| Patent application number | Description | Published |
|---|
| 20090142892 | Method of fabricating semiconductor device having thin strained relaxation buffer pattern and related device - A method of fabricating a semiconductor device includes forming a buffer pattern on a substrate, the buffer pattern including germanium, recrystallizing the buffer pattern to form a strained relaxation buffer pattern, and forming a tensile silicon cap on the strained relaxation buffer pattern, the cap being under tensile strain. | 06-04-2009 |
| 20100068868 | Wafer temporary bonding method using silicon direct bonding - A wafer temporary bonding method using silicon direct bonding (SDB) may include preparing a carrier wafer and a device wafer, adjusting roughness of a surface of the carrier wafer, and combining the carrier wafer and the device wafer using the SDB. Because the method uses SDB, instead of an adhesive layer, for a temporary bonding process, a module or process to generate and remove an adhesive is unnecessary. Also, a defect in a subsequent process, for example, a back-grinding process, due to irregularity of the adhesive may be prevented. | 03-18-2010 |
| 20100140685 | Nonvolatile Memory Devices - Nonvolatile memory devices and methods of manufacturing nonvolatile memory devices are provided. The method includes patterning a bulk substrate to form an active pillar; forming a charge storage layer on a side surface of active pillar; and forming a plurality of gates connected to the active pillar, the charge storage layer being disposed between the active pillar and the gates. Before depositing a gate, a bulk substrate is etched using a dry etching to form a vertical active pillar which is in a single body with a semiconductor substrate. | 06-10-2010 |
| 20110133063 | Optical waveguide and coupler apparatus and method of manufacturing the same - Optical waveguide and coupler devices and methods include a trench formed in a bulk semiconductor substrate, for example, a bulk silicon substrate. A bottom cladding layer is formed in the trench, and a core region is formed on the bottom cladding layer. A reflective element, such as a distributed Bragg reflector can be formed under the coupler device and/or the waveguide device. Because the optical devices are integrated in a bulk substrate, they can be readily integrated with other devices on a chip or die in accordance with silicon photonics technology. Specifically, for example, the optical devices can be integrated in a DRAM memory circuit chip die. | 06-09-2011 |
| 20110188828 | OPTICAL INPUT/OUTPUT DEVICE FOR PHOTO-ELECTRIC INTEGRATED CIRCUIT DEVICE AND METHOD OF FABRICATING SAME - A photo-electric integrated circuit device comprises an on-die optical input/output device. The on-die optical input/output device comprises a substrate having a trench, a lower cladding layer disposed in the trench and having an upper surface lower than an upper surface of the substrate, and a core disposed on the lower cladding layer at a distance from sidewalls of the trench and having an upper surface at substantially the same level as the upper surface of the substrate. | 08-04-2011 |
| 20110194803 | OPTICAL MODULATOR FORMED ON BULK-SILICON SUBSTRATE - An optical modulator comprises a bulk-silicon substrate comprising a trench having a predetermined width and a predetermined depth. A bottom cladding layer is formed in the trench, and a plurality of waveguides and a phase modulation unit are formed on the bottom cladding layer. A top cladding layer is formed on the plurality of waveguides and the phase modulation unit. | 08-11-2011 |
| 20110223725 | METHODS OF MANUFACTURING BURIED WIRING TYPE SUBSTRATE AND SEMICONDUCTOR DEVICE INCORPORATING BURIED WIRING TYPE SUBSTRATE - A method of manufacturing a buried wiring type substrate comprises implanting hydrogen ions into a single crystalline substrate through a first surface thereof to form an ion implantation region, forming a conductive layer comprising a metal on the first surface of the single crystalline substrate, forming an insulation layer comprising silicon oxide on the conductive layer, bonding the insulation layer to a support substrate to form a preliminary buried wiring type substrate, and separating the single crystalline substrate at the ion implantation region to form a single crystalline semiconductor layer on the conductive layer. | 09-15-2011 |
| 20110243492 | SILICON BASED OPTICAL MODULATORS AND METHODS OF FABRICATING THE SAME - A silicon based optical modulator apparatus can include a lateral slab on an optical waveguide, the lateral slab protruding beyond side walls of the optical waveguide so that a portion of the optical waveguide protrudes from the lateral slab towards a substrate. | 10-06-2011 |
