| Patent application number | Description | Published |
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| 20080204945 | MAGNETORESISTANCE SENSORS PINNED BY AN ETCH INDUCED MAGNETIC ANISOTROPY - Magnetoresistance sensors with magnetic pinned layers that are pinned by anisotropic etch induced magnetic anisotropies and methods for fabricating the magnetoresistance sensors are provided. The method comprises forming a seed layer structure. The seed layer is etched to form an anisotropic etch along a top surface of the seed layer. A magnetic pinned layer is formed on the top surface of the seed layer structure. The anisotropic etch on the top surface of the seed layer structure induces a magnetic anisotropy in the magnetic pinned layer, which pins the magnetization of the magnetic pinned layer structure. | 08-28-2008 |
| 20090103215 | MAGNETORESISTIVE (MR) ELEMENTS HAVING IMPROVED HARD BIAS SEED LAYERS - MR devices and associated methods of fabrication are disclosed. An MR device includes an MR element and a bias structure on either side of the MR element for biasing a free layer of the MR element. The bias structure includes an amorphous buffer layer, a first seed layer formed from Cr, a second seed layer formed from a non-magnetic Cr alloy, and a hard bias magnetic layer. The second seed layer formed from the non-magnetic Cr alloy is formed between the Cr seed layer and the hard bias magnetic layer. An example of a non-magnetic Cr alloy is Chromium-Molybdenum (CrMo). | 04-23-2009 |
| 20100195253 | MAGNETORESISTIVE (MR) ELEMENTS HAVING IMPROVED HARD BIAS SEED LAYERS - MR devices and associated methods of fabrication are disclosed. An MR device includes an MR element and a bias structure on either side of the MR element for biasing a free layer of the MR element. The bias structure includes an amorphous buffer layer, a first seed layer formed from Cr, a second seed layer formed from a non-magnetic Cr alloy, and a hard bias magnetic layer. The second seed layer formed from the non-magnetic Cr alloy is formed between the Cr seed layer and the hard bias magnetic layer. An example of a non-magnetic Cr alloy is Chromium-Molybdenum (CrMo). | 08-05-2010 |
| 20110122534 | MAGNETORESISTANCE SENSORS PINNED BY AN ETCH INDUCED MAGNETIC ANISOTROPY - Magnetoresistance sensors with magnetic pinned layers that are pinned by anisotropic etch induced magnetic anisotropies and methods for fabricating the magnetoresistance sensors are provided. The method comprises forming a seed layer structure. The seed layer is etched to form an anisotropic etch along a top surface of the seed layer. A magnetic pinned layer is formed on the top surface of the seed layer structure. The anisotropic etch on the top surface of the seed layer structure induces a magnetic anisotropy in the magnetic pinned layer, which pins the magnetization of the magnetic pinned layer structure. | 05-26-2011 |
| Patent application number | Description | Published |
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| 20080210544 | METHOD FOR MANUFACTURING A MAGNETIC TUNNEL JUNCTION SENSOR USING ION BEAM DEPOSITION - A method for forming a MgO | 09-04-2008 |
| 20090007416 | METHOD TO CONTROL MASK PROFILE FOR READ SENSOR DEFINITION - A method for constructing a magnetoresistive sensor that avoids shadowing effects of a mask structure during sensor definition. The method includes the use of an antireflective coating (ARC) and a photosensitive mask deposited there over. The photosensitive mask is formed to cover a desired sensor area, leaving non-sensor areas exposed. A reactive ion etch is performed to transfer the pattern of the photosensitive mask onto the underlying ARC layer. The reactive ion etch (RIE) is performed with a relatively high amount of platen power. The higher platen power increases ion bombardment of the wafer, thereby increasing the physical (ie mechanical) component of material removal relative to the chemical component. This increase in the physical component of material removal result in an increased rate of removal of the photosensitive mask material relative to the ion mill resistant mask. This avoids the formation of a bulbous or mushroom shaped photoresist mask and therefore, avoids shadowing effects during subsequent manufacturing processes. | 01-08-2009 |
| 20090021870 | Magnetic head having CPP sensor with improved stabilization of the magnetization of the pinned magnetic layer - A magnetic head having a CPP read head sensor that includes a layered sensor stack including an antiferromagnetic (AFM) layer, a pinned magnetic layer, and a free magnetic layer. The pinned magnetic layer is comprised of a high, positive magnetostriction material and has a thickness t and a height (H), such that the ratio (t/H) of the thickness t to the height H of the pinned magnetic layer is fabricated to be within the range of from approximately 1/10 to approximately 1/500. Ion milling is conducted at a grazing angle to the surface of the layer upon which the pinned magnetic layer is fabricated, where the ion beam is oriented in the direction of the desired magnetization of the pinned magnetic layer. | 01-22-2009 |
| 20090034126 | Magnetic head having CPP sensor with improved biasing for free magnetic layer - A magnetic head for a hard disk drive having a CPP read head sensor that includes a layered sensor stack including a free magnetic layer and hard bias elements that are disposed on the sides of the free magnetic layer to provide a biasing magnetization for the free magnetic layer. To increase the coercivity of the hard bias elements, and thereby improve the biasing of the magnetization of the free magnetic layer, the ratio (t/H) of the thickness t to the height H of the hard bias elements is fabricated to be within the range of from approximately 1 to approximately 1/15. | 02-05-2009 |
| 20090080122 | CURRENT PERPENDICULAR TO PLANE GMR AND TMR SENSORS WITH IMPROVED MAGNETIC PROPERTIES USING Ru/Si SEED LAYERS - A magnetoresisive sensor having a thin seed layer that provides an exceptionally smooth interface between layers of the sensor stack. The exceptionally smooth interface provided by the seed layer reduces interlayer exchange coupling allowing the non-magnetic spacer layer (or barrier layer) to be very thin. The seed layer includes a thin layer of Ru and a thin layer of Si which intermix to form a homogeneous, amorphous thin seed layer of Ru-silicide. | 03-26-2009 |
| 20090161269 | MAGNETORESISTIVE SENSOR HAVING AN ENHANCED FREE LAYER STABILIZATION MECHANISM - A magnetoresistive sensor having an improved hard bias stabilization structure. The sensor includes a hard bias layer that is formed on a surface that has been treated to form it with an anisotropic texture that induces a magnetic anisotropy oriented parallel with the air bearing surface. This magnetic anisotropy is further aided by a shape induced magnetic anisotropy caused by configuring the hard bias layers to have a width parallel with the air bearing surface that is larger than a stripe height of the hard bias layer measured perpendicular to the air bearing surface. | 06-25-2009 |
