Patent application number | Description | Published |
20130065342 | Method for Producing a Light-Emitting Diode - A method is provided for producing a light-emitting diode. A carrier substrate has a silicon surface. A series of layers is deposited on the silicon surface in a direction of growth and a light-emitting diode structure is deposited on the series of layers. The series of layers includes a GaN layer, which is formed with gallium nitride. The series of layers includes a masking layer, which is formed with silicon nitride. The masking layer follows at least part of the GaN layer in the direction of growth. | 03-14-2013 |
20130200432 | SEMICONDUCTOR COMPONENT, SUBSTRATE AND METHOD FOR PRODUCING A SEMICONDUCTOR LAYER SEQUENCE - A semiconductor component includes a semiconductor body based on a nitride compound semiconductor material, and a substrate on which the semiconductor body is arranged, wherein impurities are formed in the substrate in a targeted manner. | 08-08-2013 |
20130214285 | Semiconductor Component and Method for Producing a Semiconductor Component - A semiconductor component has a semiconductor layer sequence made of a nitridic composite semiconductor material on a substrate. The substrate includes a silicon surface facing the semiconductor layer sequence. The semiconductor layer sequence includes an active region and at least one intermediate layer made of an oxygen-doped AN composite semiconductor material between the substrate and the active region. | 08-22-2013 |
20130328101 | METHOD OF PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP, AND SUCH A SEMICONDUCTOR CHIP - A method of producing an optoelectronic semiconductor chip having a semiconductor layer stack based on a material system AlInGaP includes preparing a growth substrate having a silicon surface, arranging a compressively relaxed buffer layer stack on the growth substrate, and metamorphically, epitaxially growing the semiconductor layer stack on the buffer layer stack, the semiconductor layer stack having an active layer that generates radiation. | 12-12-2013 |
20140302665 | METHOD FOR PRODUCING AN OPTOELECTRONIC NITRIDE COMPOUND SEMICONDUCTOR COMPONENT - A method of producing a nitride compound semiconductor component includes providing a growth substrate having a silicon surface, growing a buffer layer containing an aluminium-containing nitride compound semiconductor onto the silicon surface, growing a stress layer structure that produces a compressive stress, and growing a functional semiconductor layer sequence onto the stress layer structure, wherein the stress layer structure includes a first GaN semiconductor layer and a second GaN semiconductor layer, a masking layer is embedded in the first GaN semiconductor layer, an Al(Ga)N-intermediate layer that produces a compressive stress is disposed between the first GaN semiconductor layer and the second GaN semiconductor layer, and the stress layer structure does not contain further Al(Ga)N-intermediate layers. | 10-09-2014 |
20140329350 | Method for Producing a Light-Emitting Diode - A method is provided for producing a light-emitting diode. In one embodiment, a series of layers is deposited on the silicon surface of a carrier in a direction of growth and a light-emitting diode structure is deposited on the series of layers. The series of layers includes a GaN layer, which is formed with gallium nitride. The series of layers includes a masking layer, which is formed with silicon nitride. The masking layer follows at least part of the GaN layer in the direction of growth. | 11-06-2014 |
20140342484 | METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP AND CORRESPONDING OPTOELECTRONIC SEMICONDUCTOR CHIP - A method of producing a semiconductor chip includes providing a silicon growth substrate, producing a III nitride buffer layer on the growth substrate by sputtering, and growing a III nitride semiconductor layer sequence having an active layer above the buffer layer. | 11-20-2014 |
20150228858 | OPTOELECTRONIC COMPONENT WITH A LAYER STRUCTURE - An optoelectronic component includes a layer structure which has a first gallium nitride layer and an aluminum-containing nitride intermediate layer. In this case, the aluminum-containing nitride intermediate layer adjoins the first gallium nitride layer. The layer structure has an undoped second gallium nitride layer which adjoins the aluminum-containing nitride intermediate layer. | 08-13-2015 |