Patent application number | Description | Published |
20100106570 | SYSTEMS AND METHODS FOR ENROLLMENT AND PARTICIPATION IN A LOYALTY PROGRAM - According to some embodiments, systems, methods, apparatus, computer program code and means are provided for enrolling payment cardholders in loyalty programs and processing loyalty transactions. Some embodiments include receiving, from a consumer associated with a payment device, loyalty program enrollment information and a payment device identifier, the loyalty program enrollment information including a loyalty program identifier, and providing the loyalty program enrollment information and the payment device identifier to at least one of an issuer of the payment device and an agent of the issuer. The loyalty program identifier is caused to be stored in a memory of said payment device. | 04-29-2010 |
20100274712 | APPARATUS, METHOD, AND COMPUTER PROGRAM PRODUCT FOR PROVIDING A QUALITY CONTROL MECHANISM FOR THE CONTACTLESS INTERFACE OF A DUAL-INTERFACE CARD - Techniques for enabling performance of a quality control function on the contactless interface while the contactless interface is disabled are provided. The techniques include implementing, on a dual-interface payment device, one or more security mechanisms, wherein the dual-interface payment device comprises a first interface and a second interface, using the one or more security mechanisms to prevent a subset of data corresponding to the first interface from being read using the second interface while allowing data corresponding to the second interface to be read using the first interface, and personalizing the dual-interface payment device and the one or more security mechanisms according to one or more requirements of an issuer of the dual-interface payment device. | 10-28-2010 |
20100325039 | APPARATUS, METHOD, AND COMPUTER PROGRAM PRODUCT FOR ENCODING ENHANCED ISSUER INFORMATION IN A CARD - Facilitating communications between an electronic payment device and an issuer host includes storing in the payment device a set of personalization parameters. A first set of status information indicative of available status information relating to the payment device is transformed into a second set of status information based on the set of personalization parameters, and/or a second set of actions is selected from a first set of actions indicative of available actions to be performed by the payment device based on the set of personalization parameters and an order received from the issuer for initiating at least one corresponding action in the payment device. The second set of status information includes a subset of the first set of status information; the second set of actions includes a subset of the first set of actions. The payment device transmits the second set of status information to the issuer and/or initiates the actions in the second set of actions corresponding to the order received from the issuer. | 12-23-2010 |
20110047036 | ALL-IN-ONE PROXIMITY PAYMENT DEVICE WITH LOCAL AUTHENTICATION - A personal powered proximity payment device that can be owned by or issued to an individual user is provided. The device is a non-ISO card device that includes an internal dual-mode (contact and contactless) chip card coupled to a display and a robust PIN entry or biometric reading means. The device provides proximity payment functions, and optional proximity payment on/off and local pre-purchase account holder verification functions to the individual user. | 02-24-2011 |
20110112918 | METHODS FOR RISK MANAGEMENT IN PAYMENT-ENABLED MOBILE DEVICE - A payment-enabled mobile device such as a “smart phone” incorporates risk management features that are applicable to its use in contactless payment transactions. Some features may govern when verification of the cardholder's identity is required for consummation of the current transaction. The features may be configurable by the payment card account issuer and/or the user of the mobile device. | 05-12-2011 |
20110112920 | METHODS FOR RISK MANAGEMENT IN PAYMENT-ENABLED MOBILE DEVICE - A payment-enabled mobile device such as a “smart phone” incorporates risk management features that are applicable to its use in contactless payment transactions. Some features may govern when verification of the cardholder's identity is required for consummation of the current transaction. The features may be configurable by the payment card account issuer and/or the user of the mobile device. | 05-12-2011 |
20130185167 | FINANCIAL TRANSACTION METHOD AND SYSTEM HAVING AN UPDATE MECHANISM - A payment device and method and system for using the payment device is described capable of utilizing a pre-authorized amount on existing infrastructure, including POS terminals or for using offline pre-paid products on this infrastructure. The updates for the pre-authorized or offline prepaid products can be sent by the issuer and applied by the card contemporaneously with the card's processing of the issuer authentication data but without requiring any additional bytes in the issuer authentication data. The updates performed by the issuer can be larger and more extensive than could be achieved by using any available space in the issuer authentication data. | 07-18-2013 |
20140046848 | AUTOMATIC REGISTRATION AND GENERATION OF CONSUMER PAYMENT CREDENTIALS USING INTERNET-CONNECTED APPLIANCES - Systems, apparatus and methods for allowing cardholders to conveniently and securely purchase items online using an Internet-connected appliance. An Internet-connected appliance reads payment account data from a cardholder payment device and transmits a cardholder registration request to a gateway server. The Internet-connected appliance receives a cardholder verification request, prompts the cardholder to respond, transmits the response, receives a cardholder authentication message, and then stores the cardholder payment account data in a dedicated storage element. In an implementation, the Internet-connected appliance receives a purchase instruction for an online purchase, automatically generates and transmits a purchase transaction request, receives a purchase transaction response, and provides the purchase transaction response to the cardholder. | 02-13-2014 |
20140067685 | APPARATUS, METHOD, AND COMPUTER PROGRAM PRODUCT FOR PROVIDING A QUALITY CONTROL MECHANISM FOR THE CONTACTLESS INTERFACE OF A DUAL-INTERFACE CARD - Techniques for enabling performance of a quality control function on the contactless interface while the contactless interface is disabled are provided. The techniques include implementing, on a dual-interface payment device, one or more security mechanisms, wherein the dual-interface payment device comprises a first interface and a second interface, using the one or more security mechanisms to prevent a subset of data corresponding to the first interface from being read using the second interface while allowing data corresponding to the second interface to be read using the first interface, and personalizing the dual-interface payment device and the one or more security mechanisms according to one or more requirements of an issuer of the dual-interface payment device. | 03-06-2014 |
20140209672 | METHODS FOR RISK MANAGEMENT IN PAYMENT-ENABLED MOBILE DEVICE - A payment-enabled mobile device receives, during a first tap of the mobile device on a proximity reader component of a point of sale (POS) terminal, first transaction context data for a current transaction, and receives during a second tap of the mobile device on the proximity reader component, second transaction context data for the current transaction. When the mobile device determines that the second tap is for the same transaction as the first tap, and that one of a customer verification method (CVM) status or a user acknowledgment status flag has been set, then it transmits a payment card account number to the POS terminal to consummate the transaction. | 07-31-2014 |
20140367474 | DISPLAY CARD WITH USER INTERFACE - A display card | 12-18-2014 |
20150106217 | VIRTUAL POS SYSTEM AND METHOD - The present invention relates to a token device for securely executing a data transaction. The token device comprises: a secure element; a web server module configured within the secure element and arranged to transmit data messages over a network; a terminal application module configured within the web server module; and an application module configured within the secure element. The terminal application module and the application module are arranged to execute the data transaction protocol as one or more data exchanges therebetween within the secure element, upon receipt of a service request data message, received over the network at the web server module from an authorised remotely located Point of Sale (POS) terminal. The web server module is subsequently arranged to generate a transaction response data message for transmission to the remotely located POS terminal, on successful completion of the transaction protocol. | 04-16-2015 |
20150112869 | Methods and Systems for Use in Online Transactions - A method of enabling the creation of a wallet entry in a digital wallet, wherein the wallet entry is for use in completing online transactions. The method comprises associating a local device with a network portal, using the local device to obtain card data relating to a card, encrypting the card data on the local device, and transmitting the encrypted card data from the local device to a remote server by means of the network portal. The remote server is arranged to decrypt the card data and use the card data to create the wallet entry. | 04-23-2015 |
20150154596 | METHOD AND SYSTEM FOR GENERATING AN ADVANCED STORAGE KEY IN A MOBILE DEVICE WITHOUT SECURE ELEMENTS - A method for building an advanced storage key includes: storing, in a mobile device, at least (i) device information associated with the mobile device, (ii) program code associated with a first program including an instance identifier, and (iii) program code associated with a second program including a first key; generating a device fingerprint associated with the mobile device based on the device information via execution of the code associated with the first program; generating a random value via execution of the code associated with the first program; building a diversifier value based on the generated device fingerprint, the generated random value, and the instance identifier included in the code associated with the first program; and decrypting the built diversifier value using the first key stored in the code associated with the second program via execution of the code associated with the second program to obtain a storage key. | 06-04-2015 |
20150248668 | SECURE MOBILE DEVICE TRANSACTIONS - A mobile computing device has a processor and a memory. The processor is programmed with a mobile transaction application | 09-03-2015 |
20150254639 | TRANSACTIONS UTILIZING MULTIPLE DIGITAL WALLETS - First and second wallet form data are transmitted to a mobile device. The first and second wallet form data indicate funding account options respectively available from two different digital wallets. The user of the mobile device may split funding for a transaction between an account selected from the first digital wallet and an account selected from the second digital wallet. | 09-10-2015 |
20150254649 | AUTHENTICATION TOKEN FOR WALLET BASED TRANSACTIONS - Transaction address data is received at a point of interaction (POI) device, from a payment-enabled mobile device. The transaction address data includes first address data and second address data. The first address data identifies a wallet service provider that is associated with the payment-enabled mobile device. The second address data indicates an internet address for a server function present in the payment-enabled mobile device. The first address data is used to dispatch the second address data from the POI device to the wallet service provider. | 09-10-2015 |
20150254662 | VERIFYING TRANSACTION CONTEXT DATA AT WALLET SERVICE PROVIDER - A first message is received at a wallet service provider. The first message contains transaction detail and transaction context data. A second message is also received at the wallet service provider. The second message contains a copy of the transaction detail data and a copy of the transaction context data. The wallet service provider may verify that the data copies match the original data. One of the messages may be received from a payment-enabled mobile device. The other message may originate from a merchant. | 09-10-2015 |
20150287031 | METHODS AND APPARATUS FOR CARD TRANSACTIONS - A secure payment system comprises a merchant POS client and a remote POS server. The merchant POS client comprises a reading device for reading a customer user token and for accepting transaction details and customer verification data, and also a computing device with access to a communications network and in communication with the reading device. The merchant POS client also comprises a merchant token associated with the remote POS server. The remote POS server is in communication with the merchant POS client through the communications network, and one or more elements of the merchant POS client business logic are assured by the remote POS server and not the merchant POS client. A merchant token for use in such a merchant POS client is described, as is a suitable reader device, and a method of conducting a transaction using such a payment system. | 10-08-2015 |
20160092878 | METHOD AND APPARATUS FOR STREAMLINED DIGITAL WALLET TRANSACTIONS - A method includes maintaining a digital wallet in a computer, and receiving a request for a transaction. The computer may receive and verify user authentication data, and then allow the user to access any payment card account in the digital wallet without requiring additional user authentication, regardless of the account selected for the transaction by the user. In some embodiments, cryptogram generation may be performed with an EMV server in association with the digital wallet, to enhance the level of security assurance for merchants, issuers and users. | 03-31-2016 |
20160104147 | METHODS FOR RISK MANAGEMENT IN PAYMENT-ENABLED MOBILE DEVICE - A payment-enabled mobile device such as a “smart phone” incorporates risk management features applicable when used for a contactless payment transactions. In some embodiments, a mobile device processor includes a non-volatile memory storing a first counter and an associated first accumulator used for financial risk management purposes, and storing a second counter and an associated second accumulator used for enforcing a cardholder verification requirement, and storing a payment application program. In some embodiments, features govern when cardholder verification is required for consummation of the current transaction, and such features may be configurable by the payment card account issuer and/or the user of the mobile device. | 04-14-2016 |
Patent application number | Description | Published |
20100264458 | METHOD FOR MANUFACTURING HETEROSTRUCTURES - A method for manufacturing heterostructures for applications in the fields of electronics, optics or opto-electronics. This method includes providing a silicon oxide layer with a thickness of less than or equal to 25 nanometers on one of a donor substrate or a receiver substrate or on both substrates, heat treating the substrate(s) that contains the silicon oxide layer at 900° C. to 1,200° C. under a neutral or reducing atmosphere that contains at least one of argon or hydrogen to form layer trapping through-holes inside the silicon oxide, bonding the substrates together at a bonding interface with the silicon oxide layer(s) positioned between them, reinforcing the bonding by annealing the substrates at 25° C. to 500° C. such that the trapping holes retaining gas species at the bonding interface, and transferring an active layer as a portion of the donor substrate onto the receiver substrate to obtain the heterostructure. | 10-21-2010 |
20110127581 | HETEROSTRUCTURE FOR ELECTRONIC POWER COMPONENTS, OPTOELECTRONIC OR PHOTOVOLTAIC COMPONENTS - The present invention relates to a support for the epitaxy of a layer of a material of composition Al | 06-02-2011 |
20110207295 | METHOD OF DETACHING SEMI-CONDUCTOR LAYERS AT LOW TEMPERATURE - A method for producing a structure having an ultra thin buried oxide (UTBOX) layer by assembling a donor substrate with a receiver substrate wherein at least one of the substrates includes an insulating layer having a thickness of less than 50 nm that faces the other substrate, conducting a first heat treatment for reinforcing the assembly between the two substrates at temperature below 400° C., and conducting a second heat treatment at temperature above 900° C., wherein the exposure time between 400° C. and 900° C. between the heat treatments is less than 1 minute and advantageously less than 30 seconds. | 08-25-2011 |
20110308721 | APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICES - The present invention relates to an apparatus for the manufacture of semiconductor devices wherein the apparatus includes a bonding module that has a vacuum chamber to provide bonding of wafers under pressure below atmospheric pressure; and a loadlock module connected to the bonding module and configured for wafer transfer to the bonding module. The loadlock module is also connected to a first vacuum pumping device configured to reduce the pressure in the loadlock module to below atmospheric pressure. | 12-22-2011 |
20120013012 | METHODS OF FORMING BONDED SEMICONDUCTOR STRUCTURES, AND SEMICONDUCTOR STRUCTURES FORMED BY SUCH METHODS - Methods of forming bonded semiconductor structures include temporarily, directly bonding together semiconductor structures, thinning at least one of the semiconductor structures, and subsequently permanently bonding the thinned semiconductor structure to another semiconductor structure. The temporary, direct bond may be established without the use of an adhesive. Bonded semiconductor structures are fabricated in accordance with such methods. | 01-19-2012 |
20120013013 | TEMPORARY SEMICONDUCTOR STRUCTURE BONDING METHODS AND RELATED BONDED SEMICONDUCTOR STRUCTURES - Methods of fabricating semiconductor structures include implanting atom species into a carrier die or wafer to form a weakened region within the carrier die or wafer, and bonding the carrier die or wafer to a semiconductor structure. The semiconductor structure may be processed while using the carrier die or wafer to handle the semiconductor structure. The semiconductor structure may be bonded to another semiconductor structure, and the carrier die or wafer may be divided along the weakened region therein. Bonded semiconductor structures are fabricated using such methods. | 01-19-2012 |
20120015497 | Preparing a Surface of a Sapphire Substrate for Fabricating Heterostructures - A method of fabricating a heterostructure comprising at least a first substrate ( | 01-19-2012 |
20120067524 | APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICES - The present invention relates to an apparatus for the manufacture of semiconductor devices wherein the apparatus includes a bonding module that has a pumping device; a vacuum chamber connected to the pumping device; and an optical system configured to determine the position of alignment marks on the surfaces of the semiconductor wafers to be bonded in the bonding module. The apparatus also includes a loadlock module connected to the bonding module and configured for wafer transfer to the bonding module. The loadlock module is also connected to a first vacuum pumping device configured to reduce the pressure in the loadlock module to below atmospheric pressure. | 03-22-2012 |
20120241821 | HETEROSTRUCTURE FOR ELECTRONIC POWER COMPONENTS, OPTOELECTRONIC OR PHOTOVOLTAIC COMPONENTS - A heterostructure that includes, successively, a support substrate of a material having an electrical resistivity of less than 10 | 09-27-2012 |
20120252162 | METHODS FOR BONDING SEMICONDUCTOR STRUCTURES INVOLVING ANNEALING PROCESSES, AND BONDED SEMICONDUCTOR STRUCTURES FORMED USING SUCH METHODS - Methods of bonding together semiconductor structures include annealing a first metal feature on a first semiconductor structure, bonding the first metal feature to a second metal feature of a second semiconductor structure to form a bonded metal structure that comprises the first metal feature and the second metal feature, and annealing the bonded metal structure. Annealing the first metal feature may comprise subjecting the first metal feature to a pre-bonding thermal budget, and annealing the bonded metal structure may comprise subjecting the bonded metal structure to a post-bonding thermal budget that is less than the pre-bonding thermal budget. Bonded semiconductor structures are fabricated using such methods. | 10-04-2012 |
20120252189 | METHODS FOR BONDING SEMICONDUCTOR STRUCTURES INVOLVING ANNEALING PROCESSES, AND BONDED SEMICONDUCTOR STRUCTURES AND INTERMEDIATE STRUCTURES FORMED USING SUCH METHODS - Methods of bonding together semiconductor structures include annealing metal of a feature on a semiconductor structure prior to directly bonding the feature to a metal feature of another semiconductor structure to form a bonded metal structure, and annealing the bonded metal structure after the bonding process. The thermal budget of the first annealing process may be at least as high as a thermal budget of a later annealing process. Additional methods involve forming a void in a metal feature, and annealing the metal feature to expand the metal of the feature into the void. Bonded semiconductor structures and intermediate structures are formed using such methods. | 10-04-2012 |
20130026608 | PROCESS FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE COMPRISING A FUNCTIONALIZED LAYER ON A SUPPORT SUBSTRATE - The invention relates to a process for manufacturing a semiconductor structure comprising a functionalized layer on a support substrate, comprising the following steps: (a) implanting ionic species in a source substrate comprising the said functionalized layer and a sacrificial buffer layer located under the functionalized layer relative to the direction of implantation, to a depth delimiting the thickness of an upper part of the source substrate comprising the functionalized layer and at least part of the buffer layer; (b) bonding the source substrate to the support substrate; (c) fracturing the source substrate and transferring the upper part of the source substrate to the support substrate; (d) removing the buffer layer by selective etching with respect to the functionalized layer. | 01-31-2013 |
20130026663 | METHOD FOR CURING DEFECTS IN A SEMICONDUCTOR LAYER - A method for curing defects associated with the implantation of atomic species into a semiconductor layer transferred onto a receiver substrate, wherein the semiconductor layer is thermally insulated from the receiver substrate by a low thermal conductivity layer having thermal conductivity that is lower than that of the transferred semiconductor layer. The method includes applying a selective electromagnetic irradiation to the semiconductor layer to heat that layer to a temperature lower than its temperature of fusion to cure defects without causing an increase in the temperature of the receiver substrate beyond 500° C. | 01-31-2013 |
20130032272 | APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICES - The present invention relates to an apparatus for the manufacture of semiconductor devices wherein the apparatus includes a bonding module that has a vacuum chamber to provide bonding of wafers under pressure below atmospheric pressure; and a loadlock module connected to the bonding module and configured for wafer transfer to the bonding module. The loadlock module is also connected to a first vacuum pumping device configured to reduce the pressure in the loadlock module to below atmospheric pressure. The bonding and loadlock modules remain at a pressure below atmospheric pressure while the wafer is transferred from the loadlock module into the bonding module. | 02-07-2013 |
20130075868 | METHODS OF TRANSFERRING LAYERS OF MATERIAL IN 3D INTEGRATION PROCESSES AND RELATED STRUCTURES AND DEVICES - Methods of transferring a layer of semiconductor material from a first donor structure to a second structure include forming a generally planar weakened zone within the first donor structure defined by implanted ions therein. At least one of a concentration of the implanted ions and an elemental composition of the implanted ions may be formed to vary laterally across the generally planar weakened zone. The first donor structure may be bonded to a second structure, and the first donor structure may be fractured along the generally planar weakened zone, leaving the layer of semiconductor material bonded to the second structure. Semiconductor devices may be fabricated by forming active device structures on the transferred layer of semiconductor material. Semiconductor structures are fabricated using the described methods. | 03-28-2013 |
20130175672 | LOW TEMPERATURE LAYER TRANSFER PROCESS USING DONOR STRUCTURE WITH MATERIAL IN RECESSES IN TRANSFER LAYER, SEMICONDUCTOR STRUCTURES FABRICATED USING SUCH METHODS - Methods of transferring a layer of semiconductor material from a first donor structure to a second structure include forming recesses in the donor structure, implanting ions into the donor structure to form a generally planar, inhomogeneous weakened zone therein, and providing material within the recesses. The first donor structure may be bonded to a second structure, and the first donor structure may be fractured along the generally planar weakened zone, leaving the layer of semiconductor material bonded to the second structure. Semiconductor devices may be fabricated by forming active device structures on the transferred layer of semiconductor material. Semiconductor structures are fabricated using the described methods. | 07-11-2013 |
20130217206 | METHODS OF PROVIDING THIN LAYERS OF CRYSTALLINE SEMICONDUCTOR MATERIAL, AND RELATED STRUCTURES AND DEVICES - Methods of fabricating semiconductor devices include forming a metal silicide in a portion of a crystalline silicon layer, and etching the metal silicide using an etchant selective to the metal silicide relative to the crystalline silicon to provide a thin crystalline silicon layer. Silicon-on-insulator (SOI) substrates may be formed by providing a layer of crystalline silicon over a base substrate with a dielectric material between the layer of crystalline silicone and the base substrate, and thinning the layer of crystalline silicon by forming a metal silicide layer in a portion of the crystalline silicon, and then etching the metal silicide layer using an etchant selective to the metal silicide layer relative to the crystalline silicon. | 08-22-2013 |
20130256907 | BONDED PROCESSED SEMICONDUCTOR STRUCTURES AND CARRIERS - Methods of fabricating semiconductor structures include implanting atom species into a carrier die or wafer to form a weakened region within the carrier die or wafer, and bonding the carrier die or wafer to a semiconductor structure. The semiconductor structure may be processed while using the carrier die or wafer to handle the semiconductor structure. The semiconductor structure may be bonded to another semiconductor structure, and the carrier die or wafer may be divided along the weakened region therein. Bonded semiconductor structures are fabricated using such methods. | 10-03-2013 |
20130299997 | METHODS OF FORMING BONDED SEMICONDUCTOR STRUCTURES - Methods of forming bonded semiconductor structures include temporarily, directly bonding together semiconductor structures, thinning at least one of the semiconductor structures, and subsequently permanently bonding the thinned semiconductor structure to another semiconductor structure. The temporary, direct bond may be established without the use of an adhesive. Bonded semiconductor structures are fabricated in accordance with such methods. | 11-14-2013 |
20140357093 | PROCESS FOR STABILIZING A BONDING INTERFACE, LOCATED WITHIN A STRUCTURE WHICH COMPRISES AN OXIDE LAYER AND STRUCTURE OBTAINED - The invention relates to a process for stabilizing a bonding interface, located within a structure for applications in the fields of electronics, optics and/or optoelectronics and that comprises an oxide layer buried between an active layer and a receiver substrate, the bonding interface having been obtained by molecular adhesion. In accordance with the invention, the process further comprises irradiating this structure with a light energy flux provided by a laser, so that the flux, directed toward the structure, is absorbed by the energy conversion layer and converted to heat in this layer, and in that this heat diffuses into the structure toward the bonding interface, so as to thus stabilize the bonding interface. | 12-04-2014 |
20150179603 | METHOD FOR PRODUCING COMPOSITE STRUCTURE WITH METAL/METAL BONDING - Method for producing a composite structure comprising the direct bonding of at least one first wafer with a second wafer, and comprising a step of initiating the propagation of a bonding wave, where the bonding interface between the first and second wafers after the propagation of the bonding wave has a bonding energy of less than or equal to 0.7 J/m | 06-25-2015 |
20150228535 | BONDED PROCESSED SEMICONDUCTOR STRUCTURES AND CARRIERS - Methods of fabricating semiconductor structures include implanting atom species into a carrier die or wafer to form a weakened region within the carrier die or wafer, and bonding the carrier die or wafer to a semiconductor structure. The semiconductor structure may be processed while using the carrier die or wafer to handle the semiconductor structure. The semiconductor structure may be bonded to another semiconductor structure, and the carrier die or wafer may be divided along the weakened region therein. Bonded semiconductor structures are fabricated using such methods. | 08-13-2015 |
20150279830 | METHOD FOR BONDING SEMICONDUCTOR WAFERS USING A MOLECULAR BONDING APPARATUS - The present invention relates to an apparatus for the manufacture of semiconductor devices wherein the apparatus includes a bonding module that has a vacuum chamber to provide bonding of wafers under pressure below atmospheric pressure; and a loadlock module connected to the bonding module and configured for wafer transfer to the bonding module. The loadlock module is also connected to a first vacuum pumping device configured to reduce the pressure in the loadlock module to below atmospheric pressure. The bonding and loadlock modules remain at a pressure below atmospheric pressure while the wafer is transferred from the loadlock module into the bonding module. | 10-01-2015 |
20150364364 | METHOD FOR TRASFERRING A LAYER - A method comprising the following steps: providing a support substrate and a donor substrate, forming an embrittlement region in the donor substrate so as to delimit a first portion and a second portion on either side of the embrittlement region, assembling the donor substrate on the support substrate, fracturing the donor substrate along the embrittlement. In addition, the method comprises a step consisting of forming a compressive stress layer in the donor substrate so as to delimit a so-called confinement region interposed between the compressive stress layer and the embrittlement region. | 12-17-2015 |
20160086974 | METHOD FOR FABRICATING SEMICONDUCTOR STRUCTURES INCLUDING TRANSISTOR CHANNELS HAVING DIFFERENT STRAIN STATES, AND RELATED SEMICONDUCTOR STRUCTURES - Methods of fabricating a semiconductor structure include implanting ion into a second region of a strained semiconductor layer on a multi-layer substrate to amorphize a portion of crystalline semiconductor material in the second region of the strained semiconductor layer without amorphizing a first region of the strained semiconductor layer. The amorphous region is recrystallized, and elements are diffused within the semiconductor layer to enrich a concentration of the diffused elements in a portion of the second region of the strained semiconductor layer and alter a strain state therein relative to a strain state of the first region of the strained semiconductor layer. A first plurality of transistor channel structures are formed that each comprise a portion of the first region of the semiconductor layer, and a second plurality of transistor channel structures are formed that each comprise a portion of the second region of the semiconductor layer. | 03-24-2016 |