Pilsang
Pilsang Kim, Seoul KR
Patent application number | Description | Published |
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20130040563 | MOBILE TERMINAL AND PAYMENT METHOD THEREOF - A mobile terminal has a memory, short-range communication interface, and a controller. The memory stores payment information and the controller compares predetermined first authentication information with second authentication information. The controller enables or disables a payment function based on a result of the comparison, and establishes a connection with a payment terminal through the short-range communication interface when the payment function is enabled. Once the connection is established, the payment information is transmitted to the payment terminal through the short-range communication interface. | 02-14-2013 |
Pilsang Yun, Sendai-Shi KR
Patent application number | Description | Published |
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20130112972 | THIN-FILM TRANSISTOR - Making it possible to improve adhesion between the semiconductor layer and the electrodes, realize high-speed operation of the thin-film transistor by enhancing ohmic contact between these members, reliably prevent oxidation of the electrode surfaces, and realize an electrode fabrication process with few processing steps. The thin-film transistor | 05-09-2013 |
Pilsang Yun, Sendai-Shi JP
Patent application number | Description | Published |
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20130168671 | SEMICONDUCTOR DEVICE - An ohmic contact between an electrode and a semiconductor layer is more stably formed and an electrical contact resistance between them is further reduced. | 07-04-2013 |
20140070207 | ELECTRODE FOR OXIDE SEMICONDUCTOR, METHOD OF FORMING THE SAME, AND OXIDE SEMICONDUCTOR DEVICE PROVIDED WITH THE ELECTRODE - To make it possible to form a metal electrode of low electrical contact resistance on a conductive indium-containing oxide semiconductor layer constituting a device active layer of a thin-film transistor or the like. Between an indium-containing oxide semiconductor layer and a metal electrode layer provided above this layer for passing device operating current, which can reduce indium oxide or the like of the oxide semiconductor layer. A metallic oxide layer and a metal layer are formed using as material a metal film including an easily oxidable metal, and further an indium-rich layer in which reduced indium is accumulated is formed at a boundary between the metallic oxide layer and the metal layer. | 03-13-2014 |
Pilsang Yun, Chungcheongnam-Do KR
Patent application number | Description | Published |
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20140162126 | CATHODE ACTIVE MATERIAL, METHOD FOR PREPARING THE SAME, AND LITHIUM SECONDARY BATTERIES INCLUDING THE SAME - The present invention relates to a cathode active material for a lithium secondary battery, a method for preparing the same, and a lithium secondary battery including the same, and provides a cathode active material including Li | 06-12-2014 |