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| 20090221612 | CERTAIN SUBSTITUTED AMIDES, METHOD OF MAKING, AND METHOD OF USE THEREOF - Certain chemical entities chosen from compounds represented by Formula I and pharmaceutically acceptable salts and mixtures thereof, are provided herein. Pharmaceutical compositions comprising at least one chemical entity and one or more pharmaceutically acceptable vehicle. Methods of treating patients suffering from certain diseases and disorders responsive to the inhibition of Syk activity, which comprises administering to such patients an amount of at least one chemical entity effective to reduce signs or symptoms of the disease or disorder are disclosed. These diseases include cancer (e.g., B-cell lymphoma and leukemia), autoimmune diseases, inflammatory diseases, acute inflammatory reactions, and allergic disorders. Methods of treatment include administering at least one chemical entity as a single active agent or administering at least one chemical entity in combination with one or more other therapeutic agents. Also provided are methods for determining the presence or absence of Syk kinase in a sample. | 09-03-2009 |
| 20100273765 | Rifamycin analogs and uses thereof - The present invention features rifamycin analogs that can be used as therapeutics for treating or preventing a variety of microbial infections. In one form, the analogs are acetylated at the 25-position, as is rifamycin. In another form, the analogs are deacetylated at the 25-position. In yet other forms, benzoxazinorifamycin, benzthiazinorifamycin, and benzdiazinorifamycin analogs are derivatized at various positions of the benzene ring, including 3′-hydroxy analogs, 4′- and/or 6′ halo and/or alkoxy analogs, and various 5′ substituents that incorporate a cyclic amine moiety. | 10-28-2010 |
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| 20100220964 | Fiber Optic Drop Cable Furcation Assemblies and Methods - Furcation assemblies ( | 09-02-2010 |
| 20110176780 | FIBER OPTIC CONNECTOR OF A FIBER OPTIC CONNECTION TERMINATION SYSTEM - A fiber optic connector for making a mechanical splice with an optical fiber secured in an optical fiber handler is disclosed. The fiber optic connector provides the craft with a simple, fast and reliable way for terminating the optical fiber. | 07-21-2011 |
| 20110188829 | METHODS, CLEAVERS, AND PACKAGINGS FOR CLEAVING AN OPTICAL FIBER USING AN ABRASIVE MEDIUM - Methods, cleavers, and packagings for cleaving an optical fiber using an abrasive medium are disclosed. The abrasive medium may be placed into contact with an optical fiber to induce a flaw in the optical fiber. The optical fiber is broken about the induced flaw to create an end face for fiber optic termination preparations. In one embodiment, a method for cleaving an optical fiber without employing a blade is provided. The method includes providing an optical fiber. A flaw is created in a portion of the optical fiber using a bladeless cleaver comprised of a body and a cleaver structure attached to the body. The cleaver structure is configured to actuate to place an abrasive medium in contact with the portion of the optical fiber to create a flaw in the optical fiber. The method further includes breaking the optical fiber at the flaw to create an end face. | 08-04-2011 |
| 20110204116 | BLADELESS CLEAVERS HAVING AN ARCUATE EXTERIOR SURFACE AND RELATED METHODS FOR CLEAVING AN OPTICAL FIBER USING AN ABRASIVE MEDIUM - Methods, cleavers, and packagings for cleaving an optical fiber using an abrasive medium are disclosed. In one embodiment, a bladeless cleaver includes a body having an arcuate exterior surface, which may be provided in one embodiment by an exterior surface of a tool or toolkit, such as, but not limited to, a consumables kit or other packaging. A cleaver structure is disposed on the body such that a space between the arcuate exterior surface of the body and the cleaver structure is configured to receive a portion of the optical fiber to be cleaved. The cleaver structure comprises an abrasive medium carrier that is configured to be actuated to place the abrasive medium in contact with the portion of the optical fiber to create a flaw in the portion of the optical fiber. In another embodiment, the portion of the optical fiber may be positioned directly along the arcuate exterior surface of the body. | 08-25-2011 |
| 20110204117 | BLADELESS CLEAVERS HAVING A FLEXIBLE TONGUE AND RELATED METHODS FOR CLEAVING AN OPTICAL FIBER USING AN ABRASIVE MEDIUM - Methods, cleavers, and packagings for cleaving an optical fiber using an abrasive medium are disclosed. In one embodiment, the bladeless cleaver includes a body having a flexible tongue configured to receive an optical fiber. The flexible tongue is further configured to provide an arcuate surface to bend a portion of the optical fiber. The bladeless cleaver in this embodiment also includes a cleaver structure attached to the body that comprises an abrasive medium carrier configured to support an abrasive medium. The abrasive medium carrier is configured to be actuated to place the abrasive medium in contact with the portion of the optical fiber to create a flaw in the portion of the optical fiber. | 08-25-2011 |
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| 20090206440 | Power Semiconductor Device - A semiconductor device has a heavily doped substrate and an upper layer with doped silicon of a first conductivity type disposed on the substrate, the upper layer having an upper surface and including an active region that comprises a well region of a second, opposite conductivity type. An edge termination zone has a junction termination extension (JTE) region of the second conductivity type, the region having portions extending away from the well region and a number of field limiting rings of the second conductivity type disposed at the upper surface in the junction termination extension region. | 08-20-2009 |
| 20090289690 | SEMICONDUCTOR DEVICE WITH SWITCH ELECTRODE AND GATE ELECTRODE AND METHOD FOR SWITCHING A SEMICONDUCTOR DEVICE - A semiconductor device with switch electrode and gate electrode and a method for switching a semiconductor device. One embodiment provides a semiconductor substrate with an emitter region, a drift region, a body region and a source region. The drift region is formed between the emitter and the body region while the body region is formed between the drift and the source region. A first trench structure extends from the source region at least partially into the drift region. The first trench structure includes a gate electrode arranged next to the body region and a switch electrode arranged in portions next to the drift region, wherein the switch and gate electrodes are electrically insulated from each other in the trench structure. A first gate driver is electrically connected to the gate electrode while a second gate driver is electrically connected to the switch gate. | 11-26-2009 |
| 20110018029 | SEMICONDUCTOR DEVICE HAVING A FLOATING SEMICONDUCTOR ZONE - A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region. | 01-27-2011 |
| 20110309423 | SEMICONDUCTOR DEVICE HAVING A TRENCH GATE AND METHOD FOR MANUFACTURING - A semiconductor device having a trench gate and method for manufacturing is disclosed. One embodiment includes a first semiconductor area and a second semiconductor area, a semiconductor body area between the first semiconductor area and the second semiconductor area, and a gate arranged in a trench and separated from the semiconductor body by an insulation layer, wherein the trench has a top trench portion which extends from the semiconductor surface at least to a depth which is greater than a depth of the first semiconductor area, wherein the trench further has a bottom trench portion extending subsequent to the top trench portion at least up to the second semiconductor area, and wherein the top trench portion has a first lateral dimension and the bottom trench portion has a second lateral dimension which is greater than the first lateral dimension. | 12-22-2011 |
