Quinsat
Michael Quinsat, Grenoble FR
Patent application number | Description | Published |
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20130057356 | MAGNETORESISTIVE RADIOFREQUENCY OSCILLATOR AND METHOD FOR GENERATING AN OSCILLATING SIGNAL - The invention relates to a radio frequency oscillator which incorporates: a spin-polarized electric current magnetoresistive device ( | 03-07-2013 |
20130057357 | MAGNETORESISTIVE RADIOFREQUENCY OSCILLATOR AND METHOD FOR GENERATING AN OSCILLATING SIGNAL - The invention relates to a radiofrequency oscillator which incorporates: a spin-polarized electric current magnetoresistive device ( | 03-07-2013 |
Michael Arnaud Quinsat, Yokohama-Shi JP
Patent application number | Description | Published |
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20150078070 | MAGNETIC MEMORY DEVICE AND DRIVING METHOD FOR THE SAME - According to one embodiment, a magnetic memory device includes a magnetic unit, a switching part, and a reading part. The magnetic unit includes a magnetic wire, and first and second magnetic parts. The magnetic wire includes magnetic domains and has one end and one other end. The first magnetic part is connected with the one end and has a first magnetization. The second magnetic part is connected with the one end, and has a second magnetization. The switching part includes first and second switches. The first switch is connected with the first magnetic part and flows a first current between the first magnetic part and the magnetic wire. The second switch is connected with the second magnetic part and flows a second current between the second magnetic part and the magnetic wire. The reading part is configured to read a magnetization of the magnetic domains. | 03-19-2015 |
Michael Arnaud Quinsat, Yokohama JP
Patent application number | Description | Published |
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20150243424 | MAGNETIC DEVICE - According to one embodiment, a magnetic device includes a first extending magnetic portion, a first conductive portion, a first inserted magnetic portion, and a first intermediate portion. The first extending magnetic portion is conductive, and includes a first magnetic region and a second magnetic region. The first magnetic region extends in a first extending direction, includes a first part, and has a first magnetization being changeable. The second magnetic region extends in the first extending direction, having a magnetization being changeable and different form the first magnetization. The first conductive portion is provided apart from the first part in a stacking direction intersecting the first extending direction. The first inserted magnetic portion is provided between the first conductive portion and the first part, and has a second magnetization being changeable. The first intermediate portion is provided between the first part and the first inserted magnetic portion. | 08-27-2015 |