Patent application number | Description | Published |
20090078883 | TECHNIQUES FOR OPTICAL ION BEAM METROLOGY - Techniques for providing optical ion beam metrology are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for controlling beam density profile, the apparatus may include one or more camera systems to capture at least one image of an ion beam and a control system coupled to the one or more camera systems to control a beam density profile of the ion beam. The control system may further include a dose profiler to provide information to one or more ion implantation components in at least one of a feedback loop and a feedforward loop to improve dose and angle uniformity. | 03-26-2009 |
20090309041 | TECHNIQUES FOR PROVIDING A MULTIMODE ION SOURCE - Techniques for providing a multimode ion source are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation comprising an ion source that operates in multiple modes such that a first mode is an arc-discharge mode and a second mode is an RF mode. | 12-17-2009 |
20100200768 | TECHNIQUES FOR IMPROVING EXTRACTED ION BEAM QUALITY USING HIGH-TRANSPARENCY ELECTRODES - Techniques for improving extracted ion beam quality using high-transparency electrodes are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation. The apparatus may comprise an ion source for generating an ion beam, wherein the ion source comprises a faceplate with an aperture for the ion beam to travel therethrough. The apparatus may also comprise a set of extraction electrodes comprising at least a suppression electrode and a high-transparency ground electrode, wherein the set of extraction electrodes may extract the ion beam from the ion source via the faceplate, and wherein the high-transparency ground electrode may be configured to optimize gas conductance between the suppression electrode and the high-transparency ground electrode for improved extracted ion beam quality. | 08-12-2010 |
Patent application number | Description | Published |
20090314951 | ION SOURCE CLEANING METHOD AND APPARATUS - In a cleaning process for an ion source chamber, an electrode positioned outside of the ion source chamber includes a suppression plug. When the cleaning gas is introduced into the source chamber, the suppression plug may engage an extraction aperture of the source chamber to adjust the gas pressure within the chamber to enhance chamber cleaning via. plasma-enhanced chemical reaction. The gas conductance between the source chamber aperture and the suppression plug can be adjusted during the cleaning process to provide optimum cleaning conditions and to exhaust unwanted deposits. | 12-24-2009 |
20090314962 | METHOD AND APPARATUS FOR CONTROLLING BEAM CURRENT UNIFORMITY IN AN ION IMPLANTER - An electrode assembly for use with an ion source chamber or as part of an ion implanter processing system to provide a uniform ion beam profile. The electrode assembly includes an electrode having an extraction slot with length L aligned with an aperture of the ion source chamber for extracting an ion beam. The electrode includes a plurality of segments partitioned within the length of the extraction slot where each of the segments is configured to be displaced in at least one direction with respect to the ion beam. A plurality of actuators are connected to the plurality of electrode segments for displacing one or more of the segments. By displacing at least one of the plurality of electrode segments, the current density of a portion of the ion beam corresponding to the position of the segment within the extraction slot is modified to provide a uniform current density beam profile associated with the extracted ion beam. | 12-24-2009 |
20100084582 | METHOD AND APPARATUS FOR CONTROLLING BEAM CURRENT UNIFORMITY IN AN ION IMPLANTER - An ion implantation system for neutralizing the space charge effect associated with a high current low energy ion beam. The implantation system includes an ion source configured to receive a dopant gas and generate ions having a particular energy and mass from which ions are extracted through an aperture. A work piece positioned downstream of the ion source for receiving the extracted ions in the form of an ion beam. A bleed gas channel disposed between the ion source and the work piece. The bleed gas channel supplying a gas used to neutralize the space charge effect associated with the ion beam. | 04-08-2010 |
20100155619 | DIRECTIONAL GAS INJECTION FOR AN ION SOURCE CATHODE ASSEMBLY - In an ion implanter, an inert gas is directed at a cathode assembly near an ion source chamber via a supply tube. The inert gas is provided with a localized directional flow toward the cathode assembly to reduce unwanted concentrations of cleaning or dopant gases introduced into the ion source chamber, thereby reducing the effects of unwanted filament growth in the cathode assembly and extending the manufacturing life of the ion source. | 06-24-2010 |
20100327159 | Ion Source Cleaning End Point Detection - In an ion implanter, a Faraday cup is utilized to receive an ion beam generated during ion source cleaning. The detected beam has an associated mass spectrum which indicates when the ion source cleaning process is complete. The mass spectrum results in a signal composed of a cleaning agent and the material comprising the ion source. This signal will rise over time as the ion source chamber is being cleaned and will level-off and remain constant once the deposits are etched away from the source chamber, thereby utilizing existing implant tools to determine endpoint detection during ion source cleaning. | 12-30-2010 |