Patent application number | Description | Published |
20080278426 | Method and Apparatus for Driving LCD Panel for Displaying Image Data - A method for driving an LCD panel for displaying image data includes generating a random code sequence including a plurality of random codes with values equal to a first value or a second value, generating a plurality of driving voltages corresponding to a plurality of pixels in the LCD panel according to the image data, adjusting polarities of the plurality of driving voltages according to the random code sequence, and driving the plurality of pixels with the plurality of driving voltages after polarity adjustment. | 11-13-2008 |
20080278463 | Driving Device and Related Source Driver of a Flat Panel Display - A driving device of a flat panel display includes a scan-line-signal output circuit for outputting gate driving signals to a display panel of the flat panel display, and a data-line-signal output circuit including a plurality of source drivers for outputting a plurality of source driving signals to the display panel. Each source driver includes an interface reception unit for receiving video signals and generating corresponding image data and control signals, an image transformation unit for generating a source driving signal to the display panel according to image data, a timing control unit for controlling timing of the source driving signal outputted from the image transformation unit, and a logic unit for controlling factors the source driving signal outputted from the image transformation unit by controlling the image transformation unit and the timing control unit. | 11-13-2008 |
20080316158 | Driving Method and Apparatus for an LCD Panel - A driving method for an LCD panel includes generating a sequence, generating a plurality of gate driving signals, determining a gate-on sequence of the plurality of gate driving signals according to the sequence, and driving pixels of the LCD panel using the plurality of gate driving signals according to the gate-on sequence for displaying images. | 12-25-2008 |
20090135171 | VOLTAGE GENERATING SYSTEM - A voltage generating system applied to a display driving apparatus is disclosed, which is capable of changing a time point at which a signal of a pixel electrode and a signal of a common electrode perform polarity inversion, so as to adjust the frequency of an AC common voltage dynamically. Therefore, the noise frequency caused by the transition of the AC common voltage is dispersed, and the energy of audio-frequency noises and high-frequency noises is reduced. | 05-28-2009 |
20090153532 | PIXEL-DRIVING METHOD AND CIRCUIT THEREOF - A method for driving pixel, being compatible between dot-inversion driving mechanism and dual-gate driving mechanism, includes setting four continuous pixels as a driving sub-unit, having a first pixel transistor, a second pixel transistor, a third pixel transistor, and a fourth pixel transistor. The first gate line commonly controls two gates of the first and fourth pixel transistors. The second gate line commonly controls two gates of the second and third pixel transistors. The first source line commonly controls two sources of the first and second pixel transistors. The second source line commonly controls two sources of the third and fourth pixel transistors. A positive voltage and a negative voltage are alternatively in time sequence applied to the first and second source lines, respectively. An activate voltage is alternatively in time sequence applied to the first and second source lines, respectively. | 06-18-2009 |
20090289908 | TOUCH DETECTING DEVICE CAPABLE OF SAVING ELECTRICITY - A touch detecting device capable of saving power for a touch panel includes a touch sensing unit, a micro control unit and a mode detecting unit. The touch sensing unit is coupled to the touch panel and used for being triggered by a first control signal to generate sensing data according to a touch state of the touch panel. The micro control unit is coupled to the touch sensing unit and used for being triggered by a second control signal to generate the first control signal. The mode detecting unit is coupled to the micro control unit and the touch panel, and used for generating the second control signal according to the touch state of the touch panel. | 11-26-2009 |
20110141094 | VOLTAGE GENERATING SYSTEM - A voltage generating system applied to a display driving apparatus is disclosed, which is capable of changing a time point at which a signal of a pixel electrode and a signal of a common electrode perform polarity inversion according to a first sequence, so as to adjust the frequency of an AC common voltage dynamically. Therefore, the noise frequency caused by the transition of the AC common voltage is dispersed, and the energy of audio-frequency noises and high-frequency noises is reduced. | 06-16-2011 |
Patent application number | Description | Published |
20090142886 | METHOD OF FABRICATING THIN FILM TRANSISTOR STRUCTURE - A method of fabricating a thin film transistor (TFT) includes first providing a strip-shaped silicon island which is a thin film region with a predetermined long side and short side. Next, the strip-shaped silicon island is subject to an ion implantation to form a first ion doping region and a second ion doping region. The first and second ion doping regions, respectively used as the source and the drain of the TFT, are located at two sides along the long side of the island and substantially perpendicular to the gate. A gate is formed over the strip-shaped silicon island and the first and second ion doping regions, wherein the gate is substantially parallel to the direction of the short side. | 06-04-2009 |
20120061661 | SEMICONDUCTOR STRUCTURE AND FABRICATING METHOD THEREOF - A semiconductor structure and a fabricating method thereof are provided. The fabricating method includes forming a gate, a source, and a drain on a substrate and forming an oxide semiconductor material between the gate and the source and drain. The oxide semiconductor material is formed by performing a deposition process, and nitrogen gas is introduced before the deposition process is completely performed, so as to form oxide semiconductor nitride on the oxide semiconductor material. | 03-15-2012 |
20120298982 | High-Gain Complementary Inverter with Ambipolar Thin Film Transistors and Fabrication Thereof - The present invention relates to a high gain complementary inverter with ambipolar thin film transistors and fabrication thereof, comprising: a gate layer, a silica layer, a first active layer, a first source, a first drain, a second active layer, a second source and a second drain for fabrication cost and complexity reduction. | 11-29-2012 |
20120313104 | ANALOG MEMORY CELL CIRCUIT FOR THE LTPS TFT-LCD - The present invention provides an analog memory cell circuit for the LTPS TFT-LCD. The circuit comprises the first transistor, second transistor, the third transistor, the fourth transistor, the fifth transistor, the sixth transistor, the seventh transistor, and the capacitor. It comprises a plurality of operation period, wherein the transistors are controlled in accordance with the first scan signal, the second scan signal, and the third scan signal, the output signal is output in the opposite to the output jack. | 12-13-2012 |
20130171830 | METHOD FOR REMOVING GERMANIUM SUBOXIDE - A method for removing germanium suboxide between a germanium (Ge) substrate and a dielectric layer made of metal oxide includes causing a supercritical fluid composition that includes a supercritical carbon dioxide fluid and an oxidant to diffuse into the germanium suboxide such that metal residues in the dielectric layer, the germanium suboxide and the oxidant are subjected to a redox reaction so as to reduce the germanium suboxide into germanium. | 07-04-2013 |
20130320348 | Analog Memory Cell Circuit for the LTPS TFT-LCD - The present invention provides an analog memory cell circuit for the LTPS TFT-LCD. The circuit comprises the first transistor, second transistor, the third transistor, the fourth transistor, the fifth transistor, the sixth transistor, the seventh transistor, and the capacitor. It comprises a plurality of operation period, wherein the transistors are controlled in accordance with the first scan signal, the second scan signal, and the third scan signal, the output signal is output in the opposite to the output jack. | 12-05-2013 |
20140061569 | FLEXIBLE NON-VOLATILE MEMORY - A manufacturing method for manufacturing a flexible non-volatile memory is provided. The manufacturing method comprises the steps outlined below. A flexible substrate is provided. A planarization layer is formed on the flexible substrate. A metal bottom electrode layer is deposited on the planarization layer. A mask is formed to define a plurality of patterns. An AZTO layer having a plurality of electrically independent AZTO cells is deposited on the metal bottom electrode layer corresponding to the patterns. A top electrode layer is deposited on the AZTO layer corresponding to the AZTO cells to form a plurality of non-volatile memory cells. | 03-06-2014 |
20140133213 | RESISTIVE RANDOM ACCESS MEMORY DEVICE AND OPERATING METHOD THEREOF - A resistive random access memory (RRAM) device and operating method are disclosed herein. The RRAM device includes at least one RRAM cell and a control circuit. The RRAM cell includes a bottom electrode, an amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) layer, a Ti layer and a top electrode. The a-IGZO layer is disposed on the bottom layer. The Ti layer is disposed on the a-IGZO layer. The top electrode is disposed on the Ti layer. The control circuit is configured to provide at least one electrical signal to the RRAM cell, so as to change the resistance value of the RRAM cell. | 05-15-2014 |
20140193964 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The present invention provides a method of manufacturing a semiconductor device. The method at least comprises the following steps. First, the semiconductor device, which comprises a gate, a gate dielectric layer, an active layer, a source and a drain, is manufactured. However, the semiconductor device has a plurality of defects, and the active layer is a metal oxide thin film. After annealing the semiconductor device, it will be transferred into a chamber. A final step of injecting a supercritical fluid carried with a co-solvent into the chamber is then performed to modify the abovementioned defects. | 07-10-2014 |
20140287561 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device is disclosed in the present invention. The abovementioned method comprises the following steps. Firstly, a gate is formed on a substrate. A gate insulating layer is then formed on the gate, and further an active layer is disposed on the gate insulating layer, wherein the active layer is composed of a microwave absorbing material. Source/drain is defined on the active layer to form the semiconductor device, and a microwave annealing process is finally performed thereon. | 09-25-2014 |
20140361287 | Thin film Transistor with UV light Absorber Layer - A thin film transistor comprises a transparent substrate, a gate is disposed on the transparent substrate, a gate insulator is disposed on the gate and the transparent substrate, an active layer is disposed on the gate insulator, an electrode layer is electrically connected the active layer and the portion of the active layer is exposed, and an ultraviolet light absorbing layer is disposed on the electrode layer. By using the advantage of the ultraviolet light absorbing layer with the range of visible light transmittance and with the component protection, preventing the optical characteristics of the thin film transistor from the outside moisture is achieved, and by adjusting the parameters in the thin film deposition process to change its conductivity. | 12-11-2014 |