Patent application number | Description | Published |
20130209699 | Long-lasting water-repellent textile treatment process using an ambient temperature curable polydimethylsiloxane-containing polyurethane PU system - A long-lasting water-repellency textile application that uses a polydimethylsiloxane (PDMS)-containing polyurethane (PU) involves a manufacturing process of NCO-terminated PU prepolymer of PDMS diols and polyisocyanate with a catalyst for forming a moisture-curable PDMS-containing PU oligomer, or becoming an UV-curable PDMS-containing PU oligomer after a chemical reaction takes place. The PU oligomer owns PDMS moiety with water-repellent properties. The moisture- or UV-curable PU with NCO and acrylate end-groups can create cross-linked polymeric networks between fibers of textiles by exposing to the air or UV-radiation. The final cross-linked PDMS-containing PU treated textile demonstrates long-lasting water-repellent properties with an excellent soft hand feel and a breathable feature. Furthermore, the textile water-repellent treatment is cost-effective, and most importantly these two different curing processes could be carried out at ambient temperature without requiring any waste water discharge. Therefore, these textile water repellent treatments are considered as environmental friendly green processes. | 08-15-2013 |
20140242292 | POLYURETHANE PREPOLYMER PREPARED BY FUNCTIONAL POLYURETHANE PREPOLYMER AND APPLICATION THEREOF - A method of preparing polyurethane prepolymer does not require using a toxic isocyanate monomer (manufactured by harmful phosgene) as a raw material. Epoxy resin and carbon dioxide are used as major raw materials to form cyclic carbonates to be reacted with a functional group oligomer, and then amino groups in a hydrophilic (ether group) or hydrophobic (siloxane group) diamine polymer are used for performing a ring-opening polymerization, and the microwave irradiation is used in the ring-opening polymerization to efficiently synthesize the amino-terminated PU prepolymer, and then an acrylic group at an end is added to manufacture an UV cross-linking PU (UV-PU) oligomer which can be coated onto a fabric surface, and the fabric is dried by UV radiation for a surface treatment to form a washing-resisted long lasting hydrophilic or hydrophobic PU fabric. | 08-28-2014 |
20140308128 | FAN SYSTEM - A fan system suitable for an electronic device is provided. The fan system includes a fan module and a fan protecting module. The fan module includes a base and a fan blade assembly. The base is disposed at the electronic device and has a chamber. The fan blade assembly includes a fan blade and a shaft portion. The fan blade is fixed on the shaft portion. The shaft portion is rotatably contained in the chamber. The fan protecting module includes an electromagnetic component and an accelerometer. The electromagnetic component is disposed at a position adjacent to the shaft portion. The accelerometer is disposed in the electronic device and coupled to the electromagnetic component. When an acceleration of the electronic device detected by the accelerometer is greater than a threshold value, the electromagnetic component applies magnetic force to the shaft portion to prevent the shaft portion from overly shifting or deflecting. | 10-16-2014 |
20150039138 | VIBRATION SUPPRESSING APPARATUS AND VIBRATION SUPPRESSING METHOD THEREOF - A vibration suppressing apparatus and a vibration suppressing method thereof are provided. The vibration amplitude, vibration frequency, and vibration phase of a vibration suppressing unit are adjusted in real-time according to the vibration amplitude, vibration frequency and vibration phase of a vibration source. | 02-05-2015 |
20150098175 | HINGE STRUCTURE AND ELECTRONIC DEVICE HAVING THE SAME - A hinge structure includes a hinge, a first bracket, a second bracket and a third bracket. The first bracket and the second bracket are pivoted with each other through the hinge, wherein the second bracket has a first connecting portion. The third bracket has a second connecting portion, wherein the second connecting portion is rotatably connected to the first connecting portion. When the third bracket receives a force and wobbles, the second connecting portion rotates relatively to the first connecting portion, and a kinetic energy of the third bracket is consumed by a kinetic friction between the first connecting portion and the second connecting portion. In addition, an electronic device having the hinge structure is also provided. | 04-09-2015 |
20150116921 | ELECTRONIC DEVICE - An electronic device includes a first body, a second body, a first rotary shaft and a flexible display panel. The second body is movably connected to the first body and is adapted to lean against the first body or separate from the first body. The first rotary shaft is pivotally connected to the first body. The flexible display panel is connected between the first and second bodies. When the second body is at the first position, a first section of the flexible display panel is rolled around the first rotary shaft, and a second section of the flexible display panel is expanded between the first and second bodies. When the second body is at the second position, a part of the first section and the second section are expanded between the first and second bodies. | 04-30-2015 |
20150137723 | ELECTRONIC APPARATUS AND PROTECTING METHOD THEREOF - An electronic apparatus includes a first casing, a protected device, a detector, a first actuator and a controller. The protected device is spaced apart from the first casing by a first shortest distance. The detector is configured to detect a first early sign before a first collision of the first casing and the protected device. The controller is configured to actuate the first actuator after the detector detects the first early sign, causing an increase of the first shortest distance. | 05-21-2015 |
20160001712 | SWITCHING METHOD AND COMPUTER SYSTEM BASED ON SIGNAL INTENSITY - A switching method for a multimedia player of a vehicle includes setting an operational mode for playing a predetermined signal; the multimedia player receiving a broadcasted signal to determine whether an intensity signal corresponding to the broadcasted signal exceeds a threshold value when the multimedia player processes a broadcast mode; and the multimedia player processing the operational mode for playing the predetermined signal when the intensity signal corresponding to the broadcasted signal is smaller than the threshold signal; wherein the predetermined signal is a source signal from a CD/DVD multimedia player, an audio multimedia player or a mobile device, or is a silent signal. | 01-07-2016 |
Patent application number | Description | Published |
20140273371 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a transistor region and a resistor region; forming a shallow trench isolation (STI) on the resistor region of the substrate; forming a tank in the STI; and forming a resistor in the tank and on two sides of the top surface of the STI outside the tank. | 09-18-2014 |
20150079780 | METHOD OF FORMING SEMICONDUCTOR STRUCTURE - A method of forming a semiconductor device is disclosed. A gate structure is formed on a substrate. The gate structure includes a dummy gate and a spacer at a sidewall of the dummy gate. A dielectric layer is formed on the substrate outside of the gate structure. A metal hard mask layer is formed to cover tops of the dielectric layer and the spacer and to expose a surface of the gate structure. The dummy gate is removed to form a gate trench. A low-resistivity metal layer is formed on the metal hard mask layer filling in the gate trench. The low-resistivity metal layer outside of the gate trench is removed. The metal hard mask layer is removed. | 03-19-2015 |
20150140819 | SEMICONDUCTOR PROCESS - A semiconductor process includes the following steps. A substrate having trenches with different sizes is provided. A first oxide layer is formed to entirely cover the substrate. A prevention layer is formed on the first oxide layer. A first filling layer is formed on the prevention layer and fills the trenches until the first filling layer is higher than the substrate. A first polishing process is performed to polish the first filling layer until exposing the prevention layer. A second polishing process is performed to polish the first filling layer, the prevention layer and the first oxide layer until the substrate is exposed. | 05-21-2015 |
20150147874 | METHOD FOR FORMING A SEMICONDUCTOR STRUCTURE - The present invention provides a manufacturing method for forming a semiconductor structure, in which first, a substrate is provided, a hard mask is disposed on the substrate, the hard mask is then patterned to form a plurality of fin hard masks and a plurality of dummy fin hard masks, afterwards, a pattern transferring process is performed, to transfer the patterns of the fin hard masks and the fin hard masks into the substrate, so as to form a plurality of fin groups and a plurality of dummy fins. Each dummy fin is disposed on the end side of one fin group, and a fin cut process is performed, to remove each dummy fin. | 05-28-2015 |
20150162419 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device includes the following steps. A substrate including at least a fin structure is provided, and a material layer is formed to cover the fin structure. Then, a first planarization process is performed on the material layer to form a first material layer, and an oxide layer is formed on the first material layer. Subsequently, the oxide layer is totally removed to expose the first material layer, and a second material layer is formed in-situ on the first material layer after totally removing the oxide layer. | 06-11-2015 |
20150214114 | MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE - A manufacturing method of a semiconductor structure is disclosed. The manufacturing method includes the following steps. A substrate with a plurality of dummy gate structures formed thereon and a first dielectric layer covering the dummy gate structures is provided, the dummy gate structures comprising a plurality of dummy gates and a plurality of insulating layers formed on the dummy gates, wherein at least two of the dummy gate structures have different heights. A first planarization process is performed to expose at least one of the dummy gate structures having the highest height. A first etching process is performed to expose the insulating layers. A chemical mechanical polishing (CMP) process with a non-selectivity slurry is performed to planarize the dummy gate structures. The planarized dummy gate structures are removed to form a plurality of gate trenches. | 07-30-2015 |
20150325574 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND DEVICE MANUFACTURED BY THE SAME - A method for manufacturing a semiconductor device and a device manufactured by the same are provided. According to the embodiment, a substrate having at least a first area with a plurality of first gates and a second area with a plurality of second gates is provided, wherein the adjacent first gates and the adjacent second gates separated by an insulation, and a top surface of the insulation has a plurality of recesses. Then, a capping layer is formed over the first gate, the second gates and the insulation, and filling the recesses. The capping layer is removed until reaching the top surface of the insulation, thereby forming the insulating depositions filling up the recesses, wherein the upper surfaces of the insulating deposition are substantially aligned with the top surface of the insulation. | 11-12-2015 |
20160027679 | METHOD FOR REPAIRING AN OXIDE LAYER AND METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE APPLYING THE SAME - A method for repairing an oxide layer and a method for manufacturing a semiconductor structure applying the same are provided. The method for repairing an oxide layer comprises following steps. First, a carrier having a first area and a second area is provided, wherein a repairing oxide layer is formed on the second area. Then, the carrier is attached to a substrate with an oxide layer to be repaired formed thereon, wherein the carrier and the substrate are attached to each other through the repairing oxide layer and the oxide layer to be repaired. Thereafter, the oxide layer to be repaired is bonded with the repairing oxide layer. | 01-28-2016 |
20160099179 | METHOD OF FORMING SEMICONDUCTOR DEVICE - A method of forming a semiconductor device is disclosed. A substrate having multiple fins is provided. An insulating layer fills a lower portion of a gap between two adjacent fins. At least one first stacked structure is formed on one fin and at least one second stacked structure is formed on one insulation layer. A first dielectric layer is formed to cover the first and second stacked structures. A portion of the first dielectric layer and portions of the first and second stacked structures are removed. Another portion of the first dielectric layer is removed until a top of the remaining first dielectric layer is lower than tops of the first and second stacked structures. A second dielectric layer is formed to cover the first and second stacked structures. A portion of the second dielectric layer is removed until the tops of the first and second stacked structures are exposed. | 04-07-2016 |
Patent application number | Description | Published |
20090092858 | PERPENDICULAR MAGNETIC RECORDING FILM MEDIUM AND METHOD OF MANUFACTURING THE SAME - The perpendicular magnetic recording medium of the present invention includes a substrate, a non-magnetic layer, a ferromagnetic layer and an antiferromagnetic oxide. The non-magnetic layer is formed on the substrate and the ferromagnetic layer is formed on the non-magnetic layer. The antiferromagnetic oxide is formed in the ferromagnetic layer after the perpendicular magnetic recording medium is annealed by an annealing process. An exchange coupling interaction between the antiferromagnetic oxide and the ferromagnetic materials is introduced. | 04-09-2009 |
20090162702 | PERPENDICULAR MAGNETIC RECORDING MEDIUM AND METHOD FOR FABRICATING THE SAME - A magnetic recording medium is provided in the present invention. The magnetic recording medium including a substrate; a base layer disposed on the substrate; an intermediate layer disposed on the base layer; and a recording layer disposed on the intermediate layer and including a magnetic matrix and a plurality of non-magnetic particles percolated in the magnetic matrix. | 06-25-2009 |
20090176048 | AgSb recording thin film for the inorganic write-once optical disc and the manufacturing method - A recording material of Ag1-xSbx (x=10.8˜25.5 at. %) films for WORM optical disk recording media is invented. The thermal analysis shows that the phase change temperature of AgSb film is between 250 and 270□. The optical property analysis shows that all the as deposited films have good optical absorption and high reflectivity. The X-ray Diffraction analysis shows that the as deposited film and the annealed film are kept at ∈′-AgSb crystalline phase. The TEM analysis shows that the grain size of the Ag80.9Sb19.1 film will grow after annealing. The dynamic test shows that the carrier-to-noise ratio (CNR) of the Ag80.9Sb19.1 optical disc is about 45 dB with λ=657 nm, NA=0.65 and a linear velocity of 3.5 m/s. These Ag | 07-09-2009 |
20110070373 | METHOD FOR FORMING AN ORDERED ALLOY - A method for forming an ordered alloy includes: (a) forming a layer of a first metal with a layer thickness of less than 0.3 nm over a substrate; (b) forming a layer of a second metal with a layer thickness of less than 0.3 nm on the layer of the first metal under an elevated temperature sufficient to cause interdiffusion of atoms of the first and second metals between the layer of the first metal and the layer of the second metal so as to form the ordered alloy; and (c) repeating steps (a) and (b) until a predetermined layer thickness of the ordered alloy is achieved. | 03-24-2011 |
20110104517 | SINGLE-LAYERED FERROMAGNETIC RECORDING FILM WITH PERPENDICULAR MAGNETIC ANISOTROPY - The present invention discloses a single-layered recording film with perpendicular magnetic anisotropy. The single-layered recording film includes a substrate and a ferromagnetic layer. The ferromagnetic layer is formed on the substrate and annealed by a rapid thermal annealing process. After annealing, the average grain size of the single-layered recording film is close to the film thickness of ferromagnetic layer, which is beneficial to achieve a single-layered recording film with perpendicular magnetic anisotropy. | 05-05-2011 |
20110171494 | DISCONTINUOUS ISLANDED FERROMAGNETIC RECORDING FILM WITH PERPENDICULAR MAGNETIC ANISOTROPY - The present invention discloses a discontinuous islanded ferromagnetic recording film with perpendicular magnetic anisotropy. The discontinuous islanded ferromagnetic recording film includes a substrate and a ferromagnetic layer. The ferromagnetic layer is formed on the substrate and annealed by a high-temperature vacuum annealing process. After annealing, a surface energy difference existed between the ferromagnetic layer and the substrate turns the ferromagnetic layer into well-separated and discontinuous islanded ferromagnetic particles. Each islanded ferromagnetic particle is thought of a single magnetic domain, which is beneficial to achieve a discontinuous islanded ferromagnetic recording film with perpendicular magnetic anisotropy. | 07-14-2011 |
20120237392 | MAGNETIC MATERIAL - A magnetic material includes a main alloy having a rhombohedral crystal structure and a composition represented by Co | 09-20-2012 |
Patent application number | Description | Published |
20150042404 | HIGH SLEW RATE OPERATIONAL AMPLIFIER AND OPERATING METHOD THEREOF - A high slew rate operational amplifier including an input terminal, an output terminal, and at least one slew-rate enhancing circuit is disclosed. Each slew-rate enhancing circuit includes a first stage enhancing unit and a second stage enhancing unit. The first stage enhancing unit is coupled between the input terminal and the output terminal. The first stage enhancing unit and the second stage enhancing unit are coupled. The slew-rate enhancing circuit has a threshold voltage and the threshold voltage is related to the size of the first stage enhancing unit. When the threshold voltage is driven, the slew-rate enhancing circuit will rapidly start the second stage enhancing unit to perform a slew rate compensation on the high slew rate operational amplifier. | 02-12-2015 |
20150130776 | ANALOG DATA TRANSMITTER APPLIED IN LCD APPARATUS AND OPERATING METHOD THEREOF - An analog data transmitter applied in a LCD apparatus includes an output pad, a channel operational amplifier, an initial switch, an auxiliary switch module, and a detection unit. The detection unit selectively starts a first switch unit or a second switch unit of the auxiliary switch module according to a pulse width modulation corresponding to a data conversion amplitude of an output data signal outputted from the output pad. During a period of the first switch unit or the second switch unit operating from a first time T0 a second time, transistors in an output stage of the channel operational amplifier operate in a linear region of smaller resistance instead of a saturation region of larger resistance, and the initial switch is turned-off during the period and not started until the second time. The length of the period corresponds to the pulse width modulation. | 05-14-2015 |
20150253618 | PACKAGE STRUCTURE OF DRIVING APPARATUS OF DISPLAY - The invention discloses a package structure of a driving apparatus of a display. The driving apparatus of the display includes a plurality of driving units. The package structure includes a substrate and a plurality of package units. The substrate is used to carry the plurality of driving units. The plurality of driving units is apart to each other. The plurality of package units is used to package the plurality of driving units respectively to form a plurality of driving unit package body apart to each other. A total output channel number of the driving apparatus of the display equals to a total channel number of the plurality of driving units. This package structure can avoid heat concentration on the driving apparatus of the display to achieve good cooling effect and output effectiveness of the driving apparatus of the display will be not reduced accordingly. | 09-10-2015 |
Patent application number | Description | Published |
20130309317 | FOOD SUPPLEMENT INCREASE CD34 STEM CELLS AND TELOMERASE ACTIVITY - The present invention provides a food supplement, which comprises: a placental extract and an oil; which would promote the proliferation of CD34 | 11-21-2013 |
20150231052 | MESENCHYMAL STEM CELL EXTRACT AND ITS USE - A mesenchymal stem cell extract and its use are provided, wherein the mesenchymal stem cell extract comprises a trophic factor(s), such as bone morphogenetic protein-7 (BMP-7), stromal cell-derived factor-1 (SDF-1), vascular endothelial growth factor (VEGF), C-X-C chemokine receptor type-4 (CXCR4), brain-derived neurotrophic factor (BDNF), and/or interleukin-17 (IL-17), and wherein the extract is especially suitable for repairing skin aging. | 08-20-2015 |
20150238534 | NOVEL HOLLOW PARTICLES - A hollow particle is provided. The hollow particle of the invention comprises (a) a hollow microparticle, (b) a plural of linking molecules binding the surface of the microparticle, (c) a polypeptide binding the linking molecule, and (d) a target molecule binding the linking molecule. The hollow microparticle of the invention can deliver more cells and provides a higher rate of cell transplantation by the hollow structures, polypeptides and target molecules. The present invention also provides a manufacture of the hollow microparticle and a cell carrier. | 08-27-2015 |
20150274923 | NOVEL METHOD FOR MANUFACTURING NOVEL HOLLOW PARTICLES - A method for manufacturing a hollow particle is provided. The method comprises the steps of (a) providing a hollow particulate; (b) soaking the hollow particulate in an amine solution to form amine groups on the surface of the hollow particulate; (c) adding a polypeptide, and the polypeptide is linked to the amine groups on the surface of the hollow particulate; and (d) adding a target molecule, and the target molecule is bound to the amine group which are still not bound. | 10-01-2015 |