Patent application number | Description | Published |
20100155807 | Apparatus and methods for improved flash cell characteristics - Embodiments of an apparatus and methods for providing improved flash memory cell characteristics are generally described herein. Other embodiments may be described and claimed. | 06-24-2010 |
20110080789 | AUTOMATIC SELECTIVE SLOW PROGRAM CONVERGENCE - Apparatus, methods, and systems are disclosed, including those to improve program voltage distribution width using automatic selective slow program convergence (ASSPC). One such method may include determining whether a threshold voltage (Vt) associated with a memory cell has reached a particular pre-program verify voltage. In response to the determination, a voltage applied to a bit-line coupled to the memory cell may be automatically incremented at least twice as the program voltage is increased, until the cell is properly programmed. Additional embodiments are also described. | 04-07-2011 |
20110141822 | Source Bias Shift for Multilevel Memories - The threshold voltage range of a multilevel memory cell may be increased without using a negative voltage pump. In one embodiment, an added positive voltage may be applied to the source of the selected cell. A boost voltage may be applied to the output of a sense amplifier. Non-ideal characteristics of a buffer that supplies the voltage to the selected cell may be compensated for in some embodiments. | 06-16-2011 |
20110216600 | DRAIN SELECT GATE VOLTAGE MANAGEMENT - Some embodiments include apparatus, systems, and methods that operate to apply a first value of a drain select gate voltage during a first portion of a programming time period associated with programming a plurality of memory cells, and to apply a second value of the drain select gate voltage different from the first value during a second, subsequent portion of the programming time period. The drain select gate voltage may be changed between groups of programming pulses in a single programming cycle. The first and second portions may be determined according to the number of applied programming pulses, the number of memory cells that have been completely programmed, and/or other conditions. Additional apparatus, systems, and methods are disclosed. | 09-08-2011 |
20120002482 | CHARGE EQUILIBRIUM ACCELERATION IN A FLOATING GATE MEMORY DEVICE VIA A REVERSE FIELD PULSE - Methods for accelerating charge equilibrium in a non-volatile memory device using floating gate memory cells are disclosed. Memory devices and storage systems using charge equilibrium acceleration are also disclosed. In one such method, a programming pulse is applied to the word line to change an amount of charge stored on the floating gate of the memory cells being programmed. A reverse field pulse is then applied to the memory cell using only voltages greater than or equal to about 0 volts. The reverse field pulse accelerates charge equilibrium by moving any electrons trapped in the insulating oxide layers to a stable location so that the threshold voltage is stabilized. After the reverse field pulse, a program verify operation is performed and additional programming pulses and reverse field pulses are applied as needed to properly program the memory cell. | 01-05-2012 |
20120117306 | SENSE OPERATION FLAGS IN A MEMORY DEVICE - Memory devices, methods for programming sense flags, methods for sensing flags, and memory systems are disclosed. In one such memory device, the odd bit lines of a flag memory cell array are connected with a short circuit to a dynamic data cache. The even bit lines of the flag memory cell array are disconnected from the dynamic data cache. When an even page of a main memory cell array is read, the odd flag memory cells, comprising flag data, are read at the same time so that it can be determined whether the odd page of the main memory cell array has been programmed. If the flag data indicates that the odd page has not been programmed, threshold voltage windows can be adjusted to determine the states of the sensed even memory cell page. | 05-10-2012 |
20120176843 | MEMORIES AND METHODS OF PROGRAMMING MEMORIES - Apparatus and methods for adjusting programming for upper pages of memories are disclosed. In at least one embodiment, a threshold voltage distribution upper limit is determined after a single programming pulse for lower page programming, and upper page programming start voltages are adjusted based on the determined upper limit of the threshold voltage distribution. | 07-12-2012 |
20130215680 | AUTOMATIC SELECTIVE SLOW PROGRAM CONVERGENCE - Apparatus, methods, and systems are disclosed, including those to improve program voltage distribution width using automatic selective slow program convergence (ASSPC). One such method may include determining whether a threshold voltage (Vt) associated with a memory cell has reached a particular pre-program verify voltage. In response to the determination, a voltage applied to a bit-line coupled to the memory cell may be automatically incremented at least twice as the program voltage is increased, until the cell is properly programmed. Additional embodiments are also described. | 08-22-2013 |
20130318395 | RECONSTRUCTING CODEWORDS USING A SIDE CHANNEL - Embodiments of the present disclosure describe device, methods, computer-readable media and system configurations for decoding codewords using a side channel. In various embodiments, a memory controller may be configured to determine that m of n die of non-volatile memory (“NVM”) have failed iterative decoding. In various embodiments, the memory controller may be further configured to generate a side channel from n-m non-failed die and the m failed die other than a first failed die. In various embodiments, the memory controller may be further configured to reconstruct, using iterative decoding, a codeword stored on the first failed die of the m failed die based on the generated side channel and on soft input to an attempt to iteratively decode data stored on the first failed die. In various embodiments, the iterative decoding may include low-density parity-check decoding. Other embodiments may be described and/or claimed. | 11-28-2013 |
20130322170 | MEMORY CELL SENSING - This disclosure concerns memory cell sensing. One or more methods include determining a data state of a first memory cell coupled to a first data line, determining a data state of a third memory cell coupled to a third data line, transferring determined data of at least one of the first and the third memory cells to a data line control unit corresponding to a second data line to which a second memory cell is coupled, the second data line being adjacent to the first data line and the third data line, and determining a data state of the second memory cell based, at least partially, on the transferred determined data. | 12-05-2013 |
20130339603 | METHOD, APPARATUS AND SYSTEM FOR DETERMINING ACCESS TO A MEMORY ARRAY - Techniques and mechanisms for determining a sequence of accessed to a memory array. In an embodiment, a memory array includes multi-level cells and single-level cells interleaved with one another, where bits of the multi-level cells and single-level cells are variously allocated to different logical pages. In another embodiment, requests to access the memory array are ordered according to a sequence of page rounds to avoid an access event which includes a type of successive accessing of adjacent multi-level cells. | 12-19-2013 |
20140063960 | MEMORY PROGRAM DISTURB REDUCTION - Some embodiments include a memory device and a method of programming memory cells of the memory device. One such method can include applying, during a first pass of programming, a first bias voltage value to a source select gate to isolate memory cells from a source, applying a programming voltage to an access line of a page of the memory cells during the first pass of programming, and applying a second bias voltage value to the source select gate to isolate the memory cells from the source during a second pass of programming. Further devices, systems, and methods are disclosed. | 03-06-2014 |
20140115231 | NAND MEMORY MANAGEMENT - Apparatus, systems, and methods manage NAND memory are described. In one embodiment, an apparatus comprises a memory controller logic to apply a binary parity check code to a binary string and convert the binary string to a ternary string. Other embodiments are also disclosed and claimed. | 04-24-2014 |
20140169093 | ERASE AND SOFT PROGRAM FOR VERTICAL NAND FLASH - Methods, and apparatuses to erase and or soft program a block of NAND memory may include performing an erase cycle on a block of NAND memory comprising two or more sub-blocks, verifying the two or more sub-blocks until a sub-block fails to verify, stopping the verification in response to the failed verify, performing another erase cycle on the block of NAND memory, and re-starting to verify the two or more sub-blocks at the sub-block that failed to verify | 06-19-2014 |
20140185385 | MEMORIES AND METHODS OF PROGRAMMING MEMORIES - Apparatus and methods for adjusting programming for upper pages of memories are disclosed. In at least one embodiment, a threshold voltage distribution upper limit is determined after a single programming pulse for lower page programming, and upper page programming start voltages are adjusted based on the determined upper limit of the threshold voltage distribution. | 07-03-2014 |
20140313825 | DRAIN SELECT GATE VOLTAGE MANAGEMENT - Some embodiments include apparatus, systems, and methods that operate to apply a first value of a drain select gate voltage during a first portion of a programming time period associated with programming a plurality of memory cells, and to apply a second value of the drain select gate voltage different from the first value during a second, subsequent portion of the programming time period. The drain select gate voltage may be changed between groups of programming pulses in a single programming cycle. The first and second portions may be determined according to the number of applied programming pulses, the number of memory cells that have been completely programmed, and/or other conditions. Additional apparatus, systems, and methods are disclosed. | 10-23-2014 |
20140380108 | METHOD AND SYSTEM TO OBTAIN STATE CONFIDENCE DATA USING MULTISTROBE READ OF A NON-VOLATILE MEMORY - An apparatus may include a processor circuit a processor circuit to retrieve data from a non-volatile memory, and a multistrobe read module operable on the processor circuit to set a read operation to read a memory cell over a multiplicity of sense operations, where each sense operation is performed under a different sense condition. The multistrobe read module may be further operable to schedule a new sense operation to succeed a prior sense operation of the multiplicity of sense operations without recharge of the wordline when a value of one or more read condition is within a preset range. Other embodiments are disclosed and claimed. | 12-25-2014 |
20150043275 | MULTI-PULSE PROGRAMMING FOR MEMORY - Embodiments of the present disclosure include techniques and configurations for multi-pulse programming of a memory device. In one embodiment, a method includes applying multiple pulses to program one or more multi-level cells (MLCs) of a memory device, wherein individual pulses of the multiple pulses correspond with individual levels of the one or more MLCs and subsequent to applying the multiple pulses, verifying the programming of the individual levels of the one or more MLCs. Other embodiments may be described and/or claimed. | 02-12-2015 |