| Patent application number | Description | Published |
|---|
| 20080204686 | Mask Structure for Manufacturing an Integrated Circuit by Photolithographic Patterning - Photolithography using polarized light is disclosed. For example, a method includes transmitting the light through a mask having a first area with a first class of patterns and a second area with a second class of patterns thereby generating a virtual image. The virtual image is exposed into a resist layer. The polarization of the light passing the first area is modified while the light passing the mask. | 08-28-2008 |
| 20080318153 | PHOTOSENSITIVE LAYER STACK - A photosensitive layer stack and methods for multiple exposure lithography are disclosed having a bleachable layer with a first absorption switching from absorptive to transmissive upon irradiation and a photochromic layer having a second absorption switching from transmissive to absorptive upon irradiation. | 12-25-2008 |
| 20090170024 | Method of Patterning a Substrate, Photosensitive Layer Stack and System for Lithography - A photosensitive layer stack, lithographic systems and methods of patterning a substrate are disclosed having a patterning layer and a photochromic layer with an absorption switching from transmissive to absorptive upon exposure. | 07-02-2009 |
| 20090244502 | Methods of Compensating Lens Heating, Lithographic Projection System and Photo Mask - Embodiments relate to compensating for lens heating, lithographic projection system and photo mask. Accordingly, lens heating is compensated by providing a layout pattern including a regular pattern being arranged substantially symmetrical in a first region and a sub-resolution pattern including a plurality of sub-resolution structural elements, wherein the sub-resolution pattern in a second region, so as to minimize non-homogenous lens heating of a projection apparatus in case of a lithographic projection. | 10-01-2009 |
| 20100266939 | Lithographic Mask and Method of Forming a Lithographic Mask - A lithographic mask comprises a first layer including grooves, a second layer including regions, sections and a groove-like structure that encloses the sections. The first and second layers are formed so as to reduce electrical potential differences within the second layer. A method of forming a lithographic mask includes forming first and second layers to dispose the second layer over the first layer, patterning the second layer to comprise sections, a region, and a groove-like structure enclosing the sections, and forming grooves in the first layer at portions not covered by the second layer. The first and second layers are formed to reduce potential differences within the second layers during the step of forming the grooves in the first layer. | 10-21-2010 |
