Ramamoorthy
Krishnapriya Chakiat Ramamoorthy, Bristol GB
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20150286596 | SERVICE REQUEST INTERRUPT ROUTER WITH SHARED ARBITRATION UNIT - A service request interrupt router having Interrupt Control Units (ICUs); and an arbitration unit configured to be shared by the ICUs to arbitrate among Service Request Nodes (SRNs) that have respective service request interrupt signals and that are mapped to the ICUs, to determine for each of the ICUs which of the SRNs has a highest priority. | 10-08-2015 |
Raghu Ramamoorthy, Abu-Dhabi AE
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20130057277 | Method for Determining Rock Formation Fluid Interaction Properties Using Nuclear Magnetic Resonance Well Logging Measurements - A method for determining surface relaxivity of a rock formation in a wellbore includes using measurements of nuclear magnetic resonance properties of the rock formation made from within a wellbore penetrating the rock formations includes determining nuclear magnetic relaxation properties from the measurements of the nuclear magnetic resonance properties. A diffusion property of the rock formation is determined from the measurements of the nuclear magnetic resonance properties. The surface relaxivity of the rock formation is determined from the relaxation properties and the diffusion property. The surface relaxivity and other nuclear magnetic resonance properties are used to infer wettability and/or fluid saturation of the rock formations. | 03-07-2013 |
Rengasamy Ramamoorthy, Singapore SG
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20080271210 | Oryza Sativa Lectin-Like Receptor Kinase 1 (Oslrk1), a Gene Involved in Plant Development - The present invention is directed to a novel gene, Oslrk1, that is in involved in plant development, including root expansion. Methods of influencing this development are also described, as are transformed cells and transgenic plants comprising the described sequences. | 10-30-2008 |
Shankara Narayanan Keelapandal Ramamoorthy, Mannheim DE
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20120065339 | PROCESS FOR PRODUCING POLYAMIDE THAT IS STABLE DURING PROCESSING - Process for producing polyamides that are stable during processing, by treating the polyamide during the solid-phase postcondensation process with a gas which comprises carrier gas (inert gas), water, and acid, or an anhydride or lactone or a mixture of these or, respectively, comprises ammonia, or amine, or a mixture of these, at a temperature from 130 to 200° C. and at a pressure of from 0.01 to 10 bar. | 03-15-2012 |
20120128877 | Polyamides with Nanoparticles on the Surface - Process for producing polymer mixtures comprising at least one polymer (A) and comprising at least one component (B), comprising the following steps: | 05-24-2012 |
20140088268 | Process for Producing Polyamide that is Stable During Processing - Process for producing polyamides that are stable during processing, by treating the polyamide during the solid-phase postcondensation process with a gas which comprises carrier gas (inert gas), water, and acid, or an anhydride or lactone or a mixture of these or, respectively, comprises ammonia, or amine, or a mixture of these, at a temperature from 130 to 200° C. and at a pressure of from 0.01 to 10 bar. | 03-27-2014 |
Srinidhi Ramamoorthy, Singapore SG
Patent application number | Description | Published |
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20150093910 | METHODS FOR CONVERTING PLANAR DESIGNS TO FINFET DESIGNS IN THE DESIGN AND FABRICATION OF INTEGRATED CIRCUITS - Methods for converting planar designs to FinFET designs in the design and fabrication of integrated circuits are provided. In one embodiment, a method for converting a planar integrated circuit design to a non-planar integrated circuit design includes identifying a rectangular silicon active area in the planar integrated circuit design, superimposing a FinFET design grid comprising a plurality of equidistantly-spaced parallel grid lines over the rectangular silicon active area such that two sides of the rectangular silicon active area are parallel to the grid lines, and generating a rectangular active silicon marker area encompassing the silicon active area. Furthermore, the method includes generating fin mandrels longitudinally along every other grid line of the plurality of grid lines and within the active silicon marker area and the silicon active area, and removing the fin mandrels from areas of the design grid outside of the active silicon marker area. | 04-02-2015 |