Patent application number | Description | Published |
20090199394 | Flexible Cathodes - This disclosure relates to methods of making a cathode for a lithium batter. The methods include: (a) treating a cathode current collector with flame or corona; (b) coating a slurry containing iron disulfide, a first solvent, and a binder onto the cathode current collector obtained from step (a) to form a coated cathode current collector, in which the slurry contains about 73-75% by weight solids and the binder contains a polymer selected from the group consisting of linear di- and tri-block copolymers, linear tri-block copolymers cross-linked with melamine resin, ethylene-propylene copolymers, ethylene-propylene-diene terpolymers, tri-block fluorinated thermoplastics, hydrogenated nitrile rubbers, fluoro-ethylene-vinyl ether copolymers, thermoplastic polyurethanes, thermoplastic olefins, and polyvinylidene fluoride homopolymers; and (c) drying the coated cathode current collector obtained from step (b) to provide a cathode, in which the cathode contains no more than 0.5% by volume of the first solvent and is capable of being bent to 180°. This disclosure also relates to methods of making a lithium battery. | 08-13-2009 |
20100236056 | Flexible Cathodes - This disclosure relates to methods of making a cathode for a lithium batter. The methods include: (a) treating a cathode current collector with flame or corona; (b) coating a slurry containing iron disulfide, a first solvent, and a binder onto the cathode current collector obtained from step (a) to form a coated cathode current collector, in which the slurry contains about 73-75% by weight solids and the binder contains a polymer selected from the group consisting of linear di- and tri-block copolymers, linear tri-block copolymers cross-linked with melamine resin, ethylene-propylene copolymers, ethylene-propylene-diene terpolymers, tri-block fluorinated thermoplastics, hydrogenated nitrile rubbers, fluoro-ethylene-vinyl ether copolymers, thermoplastic polyurethanes, thermoplastic olefins, and polyvinylidene fluoride homopolymers; and (c) drying the coated cathode current collector obtained from step (b) to provide a cathode, in which the cathode contains no more than 0.5% by volume of the first solvent and is capable of being bent to 180°. This disclosure also relates to methods of making a lithium battery. | 09-23-2010 |
20110254509 | Flexible Cathodes - This disclosure relates to methods of making a cathode for a lithium batter. The batterys include: (a) treating a cathode current collector with flame or corona; (b) coating a slurry containing iron disulfide, a first solvent, and a binder onto the cathode current collector obtained from step (a) to form a coated cathode current collector, in which the slurry contains about 73-75% by weight solids and the binder contains a polymer selected from the group consisting of linear di- and tri-block copolymers, linear tri-block copolymers cross-linked with melamine resin, ethylene-propylene copolymers, ethylene-propylene-diene terpolymers, tri-block fluorinated thermoplastics, hydrogenated nitrile rubbers, fluoro-ethylene-vinyl ether copolymers, thermoplastic polyurethanes, thermoplastic olefins, and polyvinylidene fluoride homopolymers; and (c) drying the coated cathode current collector obtained from step (b) to provide a cathode, in which the cathode contains no more than 0.5% by volume of the first solvent and is capable of being bent to 180°. This disclosure also relates to methods of making a lithium battery. | 10-20-2011 |
Patent application number | Description | Published |
20080199545 | Anti-resorptive and bone building dietary supplements and methods of use - Disclosed herein are dietary supplement compositions and methods for increasing or stimulating bone growth, decreasing or preventing bone resorption, increasing bone strength, improving bone structure, and improving bone architecture comprising a first composition comprising a combination of at least two of: quercetin, | 08-21-2008 |
20080199546 | Anti-resorptive and bone building dietary supplements and methods of use - Disclosed herein are dietary supplement compositions and methods for increasing or stimulating bone growth and, decreasing or preventing bone resorption comprising a first composition comprising a combination of at least two of: quercetin, | 08-21-2008 |
20100112105 | Antimicrobial efficacy of aframomum Melegueta extract against propionibacterium acnes - The use of compositions containing one or more phytochemicals such as gingerols, paradols, and mixtures thereof for aiding in the control, reduction or elimination of | 05-06-2010 |
20110038968 | Topical Composition with Skin Lightening Effect - A topical cosmetic composition for increasing skin whitening or lightening is described. The composition includes a pomegranate extract in an amount effective to reduce melanin composition. The pomegranate extract may be standardized to about 20% punicalagin. The composition may also include an extract from the genus | 02-17-2011 |
20110123471 | Topical Composition with Skin Lightening Effect - A topical cosmetic composition for increasing skin whitening or lightening is described. The composition includes a pomegranate extract in an amount effective to reduce melanin composition. The pomegranate extract may be standardized to about 20% punicalagin. The composition may also include an extract from the genus | 05-26-2011 |
20110212201 | Skin Whitening Composition Containing Chia Seed Extract - A topical composition includes an alcohol-extracted | 09-01-2011 |
20130196009 | ANTI-INFLAMMATORY AND ANTIOXIDANT COMPOSITION AND RELATED METHOD OF USE - A composition having at least one of a high antioxidant capacity, an anti-inflammatory effect and/or a DNA protection function is provided. The composition includes an extract from plants of the genus | 08-01-2013 |
20130302265 | TOPICAL COMPOSITION AND METHOD FOR SKIN LIGHTENING - A topical cosmetic composition for skin whitening or skin lightening is described. The composition includes an aqueous extract of | 11-14-2013 |
20140154194 | Skin Whitening Composition Containing Chia Seed Extract - A topical composition includes an alcohol-extracted | 06-05-2014 |
20140377386 | PLANT-BASED INHIBITORS OF KETOHEXOKINASE FOR THE SUPPORT OF WEIGHT MANAGEMENT - A composition for inhibiting ketohexokinase, for example, ketohexokinase-C (KHK-C) activity, may include a plant extract exhibiting at least IC50 (i.e., 50% KHK-C inhibition at a concentration in the range of from about 0.1 μg/mL to about 1000 μg/mL. The composition may be in a form suitable for oral ingestion. A method for inhibiting KHK-C activity in a subject may include administering a plant extract that exhibits at least 50% KHK-C inhibition at a concentration from about 0.1 μg/mL to about 1000 μg/mL. The administering may be done to treat or prevent at least one of sugar addiction, obesity, or metabolic syndrome. The administering may be done to provide a diminished craving in the subject from at least one member selected from the group consisting of craving of sugar, fructose, fructose-containing sugars, carbohydrates, and combinations thereof. The subject may be pre-diabetic, diabetic and or insulin resistant. | 12-25-2014 |
Patent application number | Description | Published |
20130200501 | IN-SITU ACTIVE WAFER CHARGE SCREENING BY CONFORMAL GROUNDING - Embodiments of the invention relate generally to semiconductor wafer technology and, more particularly, to the use of conformal grounding for active charge screening on wafers during wafer processing and metrology. A first aspect of the invention provides a method of reducing an accumulated surface charge on a semiconductor wafer, the method comprising: grounding a layer of conductive material adjacent a substrate of the wafer; and allowing a mirrored charge substantially equal in magnitude and opposite in sign to the accumulated surface charge to be induced along the conductive material. | 08-08-2013 |
20130203188 | HYBRID METROLOGY FOR SEMICONDUCTOR DEVICES - Methods and systems are provided for fabricating and measuring physical features of a semiconductor device structure. An exemplary method of fabricating a semiconductor device structure involves forming a first feature of the semiconductor device structure on a substrate of semiconductor material, obtaining a first measurement for the semiconductor device structure from a first metrology tool, obtaining a second measurement of the first feature of the semiconductor device structure from a second metrology tool, and determining a hybrid measurement for the first feature based at least in part on the first measurement and the second measurement. | 08-08-2013 |
20140073114 | IN-SITU ACTIVE WAFER CHARGE SCREENING BY CONFORMAL GROUNDING - Embodiments of the invention relate generally to semiconductor wafer technology and, more particularly, to the use of conformal grounding for active charge screening on wafers during wafer processing and metrology. A first aspect of the invention provides a method of reducing an accumulated surface charge on a semiconductor wafer, the method comprising: grounding a layer of conductive material adjacent a substrate of the wafer; and allowing a mirrored charge substantially equal in magnitude and opposite in sign to the accumulated surface charge to be induced along the conductive material. | 03-13-2014 |
Patent application number | Description | Published |
20100099232 | Methods Of Forming Capacitors, And Methods Of Utilizing Silicon Dioxide-Containing Masking Structures - Some embodiments include methods of forming capacitors. Storage nodes are formed within a material. The storage nodes have sidewalls along the material. Some of the material is removed to expose portions of the sidewalls. The exposed portions of the sidewalls are coated with a substance that isn't wetted by water. Additional material is removed to expose uncoated regions of the sidewalls. The substance is removed, and then capacitor dielectric material is formed along the sidewalls of the storage nodes. Capacitor electrode material is then formed over the capacitor dielectric material. Some embodiments include methods of utilizing a silicon dioxide-containing masking structure in which the silicon dioxide of the masking structure is coated with a substance that isn't wetted by water. | 04-22-2010 |
20100330768 | METHODS FOR ETCHING DOPED OXIDES IN THE MANUFACTURE OF MICROFEATURE DEVICES - Methods for selectively etching doped oxides in the manufacture of microfeature devices are disclosed herein. An embodiment of one such method for etching material on a microfeature workpiece includes providing a microfeature workpiece including a doped oxide layer and a nitride layer adjacent to the doped oxide layer. The method include selectively etching the doped oxide layer with an etchant comprising DI:HF and an acid to provide a pH of the etchant such that the etchant includes (a) a selectivity of phosphosilicate glass (PSG) to nitride of greater than 250:1, and (b) an etch rate through PSG of greater than 9,000 Å/minute. | 12-30-2010 |
20110111597 | Methods of Utilizing Silicon Dioxide-Containing Masking Structures - Some embodiments include methods of forming capacitors. Storage nodes are formed within a material. The storage nodes have sidewalls along the material. Some of the material is removed to expose portions of the sidewalls. The exposed portions of the sidewalls are coated with a substance that isn't wetted by water. Additional material is removed to expose uncoated regions of the sidewalls. The substance is removed, and then capacitor dielectric material is formed along the sidewalls of the storage nodes. Capacitor electrode material is then formed over the capacitor dielectric material. Some embodiments include methods of utilizing a silicon dioxide-containing masking structure in which the silicon dioxide of the masking structure is coated with a substance that isn't wetted by water. | 05-12-2011 |
20110143543 | Method of Forming Capacitors, and Methods of Utilizing Silicon Dioxide-Containing Masking Structures - Some embodiments include methods of forming capacitors. Storage nodes are formed within a material. The storage nodes have sidewalls along the material. Some of the material is removed to expose portions of the sidewalls. The exposed portions of the sidewalls are coated with a substance that isn't wetted by water. Additional material is removed to expose uncoated regions of the sidewalls. The substance is removed, and then capacitor dielectric material is formed along the sidewalls of the storage nodes. Capacitor electrode material is then formed over the capacitor dielectric material. Some embodiments include methods of utilizing a silicon dioxide-containing masking structure in which the silicon dioxide of the masking structure is coated with a substance that isn't wetted by water. | 06-16-2011 |
20110180828 | SOLID STATE LIGHTING DEVICES AND ASSOCIATED METHODS OF MANUFACTURING - Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state light device includes a light emitting diode with an N-type gallium nitride (GaN) material, a P-type GaN material spaced apart from the N-type GaN material, and an indium gallium nitride (InGaN) material directly between the N-type GaN material and the P-type GaN material. At least one of the N-type GaN, InGaN, and P-type GaN materials has a non-planar surface. | 07-28-2011 |
20120161151 | SOLID STATE LIGHTING DEVICES AND ASSOCIATED METHODS OF MANUFACTURING - Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state light device includes a light emitting diode with an N-type gallium nitride (GaN) material, a P-type GaN material spaced apart from the N-type GaN material, and an indium gallium nitride (InGaN) material directly between the N-type GaN material and the P-type GaN material. At least one of the N-type GaN, InGaN, and P-type GaN materials has a non-planar surface. | 06-28-2012 |
20120178257 | SOLUTIONS FOR CLEANING SEMICONDUCTOR STRUCTURES AND RELATED METHODS - A method for cleaning a semiconductor structure includes subjecting a semiconductor structure to an aqueous solution including at least one fluorine compound, and at least one strong acid, the aqueous solution having a pH of less than 1. In one embodiment, the aqueous solution includes water, hydrochloric acid, and hydrofluoric acid at a volumetric ratio of water to hydrochloric acid to hydrofluoric acid of 1000:32.5:1. The aqueous solution may be used to form a contact plug that has better contact resistance and improved critical dimension bias than conventional cleaning solutions. | 07-12-2012 |
20120276748 | METHODS FOR ETCHING DOPED OXIDES IN THE MANUFACTURE OF MICROFEATURE DEVICES - Methods for selectively etching doped oxides in the manufacture of microfeature devices are disclosed herein. An embodiment of one such method for etching material on a microfeature workpiece includes providing a microfeature workpiece including a doped oxide layer and a nitride layer adjacent to the doped oxide layer. The method include selectively etching the doped oxide layer with an etchant comprising DI:HF and an acid to provide a pH of the etchant such that the etchant includes (a) a selectivity of phosphosilicate glass (PSG) to nitride of greater than 250:1, and (b) an etch rate through PSG of greater than 9,000 Å/minute. | 11-01-2012 |
20130288416 | SOLID STATE LIGHTING DEVICES AND ASSOCIATED METHODS OF MANUFACTURING - Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state light device includes a light emitting diode with an N-type gallium nitride (GaN) material, a P-type GaN material spaced apart from the N-type GaN material, and an indium gallium nitride (InGaN) material directly between the N-type GaN material and the P-type GaN material. At least one of the N-type GaN, InGaN, and P-type GaN materials has a non-planar surface. | 10-31-2013 |
Patent application number | Description | Published |
20090305511 | Methods of Treating Semiconductor Substrates, Methods Of Forming Openings During Semiconductor Fabrication, And Methods Of Removing Particles From Over Semiconductor Substrates - Some embodiments include methods of treating semiconductor substrates. The substrates may be exposed to one or more conditions that vary continuously. The conditions may include temperature gradients, concentration gradients of one or more compositions that quench etchant, pH gradients to assist in removing particles, and/or concentration gradients of one or more compositions that assist in removing particles. The continuously varying conditions may be imparted by placing the semiconductor substrates in a bath of flowing rinsing solution, with the bath having at least two feed lines that provide the rinsing solution therein. One of the feed lines may be at a first condition, and the other may be at a second condition that is different from the first condition. The relative amount of rinsing solution provided to the bath by each feed line may be varied to continuously vary the condition within the bath. | 12-10-2009 |
20100221916 | Methods of Etching Oxide, Reducing Roughness, and Forming Capacitor Constructions - The invention includes methods in which one or more components of a carboxylic acid having an aqueous acidic dissociation constant of at least 1×10 | 09-02-2010 |
20130040429 | METHODS OF FORMING CHARGE STORAGE STRUCTURES INCLUDING ETCHING DIFFUSED REGIONS TO FORM RECESSES - Methods are disclosed that include selectively etching diffused regions to form recesses in semiconductor material, and forming charge storage structures in the recesses. Additional embodiments are disclosed. | 02-14-2013 |
20130164902 | Methods Of Forming Capacitors - A method of forming capacitors includes forming support material over a substrate. A first capacitor electrode is formed within individual openings in the support material. A first etching is conducted only partially into the support material using a liquid etching fluid to expose an elevationally outer portion of sidewalls of individual of the first capacitor electrodes. A second etching is conducted into the support material using a dry etching fluid to expose an elevationally inner portion of the sidewalls of the individual first capacitor electrodes. A capacitor dielectric is formed over the outer and inner portions of the sidewalls of the first capacitor electrodes. A second capacitor electrode is formed over the capacitor dielectric. | 06-27-2013 |
20130302995 | Methods Of Treating Semiconductor Substrates, Methods Of Forming Openings During Semiconductor Fabrication, And Methods Of Removing Particles From Over Semiconductor Substrates - Some embodiments include methods of treating semiconductor substrates. The substrates may be exposed to one or more conditions that vary continuously. The conditions may include temperature gradients, concentration gradients of one or more compositions that quench etchant, pH gradients to assist in removing particles, and/or concentration gradients of one or more compositions that assist in removing particles. The continuously varying conditions may be imparted by placing the semiconductor substrates in a bath of flowing rinsing solution, with the bath having at least two feed lines that provide the rinsing solution therein. One of the feed lines may be at a first condition, and the other may be at a second condition that is different from the first condition. The relative amount of rinsing solution provided to the bath by each feed line may be varied to continuously vary the condition within the bath. | 11-14-2013 |
20140349454 | METHODS OF FORMING CHARGE STORAGE STRUCTURES INCLUDING ETCHING DIFFUSED REGIONS TO FORM RECESSES - Methods are disclosed that include selectively etching diffused regions to form recesses in semiconductor material, and forming charge storage structures in the recesses. Additional embodiments are disclosed. | 11-27-2014 |
20150126016 | Methods of Forming Capacitors - A method of forming capacitors includes forming support material over a substrate. A first capacitor electrode is formed within individual openings in the support material. A first etching is conducted only partially into the support material using a liquid etching fluid to expose an elevationally outer portion of sidewalls of individual of the first capacitor electrodes. A second etching is conducted into the support material using a dry etching fluid to expose an elevationally inner portion of the sidewalls of the individual first capacitor electrodes. A capacitor dielectric is formed over the outer and inner portions of the sidewalls of the first capacitor electrodes. A second capacitor electrode is formed over the capacitor dielectric. | 05-07-2015 |
Patent application number | Description | Published |
20080264988 | RETRACTABLE CROSSBOW ROOF RACK - A roof-rack assembly for a vehicle includes a roof having a first support member extending along a length thereof. A second support member is spaced apart from the first support member and extends along a length of the roof. At least one cross-member extends between and is attached to the first support member and the second support member and is movable between a use position and a stowed position relative to the roof. The at least one cross-member extends away from a surface of the roof in the use position and is received generally within the roof in the stowed position. | 10-30-2008 |
20080284192 | VEHICLE CARGO FLOOR ORGANIZER - The technology described herein provides a slidable, retractable, and foldable cargo floor organizer with a rotatable and extensible retention net frame and associated cargo retention net for the rear cargo floor area of a vehicle. The system additionally provides an interior cargo tray having multiple partitions. The system includes a cargo retention net frame disposed about the interior cargo tray, wherein the cargo retention net frame is extensible, and a cargo retention net, the cargo retention net being disposed about the retention net frame, and wherein the cargo retention net is extensible and extends as the cargo retention net frame extends. The system provides for the secure containment of cargo in the rear cargo floor area of a vehicle. | 11-20-2008 |
20090065988 | MULTIPLE STOP GAS COMPRESSION SPRING - A gas compression spring is mounted with an exterior element configured to allow a user to adjust the extension of the spring by rotating or sliding the exterior element. The user can line up an internal mechanism which is configured to limit the extension of the gas spring, and therefore stop the extension of the gas spring at a predetermined height. Additionally, an override mechanism is included where a user requires full extension of the gas spring. For example, the user can override the internal mechanism by applying a force in the direction of the extension, which disengages the mechanism allowing full extension. When the spring is compressed again, the mechanism resets and opens to the predetermined height. The gas spring can be utilized in a vehicle liftgate system, allowing the liftgate to open at one or more heights based upon the internal mechanism settings of the gas spring. | 03-12-2009 |
20130147222 | STORAGE COMPARTMENT IN THE PILLAR OF A VEHICLE - A storage compartment integrated into a pillar of a vehicle that may be enclosed by a movable door accessible from an exterior of the vehicle. The door may support at least one audio speaker such that if the door is closed, the audio speaker may act as an interior audio speaker, and if the door is opened, the audio speaker may act as an exterior audio speaker. | 06-13-2013 |
20130154555 | SLIDING WIRELESS CHARGING TRAY FOR INDUCTIVE CHARGING OF ELECTRONIC DEVICES - The present invention relates to a sliding tray comprising: a base panel; a top panel at least partially offset from the base panel, creating a local pocket therebetween; a battery recharging system disposed within the local pocket and adapted to provide one or more electromagnetic fields capable of transferring an electrical charge to a properly equipped portable electrical device; an electrical connection feature adapted to electrically connect the battery recharging system to a host; a tray sliding feature disposed on the base panel, the top panel, or both adapted to mate with a bin sliding feature of a bin and allowing for the sliding tray to move relative to the bin. | 06-20-2013 |
Patent application number | Description | Published |
20090175733 | AIR COOLED TURBINE BLADES AND METHODS OF MANUFACTURING - An air-cooled turbine blade and methods of manufacturing the blade are provided. The blade includes a suction side flow circuit formed within its interior and defined at least by an interior surface of a convex suction side wall, a pressure side flow circuit formed within the blade interior and defined at least by an interior surface of a concave pressure side wall, and a center flow circuit including a first section and a second section, the first section disposed between the suction side flow circuit and the pressure side flow circuit, and the second section in flow communication with the first section and a plurality of openings of a leading edge wall and defined at least partially by an interior surface of the leading edge wall. | 07-09-2009 |
20130280036 | AXIALLY-SPLIT RADIAL TURBINE - An axially-split radial turbine includes a forward rotor section and an aft rotor section being mechanically and abuttingly coupled to one another along an annular interface that resides within a plane generally orthogonal to a rotational axis of the axially-split radial turbine. The axially-split radial turbine can be provided as part of a gas turbine engine. | 10-24-2013 |
20130294889 | GAS TURBINE ENGINE COMPONENTS WITH FILM COOLING HOLES HAVING CYLINDRICAL TO MULTI-LOBE CONFIGURATIONS - An engine component includes a body; and a plurality of cooling holes formed in the body, at least one of the cooling holes having a multi-lobed shape with at least a first lobe, a second lobe, and a third lobe. | 11-07-2013 |
20140154096 | TURBINE BLADE AIRFOILS INCLUDING SHOWERHEAD FILM COOLING SYSTEMS, AND METHODS FOR FORMING AN IMPROVED SHOWERHEAD FILM COOLED AIRFOIL OF A TURBINE BLADE - Turbine blade airfoils, showerhead film cooling systems thereof, and methods for cooling the turbine blade airfoils using the same are provided. The airfoil has a leading edge and a trailing edge, a pressure sidewall and a suction sidewall both extending between the leading and the trailing edges, and an internal cavity for supplying cooling air. A showerhead of film cooling holes is connected to the internal cavity. Each film cooling hole has an inlet connected to the internal cavity and an outlet opening onto an external wall surface at the leading edge of the airfoil. A plurality of surface connectors is formed in the external wall surface. Each surface connector of the plurality of surface connectors interconnects the outlets of at least one selected pair of the film cooling holes. | 06-05-2014 |
20140321965 | TURBINE NOZZLES AND METHODS OF MANUFACTURING THE SAME - A turbine nozzle assembly includes an inner circumferential support platform, an outer circumferential support platform, and a plurality of airfoil vanes disposed between the inner circumferential support platform and the outer circumferential support platform. The turbine nozzle assembly further includes a plurality of impingement plates disposed along a radially outer surface of the outer circumferential support platform or a radially inner surface of the inner circumferential support platform, and a plurality of gap-maintaining features disposed between the plurality of outer or inner circumferential support platforms and the plurality of impingement plates. Each gap-maintaining feature of the plurality of gap-maintaining features is provided at a height such that a cooling air flow space is maintained between the plurality of outer or inner circumferential support platforms and the plurality of impingement plates. | 10-30-2014 |
20140356188 | TURBINE BLADE AIRFOILS INCLUDING FILM COOLING SYSTEMS, AND METHODS FOR FORMING AN IMPROVED FILM COOLED AIRFOIL OF A TURBINE BLADE - Turbine blade airfoils, film cooling systems thereof, and methods for forming improved film cooled components are provided. The turbine blade airfoil has an external wall surface and comprises leading and trailing edges, pressure and suction sidewalls both extending between the leading and the trailing edges, an internal cavity, one or more isolation trenches in the external wall surface, a plurality of film cooling holes arranged in cooling rows, and a plurality of span-wise surface connectors interconnecting the outlets of the film cooling holes in the same cooling row to form a plurality of rows of interconnected film cooling holes. Each film cooling hole has an inlet connected to the internal cavity and an outlet opening onto the external wall surface. The span-wise surface connectors in at least one selected row of interconnected film cooling holes are disposed in the one or more isolation trenches. | 12-04-2014 |
Patent application number | Description | Published |
20120066197 | Hybrid Query System for Electronic Medical Records - An electronic medical record employs a hybrid search engine which can perform structured queries for comprehensive search results and text searches for rapid identification of relevant information. A standard structured database of medical data is rendered accessible to text searches by generating pseudo-documents from the database that can then be subjected to standard information retrieval pre-processing. | 03-15-2012 |
20120221353 | Medical Workflow Queue For Distributed Data Entry - A system for facilitating patient data entry for mobile physicians provides for a task queue allowing partial data entry on different devices during the day according to the comparative advantage of the device. Thus, for example, a patient note may be prepared at an office terminal and some transcription added at a later time as dictated into a cell phone or the like. The queue structure provides informational cues to the physician to remind him or her of later data entry tasks and permits seamless integration of fragmented data entry into a common record. | 08-30-2012 |
20120253801 | AUTOMATIC DETERMINATION OF AND RESPONSE TO A TOPIC OF A CONVERSATION - A system, computer-readable medium, and method for automatically determining a topic of a conversation and responding to the topic determination are provided. In the method, an active topic is defined as a first topic in response to execution of an application. The first topic includes first text defining a plurality of phrases, a probability of occurrence associated with each of the plurality of phrases, and a response associated with each of the plurality of phrases. Speech text recognized from a recorded audio signal is received. Recognition of the speech text is based at least partially on the probability of occurrence associated with each of the plurality of phrases of the first topic. A phrase of the plurality of phrases associated with the received speech text is identified. The response associated with the identified phrase is performed by the computing device. The response includes instructions defining an action triggered by occurrence of the received speech text, wherein the action includes defining the active topic as a second topic. | 10-04-2012 |
Patent application number | Description | Published |
20130143396 | Pretreatment Method for Reduction and/or Elimination of Basal Plane Dislocations Close to Epilayer/Substrate Interface in Growth of SiC Epitaxial - Non-destructive pretreatment methods are generally provided for a surface of a SiC substrate with substantially no degradation of surface morphology thereon. In one particular embodiment, a molten mixture (e.g., including KOH and a buffering agent) is applied directly onto the surface of the SiC substrate to form a treated surface thereon. An epitaxial film (e.g., SiC) can then be grown on the treated surface to achieve very high (e.g., up to and including 100%) BPD to TED conversion rate close to the epilayer/substrate interface. | 06-06-2013 |
20140338588 | Method of Growing High Quality, Thick SiC Epitaxial Films by Eliminating Silicon Gas Phase Nucleation and Suppressing Parasitic Deposition - Methods for forming an epilayer on a surface of a substrate are generally provided. For example, a substrate can be positioned within a hot wall CVD chamber (e.g., onto a susceptor within the CVD chamber). At least two source gases can then be introduced into the hot wall CVD chamber such that, upon decomposition, fluorine atoms, carbon atoms, and silicon atoms are present within the CVD chamber. The epilayer comprising SiC can then be grown on the surface of the substrate in the presence of the fluorine atoms. | 11-20-2014 |
20150128850 | Pretreatment Method for Reduction and/or Elimination of Basal Plane Dislocations Close to Epilayer/Substrate Interface in Growth of SiC Epitaxial Films - Non-destructive pretreatment methods are generally provided for a surface of a SiC substrate with substantially no degradation of surface morphology thereon. In one particular embodiment, a molten suspension mixture (e.g., including KOH (or KOH eutectic) and a buffering agent) is applied directly onto the surface of the SiC substrate to form a treated surface thereon. An epitaxial film (e.g., SiC) can then be grown on the treated surface to achieve very high (e.g., up to and including 100%) BPD to TED conversion rate close to the epilayer/substrate interface. | 05-14-2015 |
20150129897 | Pretreatment Method for Reduction and/or Elimination of Basal Plane Dislocations Close to Epilayer/Substrate Interface in Growth of SiC Epitaxial Films - Non-destructive pretreatment methods are generally provided for a surface of a SiC substrate with substantially no degradation of surface morphology thereon. In one particular embodiment, a molten mixture (e.g., including KOH and a buffering agent) is applied directly onto the surface of the SiC substrate to form a treated surface thereon. An epitaxial film (e.g., SiC) can then be grown on the treated surface to achieve very high (e.g., up to and including 100%) BPD to TED conversion rate close to the epilayer/substrate interface. | 05-14-2015 |
Patent application number | Description | Published |
20130200443 | Interface Engineering to Optimize Metal-III-V Contacts - Techniques for fabricating self-aligned contacts in III-V FET devices are provided. In one aspect, a method for fabricating a self-aligned contact to III-V materials includes the following steps. At least one metal is deposited on a surface of the III-V material. The at least one metal is reacted with an upper portion of the III-V material to form a metal-III-V alloy layer which is the self-aligned contact. An etch is used to remove any unreacted portions of the at least one metal. At least one impurity is implanted into the metal-III-V alloy layer. The at least one impurity implanted into the metal-III-V alloy layer is diffused to an interface between the metal-III-V alloy layer and the III-V material thereunder to reduce a contact resistance of the self-aligned contact. | 08-08-2013 |
20140264446 | III-V FINFETS ON SILICON SUBSTRATE - A method for forming fin field effect transistors includes forming a dielectric layer on a silicon substrate, forming high aspect ratio trenches in the dielectric layer down to the substrate, the high aspect ratio including a height to width ratio of greater than about 1:1 and epitaxially growing a non-silicon containing semiconductor material in the trenches using an aspect ratio trapping process to form fins. The one or more dielectric layers are etched to expose a portion of the fins. A barrier layer is epitaxially grown on the portion of the fins, and a gate stack is formed over the fins. A spacer is formed around the portion of the fins and the gate stack. Dopants are implanted into the portion of the fins. Source and drain regions are grown over the fins using a non-silicon containing semiconductor material. | 09-18-2014 |
20140264607 | III-V FINFETS ON SILICON SUBSTRATE - A method for forming fin field effect transistors includes forming a dielectric layer on a silicon substrate, forming high aspect ratio trenches in the dielectric layer down to the substrate, the high aspect ratio including a height to width ratio of greater than about 1:1 and epitaxially growing a non-silicon containing semiconductor material in the trenches using an aspect ratio trapping process to form fins. The one or more dielectric layers are etched to expose a portion of the fins. A barrier layer is epitaxially grown on the portion of the fins, and a gate stack is formed over the fins. A spacer is formed around the portion of the fins and the gate stack. Dopants are implanted into the portion of the fins. Source and drain regions are grown over the fins using a non-silicon containing semiconductor material. | 09-18-2014 |
20150030047 | III-V LASERS WITH INTEGRATED SILICON PHOTONIC CIRCUITS - III-V lasers integrated with silicon photonic circuits and methods for making the same include a three-layer semiconductor stack formed from III-V semiconductors on a substrate, where a middle layer has a lower bandgap than a top layer and a bottom layer; a mirror region monolithically formed at a first end of the stack, configured to reflect emitted light in the direction of the stack; and a waveguide region monolithically formed at a second end of the stack, configured to transmit emitted light. | 01-29-2015 |
20150048422 | A METHOD FOR FORMING A CRYSTALLINE COMPOUND III-V MATERIAL ON A SINGLE ELEMENT SUBSTRATE - A method for forming a crystalline compound material on a single element substrate includes etching a high aspect ratio trench in a single element crystalline substrate and forming a dielectric layer over the substrate and on sidewalls and a bottom of the trench. The dielectric is removed from the bottom of the trench to expose the substrate at the bottom of the trench. A crystalline compound material is selectively grown on the substrate at the bottom of the trench. | 02-19-2015 |
20150048423 | SEMICONDUCTOR DEVICE HAVING A III-V CRYSTALLINE COMPOUND MATERIAL SELECTIVELY GROWN ON THE BOTTOM OF A SPACE FORMED IN A SINGLE ELEMENT SUBSTRATE. - A method for forming a crystalline compound material on a single element substrate includes etching a high aspect ratio trench in a single element crystalline substrate and forming a dielectric layer over the substrate and on sidewalls and a bottom of the trench. The dielectric is removed from the bottom of the trench to expose the substrate at the bottom of the trench. A crystalline compound material is selectively grown on the substrate at the bottom of the trench. | 02-19-2015 |