Patent application number | Description | Published |
20090142892 | Method of fabricating semiconductor device having thin strained relaxation buffer pattern and related device - A method of fabricating a semiconductor device includes forming a buffer pattern on a substrate, the buffer pattern including germanium, recrystallizing the buffer pattern to form a strained relaxation buffer pattern, and forming a tensile silicon cap on the strained relaxation buffer pattern, the cap being under tensile strain. | 06-04-2009 |
20100068868 | Wafer temporary bonding method using silicon direct bonding - A wafer temporary bonding method using silicon direct bonding (SDB) may include preparing a carrier wafer and a device wafer, adjusting roughness of a surface of the carrier wafer, and combining the carrier wafer and the device wafer using the SDB. Because the method uses SDB, instead of an adhesive layer, for a temporary bonding process, a module or process to generate and remove an adhesive is unnecessary. Also, a defect in a subsequent process, for example, a back-grinding process, due to irregularity of the adhesive may be prevented. | 03-18-2010 |
20100140685 | Nonvolatile Memory Devices - Nonvolatile memory devices and methods of manufacturing nonvolatile memory devices are provided. The method includes patterning a bulk substrate to form an active pillar; forming a charge storage layer on a side surface of active pillar; and forming a plurality of gates connected to the active pillar, the charge storage layer being disposed between the active pillar and the gates. Before depositing a gate, a bulk substrate is etched using a dry etching to form a vertical active pillar which is in a single body with a semiconductor substrate. | 06-10-2010 |
20110133063 | Optical waveguide and coupler apparatus and method of manufacturing the same - Optical waveguide and coupler devices and methods include a trench formed in a bulk semiconductor substrate, for example, a bulk silicon substrate. A bottom cladding layer is formed in the trench, and a core region is formed on the bottom cladding layer. A reflective element, such as a distributed Bragg reflector can be formed under the coupler device and/or the waveguide device. Because the optical devices are integrated in a bulk substrate, they can be readily integrated with other devices on a chip or die in accordance with silicon photonics technology. Specifically, for example, the optical devices can be integrated in a DRAM memory circuit chip die. | 06-09-2011 |
20110188828 | OPTICAL INPUT/OUTPUT DEVICE FOR PHOTO-ELECTRIC INTEGRATED CIRCUIT DEVICE AND METHOD OF FABRICATING SAME - A photo-electric integrated circuit device comprises an on-die optical input/output device. The on-die optical input/output device comprises a substrate having a trench, a lower cladding layer disposed in the trench and having an upper surface lower than an upper surface of the substrate, and a core disposed on the lower cladding layer at a distance from sidewalls of the trench and having an upper surface at substantially the same level as the upper surface of the substrate. | 08-04-2011 |
20110194803 | OPTICAL MODULATOR FORMED ON BULK-SILICON SUBSTRATE - An optical modulator comprises a bulk-silicon substrate comprising a trench having a predetermined width and a predetermined depth. A bottom cladding layer is formed in the trench, and a plurality of waveguides and a phase modulation unit are formed on the bottom cladding layer. A top cladding layer is formed on the plurality of waveguides and the phase modulation unit. | 08-11-2011 |
20110223725 | METHODS OF MANUFACTURING BURIED WIRING TYPE SUBSTRATE AND SEMICONDUCTOR DEVICE INCORPORATING BURIED WIRING TYPE SUBSTRATE - A method of manufacturing a buried wiring type substrate comprises implanting hydrogen ions into a single crystalline substrate through a first surface thereof to form an ion implantation region, forming a conductive layer comprising a metal on the first surface of the single crystalline substrate, forming an insulation layer comprising silicon oxide on the conductive layer, bonding the insulation layer to a support substrate to form a preliminary buried wiring type substrate, and separating the single crystalline substrate at the ion implantation region to form a single crystalline semiconductor layer on the conductive layer. | 09-15-2011 |
20110243492 | SILICON BASED OPTICAL MODULATORS AND METHODS OF FABRICATING THE SAME - A silicon based optical modulator apparatus can include a lateral slab on an optical waveguide, the lateral slab protruding beyond side walls of the optical waveguide so that a portion of the optical waveguide protrudes from the lateral slab towards a substrate. | 10-06-2011 |
20110250738 | METHODS OF SELECTIVELY FORMING SILICON-ON-INSULATOR STRUCTURES USING SELECTIVE EXPITAXIAL GROWTH PROCESS - A method of forming a silicon based optical waveguide can include forming a silicon-on-insulator structure including a non-crystalline silicon portion and a single crystalline silicon portion of an active silicon layer in the structure. The non-crystalline silicon portion can be replaced with an amorphous silicon portion and maintaining the single crystalline silicon portion and the amorphous portion can be crystallized using the single crystalline silicon portion as a seed to form a laterally grown single crystalline silicon portion including the amorphous and single crystalline silicon portions. | 10-13-2011 |
20110316168 | Semiconductor Device and Method of Fabricating the Same - A semiconductor device includes a via structure and a conductive structure. The via structure has a surface with a planar portion and a protrusion portion. The conductive structure is formed over at least part of the planar portion and not over at least part of the protrusion portion of the via structure. For example, the conductive structure is formed only onto the planar portion and not onto any of the protrusion portion for forming high quality connection between the conductive structure and the via structure. | 12-29-2011 |
20120009747 | Methods of Manufacturing Nonvolatile Memory Devices - Nonvolatile memory devices and methods of manufacturing nonvolatile memory devices are provided. The method includes patterning a bulk substrate to form an active pillar; forming a charge storage layer on a side surface of active pillar; and forming a plurality of gates connected to the active pillar, the charge storage layer being disposed between the active pillar and the gates. Before depositing a gate, a bulk substrate is etched using a dry etching to form a vertical active pillar which is in a single body with a semiconductor substrate. | 01-12-2012 |
20120025265 | PHOTODETECTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a photodetector structure is provided. The method includes forming a structural layer by making a trench in a bulk silicon substrate and filling the trench with a cladding material, forming a single-crystallized silicon layer on the structural layer, and forming a germanium layer on the single-crystallized silicon layer. | 02-02-2012 |
20120039564 | Photoelectric Integrated Circuit Devices And Methods Of Forming The Same - A photoelectric integrated circuit device may include a substrate including an electronic device region and an on die optical input/output device region, the substrate having a trench in the on die optical input/output device region; a lower clad layer provided in the trench, the lower clad layer having an upper surface lower than a surface of the substrate; a core provided on the lower clad layer; an insulating pattern provided on the core; an optical detection pattern provided on the insulating pattern, the optical detection pattern having at least a portion provided in the trench; and at least one transistor provided on the substrate of the electronic device region. | 02-16-2012 |
20120088323 | METHOD FOR FORMING LIGHT GUIDE LAYER IN SEMICONDUCTOR SUBSTRATE - A method for forming a light guide layer with improved transmission reliability in a semiconductor substrate, the method including forming a trench in the semiconductor substrate, forming a cladding layer and a preliminary light guide layer in the trench such that only one of opposite side end portions of the preliminary light guide layer is in contact with an inner sidewall of the trench, and performing a thermal treatment on the substrate to change the preliminary light guide layer into the light guide layer. | 04-12-2012 |
20120108034 | Substrate Structure Having Buried Wiring And Method For Manufacturing The Same, And Semiconductor Device And Method For Manufacturing The Same Using The Substrate Structure - Provided are a substrate structure which may solve problems generated in a manufacturing process while having a relatively low resistance buried wiring, a method for manufacturing the substrate structure, and a semiconductor device and a method for manufacturing the same using the substrate structure. The substrate structure may include a supporting substrate, an insulating layer disposed on the supporting substrate, a line-shaped conductive layer pattern disposed in the insulating layer to extend in a first direction, and a line-shaped semiconductor pattern disposed in the insulating layer and on the conductive layer pattern to extend in the first direction and having a top surface exposed to the outside of the insulating layer. | 05-03-2012 |
20120132986 | SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME - A semiconductor device includes a substrate having a plurality of horizontal channel transistors formed thereon, an insulation layer structure on the substrate and covering the horizontal transistors, and a plurality of vertical channel transistors on the insulation layer structure. | 05-31-2012 |
20120314991 | SEMICONDUCTOR DEVICES HAVING OPTICAL TRANSCEIVER - Semiconductor devices having an optical transceiver include a cladding on a substrate, a protrusion vertically extending trough the cladding and materially in continuity with the substrate, and a coupler on the cladding and the protrusion. | 12-13-2012 |
20120314993 | BURIED-TYPE OPTICAL INPUT/OUTPUT DEVICES AND METHODS OF MANUFACTURING THE SAME - Optical input/output (I/O) devices, which include a substrate including a trench, a waveguide within the trench of the substrate; and a photodetector within the trench and optically connected to the waveguide. An upper surface of the photodetector is at a same level as an upper surface of the waveguide. | 12-13-2012 |
20130062719 | OPTICAL INPUT/OUTPUT DEVICE AND METHOD OF FABRICATING THE SAME - An optical input/output (I/O) device is provided. The device includes a substrate including an upper trench; a waveguide disposed within the upper trench of the substrate; a photodetector disposed within the upper trench of the substrate and comprising a first end surface optically connected to an end surface of the waveguide; and a light-transmitting insulating layer interposed between the end surface of the waveguide and the first end surface of the photodetector. | 03-14-2013 |
20130092980 | PHOTODETECTOR STRUCTURES INCLUDING CROSS-SECTIONAL WAVEGUIDE BOUNDARIES - A photodetector structure can include a silicon substrate and a silicon layer on the silicon substrate, that can include a first portion of an optical transmission medium that further includes a silicon cross-sectional transmission face. A germanium layer can be on the silicon substrate and can include a second portion of the optical transmission medium, adjacent to the first portion can include a germanium cross-sectional transmission face butt-coupled to the silicon cross-sectional transmission face. | 04-18-2013 |
20130134603 | Semiconductor Devices Including Protected Barrier Layers - Provided are semiconductor devices and methods of manufacturing the same. the device may include a semiconductor substrate, a first conductive pattern provided in the semiconductor substrate to have a first width at a surface level of the semiconductor substrate, a barrier pattern covering the first conductive pattern and having a second width substantially greater than the first width, a second conductive pattern partially covering the barrier pattern and having a third width substantially smaller than the second width, and an insulating pattern disposed on a sidewall of the second conductive pattern. The second width may be substantially equal to or less than to a sum of the third width and a width of the insulating pattern. | 05-30-2013 |
20130200525 | VIA CONNECTION STRUCTURES, SEMICONDUCTOR DEVICES HAVING THE SAME, AND METHODS OF FABRICATING THE STRUCTURES AND DEVICES - A semiconductor device including a lower layer, an insulating layer on a first side of the lower layer, an interconnection structure in the insulating layer, a via structure in the lower layer. The via structure protrudes into the insulating layer and the interconnection structure. | 08-08-2013 |
20130207241 | Semiconductor Devices Having Through-Vias and Methods for Fabricating the Same - The inventive concept provides semiconductor devices having through-vias and methods for fabricating the same. The method may include forming a via-hole opened toward a top surface of a substrate and partially penetrating the substrate, forming a via-insulating layer having a first thickness on a bottom surface of the via-hole and a second thickness smaller than the first thickness on an inner sidewall of the via-hole, forming a through-via in the via-hole which the via-insulating layer is formed in, and recessing a bottom surface of the substrate to expose the through-via. Forming the via-insulating layer may include forming a flowable layer on the substrate, and converting the flowable layer into a first flowable chemical vapor deposition layer having the first thickness on the bottom surface of the via-hole. | 08-15-2013 |
20130207242 | Semiconductor Devices Having Through-Vias and Methods for Fabricating the Same - Semiconductor devices having through-vias and methods for fabricating the same are described. The method may include forming a hole opened toward a top surface of a substrate and partially penetrating the substrate, forming a sacrificial layer partially filling the hole, forming a through-via in the hole partially filled with the sacrificial layer, forming a via-insulating layer between the through-via and the substrate, and exposing the through-via through a bottom surface of the substrate. Forming the sacrificial layer may include forming an insulating flowable layer on the substrate, and constricting the insulating flowable layer to form a solidified flowable layer. | 08-15-2013 |
20130210222 | SEMICONDUCTOR DEVICES HAVING CONDUCTIVE VIA STRUCTURES AND METHODS FOR FABRICATING THE SAME - In one embodiment, the method includes forming a conductive via structure in a base layer. The base layer has a first surface and a second surface, and the second surface is opposite the first surface. The method further includes removing the second surface of the base layer to expose the conductive via structure such that the conductive via structure protrudes from the second surface, and forming a first lower insulating layer over the second surface such that an end surface of the conductive via structure remains exposed by the first lower insulating layer. | 08-15-2013 |
20130224935 | OPTICAL INPUT/OUTPUT DEVICE FOR PHOTO-ELECTRIC INTEGRATED CIRCUIT DEVICE AND METHOD OF FABRICATING SAME - A photo-electric integrated circuit device comprises an on-die optical input/output device. The on-die optical input/output device comprises a substrate having a trench, a lower cladding layer disposed in the trench and having an upper surface lower than an upper surface of the substrate, and a core disposed on the lower cladding layer at a distance from sidewalls of the trench and having an upper surface at substantially the same level as the upper surface of the substrate. | 08-29-2013 |
20140035164 | Semiconductor Device and Method of Fabricating the Same - A semiconductor device includes a via structure having a top surface with a planar portion and a protrusion portion that is surrounded by the planar portion, and includes a conductive structure including a plurality of conductive lines contacting at least a part of the top surface of the via structure. | 02-06-2014 |
20140048952 | SEMICONDUCTOR DEVICE INCLUDING THROUGH VIA STRUCTURES AND REDISTRIBUTION STRUCTURES - Semiconductor device including through via structure and redistribution structures is provided. The semiconductor device may include internal circuits on a first side of a substrate, a through via structure vertically penetrating the substrate to be electrically connected to one of the internal circuits, a redistribution structure on a second side of the substrate and electrically connected to the through via structure, and an insulating layer between the second side of the substrate and the redistribution structure. The redistribution structure may include a redistribution barrier layer and a redistribution metal layer, and the redistribution barrier layer may extend on a bottom surface of the redistribution metal layer and may partially surround a side of the redistribution metal layer. | 02-20-2014 |
20140106649 | WAFER PROCESSING METHODS - Wafer processing methods are provided. The methods may include cutting respective edges of a wafer and an adhesive a predetermined angle before grinding a back surface of the wafer. | 04-17-2014 |
20140110894 | Wafer Carrier Having Cavity - A wafer carrier includes a base having a cavity provided at the center of the base and an outer sidewall extending along and away from an edge of the base to define the cavity. The cavity is configured to be filled with an adhesive layer. The wafer carrier is configured to be bonded to a wafer with an adhesive layer in the cavity of base such that the outer sidewall faces and is in contact with an edge of the wafer and the cavity faces a center of the wafer. | 04-24-2014 |
20140179103 | SEMICONDUCTOR DEVICES HAVING THROUGH-VIAS AND METHODS FOR FABRICATING THE SAME - A conductive via of a semiconductor device is provided extending in a vertical direction through a substrate, a first end of the conductive via extending through a first surface of the substrate, so that the first end protrudes in the vertical direction relative to the first surface of the substrate. An insulating layer is provided on the first end of the conductive via and on the first surface of the substrate. An upper portion of a mask layer pattern is removed so that a capping portion of the insulating layer that is on the first end of the conductive via is exposed. A portion of the insulating layer at a side of, and spaced apart from, the conductive via, is removed, to form a recess in the insulating layer. The capping portion of the insulating layer on the first end of the conductive via is simultaneously removed. | 06-26-2014 |
20140199810 | Methods for Forming Semiconductor Devices Using Sacrificial Layers - A fabricating method for a semiconductor device is provided. The fabricating method includes providing a first wafer, forming a sacrificial layer on the first wafer, forming a release layer on the sacrificial layer, forming an adhesive layer on the release layer, and placing a second wafer on the adhesive layer and bonding the first wafer to the second wafer. | 07-17-2014 |
20140217603 | Semiconductor Device and Method of Fabricating the Same - A semiconductor device includes a via structure and a conductive structure. The via structure has a surface with a planar portion and a protrusion portion. The conductive structure is formed over at least part of the planar portion and not over at least part of the protrusion portion of the via structure. For example, the conductive structure is formed only onto the planar portion and not onto any of the protrusion portion for forming high quality connection between the conductive structure and the via structure. | 08-07-2014 |
20140327150 | SEMICONDUCTOR PACKAGES, METHODS OF MANUFACTURING THE SAME, AND SEMICONDUCTOR PACKAGE STRUCTURES INCLUDING THE SAME - A semiconductor device includes a substrate including a first surface and a second surface opposite to each other, a through-via electrode extending through the substrate. The through-via electrode has an interconnection metal layer and a barrier metal layer surrounding a side surface of the interconnection metal layer. One end of the through-via electrode protrudes above the second surface. A spacer insulating layer may be provided on an outer sidewall of the through-via electrode. A through-via electrode pad is connected to the through-via electrode and extends on the spacer insulating layer substantially parallel to the second surface. A first silicon oxide layer and a silicon nitride layer are stacked on the second surface. A thickness of the first silicon oxide layer is greater than a thickness of the silicon nitride layer. | 11-06-2014 |
20150093896 | SEMICONDUCTOR DEVICES HAVING THROUGH-VIAS AND METHODS FOR FABRICATING THE SAME - The inventive concept provides semiconductor devices having through-vias and methods for fabricating the same. The method may include forming a via-hole opened toward a top surface of a substrate and partially penetrating the substrate, forming a via-insulating layer having a first thickness on a bottom surface of the via-hole and a second thickness smaller than the first thickness on an inner sidewall of the via-hole, forming a through-via in the via-hole which the via-insulating layer is formed in, and recessing a bottom surface of the substrate to expose the through-via. Forming the via-insulating layer may include forming a flowable layer on the substrate, and converting the flowable layer into a first flowable chemical vapor deposition layer having the first thickness on the bottom surface of the via-hole. | 04-02-2015 |
20150132950 | SEMICONDUCTOR PACKAGES, METHODS OF MANUFACTURING THE SAME, AND SEMICONDUCTOR PACKAGE STRUCTURES INCLUDING THE SAME - A semiconductor device includes a substrate including a first surface and a second surface opposite to each other, a through-via electrode extending through the substrate. The through-via electrode has an interconnection metal layer and a barrier metal layer surrounding a side surface of the interconnection metal layer. One end of the through-via electrode protrudes above the second surface. A spacer insulating layer may be provided on an outer sidewall of the through-via electrode. A through-via electrode pad is connected to the through-via electrode and extends on the spacer insulating layer substantially parallel to the second surface. A first silicon oxide layer and a silicon nitride layer are stacked on the second surface. A thickness of the first silicon oxide layer is greater than a thickness of the silicon nitride layer. | 05-14-2015 |
20150137326 | SEMICONDUCTOR DEVICES HAVING THROUGH-ELECTRODES AND METHODS FOR FABRICATING THE SAME - A semiconductor device includes a semiconductor substrate having a top surface and a bottom surface facing each other, an interlayer dielectric layer provided on the top surface of the semiconductor substrate and including an integrated circuit, an inter-metal dielectric layer provided on the interlayer dielectric layer and including at least one metal interconnection electrically connected to the integrated circuit, an upper dielectric layer disposed on the inter-metal dielectric layer, a through-electrode penetrating the inter-metal dielectric layer, the interlayer dielectric layer, and the semiconductor substrate, a via-dielectric layer surrounding the through-electrode and electrically insulating the through-electrode from the semiconductor substrate. The via-dielectric layer includes one or more air-gaps between the upper dielectric layer and the interlayer dielectric layer. | 05-21-2015 |
20150155233 | SEMICONDUCTOR DEVICES HAVING THROUGH-ELECTRODES AND METHODS FOR FABRICATING THE SAME - The present inventive concepts provide semiconductor devices and methods for fabricating the same. The method includes forming an inter-metal dielectric layer including a plurality of dielectric layers on a substrate, forming a via-hole vertically penetrating the inter-metal dielectric layer and the substrate, providing carbon to at least one surface, such as a surface including carbon in the plurality of dielectric layers exposed by the via-hole, forming a via-dielectric layer covering an inner surface of the via-hole, and forming a through-electrode surrounded by the via-dielectric layer in the via-hole. | 06-04-2015 |
20150243637 | SEMICONDUCTOR DEVICES HAVING THROUGH-VIAS AND METHODS FOR FABRICATING THE SAME - A conductive via of a semiconductor device is provided extending in a vertical direction through a substrate, a first end of the conductive via extending through a first surface of the substrate, so that the first end protrudes in the vertical direction relative to the first surface of the substrate. An insulating layer is provided on the first end of the conductive via and on the first surface of the substrate. An upper portion of a mask layer pattern is removed so that a capping portion of the insulating layer that is on the first end of the conductive via is exposed. A portion of the insulating layer at a side of, and spaced apart from, the conductive via, is removed, to form a recess in the insulating layer. The capping portion of the insulating layer on the first end of the conductive via is simultaneously removed. | 08-27-2015 |