Patent application number | Description | Published |
20080197414 | METHOD OF FORMING A THIN FILM COMPONENT - Embodiments of methods, apparatuses, devices, and/or systems for forming a thin film component are described. | 08-21-2008 |
20090035899 | Microelectronic device - A thin film transistor is manufactured by a process including forming an oxide semiconductor channel, patterning the oxide semiconductor channel with a photolithographic process, and exposing the patterned oxide semiconductor channel to an oxygen containing plasma. | 02-05-2009 |
20090289250 | System And Method For Manufacturing A Thin-film Device - A thin-film device includes a plurality of circuit components defining an operational region of the thin-film device, an unpatterned channel portion ( | 11-26-2009 |
20100044698 | Semiconductor Film Composition - A semiconductor film composition includes an oxide semiconductor material. At least one polyatomic ion is incorporated into the oxide semiconductor material. | 02-25-2010 |
20100244017 | THIN-FILM TRANSISTOR (TFT) WITH AN EXTENDED OXIDE CHANNEL - In at least some embodiments, a thin-film transistor (TFT) includes a gate electrode and a gate dielectric adjacent the gate electrode. The TFT also includes a source electrode at least partially aligned with the gate electrode and separated from the gate electrode by the gate dielectric. The TFT also includes a drain electrode laterally offset from the gate electrode by at least 2 μm and separated from the gate electrode by the gate dielectric. The TFT also includes an extended oxide channel between the source electrode and the drain electrode, wherein a portion of the extended oxide channel is ungated. | 09-30-2010 |
20120012840 | Thin-film Transistor (TFT) With A Bi-layer Channel - In at least some embodiments, a thin-film transistor (TFT) includes a gate electrode and a gate dielectric covering the gate dielectric. The TFT also includes a source electrode and a drain electrode adjacent the gate dielectric. The TFT also includes a bi-layer channel between the source electrode and the drain electrode, the bi-layer channel having a zinc indium oxide (ZIO) layer positioned adjacent the gate dielectric and a zinc tin oxide (ZTO) layer that covers the ZIO layer. | 01-19-2012 |
20130004811 | BATTERY TEMPERATURE SENSOR - A battery temperature sensor may include a substrate and a thin film resistive temperature device (RTD). The substrate can be layered on a battery cell element. The battery cell element can be an anode, a cathode, and a separator between the anode and cathode used in a battery cell. The thin film resistive temperature device (RTD) on the flexible substrate can change resistance with a change in temperature. A battery cell housing can enclose the thin film RTD. | 01-03-2013 |
20130092931 | THIN FILM TRANSISTORS - A thin-film transistor includes a gate electrode, a gate dielectric disposed on the gate electrode, a channel layer, and a passivation layer. The channel layer has a first surface and an opposed second surface, where the first surface is disposed over at least a portion of the gate dielectric. The channel layer also has a first oxide composition including at least one predetermined cation. The passivation layer is disposed adjacent to at least a portion of the opposed second surface of the channel layer. The passivation layer has a second oxide composition including the at least one predetermined cation of the first oxide composition and at least one additional cation that increases a bandgap of the passivation layer relative to the channel layer. | 04-18-2013 |
20140319972 | FILM STACK INCLUDING ADHESIVE LAYER - An example provides an apparatus including a substrate, a metal layer, and an adhesive layer adhered between the substrate and the metal layer, the adhesive layer comprising zinc-gallium oxide, zinc-indium oxide, zinc-gallium-tin oxide, or zinc-indium-tin oxide. | 10-30-2014 |
20140322523 | FILM STACK INCLUDING ADHESIVE LAYER - An example provides an apparatus including a substrate, a metal layer, and an adhesive layer adhered between the substrate and the metal layer, the adhesive layer comprising indium oxide, tin oxide, gallium oxide, indium-tin oxide, indium-gallium oxide, tin-gallium oxide, or indium-tin-gallium oxide. | 10-30-2014 |