
20140264256 | THREE DIMENSIONAL RADIOISOTOPE BATTERY AND METHODS OF MAKING THE SAME - According to one embodiment, a product includes an array of three dimensional structures, where each of the three dimensional structure includes a semiconductor material; a cavity region between each of the three dimensional structures; and a first material in contact with at least one surface of each of the three dimensional structures, where the first material is configured to provide high energy particle and/or ray emissions. | 09-18-2014 |