Patent application number | Description | Published |
20110089532 | INTEGRATED CIRCUIT WITH ESD STRUCTURE - An integrated circuit includes a semiconductor body of a first conductivity type. The semiconductor body includes a first semiconductor zone of a second conductivity type opposite the first conductivity type. The first semiconductor zone extends to a surface of the semiconductor body. A second semiconductor zone of the first conductivity type is embedded in the first semiconductor zone and extends as far as the surface. A third semiconductor zone of the second conductivity type at least partly projects from the first semiconductor zone along a lateral direction running parallel to the surface. A contact structure provides an electrical contact with the first and second semiconductor zones at the surface. The second semiconductor zone is arranged, along the lateral direction, between the part of the third semiconductor zone which projects from the first semiconductor zone and a part of the contact structure in contact with the first semiconductor zone. | 04-21-2011 |
20120133024 | Semiconductor Device and Method for Manufacturing a Semiconductor Device - According to an embodiment, a method for manufacturing a semiconductor device is provided. The method includes providing a mask layer which is used as an implantation mask when forming a doping region and which is used as an etching mask when forming an opening and a contact element formed in the opening. The contact element is in contact with the doping region. | 05-31-2012 |
20130234146 | SEMICONDUCTOR DEVICE AND METHOD - A semiconductor device is disclosed. One embodiment includes a lateral HEMT (High Electron Mobility Transistor) structure with a heterojunction between two differing group III-nitride semiconductor compounds and a layer arranged on the heterojunction. The layer includes a group III-nitride semiconductor compound and at least one barrier to hinder current flow in the layer. | 09-12-2013 |
20130299842 | Contact Structures for Compound Semiconductor Devices - A semiconductor device includes a semiconductor body including a plurality of compound semiconductor layers and a two-dimensional charge carrier gas channel region formed in one of the compound semiconductor layers. The semiconductor device further includes a contact structure disposed in the semiconductor body. The contact structure includes a metal region and a doped region. The metal region extends into the semiconductor body from a first side of the semiconductor body to at least the compound semiconductor layer which includes the channel region. The doped region is formed in the semiconductor body between the metal region and the channel region so that the channel region is electrically connected to the metal region through the doped region. | 11-14-2013 |
20130334573 | Multi-Channel HEMT - A transistor device includes a semiconductor heterostructure including a plurality of alternating two-dimensional electron gasses (2DEGs) and two-dimensional hole gasses (2DHGs) extending in parallel at different depths in the semiconductor heterostructure. The 2DEGs form current channels of the transistor device. The transistor device further includes a source extending into the semiconductor heterostructure in contact with the 2DEGs at a first end of the current channels, and a drain extending into the semiconductor heterostructure in contact with the 2DEGs at an opposing second end of the current channels. The transistor device also includes a plurality of spaced apart gate structures extending into the semiconductor heterostructure and including an electrically conductive material separated from the surrounding semiconductor heterostructure by an insulating material. | 12-19-2013 |
20140042448 | High Breakdown Voltage III-Nitride Device - A semiconductor device includes a semiconductor body having a compound semiconductor material on a substrate. The compound semiconductor material has a channel region. A source region extends to the compound semiconductor material. A drain region also extends to the compound semiconductor material and is spaced apart from the source region by the channel region. An insulating region is buried in the semiconductor body between the compound semiconductor material and the substrate in an active region of the semiconductor device. The active region includes the source, the drain and the channel region of the device. The insulating region is discontinuous over a length of the channel region between the source region and the drain region. | 02-13-2014 |
20140210052 | Semiconductor Device and Method for Manufacturing a Semiconductor Device - According to an embodiment, a method for manufacturing a semiconductor device is provided. The method includes providing a mask layer which is used as an implantation mask when forming a doping region and which is used as an etching mask when forming an opening and a contact element formed in the opening. The contact element is in contact with the doping region. | 07-31-2014 |
20140367700 | High-Voltage Cascaded Diode with HEMT and Monolithically Integrated Semiconductor Diode - An embodiment of a cascaded diode having a breakdown voltage exceeding 300V includes an HEMT and a Si Schottky diode. The HEMT includes a gate, a drain, a source, and a two-dimensional electron gas channel region connecting the source and the drain and controlled by the gate. The HEMT has a breakdown voltage exceeding 300V. The Si Schottky diode is monolithically integrated with the HEMT. The Si Schottky diode includes a cathode connected to the source of the HEMT and an anode connected to the gate of the HEMT. The Si Schottky diode has a breakdown voltage less than 300V and a forward voltage less than or equal to 0.4V. The anode of the Si Schottky diode forms the anode of the cascaded diode and the drain of the HEMT forms the cathode of the cascaded diode. | 12-18-2014 |
20150104911 | SEMICONDUCTOR DEVICE AND METHOD - A semiconductor device is disclosed. One embodiment includes a lateral HEMT (High Electron Mobility Transistor) structure with a heterojunction between two differing group III-nitride semiconductor compounds and a layer arranged on the heterojunction. The layer includes a group III-nitride semiconductor compound and at least one barrier to hinder current flow in the layer. | 04-16-2015 |
20150221748 | METHOD OF MANUFACTURING A MULTI-CHANNEL HEMT - A method of manufacturing a transistor device includes forming a semiconductor heterostructure including a plurality of alternating two-dimensional electron gasses (2DEGs) and two-dimensional hole gasses (2DHGs) extending in parallel at different depths in the semiconductor heterostructure, the 2DEGs forming current channels of the transistor device, forming a source extending into the semiconductor heterostructure in contact with the 2DEGs at a first end of the current channels, forming a drain extending into the semiconductor heterostructure in contact with the 2DEGs at an opposing second end of the current channels, and forming a plurality of spaced apart gate structures extending into the semiconductor heterostructure and including an electrically conductive material separated from the surrounding semiconductor heterostructure by an insulating material. | 08-06-2015 |
20150255590 | Group III-Nitride-Based Enhancement Mode Transistor Having a Heterojunction Fin Structure - A Group III-nitride-based enhancement mode transistor having a heterojunction fin structure and a corresponding semiconductor device are described. | 09-10-2015 |
20150311312 | Method of Manufacturing a High Breakdown Voltage III-Nitride Device - A method of manufacturing a semiconductor device includes forming a semiconductor body including a compound semiconductor material on a substrate, the compound semiconductor material having a channel region, forming a source region extending to the compound semiconductor material, forming a drain region extending to the compound semiconductor material and spaced apart from the source region by the channel region, and forming an insulating region buried in the semiconductor body below the channel region between the compound semiconductor material and the substrate in an active region of the semiconductor device such that the channel region is uninterrupted by the insulating region. The active region includes the source, the drain and the channel region. The insulating region is discontinuous over a length of the channel region between the source region and the drain region. | 10-29-2015 |
Patent application number | Description | Published |
20120128662 | SUBSTITUTED IMIDAZOQUINOXALINES - The present invention relates to substituted imidazoquinoxaline compounds of general formula (I) as inhibitors of Mps-1 Kinase or TTK, and being active against inflammation and cancer. | 05-24-2012 |
20120263708 | SUBSTITUTED AMINOQUINOXALINES AS TYROSINE THREONINE KINASE INHIBITORS - The present invention relates to substituted aminoquinoxaline compounds of general formula (I) in which (II), R | 10-18-2012 |
20120328610 | TRIAZOLOPYRIDINES - The present invention relates to triazolopyridine compounds of general formula (I) which are Monopolar Spindle 1 kinase (Mps-1 or TTK) inhibitors: Formula (I), in which R | 12-27-2012 |
20120328611 | SUBSTITUTED TRIAZOLOPYRIDINES - The present invention relates to triazolopyridine compounds of general formula (I) which are Monopolar Spindle 1 kinase (Mps-1 or TTK) inhibitors: Formula (I), in which R | 12-27-2012 |
20130121994 | TRIAZOLOPYRIDINE DERIVATIVES - The present invention relates to triazolopyridine compounds of general formula (I) which are Monopolar Spindle 1 kinase (Mps-1 or TTK) inhibitors in which R | 05-16-2013 |
20130156756 | Substituted Triazolopyridines - The present invention relates to substituted triazolopyridine compounds of general formula (I): in which R | 06-20-2013 |
20130195848 | IMIDAZOPYRAZINES - The present invention relates to imidazopyrazine compounds of general Formula (I): in which X, R | 08-01-2013 |
20140249133 | SUBSTITUTED BENZYLINDAZOLES FOR USE AS BUB1 KINASE INHIBITORS IN THE TREATMENT OF HYPERPROLIFERATIVE DISEASES - Compounds of formula (I) which are inhibitors of Bub1 kinase, processes for their production and their use as pharmaceuticals. | 09-04-2014 |
20140315934 | SUBSTITUTED BENZYLPYRAZOLES - Compounds of formula (I) and their use as pharmaceutical. | 10-23-2014 |
20150141372 | SUBSTITUTED CYCLOALKENOPYRAZOLES AS BUB1 INHIBITORS FOR THE TREATMENT OF CANCER - Compounds of formula (I), processes for their production and their use as Bub1 kinase inhibitors for the treatment of hyperproliferative diseases and/or disorders responsive to induction of cell death. | 05-21-2015 |
20150368260 | AMINO-SUBSTITUTED ISOTHIAZOLES - The present invention relates to isothiazoles of general formula (I) which inhibit the mitotic checkpoint: in which A, R1 and R2 are as defined in the claims, to methods of preparing said compounds, to intermediate compounds useful for preparing said compounds, to pharmaceutical compositions and combinations comprising said compounds and to the use of said compounds for manufacturing a pharmaceutical composition for the treatment or prophylaxis of a disease, in particular of neoplasms, as a sole agent or in combination with other active ingredients. | 12-24-2015 |