| Patent application number | Description | Published |
|---|
| 20080232002 | MRAM TUNNEL BARRIER STRUCTURE AND METHODS - A magnetic tunnel junction (MTJ) structure is of the type having a tunnel barrier positioned between a fixed ferromagnetic layer and a free ferromagnetic layer, the tunnel barrier includes a first barrier layer contacting either the fixed ferromagnetic layer or the free ferromagnetic layer. The first barrier layer transmits a high spin polarization and is selected from the group consisting of metal oxides, metal nitrides, and metal oxynitrides. The second barrier layer, which contacts the first barrier layer, has a low barrier height and is selected from the group consisting of metal oxides, metal nitrides, and metal oxynitrides. | 09-25-2008 |
| 20090085058 | ELECTRONIC DEVICE INCLUDING A MAGNETO-RESISTIVE MEMORY DEVICE AND A PROCESS FOR FORMING THE ELECTRONIC DEVICE - A process of forming an electronic device can include forming a stack including a tunnel barrier layer. The tunnel barrier layer can have a ratio of the metal atoms to oxygen atoms of greater than a stoichiometric ratio, wherein the ratio has a particular value. The process can also include forming a gettering layer having a composition capable of gettering oxygen, and depositing an insulating layer over the gettering layer. The process can further include exposing the insulating layer to a temperature of at least approximately 60° C. In one embodiment, after such exposure, a portion of the gettering layer is converted to an insulating material. In another embodiment, an electronic device can include a magnetic tunnel junction and an adjacent insulating layer lying within an opening in another insulating layer. | 04-02-2009 |
| 20090096042 | MAGNETIC ELEMENT HAVING REDUCED CURRENT DENSITY - A memory device includes a fixed magnetic layer, a tunnel barrier layer over the fixed magnetic layer, and a free magnetic structure formed over the tunnel barrier layer, wherein the free magnetic structure has layers or sub-layers that are weakly magnetically coupled. Thus, a low programming voltage can be used to avoid tunnel barrier breakdown, and a small pass transistor can be used to save die real estate. | 04-16-2009 |
| 20090243607 | Magnetic Sensor Design for Suppression of Barkhausen Noise - A semiconductor process and apparatus provide a high-performance magnetic field sensor from two differential sensor configurations ( | 10-01-2009 |
| 20090279212 | Two-Axis Magnetic Field Sensor with Multiple Pinning Directions - A fabrication process and apparatus provide a high-performance magnetic field sensor ( | 11-12-2009 |
| 20100148167 | MAGNETIC TUNNEL JUNCTION STACK - A magnetic tunnel junction ( | 06-17-2010 |
| 20100213933 | MAGNETIC FIELD SENSING DEVICE - A magnetic field sensing device for determining the strength of a magnetic field, includes four magnetic tunnel junction elements or element arrays ( | 08-26-2010 |
| 20100276389 | TWO-AXIS MAGNETIC FIELD SENSOR WITH SUBSTANTIALLY ORTHOGONAL PINNING DIRECTIONS - A fabrication process and apparatus provide a high-performance magnetic field sensor ( | 11-04-2010 |
| 20110062538 | MAGNETIC ELEMENT HAVING REDUCED CURRENT DENSITY - A memory device includes a fixed magnetic layer, a tunnel barrier layer over the fixed magnetic layer, and a free magnetic structure formed over the tunnel barrier layer, wherein the free magnetic structure has layers or sub-layers that are weakly magnetically coupled. Thus, a low programming voltage can be used to avoid tunnel barrier breakdown, and a small pass transistor can be used to save die real estate. | 03-17-2011 |
