Ploss
Alexander Ploss, New York, NY US
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20110271356 | HCV ENTRY FACTOR, OCCLUDIN - The human Occludin protein is identified as an essential Hepatitis C Virus (HCV) cell entry factor. Occludin is shown to render murine and other non-human cells infectable with HCV and to be required for HCV—susceptibility of human cells. Associated methods for inhibiting HCV infection, transgenic animal models for HCV pathogenesis, methods of identifying compounds or agents that prevent or mitigate interaction of HCV with Occludin, and HCV inhibitory agents are also disclosed. Kits and cell culture compositions useful for identifying compounds or agents that prevent or mitigate interaction of HCV with Occludin are also provided. | 11-03-2011 |
20110318730 | MICROPATTERNED CO-CULTURE SYSTEMS AS INFECTIOUS DISEASE ANALYSIS PLATFORMS - Cell cultures are provided that include a population of micropatterened hepatocytes and one or more non-parenchymal cell populations, where the hepatocytes are infected with a virus or parasite and include a reporter of virus or parasite infection. Methods of making and using the cell cultures are also provided. | 12-29-2011 |
Dianna Ploss, Cambridge, MA US
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20160068381 | Water Dispenser Cover - A water spout sanitary cover is provided. The cover is disposable and is configured to fit over a portion of the water spout to provide a sanitary layer. The cover may prevent microbial transfer between the spout, water, and a vessel being filled with water. The cover is disposable, and replaceable, and may be provided in a stacked dispenser. | 03-10-2016 |
Hans-Joachim Ploss, Kriftel DE
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20080230700 | METHOD AND DEVICE FOR THE QUANTITATIVE ANALYSIS OF SOLUTIONS AND DISPERSIONS BY MEANS OF NEAR INFRARED SPECTROSCOPY - The present invention relates to a method for quantifying the composition of a product, including: irradiating the product with a radiation source in the near infrared range; receiving radiation which is reflected by or transmitted through the product; providing an output signal corresponding to the intensity of the radiation received at a number of different wavelengths; and determining whether or not the product lies within predetermined integrity criteria on the basis of the output signal using a mathematical method. The moving product contains a solution or homogeneous dispersion and the content of at least one substance contained in the dispersion or solution is quantitatively determined on the basis of the output signal. The invention also relates to a device for carrying out this method. | 09-25-2008 |
Peter D. Ploss, Grayslake, IL US
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20130004863 | FUEL CELL ADAPTER - A fuel cell adapter to be received in a combustion tool fuel cell cavity, the cavity having a predetermined diameter, and the adapter having a post extending longitudinally along an axis. First and second platforms are positioned at a first and second end of the post and they extend laterally outwardly from the post to occupy a distance slightly less than the predetermined diameter of the fuel cell cavity. A flange extends from the post between the first and second ends of the post and has at least one portion extending laterally outwardly from the post to occupy a distance, when combined with the post, slightly greater than the predetermined diameter of the fuel cell cavity. The flange is formed of a resilient material and a thickness so as to permit the flange to be deformed as the adapter is inserted into the fuel cell cavity. | 01-03-2013 |
Reinhard Ploss, Muenchen DE
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20100264523 | Panel, Semiconductor Device and Method for the Production Thereof - A panel has a baseplate with an upper first metallic layer and a multiplicity of a vertical semiconductor components. The vertical semiconductor components in each case have a first side with a first load electrode and a control electrode and an opposite second side with a second load electrode. The second side of the semiconductor components is in each case mounted on the metallic layer of the baseplate. The semiconductor components are arranged in such a way that edge sides of adjacent semiconductor components are separated from one another. A second metallic layer is arranged in separating regions between the semiconductor components. | 10-21-2010 |
Reinhard Ploss, Unterhaching DE
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20130307127 | Semiconductor Device Including A Silicate Glass Structure and Method of Manufacturing A Semiconductor Device - A semiconductor device includes a semiconductor body including a first surface. The semiconductor device further includes a continuous silicate glass structure over the first surface. A first part of the continuous glass structure over an active area of the semiconductor body includes a first composition of dopants that differs from a second composition of dopants in a second part of the continuous glass structure over an area of the semiconductor body outside of the active area. | 11-21-2013 |
20140042593 | SEMICONDUCTOR DEVICE INCLUDING A TRENCH IN A SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor substrate. A first trench extends into or through the semiconductor substrate from a first side. A semiconductor layer adjoins the semiconductor substrate at the first side. The semiconductor layer caps the first trench at the first side. The semiconductor device further includes a contact at a second side of the semiconductor substrate opposite to the first side. | 02-13-2014 |
20140291816 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH A CONTINUOUS SILICATE GLASS STRUCTURE - A method of manufacturing a semiconductor device includes forming a continuous silicate glass structure over a first surface of a semiconductor body, including a first part of the continuous glass structure over an active area of the semiconductor body and a second part of the continuous glass structure over an area of the semiconductor body outside of the active area. A first composition of dopants included in the first part of continuous glass structure differs from a second composition of dopants of the second part of the continuous glass structure. | 10-02-2014 |
20150050754 | METHOD FOR POSTDOPING A SEMICONDUCTOR WAFER - A method for treating a semiconductor wafer having a basic doping is disclosed. The method includes determining a doping concentration of the basic doping, and adapting the basic doping of the semiconductor wafer by postdoping. The postdoping includes at least one of the following methods: a proton implantation and a subsequent thermal process for producing hydrogen induced donors, and a neutron irradiation. In this case, at least one of the following parameters is dependent on the determined doping concentration of the basic doping: an implantation dose of the proton implantation, a temperature of the thermal process, and an irradiation dose of the neutron irradiation. | 02-19-2015 |
20150348776 | Method of Manufacturing a Semiconductor Device with a Continuous Silicate Glass Structure - A method of manufacturing a semiconductor device includes forming a continuous silicate glass structure over a first surface of a semiconductor body, including a first part of the continuous glass structure over an active area of the semiconductor body and a second part of the continuous glass structure over an area of the semiconductor body outside of the active area. A first composition of dopants included in the first part of continuous glass structure differs from a second composition of dopants of the second part of the continuous glass structure. | 12-03-2015 |
20160035842 | Semiconductor Device Including a Trench at Least Partially Filled with a Conductive Material in a Semiconductor Substrate and Method of Manufacturing a Semiconductor Device - A semiconductor device includes a semiconductor substrate and a first trench extending into or through the semiconductor substrate from a first side. The first trench is at least partially filled with a conductive material and electrically connected to the semiconductor substrate via a doped semiconductor layer at a sidewall of the first trench. A semiconductor layer adjoins the semiconductor substrate at the first side, and caps the first trench at the first side. A contact is disposed at a second side of the semiconductor substrate opposite to the first side. A method of manufacturing the semiconductor device is also provided. | 02-04-2016 |
20160099186 | METHOD FOR POSTDOPING A SEMICONDUCTOR WAFER - A method for treating a semiconductor wafer having a basic doping is disclosed. The method includes determining a doping concentration of the basic doping, and adapting the basic doping of the semiconductor wafer by postdoping. The postdoping includes at least one of the following methods: a proton implantation and a subsequent thermal process for producing hydrogen induced donors. In this case, at least one of the following parameters is dependent on the determined doping concentration of the basic doping: an implantation dose of the proton implantation, and a temperature of the thermal process. | 04-07-2016 |
20160104622 | Method for Manufacturing a Semiconductor Wafer, and Semiconductor Device Having a Low Concentration of Interstitial Oxygen - A method for manufacturing a substrate wafer | 04-14-2016 |
Tina Ploss, Buttelborn DE
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20100248306 | Expression System for the Antibiotic-Free Production of Polypeptides - The invention relates to an expression system for the production of one or more target polypeptide/target polypeptides, comprising a host cell in whose genome the DNA sequence that codes glycerine-3-phosphate dehydrogenase is inactivated or partially or completely deleted and which is transformed by an extrachromosomal element that comprises a DNA sequence that codes the target polypeptide(s) and glycerine-3-phosphate dehydrogenase, whereby not only the host cell genome but also the extrachromosomal element do not carry an antibiotic-resistance gene, as well as a DNA sequence that codes for a polypeptide with glycerine-3-phosphate dehydrogenase activity characterized in that the DNA sequence is selected from a) DNA sequences that comprise a nucleotide sequence according to SEQ ID NO: 1, b) DNA sequences that comprise a nucleotide sequence represented by the nucleotides 1338 to 2375 of SEQ ID NO: 1, c) DNA sequences that are coded by the plasmid pTP01 with the plasmid map according to FIG. | 09-30-2010 |
Wolfgang Ploss, Mauern DE
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20110049517 | BIPOLAR TRANSISTOR - A bipolar transistor has a collector having a base layer provided thereon and a shallow trench isolation structure formed therein. A base poly layer is provided on the shallow trench isolation structure. The shallow trench isolation structure defines a step such that a surface of the collector projects from the shallow trench isolation structure adjacent the collector. | 03-03-2011 |
20110204482 | Method and Electronic Device for a Simplified Integration of High Precision Thinfilm Resistors - The invention relates to a method of manufacturing an integrated circuit. An electrically resistive layer of a material for serving as a thin film resistor (TFR) is deposited. A first electrically insulating layer is deposited on the electrically resistive layer of the TFR. An electrically conductive layer of an electrically conductive material is deposited. An area is left without the conductive layer and the area overlaps the electrically resistive layer of the TFR. A second electrically insulating layer is deposited on top of the conductive layer. A first VIA opening is etched through the second insulating layer, the area without the conductive layer adjacent to the electrically conductive layer and through the first insulating layer down to the electrically resistive layer of the TFR. A conductive material is deposited in the first VIA opening so as to electrically connect the conductive layer and the electrically resistive layer of the TFR. | 08-25-2011 |
20130249056 | METHOD AND ELECTRONIC DEVICE FOR A SIMPLIFIED INTEGRATION OF HIGH PRECISION THINFILM RESISTORS - The invention relates to a method of manufacturing an integrated circuit. An electrically resistive layer of a material for serving as a thin film resistor (TFR) is deposited. A first electrically insulating layer is deposited on the electrically resistive layer of the TFR. An electrically conductive layer of an electrically conductive material is deposited. An area is left without the conductive layer and the area overlaps the electrically resistive layer of the TFR. A second electrically insulating layer is deposited on top of the conductive layer. A first VIA opening is etched through the second insulating layer, the area without the conductive layer adjacent to the electrically conductive layer and through the first insulating layer down to the electrically resistive layer of the TFR. A conductive material is deposited in the first VIA opening so as to electrically connect the conductive layer and the electrically resistive layer of the TFR. | 09-26-2013 |