Patent application number | Description | Published |
20120068177 | MEASURING APPARATUS - A measuring apparatus including a first chip, a first circuit layer, a first heater, a first stress sensor and a second circuit layer is provided. The first chip has a first through silicon via, a first surface and a second surface opposite to the first surface. The first circuit layer is disposed on the first surface. The first heater and the first stress sensor are disposed on the first surface and connected to the first circuit layer. The second circuit layer is disposed on the second surface. The first heater comprises a plurality of first switches connected in series to generate heat. | 03-22-2012 |
20120092834 | HEAT DISSIPATION STRUCTURE FOR ELECTRONIC DEVICE AND FABRICATION METHOD THEREOF - A heat dissipation structure for an electronic device includes a body having a first surface and a second surface opposite to the first surface. A silicon-containing insulating layer is disposed on the first surface of the body. A chemical vapor deposition (CVD) diamond film is disposed on the silicon-containing insulating layer. A first conductive pattern layer is disposed on the silicon-containing insulating layer, wherein the first conductive pattern layer is enclosed by and spaced apart from the CVD diamond film. A method for fabricating a heat dissipation structure for an electronic device and an electronic package having the heat dissipation structure are also disclosed. | 04-19-2012 |
20120153454 | SEMICONDUCTOR DEVICE - A semiconductor device including a silicon substrate, a plurality of silicon nanowire clusters, a first circuit layer and a second circuit layer. The silicon substrate has a first surface, a second surface opposite to the first surface and a plurality of through holes. The silicon nanowire clusters are disposed in the through holes of the silicon substrate, respectively. The first circuit layer is disposed on the first surface and connected to the silicon nanowire clusters. The second circuit layer is disposed on the second surface and connected to the silicon nanowire clusters. | 06-21-2012 |
20120227684 | HYDROGEN/OXYGEN GAS GENERATING APPARATUS AND INTERNAL COMBUSTION ENGINE SYSTEM HAVING THE SAME - An internal combustion engine system including an electric power generating device, a container, a set of positive and negative electrodes and an internal combustion engine is provided. The container contains an electrolytic solution and has a gas outlet. The set of positive and negative electrodes are disposed within the electrolytic solution in the container, wherein the set of positive and negative electrodes are electrically connected to a first power output end and a second power output end of the electric power generating device, respectively. The internal combustion engine is connected to the gas outlet, wherein a gas product directed from the gas outlet is used as a fuel of the internal combustion engine. Further, the electric power generating device can be applied on a hydrogen/oxygen gas generating apparatus and integrated into the internal combustion engine system of a motor vehicle. | 09-13-2012 |
20120249176 | TEST STRUCTURE AND MEASUREMENT METHOD THEREOF - A test structure including a substrate, at least one conductive plug, a first conductive trace and a second conductive trace is provided. The substrate has a first area and a second area. The at lest one conductive plug is disposed in the substrate in the first area, wherein the conductive plug does not penetrate through the substrate. | 10-04-2012 |
20120273939 | FILLED THROUGH-SILICON VIA AND THE FABRICATION METHOD THEREOF - By adding particles of high thermal conductivity and low thermal expansion coefficient into the copper as a composite material and filling with the composite material into the through-via hole, the mismatch of the coefficient of thermal expansion and the stress of the through-silicon via are lowered and the thermal conductivity of the through-silicon via is increased. | 11-01-2012 |
20120280385 | ELECTRONIC DEVICE PACKAGING STRUCTURE - An electronic device packaging structure is provided. The semiconductor device includes a semiconductor base, an emitter, a collector, and a gate. The emitter and the gate are disposed on a first surface of the semiconductor base. The collector is disposed on a second surface of the semiconductor base. A first passivation layer is located on the first surface of the semiconductor base surrounding the gate. A first conductive pad is disposed on the first passivation layer. A second conductive pad is disposed on the collector on the second surface. At least one conductive through via structure penetrates the first passivation layer, the first and second surfaces of the semiconductor base, and the collector to electrically connect the first and second conductive pads. | 11-08-2012 |
20130171747 | FABRICATING METHOD OF SEMICONDUCTOR DEVICE - A fabricating method and a testing method of a semiconductor device and a mechanical integrity testing apparatus are provided. An object includes a wafer, an insulating layer, and a plurality of conductive posts is provided. A surface of the wafer has a plurality of first blind holes outside chip regions and a plurality of second blind holes inside the chip regions. The insulating layer is between the conductive posts and the walls of the first blind holes and between the conductive posts and the walls of the second blind holes. A mechanical integrity test is performed to test a binding strength between the insulating layer, the conductive posts, and the walls of the first blind holes. The conductive posts in the chip regions are electrically connected to an element after the conductive posts in the first blind holes are qualified in the mechanical integrity test. | 07-04-2013 |
20130234325 | FILLED THROUGH-SILICON VIA AND THE FABRICATION METHOD THEREOF - By adding particles of high thermal conductivity and low thermal expansion coefficient into the copper as a composite material and filling with the composite material into the through-via hole, the mismatch of the coefficient of thermal expansion and the stress of the through-silicon via are lowered and the thermal conductivity of the through-silicon via is increased. | 09-12-2013 |
20140056001 | LED LIGHT BULB MODULE - A light emitting diode (LED) light bulb module includes an LED light bulb unit having a first connector; an LED supporting device unit having a second connector which is configured to electrically coupled to the first connector, and a third connector which is configured to electrically coupled to a power supply source; and a thermal insulating structure configured to thermally decouple the LED light bulb unit and the LED supporting device unit. The LED light bulb unit and the LED supporting device unit can be either physically joined or detached from each other, and ideally, two separated heat sink apparatuses, each dedicated to the LED light bulb unit and the LED supporting device unit, respectively may be used. | 02-27-2014 |