| Patent application number | Description | Published |
|---|
| 20080299751 | SCHOTTKY DIODE AND METHOD THEREFOR - In one embodiment, a Schottky diode is formed on a semiconductor substrate with other semiconductor devices and is also formed with a high breakdown voltage and a low forward resistance. | 12-04-2008 |
| 20100022064 | HIGH VOLTAGE SENSOR DEVICE AND METHOD THEREFOR - In one embodiment, a high voltage element is formed overlying a doped semiconductor region that can be depleted during the operation of the high voltage element includes a conductor overlying a space in a resistor. | 01-28-2010 |
| 20100059815 | SEMICONDUCTOR TRENCH STRUCTURE HAVING A SEALING PLUG AND METHOD - In one embodiment, a semiconductor device is formed having a trench structure. The trench structure includes a single crystalline semiconductor plug formed along exposed upper surfaces of the trench. In one embodiment, the single crystalline semiconductor plug seals the trench to form a sealed core. | 03-11-2010 |
| 20100059849 | SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURE - A semiconductor component having a low resistance conduction path and a method for manufacturing the semiconductor component. When the semiconductor component is a Schottky diode, one or more trenches are formed in an epitaxial layer of a first conductivity type that is formed over a semiconductor substrate of the first conductivity type. The trenches may extend into the semiconductor material. Epitaxial semiconductor material of a second conductivity type is selectively grown along the sidewalls of the trenches. An anode contact is formed in contact with the epitaxial layer and the selectively grown epitaxial material and a cathode contact is formed in contact with the semiconductor substrate. | 03-11-2010 |
| 20100124793 | HIGH VOLTAGE SENSOR DEVICE AND METHOD THEREFOR - In one embodiment, a high voltage element is formed overlying a doped semiconductor region that can be depleted during the operation of the high voltage element includes a conductor overlying a space in a resistor. | 05-20-2010 |
| 20100304511 | METHOD OF SENSING A HIGH VOLTAGE - In one embodiment, a high voltage element is formed overlying a doped semiconductor region that can be depleted during the operation of the high voltage element includes a conductor overlying a space in a resistor. | 12-02-2010 |
| 20110233635 | SEMICONDUCTOR TRENCH STRUCTURE HAVING A SEALING PLUG - In one embodiment, a semiconductor device is formed having a trench structure. The trench structure includes a single crystalline semiconductor plug formed along exposed upper surfaces of the trench. In one embodiment, the single crystalline semiconductor plug seals the trench to form a sealed core. | 09-29-2011 |
