| Patent application number | Description | Published |
|---|
| 20090180192 | Method and Apparatus for Imaging - A method for forming an image of a beam source that during operation provides a beam, and wherein the beam is split so as to divide the beam into beamlets, wherein a redirecting organ is used with which each individual beamlet is redirected to a predetermined degree with the extent of redirection of each beamlet by means of the redirecting organ depending on the distance of that beamlet to a central axis of the beam, such that the beamlets converge in a common point with the beamlets from the beam source being focused to foci located in the redirecting organ, and with the beamlets originating from these foci being focussed in the common imaging point. | 07-16-2009 |
| 20090212229 | PROJECTION LENS ARRANGEMENT - A charged particle multi-beamlet system for exposing a target using a plurality of beamlets. The system comprises a first plate having a plurality of holes formed in it, with a plurality of electrostatic projection lens systems formed at the location of each hole so that each electron beamlet passes through a corresponding projection lens system. The holes have sufficiently uniform placement and dimensions to enable focusing of the beamlets onto the surface of the target using a common control voltage. Preferably the electrostatic projection lens systems are controlled by a common electrical signal to focus the electron beamlets on the surface without correction of the focus or path of individual electron beamlets. | 08-27-2009 |
| 20090261267 | PROJECTION LENS ARRANGEMENT - A projection lens arrangement for a charged particle multi-beamlet system, the projection lens arrangement including one or more plates and one or more arrays of projection lenses. Each plate has an array of apertures formed in it, with projection lenses formed at the locations of the apertures. The arrays of projection lenses form an array of projection lens systems, each projection lens system comprising one or more of the projection lenses formed at corresponding points of the one or more arrays of projection lenses. The projection lens systems are arranged at a pitch in the range of about 1 to 3 times the diameter of the plate apertures, and each projection lens system is for demagnifying and focusing one or more of the charged particle beamlets on to the target plane, each projection lens system has an effective focal length in the range of about 1 to 5 times the pitch, and demagnifies the charged particle beamlets by at least 25 times. | 10-22-2009 |
| 20100045958 | LITHOGRAPHY SYSTEM - A maskless lithography system for transferring a pattern onto the surface of a target. At least one beam generator for generating a plurality of beamlets. A plurality of modulators modulate the magnitude of a beamlet, and a control unit controls of the modulators. The control unit generates and delivers pattern data to the modulators for controlling the magnitude of each individual beamlet. The control unit includes at least one data storage for storing the pattern data, at least one readout unit for reading out the data from the data storage, at least one data converter for converting the data that is read out from the data storage into at least one modulated light beam, and at least one optical transmitter for transmitting the at least one modulated light beam to the modulation modulators. | 02-25-2010 |
| 20100219357 | SYSTEM, METHOD AND APPARATUS FOR MULTI-BEAM LITHOGRAPHY INCLUDING A DISPENSER CATHODE FOR HOMOGENEOUS ELECTRON EMISSION - A dispenser cathode which is comprises an emission surface, a reservoir for material releasing, when heated, work-function-lowering particles, and at least one passage for allowing diffusion of work-function-lowering particles from said reservoir to said emission surface, and emission surface comprising at least one emission area and at least one non-emission area covered with emission-suppressing material and surrounding each emission area, said non-emission area comprising at least one passage connecting said reservoir with said non-emission area and debouching within a diffusion length distance from an emission area for allowing diffusion of work-function-lowering particles from said reservoir to said emission area. | 09-02-2010 |
| 20110068276 | MULTIPLE BEAM CHARGED PARTICLE OPTICAL SYSTEM - The invention relates to a multiple beam charged particle optical system comprising:
| 03-24-2011 |
| 20110163244 | MULTIPLE BEAM CHARGED PARTICLE OPTICAL SYSTEM - The invention relates to a multiple be charged particle optical system, comprising an electrostatic lens structure with at least one electrode, provided with apertures, wherein the effective size of a lens field effected by said electrode at a said aperture is made ultimately small. The system may comprise a diverging charged particle beam part, in which the lens structure is included. The physical dimension of the lens is made ultimately small, in particular smaller than one mm, more in particular less than a few tens of microns. En further elaboration, a lens is combined with a current limiting aperture, aligned such relative to a lens of said structure, that a virtual aperture effected by said current limiting aperture in said lens is situated in an optimum position with respect to minimizing aberrations total. | 07-07-2011 |
| 20110168910 | MULTIPLE BEAM CHARGED PARTICLE OPTICAL SYSTEM - The invention relates to a multiple beam charged particle optical system, comprising an electrostatic lens structure with at least one electrode, provided with apertures, wherein the effective size of a lens field effected by said electrode at a said aperture is made ultimately small. The system may comprise a diverging charged particle beam part, in which the lens structure is included. The physical dimension of the lens is made ultimately small, in particular smaller than one mm, more in particular less than a few tens of microns. In further elaboration, a lens is combined with a current limiting aperture, aligned such relative to a lens of said structure, that a virtual aperture effected by said current limiting aperture in said lens is situated in an optimum position with respect to minimizing aberrations total. | 07-14-2011 |
