Patent application number | Description | Published |
20110068332 | Hybrid Dielectric Material for Thin Film Transistors - Thin-film transistors are made using a hybrid silica-silicone material as an insulating material. The hybrid silica-silicone material may be deposited by plasma-enhanced chemical vapor deposition from siloxanes and oxygen. These hybrid materials may be employed as the gate dielectric, as a subbing layer, and/or as a back channel passivating layer. The transistors may be made in any conventional TFT geometry. | 03-24-2011 |
20110180789 | Hybrid Dielectric Material for Thin Film Transistors - Thin-film transistors are made using an organosilicate glass (OSG) as an insulator material. The organosilicate glasses may be SiO | 07-28-2011 |
20120068162 | PERMEATION BARRIER FOR ENCAPSULATION OF DEVICES AND SUBSTRATES - A permeation barrier film structure for organic electronic devices includes one or more bilayers having a hybrid permeation barrier composition. Each of the one or more bilayers includes a first region having a first composition corresponding to a first CF | 03-22-2012 |
20120181933 | OLED LIGHTING DEVICE WITH SHORT TOLERANT STRUCTURE - A first device that may include a short tolerant structure, and methods for fabricating embodiments of the first device, are provided. A first device may include a substrate and a plurality of OLED circuit elements disposed on the substrate. Each OLED circuit element may include a fuse that is adapted to open an electrical connection in response to an electrical short in the pixel. Each OLED circuit element may comprise a pixel that may include a first electrode, a second electrode, and an organic electroluminescent (EL) material disposed between the first and the second electrodes. Each of the OLED circuit elements may not be electrically connected in series with any other of the OLED circuit elements. | 07-19-2012 |
20120286302 | Flexible Lighting Devices - A first device and methods for manufacturing the first device are provided. The first device may comprise a flexible substrate and at least one organic light emitting device (OLED) disposed over the flexible substrate. The first device may have a flexural rigidity between 10 | 11-15-2012 |
20120286651 | Simplified Patterned Light Panel - A first device may be provided in some embodiments. The first device may comprise a substrate, a first emissive region, and a second emissive region, where the first emissive region and the second emissive region may comprise a contiguous area. The first device may further comprise a first electrode disposed over the substrate that extends across the first and the second emissive regions, and an organic layer disposed over the substrate that extends across the first and second emissive regions, where the organic layer comprises the same emissive material across the first and the second emissive regions. The first device may further include a second electrode disposed over the substrate that extends across the first and second emissive regions, where the second electrode includes a patterned layer of conductive material that is disposed in the first emissive region and that is not disposed in the second emissive region. | 11-15-2012 |
20130146875 | SPLIT ELECTRODE FOR ORGANIC DEVICES - A device is provided. The device includes a first electrode, an organic layer disposed over the first electrode and a second electrode disposed over the organic layer. The second electrode further includes a first conductive layer having an extinction coefficient and an index of refraction, a first separation layer disposed over the first conductive layer, and a second conductive layer disposed over the first separation layer. The first separation layer has an extinction coefficient that is at least 10% different from the extinction coefficient of the first conductive layer at 500 nm, or an index of refraction that is at least 10% different from the index of refraction of the first conductive layer at 500 nm. The device also includes a barrier layer disposed over the second conductive layer. | 06-13-2013 |
20130202782 | Thin Film Permeation Barrier For Devices And Substrates - A method for fabricating a device having a barrier layer over a substrate is provided. A first sublayer of the barrier layer may be deposited via chemical vapor deposition using a first set of deposition parameters. The first set of deposition parameters may include a power density, a deposition pressure, a non-deposition gas flow rate and a deposition gas flow rate. One or more parameters may be set related to the flow ratio of non-deposition gas to deposition gas multiplied by the power density, or the power density divided by (1) the deposition pressure, (2) the sum of the non-deposition gas flow rate and the deposition gas flow rate, or (3) the precursor gas flow rate. The material of the first barrier layer may be selected to have a particular plasma etch rate compared to the etch rate of thermally growth silicon oxide under the same etching conditions. | 08-08-2013 |
20130241076 | ELECTRONIC DEVICE WITH REDUCED NON-DEVICE EDGE AREA - A first product may be provided that comprises a substrate having a first surface, a first side, and a first edge where the first surface meets the first side; and a device disposed over the substrate, the device having a second side, where at least a first portion of the second side is disposed within 3 mm from the first edge of the substrate. The first product may further comprise a first barrier film that covers at least a portion of the first edge of the substrate, at least a portion of the first side of the substrate, and at least the first portion of the second side of the device. | 09-19-2013 |
20130244079 | EDGE BARRIER FILM FOR ELECTRONIC DEVICES - In some embodiments, a first product is provided. The first product may include a substrate, a device having a device footprint disposed over the substrate, and a barrier film disposed over the substrate and substantially along a side of the device footprint. The barrier film may comprise a mixture of a polymeric material and non-polymeric material. The barrier film may have a perpendicular length that is less than or equal to 3.0 mm from the side of the device footprint. | 09-19-2013 |
20130334510 | ELECTRONIC DEVICES WITH IMPROVED SHELF LIVES - Embodiments of the present invention provide electronic devices such as OLEDs that have enhanced mechanical integrity and prolonged shelf, by minimizing the spread of a delamination region using topographical non-uniformities introduced in the device structure. For example, a device may be made deliberately non-planar by introducing multiple energy barriers which can prevent or minimize the propagation of a delamination, because the delamination will have to cross the energy barriers in order to spread to a larger area. | 12-19-2013 |
20140049923 | THIN FILM DISPOSITION - A method of preparing a surface for deposition of a thin film thereon, wherein the surface including a plurality of protrusions extending therefrom and having shadowed regions, includes locally treating at least one of the protrusions. | 02-20-2014 |
20140087497 | BARRIER FILM FOR ELECTRONIC DEVICES AND SUBSTRATES - Methods for forming a coating over a surface are disclosed. A method includes directing a first source of barrier film material toward a substrate in a first direction at an angle θ relative to the substrate, wherein θ is greater than about 0° and less than about 85°. Additionally, a method of depositing a barrier film over a substrate includes directing a plurality of N sources of barrier film material toward a substrate, each source being directed at an angle θ | 03-27-2014 |
20140098549 | SEMI-RIGID ELECTRONIC DEVICE WITH A FLEXIBLE DISPLAY - A semi-rigid electronic device is disclosed that includes a flexible panel and a housing. The housing may have a physical dimension L, such as length, height, or a diagonal. The minimum bending device radius of the device along the dimension L may be L/pi when held at an edge. The bending radius increases the more rigid the device. The housing, electronic components, and display may each contribute to the flexibility of the overall device. The housing and/or the flexible panel may also include one or more ribs to constrain movement of the semi-rigid device. | 04-10-2014 |
20140166989 | MANUFACTURING FLEXIBLE ORGANIC ELECTRONIC DEVICES - A method of forming microelectronic systems on a flexible substrate includes depositing (typically sequentially) on a first side of the flexible substrate at least one organic thin film layer, at least one electrode and at least one thin film encapsulation layer over the at least one organic thin film layer and the at least one electrode, wherein depositing the at least one organic thin film layer, depositing the at least one electrode and depositing the at least one thin film encapsulation layer each occur under vacuum and wherein no physical contact of the at least one organic thin film layer or the at least one electrode with another solid material occurs prior to depositing the at least one thin film encapsulation layer. | 06-19-2014 |
20140166990 | MANUFACTURING FLEXIBLE ORGANIC ELECTRONIC DEVICES - A method of forming microelectronic systems on a flexible substrate includes depositing a plurality of layers on one side of the flexible substrate. Each of the plurality of layers is deposited from one of a plurality of sources. A vertical projection of a perimeter of each one of the plurality of sources does not intersect the flexible substrate. The flexible substrate is in motion during the depositing the plurality of layers via a roll to roll feed and retrieval system. | 06-19-2014 |
20140248727 | Flexible Lighting Devices - A first device and methods for manufacturing the first device are provided. The first device may comprise a flexible substrate and at least one organic light emitting device (OLED) disposed over the flexible substrate. The first device may have a flexural rigidity between 10 | 09-04-2014 |
20150069370 | SPLIT ELECTRODE FOR ORGANIC DEVICES - A device includes a first electrode, an organic layer disposed over the first electrode and a second electrode disposed over the organic layer. The second electrode includes a first conductive layer, a first separation layer disposed over the first conductive layer, and a second conductive layer disposed over the first separation layer, wherein the first separation layer is not a continuous layer and the first and second conductive layers are bridged where the first separation layer is not continuous. The first separation layer has an extinction coefficient that is at least 10% different from the extinction coefficient of the first conductive layer at wavelength 500 nm, or an index of refraction that is at least 10% different from the index of refraction of the first conductive layer at wavelength 500 nm. | 03-12-2015 |