Patent application number | Description | Published |
20080217181 | FREE STANDING SINGLE-CRYSTAL NANOWIRE GROWTH BY ELECTRO-CHEMICAL DEPOSITION - The present invention relates to a method for obtaining monocrystalline or single crystal nanowires. Said nanowires are grown in a pattern making use of electro-chemical deposition techniques. Most preferred, the electrolytic bath is based on chlorides and has an acidic pH. Single element as well as combinations of two elements nanowires can be grown. Depending on the element properties the obtained nanowire can have metallic (conductive) or semi-metallic (semi-conductive) properties. The observed nanowire growth presents an unusual behavior compared to the classical nanowire template-assisted growth where a cap is formed as soon as the metal grows out of the pattern. Under given conditions of bath composition and potential (current) settings the nanowires grow out of the pattern up to a few microns without any significant lateral overgrowth. | 09-11-2008 |
20080284036 | STRUCTURE FOR OPTIMIZING FILL IN SEMICONDUCTOR FEATURES DEPOSITED BY ELECTROPLATING - A structure and process are provided that are capable of reducing the occurrence of discontinuities within the metallization, such as voiding or seams, formed during electroplating at the edges of semiconductor metallization arrays. The structure includes a metallization bar located around the periphery of the array. The process employs the structure during electroplating. | 11-20-2008 |
20090014878 | STRUCTURE AND METHOD OF FORMING ELECTRODEPOSITED CONTACTS - A contact metallurgy structure comprising a patterned dielectric layer having cavities on a substrate; a silicide or germanide layer such as of cobalt and/or nickel located at the bottom of cavities; a contact layer comprising Ti or Ti/TiN located on top of the dielectric layer and inside the cavities and making contact to the silicide or germanide layer on the bottom; a diffusion barrier layer located on top of the contact layer and inside the cavities; optionally a seed layer for plating located on top of the barrier layer; a metal fill layer in vias is provided along with a method of fabrication. The metal fill layer is electrodeposited with at least one member selected from the group consisting of copper, rhodium, ruthenium, iridium, molybdenum, gold, silver, nickel, cobalt, silver, gold, cadmium and zinc and alloys thereof. When the metal fill layer is rhodium, ruthenium, or iridium, an effective diffusion barrier layer is not required between the fill metal and the dielectric. When the barrier layer is platable, such as ruthenium, rhodium, platinum, or iridium, the seed layer is not required. | 01-15-2009 |
20110084393 | METHOD OF FORMING ELECTRODEPOSITED CONTACTS - A contact metallurgy structure comprising a patterned dielectric layer having vias on a substrate; a silicide layer of cobalt and/or nickel located at the bottom of vias; a contact layer comprising Ti located in vias on top of the silicide layer; a diffusion layer located in vias and on top of the contact layer; a metal fill layer in vias is provided along with a method of fabrication. The metal fill layer comprises at least one member selected from the group consisting of copper, ruthenium, rhodium platinum, palladium, iridium, rhenium, tungsten, gold, silver and osmium and alloys thereof. When the metal fill layer comprises rhodium, the diffusion layer is not required. Optionally a seed layer for the metal fill layer can be employed. | 04-14-2011 |
Patent application number | Description | Published |
20080277285 | BIPOLAR ELECTROLESS PROCESSING METHODS - A bipolar photo-electrochemical process is disclosed for electroless deposition (referred to as photo Bi-OCD) of a metallic compound onto the top surface of a semiconducting substrate whereby differential illumination of the front side of the substrate versus the back side of the substrate provides a driving force to separate the cathodic and anodic partial reactions leading to high yield deposition of the metallic compound. A selective photo Bi-OCD process is further disclosed whereby the top surface of the substrate is at least partly covered with an insulating pattern such that the deposition of the metallic compound takes place selectively into the openings of the pattern. | 11-13-2008 |
20090072222 | METHOD FOR FORMING CATALYST NANOPARTICLES FOR GROWING ELONGATED NANOSTRUCTURES - Preferred embodiments provide a method for forming at least one catalyst nanoparticle on at least one sidewall of a three-dimensional structure on a main surface of a substrate, the main surface lying in a plane and the sidewall of the three-dimensional structure lying in a plane substantially perpendicular to the plane of the main surface of the substrate. The method comprises obtaining a three-dimensional structure on the main surface, the three-dimensional structure comprising catalyst nanoparticles embedded in a non-catalytic matrix and selectively removing at least part of the non-catalytic matrix at the sidewalls of the three-dimensional structure to thereby expose at least one catalyst nanoparticle. According to preferred embodiments a method is also provided for forming at least one elongated nanostructure, such as e.g. a nanowire or carbon nanotube, using the catalyst nanoparticles formed by the method according to preferred embodiments as a catalyst. The methods according to preferred embodiments may be used in, for example, semiconductor processing. The methods according to preferred embodiments are scalable and fully compatible with existing semiconductor processing technology. | 03-19-2009 |
20090215276 | PHOTOELECTROCHEMICAL CELL WITH CARBON NANOTUBE-FUNCTIONALIZED SEMICONDUCTOR ELECTRODE - Photoelectrochemical cells and methods are provided, in particular, to the functionalization of semiconductor surfaces such that its semiconducting and light generating properties are maintained and the surface becomes stable in wet environments. In particular the preferred embodiments relate to unstable semiconductor materials which have photocurrent generating properties, and to methods for the functionalization of surfaces with metallic carbon nanotubes (CNTs). | 08-27-2009 |
20100075486 | FORMATION OF SINGLE CRYSTAL SEMICONDUCTOR NANOWIRES - A method is provided for growing mono-crystalline nanostructures onto a substrate. The method comprises at least the steps of first providing a pattern onto a main surface of the substrate wherein said pattern has openings extending to the surface of the substrate, providing a metal into the openings of the pattern on the exposed main surface, at least partly filling the opening with amorphous material, and then annealing the substrate at temperatures between 300° C. and 1000° C. thereby transforming the amorphous material into a mono-crystalline material by metal mediated crystallization to form the mono-crystalline nanostructure. | 03-25-2010 |
20100096618 | DOPING OF NANOSTRUCTURES - A catalyst particle for use in growth of elongated nanostructures, such as e.g. nanowires, is provided. The catalyst particle comprises a catalyst compound for catalyzing growth of an elongated nanostructure comprising a nanostructure material without substantially dissolving in the nanostructure material and at least one dopant element for doping the elongated nanostructure during growth by substantially completely dissolving in the nanostructure material. A method for forming an elongated nanostructure, e.g. nanowire, on a substrate using the catalyst particle is also provided. The method allows controlling dopant concentration in the elongated nanostructures, e.g. nanowires, and allows elongated nanostructures with a low dopant concentration of lower than 10 | 04-22-2010 |
20100273323 | PRE-TREATMENT METHOD TO INCREASE COPPER ISLAND DENSITY OF CU ON BARRIER LAYERS - A method for producing on-chip interconnect structures on a substrate is provided, comprising at least the steps of providing a substrate and depositing a ruthenium-comprising layer on top of said substrate, and then performing a pre-treatment of the Ru-comprising layer electrochemically with an HBF | 10-28-2010 |
20110045662 | LOW-TEMPERATURE FORMATION OF LAYERS OF POLYCRYSTALLINE SEMICONDUCTOR MATERIAL - The present invention provides a method for forming a layer ( | 02-24-2011 |
20110315951 | METHOD FOR FORMING A CATALYST SUITABLE FOR GROWTH OF CARBON NANOTUBES - The present disclosure is related to a method for forming a catalyst nanoparticle on a metal surface, the nanoparticle being suitable for growing a single nanostructure, in particular a carbon nanotube, the method comprising at least the steps of: providing a substrate, having a metal layer on at least a portion of the substrate surface, depositing a sacrificial layer at least on the metal layer, producing a small hole in the sacrificial layer, thereby exposing the metal layer, providing a single catalyst nanoparticle into the hole, removing the sacrificial layer. The disclosure is further related to growing a carbon nanotube from the catalyst nanoparticle. | 12-29-2011 |
20120097547 | Method for Copper Electrodeposition - The present invention is related to a method for electroplating a copper deposit onto a substrate, wherein the method comprises the steps of: a) immersing the substrate into an electroplating bath having a copper ion concentration comprised between 0.5 mmol·l | 04-26-2012 |