Pitney
Byron Pitney, Carmel, IN US
Patent application number | Description | Published |
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20160055528 | COMMUNICATING INFORMATION ABOUT PRODUCT OR SERVICE - In a method for communicating information about a service or product, a record can be retrieved from a database storing records of communications related to a second entity. The record can include information related to an identity of a first entity. The first entity can be defined, at a processor and based upon content of the record, as a member of a set designated to be sent the information about the product or service. The first entity can have previously engaged in a first communication related to the second entity. The second entity can be associated with the product or service. A second communication, which can include the information related to the identity of the first identity, can be sent from the processor to an advertising platform. A third communication, which can include the information about the product or service, can be sent from the processor to the advertising platform. | 02-25-2016 |
David J. Pitney, Moodus, CT US
Patent application number | Description | Published |
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20130078084 | AIRFOIL AIR SEAL ASSEMBLY - An air seal assembly for a gas turbine engine the air seal comprises a first assembly and a second assembly. One of the first assembly and the second assembly is rotatable relative to the other of the first assembly and the second assembly. The second assembly is aligned annularly with the first assembly and includes a circumferential surface with an abradable coating disposed annularly adjacent to the first and second airfoil tips. The first assembly includes at least one first airfoil with a first tip having an abrasive coating, and at least one second airfoil with a second tip absent the abrasive coating, the at least one first airfoil co-aligned axially and intermingled with a respective at least one second airfoil around a periphery of the first assembly. | 03-28-2013 |
John A. Pitney, O'Fallon, MO US
Patent application number | Description | Published |
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20090165721 | Susceptor with Support Bosses - A susceptor for supporting a semiconductor wafer during a chemical vapor deposition process includes a body having opposing upper and lower surfaces. Support bosses extend downward from the lower face of the body. Each support boss has a boss opening sized and shaped for receiving a support post of a chemical vapor deposition device to mount the susceptor on the support post. | 07-02-2009 |
20140182788 | Apparatus for Stressing Semiconductor Substrates - Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant. | 07-03-2014 |
20140187022 | Processes and Apparatus for Preparing Heterostructures with Reduced Strain by Radial Distension - Apparatus and processes for preparing heterostructures with reduced strain are disclosed. The heterostructures may include a semiconductor structure that conforms to a surface layer having a different crystal lattice constant than the structure to form a relatively low-defect heterostructure. | 07-03-2014 |
20140187023 | Processes and Apparatus for Preparing Heterostructures with Reduced Strain by Radial Compression - Apparatus and processes for preparing heterostructures with reduced strain are disclosed. The heterostructures may include a semiconductor structure that conforms to a surface layer having a different crystal lattice constant than the structure to form a relatively low-defect heterostructure. | 07-03-2014 |
John Allen Pitney, St. Charles, MO US
Patent application number | Description | Published |
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20140273748 | SINGLE SIDE POLISHING USING SHAPE MATCHING - A method of polishing a wafer is disclosed that includes determining a removal profile. The wafer is measured to determine a starting wafer profile and then the wafer is polished. The wafer is again measured after being polished to determine a polished wafer profile. The starting wafer profile and the polished wafer profile are compared to each other to determine the removal profile by computing the amount and shape of material removed from the first wafer during polishing. | 09-18-2014 |
John Allen Pitney, St. Peters, MO US
Patent application number | Description | Published |
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20130263776 | Methods For Fabricating A Semiconductor Wafer Processing Device - A method of fabricating a semiconductor processing device includes providing a susceptor including a substantially cylindrical body portion having opposing upper and lower surfaces. The body portion has a diameter larger than a wafer diameter. The method also includes providing a set of holes circumferentially disposed at a first susceptor diameter, the set of holes being evenly spaced with respect to adjacent holes and extending through the upper and lower surfaces in an area. The first susceptor diameter is larger than the wafer diameter, and holes are omitted along the first diameter in a set of predetermined orientations. | 10-10-2013 |
20130263779 | Susceptor For Improved Epitaxial Wafer Flatness - A susceptor for supporting a semiconductor wafer during an epitaxial chemical vapor deposition process, the susceptor defining a wafer diameter, the susceptor includes a substantially cylindrical body portion having opposing upper and lower surfaces. The body portion has a diameter larger than the wafer diameter. The susceptor includes a set of holes circumferentially disposed at a first susceptor diameter, the set of holes is evenly spaced with respect to adjacent holes and extending through the upper and lower surfaces in an area. The first susceptor diameter is larger than the wafer diameter, and holes are omitted along the first diameter in a predetermined orientation. | 10-10-2013 |
20130276695 | SUSCEPTOR ASSEMBLIES FOR SUPPORTING WAFERS IN A REACTOR APPARATUS - Apparatus and methods for wafer processes such as etching and chemical vapor deposition processes are disclosed. In some embodiments, the apparatus includes a susceptor and a ring disposed beneath the susceptor to influence a thickness of the deposited epitaxial layer. | 10-24-2013 |
20140273409 | GAS DISTRIBUTION PLATE FOR CHEMICAL VAPOR DEPOSITION SYSTEMS AND METHODS OF USING SAME - In one aspect, a system for depositing a layer on a substrate is provided. The system includes a processing chamber, a gas injecting port, a gas distribution plate, and a plug. The gas injecting port is disposed upstream from the processing chamber. The gas distribution plate is disposed between the gas injecting port and the processing chamber, and includes an elongate planar body and an array of holes therein. The plug is sized to be received within one of the holes, and includes an orifice therethrough for permitting the passage of gas. The plug is capable of being removably secured to the gas distribution plate within one of the holes. | 09-18-2014 |
20140273410 | INJECT INSERT LINER ASSEMBLIES FOR CHEMICAL VAPOR DEPOSITION SYSTEMS AND METHODS OF USING SAME - A system for depositing a layer on a substrate includes a processing chamber, a gas injecting port for introducing gas into the system, a gas distribution plate disposed between the gas injecting port and the processing chamber, the gas distribution plate including holes therein, and an inject insert liner assembly received within the system adjacent to the gas distribution plate and upstream from the processing chamber. The inject insert liner assembly defines gas flow channels therein extending along a lengthwise direction of the system, wherein each channel includes an inlet and an outlet, and at least one channel is tapered along the lengthwise direction of the system in at least one of a vertical or horizontal direction. The inject insert liner assembly has the same number of gas flow channels as the number of holes in the gas distribution plate. | 09-18-2014 |
20140273411 | METHODS OF USING INJECT INSERT LINER ASSEMBLIES IN CHEMICAL VAPOR DEPOSITION SYSTEMS - A method of depositing an epitaxial layer on a silicon wafer is described. The silicon wafer has a diameter, and is disposed within a processing chamber within a deposition system. The deposition includes a gas distribution plate in fluid communication with a gas injecting port and the processing chamber. The method includes the steps of introducing a process gas into the system from the gas injecting port, flowing the process gas through a flow channel extending along a lengthwise direction of the system and being tapered along the lengthwise direction of the system in at least one of a vertical or horizontal direction, wherein the flow channel is defined by an inject insert liner assembly adjacent to the gas distribution plate, and depositing an epitaxial layer on the wafer at a deposition rate of at least about 2.3 micrometers per minute. | 09-18-2014 |
20140273503 | METHODS OF GAS DISTRIBUTION IN A CHEMICAL VAPOR DEPOSITION SYSTEM - A method of depositing an epitaxial layer on a silicon wafer is described. The silicon wafer has a diameter, and is disposed within a processing chamber within a deposition system. The method includes the steps of introducing a process gas into the system from a gas injecting port, flowing the process gas through a gas distribution plate in fluid communication with the gas injecting port and the processing chamber, the gas distribution plate including an inner array of holes and an outer array of holes, and controlling the gas flow distribution across the substrate surface. The controlling step includes selecting at least one orifice-containing plug to be secured within a hole in the gas distribution plate, and securing the selected plug within the hole. | 09-18-2014 |
Paul Pitney, Wildwood, MO US
Patent application number | Description | Published |
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20130327430 | Vapor recovery line flow meter - An improvement in a vapor recovery line in the form of a vortex shedding flow meter installable within such vapor recovery line to monitor the flow rate of vapor being returned through the vapor recovery line, such flow meter including a housing having an inlet flange with an associated inlet connectable to the upstream portion of the vapor recovery line, an outlet flange with an outlet connectable to the downstream portion of the vapor recovery line, a housing for a passageway extending between the inlet and outlet, with a vortex strut extending into the passageway nearer the outlet to generate shed flow vortices and a transmitter-receiver transducer pair positioned nearer the outlet to subject the shed vortices to a sonic beam to effect modulation thereof, and an electronics package within an electronic housing portion for determining from such modulation the flow rate of the vapor passing through the vapor recovery line. | 12-12-2013 |
Paul T. Pitney, Wildwood, MO US
Patent application number | Description | Published |
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20130327439 | Pressure-locking nozzle for dispensing gaseous fluid - A high pressure dispensing nozzle for providing fuel from a reserve to a connector of an outlet receptacle, having a generally tubular nozzle construction, with an outer sleeve, an internal passageway constructed within the sleeve, a plurality of jaw members provided near the distal end of the tubular construction and provided for engagement to lock the connector to establish a fuel passageway through the nozzle for delivery of fuel therethrough and to the receiving tank. The nozzle includes a slidable piston that operates the various components for locking the jaws in position and aligning the fuel passageway with the fuel tank. | 12-12-2013 |