Patent application number | Description | Published |
20080295970 | SYSTEM AND METHOD OF TRANSFER PRINTING AN ORGANIC SEMICONDUCTOR - The present invention provides a substrate having thereon a patterned small molecule organic semiconductor layer. The present invention also provides a method and a system for producing a substrate having thereon a patterned small molecule organic semiconductor layer. The substrate having thereon a patterned small molecule organic semiconductor layer is produced by exposing a donor substrate having thereon a small molecule organic semiconductor layer to energy to cause the thermal transfer of a small organic molecule onto an acceptor substrate. | 12-04-2008 |
20090297774 | Methods of growing heterepitaxial single crystal or large grained semiconductor films and devices thereon - A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor, which are vapor deposited at a fixed temperature on relatively inexpensive buffered substrates, such as glass. Such films could have widespread application in photovoltaic and display technologies. | 12-03-2009 |
20090312529 | MOLECULAR MANIPULATOR, A METHOD OF MAKING THE SAME, AND A METHOD OF MOVING A NANOSTRUCTURE - A molecular manipulator includes a light-sensitive molecule, including a double bond, which changes a cis-trans configuration of the double bond in response to illumination by light of a selected wavelength, and a probe, for example, a probe of a scanned-proximity probe microscope, to which the light-sensitive molecule is attached. A method of making the molecular manipulator includes covalently bonding the light-sensitive molecule to the probe. A method of moving a nanostructure includes controllably grasping, moving, and releasing the nanostructure with the molecular manipulator. | 12-17-2009 |
20090313731 | MOLECULAR MANIPULATOR, A METHOD OF MAKING THE SAME, AND A METHOD OF MOVING A NANOSTRUCTURE - A molecular manipulator includes a light-sensitive molecule, including a double bond, which changes a cis-trans configuration of the double bond in response to illumination by light of a selected wavelength, and a probe, for example, a probe of a scanned-proximity probe microscope, to which the light-sensitive molecule is attached. A method of making the molecular manipulator includes covalently bonding the light-sensitive molecule to the probe. A method of moving a nanostructure includes controllably grasping, moving, and releasing the nanostructure with the molecular manipulator. | 12-17-2009 |
20090316096 | MULTI-DOMAIN AND IPS LIQUID-CRYSTAL DISPLAY USING DRY ALIGNMENT - The present invention includes a method of preparing a dry deposited liquid-crystal alignment layer using one of a mechanical mask, photo-resist, UV treatment, and ridge and fringe field methods. The present invention further provides a multi-domain, wide viewing angle liquid-crystal display, comprising: a bottom substrate; a first transparent conductive layer; a top substrate; a color filter layer; a second transparent conductive layer; a first dry deposited liquid-crystal alignment layer; a second dry deposited liquid-crystal alignment layer, the second dry deposited liquid-crystal alignment layer being spaced adjacent to and facing the first dry deposited liquid-crystal alignment layer; spacers; and a liquid-crystal material. Each of the first alignment layer and the second alignment layer is divided into a plurality of pixels each having a boundary and at least two domains and the domains of each of the multi-domain, dry deposited liquid-crystal alignment layers is obtained by a method selected from the group consisting of: a mechanical mask, photo-resist, UV treatment, and ridge and fringe field. The multi-domain, wide viewing angle liquid-crystal display of the present invention can be operated in the in-plane switching mode, which results in reduced image sticking. | 12-24-2009 |
20100237272 | METHODS OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS AND DEVICES THEREON - A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies. | 09-23-2010 |
20110033969 | METHODS OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS AND DEVICES THEREON - A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies. | 02-10-2011 |
20120142536 | ENHANCING CRITICAL CURRENT DENSITY OF CUPRATE SUPERCONDUCTORS - The present invention concerns the enhancement of critical current densities in cuprate superconductors. Such enhancement of critical current densities include using wave function symmetry and restricting movement of Abrikosov (A) vortices, Josephson (J) vortices, or Abrikosov-Josephson (A-J) vortices by using the half integer vortices associated with d-wave symmetry present in the grain boundary. | 06-07-2012 |
20120252192 | METHOD OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS ON GLASS SUBSTRATES AND DEVICES THEREON - Inexpensive semiconductors are produced by depositing a single crystal or large grained silicon on an inexpensive substrate. These semiconductors are produced at low enough temperatures such as temperatures below the melting point of glass. Semiconductors produced are suitable for semiconductor devices such as photovoltaics or displays | 10-04-2012 |
20130284258 | METHODS OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS AND DEVICES THEREON - A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies. | 10-31-2013 |
20140116329 | METHODS OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS AND DEVICES THEREON - A method is disclosed for making sapphire glass, consisting of a layer of sapphire on glass. The sapphire layer, or crystalline Al | 05-01-2014 |
20140141601 | METHODS OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS AND DEVICES THEREON - A method is provided for producing field effect transistors (FETs) for display applications. The method involves low temperature deposition of semiconductor films on inexpensive substrates such as ordinary soda-lime glass or borosilicate glass. | 05-22-2014 |
20140206126 | METHODS OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS ON GLASS SUBSTRATES AND DEVICES THEREON - A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies. | 07-24-2014 |
20140299047 | METHOD OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS ON GLASS SUBSTRATES AND DEVICES THEREON - Inexpensive semiconductors are produced by depositing a single crystal or large grained silicon on an inexpensive substrate. These semiconductors are produced at low enough temperatures such as temperatures below the melting point of glass. Semiconductors produced are suitable for semiconductor devices such as photovoltaics or displays | 10-09-2014 |
20140331915 | METHOD OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS ON GLASS SUBSTRATES AND DEVICES THEREON - Inexpensive semiconductors are produced by depositing a single crystal or large grained silicon on an inexpensive substrate. These semiconductors are produced at low enough temperatures such as temperatures below the melting point of glass. Semiconductors produced are suitable for semiconductor devices such as photovoltaics or displays | 11-13-2014 |