Patent application number | Description | Published |
20080268560 | Method for Producing a Thin-Film Semiconductor Chip - Manufacturing methods for a thin-film semiconductor chip based on a III/V-III/V semiconductor compound material and capable of generating electromagnetic radiation. In one method, a succession of active layers is applied to a growth substrate. Applied to the reverse side of the active layers is a dielectric layer. Laser energy is introduced into a defined volumetric section of the dielectric layer to form an opening. Subsequently, a metallic layer is applied to form a succession of reflective layers, to fill the opening with metallic material and to create a reverse-side electrically conductive contact point to the reverse side of the succession of active layers. Pursuant to another method, a succession of reflective layers is applied to the active layers and laser energy is applied to a volumetric section of the reflective layers, to create a reverse-side electrically conductive contact point. | 10-30-2008 |
20100112789 | Method for Producing Semiconductor Chips using Thin Film Technology - For semiconductor chips using thin film technology, an active layer sequence is applied to a growth substrate, on which a reflective electrically conductive contact material layer is then formed. The active layer sequence is patterned to form active layer stacks, and reflective electrically conductive contact material layer is patterned to be located on each active layer stack. Then, a flexible, electrically conductive foil is applied to the contact material layers as an auxiliary carrier layer, and the growth substrate is removed. | 05-06-2010 |
20100117111 | Optoelectronic Component and Method for the Manufacture of a Plurality of Optoelectronic Components - An optoelectronic component with a semiconductor body includes an active region suitable for generating radiation, and two electrical contacts arranged on the semiconductor body. The contacts are electrically connected to the active region. The contacts each have a connecting face that faces away from the semiconductor body. The contact faces are located on a connection side of the component and a side of the component that is different from the connection side is mirror-coated. A method for the manufacture of multiple components of this sort is also disclosed. | 05-13-2010 |
20100264434 | Optoelectronic Semiconductor Chip - An optoelectronic semiconductor chip is disclosed which emits electromagnetic radiation from its front side ( | 10-21-2010 |
20110053308 | Method for the Production of an Optoelectronic Component using Thin-Film Technology - On an epitaxy substrate ( | 03-03-2011 |
20110210357 | Optoelectronic Component and Method for the Production Thereof - A method of producing an optoelectronic component, comprising the method steps: A) providing a growth substrate ( | 09-01-2011 |
20120070925 | Method for Producing a Thin-Film Semiconductor Chip - Manufacturing methods for a thin-film semiconductor chip based on a III/V-III/V semiconductor compound material and capable of generating electromagnetic radiation. In one method, a succession of active layers is applied to a growth substrate. Applied to the reverse side of the active layers is a dielectric layer. Laser energy is introduced into a defined volumetric section of the dielectric layer to form an opening. Subsequently, a metallic layer is applied to form a succession of reflective layers, to fill the opening with metallic material and to create a reverse-side electrically conductive contact point to the reverse side of the succession of active layers. Pursuant to another method, a succession of reflective layers is applied to the active layers and laser energy is applied to a volumetric section of the reflective layers, to create a reverse-side electrically conductive contact point. | 03-22-2012 |
20130214322 | Radiation-Emitting Semiconductor Chip and Method for Producing a Radiation-Emitting Semiconductor Chip - A radiation-emitting semi-conductor chip has a substrate and a semiconductor body arranged on the substrate and with a semiconductor layer sequence that includes an active region provided for producing radiation, an n-type region, and a covering layer arranged on a side of the n-type region that faces away from said active region. There is a contact structure arranged on the covering layer for the external electrical contacting of the n-type region. The covering layer has at least one recess through which the contact structure extends to the n-type region. | 08-22-2013 |
20140080287 | METHOD FOR SINGULATING A COMPONENT COMPOSITE ASSEMBLY - A method relates to separating a component composite into a plurality of component regions, wherein the component composite is provided having a semiconductor layer sequence comprising a region for generating or for receiving electromagnetic radiation. The component composite is mounted on a rigid subcarrier. The component composite is separated into the plurality of component regions, wherein one semiconductor body is produced from the semiconductor layer sequence for each component region. The component regions are removed from the subcarrier. | 03-20-2014 |
20140113390 | Method for Producing Singulated Semiconductor Devices - A method for producing singulated semiconductor components includes providing a starting substrate. An etching process is carried out to form depressions at a side of the starting substrate. The depressions are arranged in the region of the semiconductor components to be produced. Walls present between the depressions are arranged in the region of separating regions provided for severing the starting substrate. The method furthermore comprises forming a metallic layer on the side of the starting substrate with the depressions and walls and carrying out a further etching process for severing the starting substrate in the separating regions and forming the singulated semiconductor components. | 04-24-2014 |