Patent application number | Description | Published |
20090039350 | Display panel and method of manufacturing the same - In a display panel and a method of manufacturing the display panel, a gate line, a data line, and source and drain electrodes including a same material as the data line are formed on a substrate constituting the display panel, and the data line includes an aluminum based alloy containing sufficient nickel to inhibit corrosion during dry etching. The corrosion resistance of the AlNi-containing alloy helps prevent corrosion of the data line, the source electrode, and the drain electrode during selective dry etching that shapes these lines and electrodes. | 02-12-2009 |
20090117333 | METHOD OF MANUFACTURING DISPLAY DEVICE AND DISPLAY DEVICE THEREFROM - A method of manufacturing a display device includes: forming an auxiliary layer including at least one of metal and a metal oxide on an insulating substrate; forming a photoresist layer pattern partially exposing the auxiliary layer on the auxiliary layer; forming a trench on the insulating substrate by etching the exposed auxiliary layer and the insulating substrate under the exposed auxiliary layer; forming a seed layer including a first seed layer disposed on the photoresist layer pattern and a second seed layer disposed in the trench; removing the photoresist layer pattern and the first seed layer by lifting off the photoresist layer pattern; removing the auxiliary layer remaining on the insulating substrate after lifting off the photoresist layer pattern; and forming a main wiring layer on the second seed layer by electroless plating. | 05-07-2009 |
20090121228 | ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A gate line includes a first seed layer formed on a base substrate and a first metal layer formed on the first seed layer. A first insulation layer is formed on the base substrate. A second insulation layer is formed on the base substrate. Here, a line trench is formed through the second insulation layer in a direction crossing the gate line. A data line includes a second seed layer formed below the line trench and a second metal layer formed in the line trench. A pixel electrode is formed in a pixel area of the base substrate. Therefore, a trench of a predetermined depth is formed using an insulation layer and a metal layer is formed through a plating method, so that a metal line having a sufficient thickness may be formed. | 05-14-2009 |
20090212290 | DISPLAY PANEL AND METHOD FOR MANUFACTURING THE SAME - A display panel includes; a lower gate line, a lower data line disposed substantially perpendicular to the lower gate line, a thin film transistor (“TFT”) connected to the lower gate line and the lower data line, an insulating layer disposed on the lower gate line, the lower data line, and the TFT and having a plurality of trenches exposing the lower gate line and the lower data line, an upper gate line disposed in the trench on the lower gate line, an upper data line disposed in the trench on the lower data line, and a pixel electrode connected to the TFT. | 08-27-2009 |
20090236627 | METHOD OF FORMING METAL WIRING - Provided is a method of forming metal wiring. The method includes forming a photosensitive film pattern on a substrate, hydrophobicizing at least part of the photosensitive film pattern, coating metal ink on the substrate having the photosensitive film pattern, forming a seed layer, and forming a metal layer. Alternatively, a trench is formed by using the photosensitive film pattern as a mask, and metal aerosol is sprayed to form the seed layer and then the metal layer. In this method, there is no need to form a metal thin film on the photosensitive film pattern when the seed layer is formed. As a result, less metal is wasted, which, in turn, significantly reduces manufacturing costs. | 09-24-2009 |
20100051933 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME - A thin film transistor array substrate having a high charge mobility and that can raise a threshold voltage, and a method of fabricating the thin film transistor array substrate are provided. The thin film transistor array substrate includes: an insulating substrate; a gate electrode formed on the insulating substrate; an oxide semiconductor layer comprising a lower oxide layer formed on the gate electrode and an upper oxide layer formed on the lower oxide layer, such that the oxygen concentration of the upper oxide layer is higher than the oxygen concentration of the lower oxide layer; and a source electrode and a drain electrode formed on the oxide semiconductor layer and separated from each other. | 03-04-2010 |
20100051934 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME - A thin film transistor array panel and a method of manufacturing the same are provided according to one or more embodiments. In an embodiment, a method includes: forming a gate line on an insulation substrate; stacking a gate insulating layer, an oxide semiconductor layer, a first barrier layer, and a first copper layer on the gate line; performing a photolithography process on the oxide semiconductor layer, the first barrier layer, and the first copper layer and forming a data line including a source electrode, a drain electrode, and an oxide semiconductor pattern; forming a passivation layer having the contact hole that exposes the drain electrode on the data line and the drain electrode; and forming a pixel electrode that is connected to the drain electrode through the contact hole on the passivation layer, wherein the forming of a data line, a drain electrode, and an oxide semiconductor pattern includes wet etching the first copper layer and then wet etching the first barrier layer and the oxide semiconductor layer. | 03-04-2010 |
20100123842 | LIQUID CRYSTAL DISPLAY AND DRIVING METHOD THEREOF - Embodiments of the present invention relate to a liquid crystal display and a driving method thereof. According to an embodiment, the liquid crystal display comprises a pixel electrode having a first subpixel electrode, a second subpixel electrode, and a third subpixel electrode electrically separated from each other. The liquid crystal display comprises a first thin film transistor connected to the first subpixel electrode, a second thin film transistor connected to the second subpixel electrode, a third thin film transistor connected to the third subpixel electrode, and a fourth thin film transistor connected to the second subpixel electrode and the third subpixel electrode. The liquid crystal display comprises a first gate line connected to the first to third thin film transistors, a second gate line connected to the fourth thin film transistor, a data line connected to the first and second thin film transistors, and a storage electrode line connected to the third thin film transistor. | 05-20-2010 |
20100148169 | THIN-FILM TRANSISTOR SUBSTRATE AND METHOD OF FABRICATING THE SAME - A thin-film transistor (TFT) substrate has improved electrical properties and reduced appearance defects and a method of fabricating the TFT substrate, are provided. The TFT substrate includes: gate wiring which is formed on a surface of an insulating substrate; oxide active layer patterns which are formed on the gate wiring and include an oxide of a first material; buffer layer patterns which are disposed on the oxide active layer patterns to directly contact the oxide active layer patterns and include a second material; and data wiring which is formed on the buffer layer patterns to insulatedly cross the gate wiring, wherein a Gibbs free energy of the oxide of the first material is lower than a Gibbs free energy of an oxide of the second material. | 06-17-2010 |
20100149476 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate includes; a base substrate, a deformation preventing layer disposed on a lower surface of the base substrate, wherein the deformation preventing layer applies a force to the base substrate to prevent the base substrate from bending, a gate line disposed on an upper surface of the base substrate, a data line disposed on the base substrate, and a pixel electrode disposed on the base substrate. | 06-17-2010 |
20100155715 | DISPLAY SUBSTRATE, AND METHOD OF MANUFACTURING THE SAME - A display substrate according to the present invention comprises a gate line formed on a substrate. a data line, a thin film transistor connected to the gate line and the data line respectively and pixel electrode connected to the thin film transistor, wherein a channel of the thin film transistor is formed in a direction perpendicular to the substrate and, a layer where the channel is formed includes an oxide semiconductor pattern. ON current of thin film transistor of the display substrate can be increased without loss of aperture ratio. | 06-24-2010 |
20100244032 | ALUMINUM-NICKEL ALLOY WIRING MATERIAL, DEVICE FOR A THIN FILM TRANSISTOR AND A THIN FILM TRANSISTOR SUBSTRATE USING THE SAME, AND METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR SUBSTRATE - An Aluminum-Nickel alloy wiring material includes Aluminum, Nickel, Cerium, and Boron. A thin film transistor includes the Aluminum-Nickel alloy wiring material. A sputtering target comprises Aluminum, Nickel, Cerium and Boron. A method of manufacturing a thin film transistor substrate comprises disposing a thin film transistor on a substrate, wherein the thin film transistor includes a wiring circuit layer comprising Aluminum, Nickel, Cerium, and Boron. The Nickel, Cerium and Boron satisfy the following inequalities; 0.5≦X≦5.0, 0.01≦Y≦1.0, and 0.01≦Z≦1.0, respectively, wherein X represents an atomic percentage of Nickel content, Y represents an atomic percentage of Cerium content, and Z represents an atomic percentage of Boron content. | 09-30-2010 |
20100261322 | ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A gate line includes a first seed layer formed on a base substrate and a first metal layer formed on the first seed layer. A first insulation layer is formed on the base substrate. A second insulation layer is formed on the base substrate. Here, a line trench is formed through the second insulation layer in a direction crossing the gate line. A data line includes a second seed layer formed below the line trench and a second metal layer formed in the line trench. A pixel electrode is formed in a pixel area of the base substrate. Therefore, a trench of a predetermined depth is formed using an insulation layer and a metal layer is formed through a plating method, so that a metal line having a sufficient thickness may be formed. | 10-14-2010 |
20100276686 | THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF FABRICATING THE SAME - A thin film transistor (TFT) substrate and a method of fabricating the same are provided. The thin film transistor substrate may have low resistance characteristics and may have reduced mutual diffusion and contact resistance between an active layer pattern and data wiring. The thin film transistor substrate may include gate wiring formed on an insulating substrate. Oxide active layer patterns may be formed on the gate wiring and may include a first substance. Data wiring may be formed on the oxide active layer patterns to cross the gate wiring and may include a second substance. Barrier layer patterns may be disposed between the oxide active layer patterns and the data wiring and may include a third substance. | 11-04-2010 |
20110097961 | DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME - In a display panel and a method of manufacturing the display panel, a gate line, a data line, and source and drain electrodes including a same material as the data line are formed on a substrate constituting the display panel, and the data line includes an aluminum based alloy containing sufficient nickel to inhibit corrosion during dry etching. The corrosion resistance of the AlNi-containing alloy helps prevent corrosion of the data line, the source electrode, and the drain electrode during selective dry etching that shapes these lines and electrodes. | 04-28-2011 |
20110147740 | DISPLAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME - The present invention discloses a thin film transistor (TFT), a method for manufacturing the TFT, and a display substrate using the TFT that may prevent degradation of the characteristics of an oxide semiconductor contained in the TFT by blocking external light from entering a channel region of the oxide semiconductor. The TFT comprises an oxide semiconductor layer; a protective layer disposed on the oxide semiconductor layer and overlapping a channel region of the oxide semiconductor layer; an opaque layer disposed between the oxide semiconductor layer and the protective layer; a source electrode contacting a first side of the oxide semiconductor layer; a drain electrode contacting a second side of the oxide semiconductor layer and facing the source electrode with the channel region disposed between the drain electrode and the source electrode; a gate electrode to apply an electric field to the oxide semiconductor layer; and a gate insulating layer disposed between the gate electrode and the oxide semiconductor layer. | 06-23-2011 |
20110193076 | THIN FILM TRANSISTOR PANEL AND FABRICATING METHOD THEREOF - A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper. | 08-11-2011 |
20110227063 | THIN-FILM TRANSISTOR, METHOD OF FABRICATING THE THIN-FILM TRANSISTOR, AND DISPLAY SUBSTRATE USING THE THIN-FILM TRANSISTOR - Provided is an oxide thin-film transistor (TFT) substrate that may enhance the display quality of a display device and a method of fabricating the same via a simple process. The oxide TFT substrate includes: a substrate, a gate line, a data line, an oxide TFT, and a pixel electrode. An oxide layer of the oxide TFT includes a first region that has semiconductor characteristics and a channel, and a second region that is conductive and surrounds the first region. A portion of the first region is electrically connected to the pixel electrode, and the second region is electrically connected to the data line. | 09-22-2011 |
20120037906 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME - A thin film transistor array substrate capable of reducing degradation of a device due to degradation of an oxide semiconductor pattern and a method of fabricating the same are provided. The thin film transistor array substrate may include an insulating substrate on which a gate electrode is formed, a gate insulating film formed on the insulating substrate, an oxide semiconductor pattern disposed on the gate insulating film, an anti-etching pattern formed on the oxide semiconductor pattern, and a source electrode and a drain electrode formed on the anti-etching pattern. The oxide semiconductor pattern may include an edge portion positioned between the source electrode and the drain electrode, and the edge portion may include at least one conductive region and at least one non-conductive region. | 02-16-2012 |
20120228619 | DISPLAY PANEL AND METHOD FOR MANUFACTURING THE SAME - A display panel includes; a lower gate line, a lower data line disposed substantially perpendicular to the lower gate line, a thin film transistor (“TFT”) connected to the lower gate line and the lower data line, an insulating layer disposed on the lower gate line, the lower data line, and the TFT and having a plurality of trenches exposing the lower gate line and the lower data line, an upper gate line disposed in the trench on the lower gate line, an upper data line disposed in the trench on the lower data line, and a pixel electrode connected to the TFT. | 09-13-2012 |
20130005082 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME - A thin film transistor array substrate having a high charge mobility and that can raise a threshold voltage, and a method of fabricating the thin film transistor array substrate are provided. The thin film transistor array substrate includes: an insulating substrate; a gate electrode formed on the insulating substrate; an oxide semiconductor layer comprising a lower oxide layer formed on the gate electrode and an upper oxide layer formed on the lower oxide layer, such that the oxygen concentration of the upper oxide layer is higher than the oxygen concentration of the lower oxide layer; and a source electrode and a drain electrode formed on the oxide semiconductor layer and separated from each other. | 01-03-2013 |
20130295718 | THIN-FILM TRANSISTOR, METHOD OF FABRICATING THE THIN-FILM TRANSISTOR, AND DISPLAY SUBSTRATE USING THE THIN-FILM TRANSISTOR - An oxide thin-film transistor (TFT) substrate that includes: a substrate, a gate line, a data line, an oxide TFT, and a pixel electrode. An oxide layer of the oxide TFT includes a first region that has semiconductor characteristics and a channel, and a second region that is conductive and surrounds the first region. A portion of the first region is electrically connected to the pixel electrode, and the second region is electrically connected to the data line. | 11-07-2013 |
20130306973 | DISPLAY PANEL - A display panel includes; a lower gate line, a lower data line disposed substantially perpendicular to the lower gate line, a thin film transistor (“TFT”) connected to the lower gate line and the lower data line, an insulating layer disposed on the lower gate line, the lower data line, and the TFT and having a plurality of trenches exposing the lower gate line and the lower data line, an upper gate line disposed in the trench on the lower gate line, an upper data line disposed in the trench on the lower data line, and a pixel electrode connected to the TFT. | 11-21-2013 |
20140209903 | THIN FILM TRANSISTOR PANEL HAVING AN ETCH STOPPER ON SEMICONDUCTOR - A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper. | 07-31-2014 |
20150029426 | LIQUID CRYSTAL DISPLAY AND DRIVING METHOD THEREOF - The present invention relates to a liquid crystal display and a driving method thereof. The liquid crystal display of the present invention includes a pixel electrode including: a first subpixel electrode, a second subpixel electrode, and a third subpixel electrode electrically separated from each other; a first thin film transistor connected to the first subpixel electrode; a second thin film transistor connected to the second subpixel electrode; a third thin film transistor connected to the third subpixel electrode; a fourth thin film transistor connected to the second subpixel electrode and the third subpixel electrode; a first gate line connected to the first to third thin film transistors; a second gate line connected to the fourth thin film transistor; a data line connected to the first and second thin film transistors; and a storage electrode line connected to the third thin film transistor. | 01-29-2015 |