Patent application number | Description | Published |
20080272378 | METHOD FOR FORMING A NITRIDE SEMICONDUCTOR LAYER AND METHOD FOR SEPARATING THE NITRIDE SEMICONDUCTOR LAYER FROM THE SUBSTRATE - There is provided a method of forming a nitride semiconductor layer, including the steps of firstly providing a substrate on which a patterned epitaxy layer with a pier structure is formed. A protective layer is then formed on the patterned epitaxy layer, exposing a top surface of the pier structure. Next, a nitride semiconductor layer is formed over the patterned epitaxy layer connected to the nitride semiconductor layer through the pier structure, wherein the nitride semiconductor layer, the pier structure, and the patterned epitaxy layer together form a space exposing a bottom surface of the nitride semiconductor layer. Thereafter, a weakening process is performed to remove a portion of the bottom surface of the nitride semiconductor layer and to weaken a connection point between the top surface of the pier structure and the nitride semiconductor layer. Finally, the substrate is separated from the nitride semiconductor layer through the connection point. | 11-06-2008 |
20090274883 | NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR FORMING THE SAME - An initial substrate structure for forming a nitride semiconductor substrate is provided. The initial substrate structure includes a substrate, a patterned epitaxial layer, and a mask layer. The patterned epitaxial layer is located on the substrate and is formed by a plurality of pillars. The mask layer is located over the substrate and covers a part of the patterned epitaxial layer. The mask layer includes a plurality of sticks and there is a space between the sticks. The space exposes a portion of an upper surface of the patterned epitaxial layer. | 11-05-2009 |
20100013054 | COMPOSITE MATERIAL SUBSTRATE - A composite material substrate having patterned structure includes a substrate, a first dielectric layer, a second dielectric layer, and a nitride semiconductor material. Herein, the first dielectric layer is stacked on the substrate, the second dielectric layer is stacked on the first dielectric layer, and the nitride semiconductor material is stacked on the second dielectric layer and is characterized by a plurality of patterns thereon. | 01-21-2010 |
20100090312 | Nitride semiconductor structure and method for manufacturing the same - A nitride semiconductor substrate and a method for manufacturing the same are provided. The nitride semiconductor substrate includes an epitaxy substrate, a nitride pillar layer, a nitride semiconductor layer, and a mask layer. The nitride pillar layer includes a plurality of first patterned arranged pillars and a plurality of second patterned arranged pillars. The nitride pillar layer is formed on the epitaxy substrate. A width of a cross-section of each of the second patterned arranged pillars is smaller than a width of a cross-section of each of the first patterned arranged pillars, and a distance among each of the second patterned arranged pillars is longer than a distance among each of the first patterned arranged pillars. Surfaces of the epitaxy substrate, the first patterned arranged pillars, and the second patterned arranged pillars are covered by the mask layer. The nitride semiconductor layer is formed on the nitride pillar layer. | 04-15-2010 |
20100181577 | NITRIDE SEMICONDUCTOR SUBSTRATE - There is provided a nitride semiconductor substrate. The nitride semiconductor substrate comprises a substrate, a patterned epitaxy layer, a protective layer and a gallium nitride semiconductor layer. The patterned epitaxy layer is disposed on the substrate, wherein the patterned epitaxy layer comprises a pier structure and the patterned epitaxy layer has an upper surface and a lower surface opposite to the upper surface and the lower surface faces to the substrate. The protective layer covers a portion of the upper surface of the patterned epitaxy layer to expose a top surface of the pier structure. The gallium nitride (GaN) semiconductor layer extends substantially across an entire area above the patterned epitaxy layer and connected to the exposed top surface of the pier structure. | 07-22-2010 |
20100243987 | DEVICE OF LIGHT-EMITTING DIODE AND METHOD FOR FABRICATING THE SAME - A device of a light-emitting diode and a method for fabricating the same are provided. The LED device is made by forming a patterned epitaxial layer, a light-emitting structure, etc., on a substrate. In a subsequent process, the patterned epitaxial layer serves as a weakened structure, and can be automatically broken and a rough surface is thus formed. The weakened structure is formed with a specified height, and has pillar structures. The light-emitting structure is formed on the weakened structure. During a cooling process at room temperature, the weakened structure is automatically broken and a rough surface is thus formed. | 09-30-2010 |
20110156047 | NITRIDE SEMICONDUCTOR TEMPLATE AND METHOD OF MANUFACTURING THE SAME - A nitride semiconductor template and a manufacturing method thereof are provided. The nitride semiconductor template includes a carrier substrate with a first thermal expansion coefficient, a nitride semiconductor layer with a second thermal expansion coefficient different from the first thermal expansion coefficient, and a bonding layer. The nitride semiconductor layer disposed on the carrier substrate is at least 10 μm in thickness. A ratio of a dislocation density of the nitride semiconductor layer at a first surface to that at a second surface is from 0.1 to 10. The bonding layer is disposed between the carrier substrate and the nitride semiconductor layer to adhere the nitride semiconductor layer onto the carrier substrate. The second surface is near an interface between the nitride semiconductor layer and the bonding layer, and the first surface is 10 μm from the second surface. | 06-30-2011 |
20120074383 | DEVICE OF LIGHT-EMITTING DIODE - A LED device is provided. The LED device has a conductive carrier substrate, a light-emitting structure, a plurality of pillar structures, a dielectric layer, a first electrode and a second electrode. The light-emitting structure is located on the conductive carrier substrate. The pillar structures are located on the light-emitting structure. The dielectric layer is to cover a sidewall of the pillar structure. The first electrode is located over the pillar structure, and the second electrode is located on the conductive carrier substrate. | 03-29-2012 |
20120085987 | LIGHT EMITTING DEVICE - A light emitting device is provided, which includes a light-emitting structure having an active layer and a magnetic material. The active layer includes at least one quantum well structure, and a thickness of at least one of the quantum well structure is greater than or substantially equal to 1.2 nm at room temperature. The magnetic material is coupled with the light-emitting structure to produce a magnetic field perpendicular to a surface of the active layer in the light-emitting structure. | 04-12-2012 |
20120119220 | NITRIDE SEMICONDUCTOR STRUCTURE - A nitride semiconductor substrate includes an epitaxy substrate, a patterned nitride semiconductor pillar layer, a nitride semiconductor layer, and a mask layer is provided. The nitride semiconductor pillar layer includes a plurality of first patterned arranged hollow structures and a plurality of second patterned arranged hollow structures formed among the first patterned arranged hollow structures. The second patterned arranged hollow structures have nano dimensions. The nitride semiconductor pillar layer is formed on the epitaxy substrate, and the nitride semiconductor layer is formed on the nitride semiconductor pillar layer. The mask layer covers surfaces of the nitride semiconductor pillar layer and the epitaxy substrate. | 05-17-2012 |