Patent application number | Description | Published |
20110284986 | BYPASS DIODE FOR A SOLAR CELL - Bypass diodes for solar cells are described. In one embodiment, a bypass diode for a solar cell includes a substrate of the solar cell. A first conductive region is disposed above the substrate, the first conductive region of a first conductivity type. A second conductive region is disposed on the first conductive region, the second conductive region of a second conductivity type opposite the first conductivity type. | 11-24-2011 |
20120171799 | BYPASS DIODE FOR A SOLAR CELL - Methods of fabricating bypass diodes for solar cells are described. In one embodiment, a method includes forming a first conductive region of a first conductivity type above a substrate of a solar cell. A second conductive region of a second conductivity type is formed on the first conductive region. In another embodiment, a method includes forming a first conductive region of a first conductivity type above a substrate of a solar cell. A second conductive region of a second conductivity type is formed within, and surrounded by, an uppermost portion of the first conductive region but is not formed in a lowermost portion of the first conductive region. | 07-05-2012 |
20120266951 | METHOD OF FORMING EMITTERS FOR A BACK-CONTACT SOLAR CELL - Methods of forming emitters for back-contact solar cells are described. In one embodiment, a method includes forming a first solid-state dopant source above a substrate. The first solid-state dopant source includes a plurality of regions separated by gaps. Regions of a second solid-state dopant source are formed above the substrate by printing. | 10-25-2012 |
20130164878 | HYBRID POLYSILICON HETEROJUNCTION BACK CONTACT CELL - A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the back side of a silicon substrate. Subsequently, a high quality oxide layer and a wide band gap doped semiconductor layer can both be formed on the back and front sides of the silicon substrate. A metallization process to plate metal fingers onto the doped polysilicon layer through contact openings can then be performed. The plated metal fingers can form a first metal gridline. A second metal gridline can be formed by directly plating metal to an emitter region on the back side of the silicon substrate, eliminating the need for contact openings for the second metal gridline. Among the advantages, the method for manufacture provides decreased thermal processes, decreased etching steps, increased efficiency and a simplified procedure for the manufacture of high efficiency solar cells. | 06-27-2013 |
20130164879 | HYBRID POLYSILICON HETEROJUNCTION BACK CONTACT CELL - A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the back side of a silicon substrate. Subsequently, a high quality oxide layer and a wide band gap doped semiconductor layer can both be formed on the back and front sides of the silicon substrate. A metallization process to plate metal fingers onto the doped polysilicon layer through contact openings can then be performed. The plated metal fingers can form a first metal gridline. A second metal gridline can be formed by directly plating metal to an emitter region on the back side of the silicon substrate, eliminating the need for contact openings for the second metal gridline. Among the advantages, the method for manufacture provides decreased thermal processes, decreased etching steps, increased efficiency and a simplified procedure for the manufacture of high efficiency solar cells. | 06-27-2013 |
20130247965 | SOLAR CELL HAVING AN EMITTER REGION WITH WIDE BANDGAP SEMICONDUCTOR MATERIAL - Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate. | 09-26-2013 |
20140053888 | RADIALLY ARRANGED METAL CONTACT FINGERS FOR SOLAR CELLS - A solar cell includes negative metal contact fingers and positive metal contact fingers. The negative metal contact fingers are interdigitated with the positive metal contact fingers. The metal contact fingers, both positive and negative, have a radial design where they radially extend to surround at least 25% of a perimeter of a corresponding contact pad. The metal contact fingers have bend points, which collectively form a radial pattern with a center point within the contact pad. Exactly two metal contact pads merge into a single leading metal contact pad that is wider than either of the exactly two metal contact pads. | 02-27-2014 |
20140166093 | SOLAR CELL EMITTER REGION FABRICATION USING N-TYPE DOPED SILICON NANO-PARTICLES - Methods of fabricating solar cell emitter regions using N-type doped silicon nano-particles and the resulting solar cells are described. In an example, a method of fabricating an emitter region of a solar cell includes forming a plurality of regions of N-type doped silicon nano-particles on a first surface of a substrate of the solar cell. A P-type dopant-containing layer is formed on the plurality of regions of N-type doped silicon nano-particles and on the first surface of the substrate between the regions of N-type doped silicon nano-particles. At least a portion of the P-type dopant-containing layer is mixed with at least a portion of each of the plurality of regions of N-type doped silicon nano-particles. | 06-19-2014 |
20140166094 | SOLAR CELL EMITTER REGION FABRICATION USING ETCH RESISTANT FILM - Methods of fabricating solar cell emitter regions using etch resistant films and the resulting solar cells are described. In an example, a method of fabricating an emitter region of a solar cell includes forming a plurality of regions of N-type doped silicon nano-particles on a first surface of a substrate of the solar cell. A P-type dopant-containing layer is formed on the plurality of regions of N-type doped silicon nano-particles and on the first surface of the substrate between the regions of N-type doped silicon nano-particles. A capping layer is formed on the P-type dopant-containing layer. An etch resistant layer is formed on the capping layer. A second surface of the substrate, opposite the first surface, is etched to texturize the second surface of the substrate. The etch resistant layer protects the capping layer and the P-type dopant-containing layer during the etching. | 06-19-2014 |